JPS57148351A - Laser annealing apparatus for semiconductor element - Google Patents

Laser annealing apparatus for semiconductor element

Info

Publication number
JPS57148351A
JPS57148351A JP3314481A JP3314481A JPS57148351A JP S57148351 A JPS57148351 A JP S57148351A JP 3314481 A JP3314481 A JP 3314481A JP 3314481 A JP3314481 A JP 3314481A JP S57148351 A JPS57148351 A JP S57148351A
Authority
JP
Japan
Prior art keywords
mask
substrate
laser beam
stage
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3314481A
Other languages
Japanese (ja)
Inventor
Masayasu Abe
Masaharu Aoyama
Takashi Yasujima
Toshio Yonezawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3314481A priority Critical patent/JPS57148351A/en
Publication of JPS57148351A publication Critical patent/JPS57148351A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To provide laser annealing without the damage of a mask pattern by a method wherein an optical mask which has a mask effect on laser beams is made to face an Si substrate slightly away from the substrate and laser beam scanning is carried out after the pattern of the substrate and that of the mask are matched. CONSTITUTION:An optical mask holding mechanism 11 comprises a mask stage 11b fixed by columns 11a and 11a' above a base 10, and a means for attaching part of a laser beam mask 12 to an opening 11c provided in the center of the stage. Next by the use of a semiconductor wafer holding mechanism 13, a semiconductor wafer 14 is supported in a parallel with the mask 12 and slightly separated from the mask in the opening 11. At the same time, the mechanism 13 is moved up and down by a gap setting mechanism 15 to provide the predetermined space. Then the mechanism 13 is moved and turned by moving stages 16x and 16y in XY directions and a rotary stage 16theta to carry out the predetermined scanning using a laser beam scanning mechanism 17 provided above the mask 12.
JP3314481A 1981-03-10 1981-03-10 Laser annealing apparatus for semiconductor element Pending JPS57148351A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3314481A JPS57148351A (en) 1981-03-10 1981-03-10 Laser annealing apparatus for semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3314481A JPS57148351A (en) 1981-03-10 1981-03-10 Laser annealing apparatus for semiconductor element

Publications (1)

Publication Number Publication Date
JPS57148351A true JPS57148351A (en) 1982-09-13

Family

ID=12378387

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3314481A Pending JPS57148351A (en) 1981-03-10 1981-03-10 Laser annealing apparatus for semiconductor element

Country Status (1)

Country Link
JP (1) JPS57148351A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60216555A (en) * 1984-04-12 1985-10-30 Fuji Electric Corp Res & Dev Ltd Manufacture of semiconductor device
GB2354111A (en) * 1999-07-13 2001-03-14 Nec Corp Method for forming semiconductor films at desired portions on a substrate
KR100553256B1 (en) * 2000-09-01 2006-02-20 주식회사 실트론 Device for Heat Treatment of Semicondu ctor Wafer with Localized Focusing

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60216555A (en) * 1984-04-12 1985-10-30 Fuji Electric Corp Res & Dev Ltd Manufacture of semiconductor device
GB2354111A (en) * 1999-07-13 2001-03-14 Nec Corp Method for forming semiconductor films at desired portions on a substrate
US6989300B1 (en) 1999-07-13 2006-01-24 Nec Corporation Method for forming semiconductor films at desired positions on a substrate
KR100553256B1 (en) * 2000-09-01 2006-02-20 주식회사 실트론 Device for Heat Treatment of Semicondu ctor Wafer with Localized Focusing

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