JPS55105362A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS55105362A JPS55105362A JP1186179A JP1186179A JPS55105362A JP S55105362 A JPS55105362 A JP S55105362A JP 1186179 A JP1186179 A JP 1186179A JP 1186179 A JP1186179 A JP 1186179A JP S55105362 A JPS55105362 A JP S55105362A
- Authority
- JP
- Japan
- Prior art keywords
- capacitance
- mos
- substrate
- ram2
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 8
- 102100031584 Cell division cycle-associated 7-like protein Human genes 0.000 abstract 5
- 101000777638 Homo sapiens Cell division cycle-associated 7-like protein Proteins 0.000 abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
- H01L27/0222—Charge pumping, substrate bias generation structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To control a change of the substrate potential by providing a capacitance between the substrate terminal and the grounding terminal. CONSTITUTION:The MOS dynamic RAM2 and the MOS capacitance-group 3 for preventing a change of the substrate potential are formed on the silicon substrate. The RAM2 is composed of MOS FETs and MOS capacitances. In the MOS capacitance-group 3, three MOS capacitances 4 the thickness of each insulating film of which is approximately equal to that of the gate film of the RAM2 are arranged in parallel and the total capacitance is greater than any capacitance of each MOS FET or MOS capacitance of the RAM2. The grounding potential Vss is applied to the capacitance 4, the potential VBB on the order of -2 volts is given to the substrate by the substrate potential self-generator. Also the potential VDD of about 5 volts is applied to the drain of the FET of RAM2. In this way, even through the substrate current IBB is changed by a selective on-off operation of the FET, a change of the substrate potential VBB can sufficiently be absorbed since the total capacitance of the capacitance-group 3 is greater.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1186179A JPS55105362A (en) | 1979-02-06 | 1979-02-06 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1186179A JPS55105362A (en) | 1979-02-06 | 1979-02-06 | Semiconductor integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55105362A true JPS55105362A (en) | 1980-08-12 |
Family
ID=11789501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1186179A Pending JPS55105362A (en) | 1979-02-06 | 1979-02-06 | Semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55105362A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6281748A (en) * | 1985-10-04 | 1987-04-15 | Nec Corp | Complementary type semiconductor integrated circuit device |
| JPH02276088A (en) * | 1989-01-18 | 1990-11-09 | Mitsubishi Electric Corp | Sense amplifier driving device and electrostatic capacity element for semiconductor storage device |
| JPH02146850U (en) * | 1989-05-12 | 1990-12-13 |
-
1979
- 1979-02-06 JP JP1186179A patent/JPS55105362A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6281748A (en) * | 1985-10-04 | 1987-04-15 | Nec Corp | Complementary type semiconductor integrated circuit device |
| JPH02276088A (en) * | 1989-01-18 | 1990-11-09 | Mitsubishi Electric Corp | Sense amplifier driving device and electrostatic capacity element for semiconductor storage device |
| JPH02146850U (en) * | 1989-05-12 | 1990-12-13 |
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