JPS5380183A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5380183A JPS5380183A JP15676276A JP15676276A JPS5380183A JP S5380183 A JPS5380183 A JP S5380183A JP 15676276 A JP15676276 A JP 15676276A JP 15676276 A JP15676276 A JP 15676276A JP S5380183 A JPS5380183 A JP S5380183A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor device
- electrode wiring
- layer electrode
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To avoid the suction of Si due to the Al layer, the second layer electrode wiring, and thus to enhance the emitter-base dielectric strength,, by making a high fusing point metal layer, the first layer electrode wiring, contain Si.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15676276A JPS5380183A (en) | 1976-12-25 | 1976-12-25 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15676276A JPS5380183A (en) | 1976-12-25 | 1976-12-25 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5380183A true JPS5380183A (en) | 1978-07-15 |
Family
ID=15634755
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15676276A Pending JPS5380183A (en) | 1976-12-25 | 1976-12-25 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5380183A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58101469A (en) * | 1981-12-11 | 1983-06-16 | Seiko Epson Corp | Thin film solar battery |
JPS5961147A (en) * | 1982-09-30 | 1984-04-07 | Toshiba Corp | Manufacture of semiconductor device |
JPS6039866A (en) * | 1983-07-20 | 1985-03-01 | シーメンス、アクチエンゲゼルシヤフト | Integrated semiconductor circuit |
JPS60152171A (en) * | 1984-01-19 | 1985-08-10 | Kyocera Corp | Reader |
-
1976
- 1976-12-25 JP JP15676276A patent/JPS5380183A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58101469A (en) * | 1981-12-11 | 1983-06-16 | Seiko Epson Corp | Thin film solar battery |
JPS5961147A (en) * | 1982-09-30 | 1984-04-07 | Toshiba Corp | Manufacture of semiconductor device |
JPH0578181B2 (en) * | 1982-09-30 | 1993-10-28 | Tokyo Shibaura Electric Co | |
JPS6039866A (en) * | 1983-07-20 | 1985-03-01 | シーメンス、アクチエンゲゼルシヤフト | Integrated semiconductor circuit |
JPS60152171A (en) * | 1984-01-19 | 1985-08-10 | Kyocera Corp | Reader |
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