JPS5377465A - Boron deposition method - Google Patents
Boron deposition methodInfo
- Publication number
- JPS5377465A JPS5377465A JP15580176A JP15580176A JPS5377465A JP S5377465 A JPS5377465 A JP S5377465A JP 15580176 A JP15580176 A JP 15580176A JP 15580176 A JP15580176 A JP 15580176A JP S5377465 A JPS5377465 A JP S5377465A
- Authority
- JP
- Japan
- Prior art keywords
- deposition method
- boron
- boron deposition
- core tube
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Led Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15580176A JPS5377465A (en) | 1976-12-20 | 1976-12-20 | Boron deposition method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15580176A JPS5377465A (en) | 1976-12-20 | 1976-12-20 | Boron deposition method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5377465A true JPS5377465A (en) | 1978-07-08 |
JPS5538046B2 JPS5538046B2 (ja) | 1980-10-02 |
Family
ID=15613733
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15580176A Granted JPS5377465A (en) | 1976-12-20 | 1976-12-20 | Boron deposition method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5377465A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56169322A (en) * | 1980-05-30 | 1981-12-26 | Fujikura Ltd | Selective diffusion of boron into silicon |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4847769A (ja) * | 1971-10-18 | 1973-07-06 |
-
1976
- 1976-12-20 JP JP15580176A patent/JPS5377465A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4847769A (ja) * | 1971-10-18 | 1973-07-06 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56169322A (en) * | 1980-05-30 | 1981-12-26 | Fujikura Ltd | Selective diffusion of boron into silicon |
Also Published As
Publication number | Publication date |
---|---|
JPS5538046B2 (ja) | 1980-10-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5377465A (en) | Boron deposition method | |
JPS5363993A (en) | Production of semiconductor device | |
JPS5422168A (en) | Glass coating method for semiconductor element | |
JPS5423379A (en) | Formation of insulating film on semiconductor surface | |
JPS52139376A (en) | Production of semiconductor device | |
JPS52110570A (en) | Forming method of silicon epitaxial layer | |
JPS5257531A (en) | Sheathed heater and its manufacturing method | |
JPS5265664A (en) | Selective introduction of impurity in compound semiconductor substrate | |
JPS52139372A (en) | Selective etching method of thin films | |
JPS5245270A (en) | Semiconductor device | |
JPS51140559A (en) | Impurities diffusing to iii-v group compound semi-conductor base plate | |
JPS5376747A (en) | Forming method of insulation film | |
JPS5258473A (en) | Production of semiconductor device | |
JPS5351964A (en) | Selective growth method for semiconductor crystal | |
JPS5428566A (en) | Manufacture of semiconductor device | |
JPS5349943A (en) | Impurity diffusion method | |
JPS52154344A (en) | Impurity diffusion method | |
JPS5354972A (en) | Production of semiconductor device | |
JPS51146175A (en) | Diode epitaxial growth method | |
JPS5423378A (en) | Formation method of insulating film on semiconductor surface | |
JPS522165A (en) | Method of thermally diffusing selectively aluminum of semiconductor su bstrate | |
JPS5289467A (en) | Semiconductor device | |
JPS5384554A (en) | Manufacture for semiconductor device | |
JPS5350241A (en) | Electrodeposit coating | |
JPS5373990A (en) | Semiconductor device |