JPS5482981A - Nanufacture of semiconductor device - Google Patents

Nanufacture of semiconductor device

Info

Publication number
JPS5482981A
JPS5482981A JP15081777A JP15081777A JPS5482981A JP S5482981 A JPS5482981 A JP S5482981A JP 15081777 A JP15081777 A JP 15081777A JP 15081777 A JP15081777 A JP 15081777A JP S5482981 A JPS5482981 A JP S5482981A
Authority
JP
Japan
Prior art keywords
film
region
type
heat treatment
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15081777A
Other languages
Japanese (ja)
Other versions
JPS6115589B2 (en
Inventor
Masahiko Nakamae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15081777A priority Critical patent/JPS5482981A/en
Publication of JPS5482981A publication Critical patent/JPS5482981A/en
Publication of JPS6115589B2 publication Critical patent/JPS6115589B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE: To secure the self-alignment to increase the degree of integration by coating the film containing the impurity on the semiconductor substrate and providing the electrode after diffusing the impurity in the film through the heat treatment.
CONSTITUTION: N-type buried region 102a is provided within p-type Si substrate 101, and N-layer 103 is epitaxial-grown on the entire surface to oxidizing selectively via Si3N4 film 105a and 105b used as the mask. And SiO2 film 104 thus caused is used to isolate layer 103 into an island form. Then photo resist film 106 containing an opening is provided on the collector forming region; film 105b is etched away; and P-type collector region 102b is formed through diffusion. After this, film 105a is removed, and B2O3 film 107 and Si3N4 film 108 are coated on the entire film. Then P-type region 109 is formed through the heat treatment and then covered with resist film 110 at the prescribed area. Film 107 is then removed selectively to form P+-type region 111 and P-type region 112 simultaneously through the heat treatment, and P2O5 film 113 is provided to form N+-type emitter region 114 within region 112 through the heat treatment. After this, electrode 116, 114 and 115 are attached to region 111, 114 and 102b respectively.
COPYRIGHT: (C)1979,JPO&Japio
JP15081777A 1977-12-14 1977-12-14 Nanufacture of semiconductor device Granted JPS5482981A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15081777A JPS5482981A (en) 1977-12-14 1977-12-14 Nanufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15081777A JPS5482981A (en) 1977-12-14 1977-12-14 Nanufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5482981A true JPS5482981A (en) 1979-07-02
JPS6115589B2 JPS6115589B2 (en) 1986-04-24

Family

ID=15505054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15081777A Granted JPS5482981A (en) 1977-12-14 1977-12-14 Nanufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5482981A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61224448A (en) * 1985-03-29 1986-10-06 Toshiba Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61224448A (en) * 1985-03-29 1986-10-06 Toshiba Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6115589B2 (en) 1986-04-24

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