JPS5536940A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5536940A
JPS5536940A JP10879878A JP10879878A JPS5536940A JP S5536940 A JPS5536940 A JP S5536940A JP 10879878 A JP10879878 A JP 10879878A JP 10879878 A JP10879878 A JP 10879878A JP S5536940 A JPS5536940 A JP S5536940A
Authority
JP
Japan
Prior art keywords
area
depletion layer
layer
junction
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10879878A
Other languages
Japanese (ja)
Inventor
Tomonobu Yoshitake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10879878A priority Critical patent/JPS5536940A/en
Publication of JPS5536940A publication Critical patent/JPS5536940A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To improve pressure resistance of PN junction by expanding a depletion layer near the surface of both N-type semiconductor area and P-type semiconductor area. CONSTITUTION:A phosphor glass layer 7 is formed on an Si oxide 1, and P<-> area 8 is formed near PN junction 4 on the surface of P-type semiconductor area 3. The result is such that the area 2 has its depletion layer expanded by the phosphor glass layer 7 for the influence of ion in the Si oxide 1. As for the area 3, a depletion layer is also expanded since the surface density near PN junction 4 is lowered much enough to negate a storage layer, and the depletion layer 6'' in this case is considerably wider than normal depletion layer 5. A stability on the surface is thereby improved, and a deterioration for pressure resistance can be prevented consequently.
JP10879878A 1978-09-04 1978-09-04 Semiconductor device Pending JPS5536940A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10879878A JPS5536940A (en) 1978-09-04 1978-09-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10879878A JPS5536940A (en) 1978-09-04 1978-09-04 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5536940A true JPS5536940A (en) 1980-03-14

Family

ID=14493741

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10879878A Pending JPS5536940A (en) 1978-09-04 1978-09-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5536940A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6091240A (en) * 1983-10-26 1985-05-22 Hitachi Ltd Beam selector

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS507424A (en) * 1973-05-18 1975-01-25
JPS5017583A (en) * 1973-06-14 1975-02-24
JPS50105275A (en) * 1974-01-23 1975-08-19
JPS5311584A (en) * 1976-07-19 1978-02-02 Mitsubishi Electric Corp Semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS507424A (en) * 1973-05-18 1975-01-25
JPS5017583A (en) * 1973-06-14 1975-02-24
JPS50105275A (en) * 1974-01-23 1975-08-19
JPS5311584A (en) * 1976-07-19 1978-02-02 Mitsubishi Electric Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6091240A (en) * 1983-10-26 1985-05-22 Hitachi Ltd Beam selector
JPH0560051B2 (en) * 1983-10-26 1993-09-01 Hitachi Ltd

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