JPS5380183A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5380183A
JPS5380183A JP15676276A JP15676276A JPS5380183A JP S5380183 A JPS5380183 A JP S5380183A JP 15676276 A JP15676276 A JP 15676276A JP 15676276 A JP15676276 A JP 15676276A JP S5380183 A JPS5380183 A JP S5380183A
Authority
JP
Japan
Prior art keywords
layer
semiconductor device
electrode wiring
layer electrode
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15676276A
Other languages
Japanese (ja)
Inventor
Toshihiko Ono
Kazuo Tanaka
Kenichi Imai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15676276A priority Critical patent/JPS5380183A/en
Publication of JPS5380183A publication Critical patent/JPS5380183A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To avoid the suction of Si due to the Al layer, the second layer electrode wiring, and thus to enhance the emitter-base dielectric strength,, by making a high fusing point metal layer, the first layer electrode wiring, contain Si.
COPYRIGHT: (C)1978,JPO&Japio
JP15676276A 1976-12-25 1976-12-25 Semiconductor device Pending JPS5380183A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15676276A JPS5380183A (en) 1976-12-25 1976-12-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15676276A JPS5380183A (en) 1976-12-25 1976-12-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5380183A true JPS5380183A (en) 1978-07-15

Family

ID=15634755

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15676276A Pending JPS5380183A (en) 1976-12-25 1976-12-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5380183A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58101469A (en) * 1981-12-11 1983-06-16 Seiko Epson Corp Thin film solar battery
JPS5961147A (en) * 1982-09-30 1984-04-07 Toshiba Corp Manufacture of semiconductor device
JPS6039866A (en) * 1983-07-20 1985-03-01 シーメンス、アクチエンゲゼルシヤフト Integrated semiconductor circuit
JPS60152171A (en) * 1984-01-19 1985-08-10 Kyocera Corp Reader

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58101469A (en) * 1981-12-11 1983-06-16 Seiko Epson Corp Thin film solar battery
JPS5961147A (en) * 1982-09-30 1984-04-07 Toshiba Corp Manufacture of semiconductor device
JPH0578181B2 (en) * 1982-09-30 1993-10-28 Tokyo Shibaura Electric Co
JPS6039866A (en) * 1983-07-20 1985-03-01 シーメンス、アクチエンゲゼルシヤフト Integrated semiconductor circuit
JPS60152171A (en) * 1984-01-19 1985-08-10 Kyocera Corp Reader

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