JPS57167655A - Manufacture of insulating isolation substrate - Google Patents

Manufacture of insulating isolation substrate

Info

Publication number
JPS57167655A
JPS57167655A JP5334281A JP5334281A JPS57167655A JP S57167655 A JPS57167655 A JP S57167655A JP 5334281 A JP5334281 A JP 5334281A JP 5334281 A JP5334281 A JP 5334281A JP S57167655 A JPS57167655 A JP S57167655A
Authority
JP
Japan
Prior art keywords
substrate
oxide film
silicon
shaped grooves
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5334281A
Other languages
Japanese (ja)
Other versions
JPS6155252B2 (en
Inventor
Takanobu Satou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JIDO KEISOKU GIJUTSU KENKIYUUKUMIAI
JIDOU KEISOKU GIJUTSU KENKIYUU
JIDOU KEISOKU GIJUTSU KENKIYUUKUMIAI
Original Assignee
JIDO KEISOKU GIJUTSU KENKIYUUKUMIAI
JIDOU KEISOKU GIJUTSU KENKIYUU
JIDOU KEISOKU GIJUTSU KENKIYUUKUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JIDO KEISOKU GIJUTSU KENKIYUUKUMIAI, JIDOU KEISOKU GIJUTSU KENKIYUU, JIDOU KEISOKU GIJUTSU KENKIYUUKUMIAI filed Critical JIDO KEISOKU GIJUTSU KENKIYUUKUMIAI
Priority to JP5334281A priority Critical patent/JPS57167655A/en
Publication of JPS57167655A publication Critical patent/JPS57167655A/en
Publication of JPS6155252B2 publication Critical patent/JPS6155252B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit

Abstract

PURPOSE:To minimize the warp of the dielectric isolation substrate by forming V-shaped grooves to both the surface and the back of the substrate, shaping an oxide film to the surface and a film made of a substance having a high thermal expansion coefficient to the back and forming single crystal Si islands to both the surface and the back. CONSTITUTION:Oxide films 21a, 21b are formed to the surface and back of the single crystal silicon substrate 20, the surface thereof is ground, and the V- shaped grooves 22 are molded so as to be distributed on the surface and the back at the same rate. The section, where the silicon substrate 20 is exposed, of the V-shaped grooves 22 of the surface is oxidized, and the surface of the substrate is coated with the oxide film 21. The film 24 made of the substance having the thermal expansion coefficient larger than the oxide film 21 is shaped to the back. silicon is grown onto the surface of the substrate 20, and polycrystal silicon 23a is deposited onto the surface. Polycrystal silicon 23b is deposited onto the back in shape that is thinner than the surface at the same time. The back is ground, and the oxide film 21 is exposed.
JP5334281A 1981-04-08 1981-04-08 Manufacture of insulating isolation substrate Granted JPS57167655A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5334281A JPS57167655A (en) 1981-04-08 1981-04-08 Manufacture of insulating isolation substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5334281A JPS57167655A (en) 1981-04-08 1981-04-08 Manufacture of insulating isolation substrate

Publications (2)

Publication Number Publication Date
JPS57167655A true JPS57167655A (en) 1982-10-15
JPS6155252B2 JPS6155252B2 (en) 1986-11-27

Family

ID=12940087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5334281A Granted JPS57167655A (en) 1981-04-08 1981-04-08 Manufacture of insulating isolation substrate

Country Status (1)

Country Link
JP (1) JPS57167655A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991017471A1 (en) * 1990-04-27 1991-11-14 Japan As Represented By Director General Of Agency Of Industrial Science And Technology Optical valve device
US5233211A (en) * 1990-10-16 1993-08-03 Agency Of Industrial Science And Technology Semiconductor device for driving a light valve
US5347154A (en) * 1990-11-15 1994-09-13 Seiko Instruments Inc. Light valve device using semiconductive composite substrate
US5434433A (en) * 1992-08-19 1995-07-18 Seiko Instruments Inc. Semiconductor device for a light wave
US5574292A (en) * 1992-05-13 1996-11-12 Seiko Instruments Inc. Semiconductor device with monosilicon layer
US5618739A (en) * 1990-11-15 1997-04-08 Seiko Instruments Inc. Method of making light valve device using semiconductive composite substrate
US5633176A (en) * 1992-08-19 1997-05-27 Seiko Instruments Inc. Method of producing a semiconductor device for a light valve
US5637187A (en) * 1990-09-05 1997-06-10 Seiko Instruments Inc. Light valve device making
US6191476B1 (en) 1992-10-21 2001-02-20 Seiko Instruments Inc. Semiconductor device
CN106098629A (en) * 2016-07-21 2016-11-09 深圳市华星光电技术有限公司 TFT substrate and preparation method thereof

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5982461A (en) * 1990-04-27 1999-11-09 Hayashi; Yutaka Light valve device
WO1991017471A1 (en) * 1990-04-27 1991-11-14 Japan As Represented By Director General Of Agency Of Industrial Science And Technology Optical valve device
US5637187A (en) * 1990-09-05 1997-06-10 Seiko Instruments Inc. Light valve device making
US6067062A (en) * 1990-09-05 2000-05-23 Seiko Instruments Inc. Light valve device
US5233211A (en) * 1990-10-16 1993-08-03 Agency Of Industrial Science And Technology Semiconductor device for driving a light valve
USRE36836E (en) * 1990-10-16 2000-08-29 Agency Of Industrial Science And Technology Semiconductor device for driving a light valve
US5926699A (en) * 1990-10-16 1999-07-20 Agency Of Industrial Science And Technology Method of fabricating semiconductor device having stacked layer substrate
US5759878A (en) * 1990-10-16 1998-06-02 Agency Of Industrial Science And Technology Method of fabricating semiconductor device having epitaxially grown semiconductor single crystal film
US5572045A (en) * 1990-11-15 1996-11-05 Seiko Instruments Inc. Light valve device using semiconductive composite substrate
US5728591A (en) * 1990-11-15 1998-03-17 Seiko Instruments Inc. Process for manufacturing light valve device using semiconductive composite substrate
US5618739A (en) * 1990-11-15 1997-04-08 Seiko Instruments Inc. Method of making light valve device using semiconductive composite substrate
US5486708A (en) * 1990-11-15 1996-01-23 Seiko Instruments Inc. Light valve device using semiconductive composite substrate
US5347154A (en) * 1990-11-15 1994-09-13 Seiko Instruments Inc. Light valve device using semiconductive composite substrate
US5574292A (en) * 1992-05-13 1996-11-12 Seiko Instruments Inc. Semiconductor device with monosilicon layer
US5633176A (en) * 1992-08-19 1997-05-27 Seiko Instruments Inc. Method of producing a semiconductor device for a light valve
US5434433A (en) * 1992-08-19 1995-07-18 Seiko Instruments Inc. Semiconductor device for a light wave
US6187605B1 (en) 1992-08-19 2001-02-13 Seiko Instruments Inc. Method of forming a semiconductor device for a light valve
US6191476B1 (en) 1992-10-21 2001-02-20 Seiko Instruments Inc. Semiconductor device
CN106098629A (en) * 2016-07-21 2016-11-09 深圳市华星光电技术有限公司 TFT substrate and preparation method thereof
CN106098629B (en) * 2016-07-21 2019-02-19 深圳市华星光电技术有限公司 TFT substrate and preparation method thereof

Also Published As

Publication number Publication date
JPS6155252B2 (en) 1986-11-27

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