JPS5368985A - Junction type field effect transistor - Google Patents
Junction type field effect transistorInfo
- Publication number
- JPS5368985A JPS5368985A JP14401376A JP14401376A JPS5368985A JP S5368985 A JPS5368985 A JP S5368985A JP 14401376 A JP14401376 A JP 14401376A JP 14401376 A JP14401376 A JP 14401376A JP S5368985 A JPS5368985 A JP S5368985A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- type field
- junction type
- gate regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
- H01L29/8083—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14401376A JPS5368985A (en) | 1976-12-02 | 1976-12-02 | Junction type field effect transistor |
US05/856,540 US4169269A (en) | 1976-12-02 | 1977-12-01 | Junction field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14401376A JPS5368985A (en) | 1976-12-02 | 1976-12-02 | Junction type field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5368985A true JPS5368985A (en) | 1978-06-19 |
JPS5749151B2 JPS5749151B2 (ja) | 1982-10-20 |
Family
ID=15352281
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14401376A Granted JPS5368985A (en) | 1976-12-02 | 1976-12-02 | Junction type field effect transistor |
Country Status (2)
Country | Link |
---|---|
US (1) | US4169269A (ja) |
JP (1) | JPS5368985A (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5470782A (en) * | 1977-11-16 | 1979-06-06 | Seiko Instr & Electronics Ltd | Electronic circuit for watch |
JPS5946103B2 (ja) * | 1980-03-10 | 1984-11-10 | 日本電信電話株式会社 | トランジスタ |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5084179A (ja) * | 1973-11-27 | 1975-07-07 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4041517A (en) * | 1974-09-04 | 1977-08-09 | Tokyo Shibaura Electric Co., Ltd. | Vertical type junction field effect semiconductor device |
-
1976
- 1976-12-02 JP JP14401376A patent/JPS5368985A/ja active Granted
-
1977
- 1977-12-01 US US05/856,540 patent/US4169269A/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5084179A (ja) * | 1973-11-27 | 1975-07-07 |
Also Published As
Publication number | Publication date |
---|---|
US4169269A (en) | 1979-09-25 |
JPS5749151B2 (ja) | 1982-10-20 |
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