JPH029451U - - Google Patents

Info

Publication number
JPH029451U
JPH029451U JP8751588U JP8751588U JPH029451U JP H029451 U JPH029451 U JP H029451U JP 8751588 U JP8751588 U JP 8751588U JP 8751588 U JP8751588 U JP 8751588U JP H029451 U JPH029451 U JP H029451U
Authority
JP
Japan
Prior art keywords
terminal
semiconductor device
power supply
supply voltage
high resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8751588U
Other languages
Japanese (ja)
Other versions
JPH0749805Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1988087515U priority Critical patent/JPH0749805Y2/en
Publication of JPH029451U publication Critical patent/JPH029451U/ja
Application granted granted Critical
Publication of JPH0749805Y2 publication Critical patent/JPH0749805Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本考案に係る半導体装置の一実施例を
示す回路図である。第２図は半導体装置の従来例
を示す回路図である。 １２……ＭＯＳ入力回路、１３……半導体ペレ
ツト、１８，１８′……高抵抗、ＶＩＮ……入力
端子、ＶＣＣ……電源電圧端子、ＧＮＤ……接地
端子。 FIG. 1 is a circuit diagram showing an embodiment of a semiconductor device according to the present invention. FIG. 2 is a circuit diagram showing a conventional example of a semiconductor device. 12...MOS input circuit, 13...semiconductor pellet, 18, 18'...high resistance, VIN...input terminal, VCC...power supply voltage terminal, GND...ground terminal.

Claims (1)

【実用新案登録請求の範囲】 ＭＯＳ入力回路を有する半導体装置において、 入力端子と、接地端子或いは電源電圧端子との
間に、高抵抗を挿入した半導体ペレツトを用いる
ことを特徴とする半導体装置。[Claims for Utility Model Registration] A semiconductor device having a MOS input circuit, characterized in that a semiconductor pellet is used in which a high resistance is inserted between an input terminal and a ground terminal or a power supply voltage terminal.
JP1988087515U 1988-06-30 1988-06-30 Semiconductor device Expired - Lifetime JPH0749805Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988087515U JPH0749805Y2 (en) 1988-06-30 1988-06-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988087515U JPH0749805Y2 (en) 1988-06-30 1988-06-30 Semiconductor device

Publications (2)

Publication Number Publication Date
JPH029451U true JPH029451U (en) 1990-01-22
JPH0749805Y2 JPH0749805Y2 (en) 1995-11-13

Family

ID=31312120

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988087515U Expired - Lifetime JPH0749805Y2 (en) 1988-06-30 1988-06-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0749805Y2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001274402A (en) * 2000-03-24 2001-10-05 Toshiba Corp Power semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54149479A (en) * 1978-05-16 1979-11-22 Nec Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54149479A (en) * 1978-05-16 1979-11-22 Nec Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001274402A (en) * 2000-03-24 2001-10-05 Toshiba Corp Power semiconductor device

Also Published As

Publication number Publication date
JPH0749805Y2 (en) 1995-11-13

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