JPS5322379A - Junction type field eff ect transistor - Google Patents

Junction type field eff ect transistor

Info

Publication number
JPS5322379A
JPS5322379A JP7480277A JP7480277A JPS5322379A JP S5322379 A JPS5322379 A JP S5322379A JP 7480277 A JP7480277 A JP 7480277A JP 7480277 A JP7480277 A JP 7480277A JP S5322379 A JPS5322379 A JP S5322379A
Authority
JP
Japan
Prior art keywords
type field
junction type
conductivity type
eff ect
ect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7480277A
Other languages
Japanese (ja)
Other versions
JPS5628382B2 (en
Inventor
Isamu Kudome
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7480277A priority Critical patent/JPS5322379A/en
Publication of JPS5322379A publication Critical patent/JPS5322379A/en
Publication of JPS5628382B2 publication Critical patent/JPS5628382B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To prevent the effect of the traps existing at the boundary face between an active layer and a substrate by forming a buffer layer of an opposite conductivity type and a high resistivity on a semiconductor layer of one conductivity type provided to a semi-insulating semiconductor substrate and providing the active layer of the same conductivity type as the buffer layer, then disposing gate, drain, source electrodes.
COPYRIGHT: (C)1978,JPO&Japio
JP7480277A 1977-06-23 1977-06-23 Junction type field eff ect transistor Granted JPS5322379A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7480277A JPS5322379A (en) 1977-06-23 1977-06-23 Junction type field eff ect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7480277A JPS5322379A (en) 1977-06-23 1977-06-23 Junction type field eff ect transistor

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP1322975A Division JPS565072B2 (en) 1975-01-31 1975-01-31

Publications (2)

Publication Number Publication Date
JPS5322379A true JPS5322379A (en) 1978-03-01
JPS5628382B2 JPS5628382B2 (en) 1981-07-01

Family

ID=13557793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7480277A Granted JPS5322379A (en) 1977-06-23 1977-06-23 Junction type field eff ect transistor

Country Status (1)

Country Link
JP (1) JPS5322379A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6037783A (en) * 1983-08-10 1985-02-27 Matsushita Electric Ind Co Ltd Field effect transistor
JPH01105605U (en) * 1988-01-05 1989-07-17

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58157191U (en) * 1982-04-13 1983-10-20 大平技研工業株式会社 game machine
JPS58171193U (en) * 1982-05-10 1983-11-15 大平技研工業株式会社 TV receiver with video games
JPS6075075A (en) * 1984-09-06 1985-04-27 株式会社　ソフイア Image type pinball machine

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6037783A (en) * 1983-08-10 1985-02-27 Matsushita Electric Ind Co Ltd Field effect transistor
JPH01105605U (en) * 1988-01-05 1989-07-17

Also Published As

Publication number Publication date
JPS5628382B2 (en) 1981-07-01

Similar Documents

Publication Publication Date Title
JPS535581A (en) Schottky gate type field effect transistor
JPS5422781A (en) Insulator gate protective semiconductor device
JPS5425171A (en) Manufacture of field effect semiconductor device
JPS542679A (en) Nonvoltile semiconductor memory device
JPS538572A (en) Field effect type transistor
JPS5322379A (en) Junction type field eff ect transistor
JPS52135685A (en) Semiconductor device
JPS546777A (en) Field effect type transistor
JPS52124889A (en) Semiconductor photoelectric transducer
JPS5382277A (en) Schottky gate field effect transistor
JPS5381087A (en) Gallium aresenide field effect transistor
JPS5346288A (en) Mis type semiconductor device
JPS5415681A (en) Manufacture of field effect transistor
JPS52100877A (en) Field effect transistor of junction type
JPS5426668A (en) Field effect transistor of junction gate type
JPS5423478A (en) Semiconductor device of field effect type
JPS5412566A (en) Production of semiconductor device
JPS5439585A (en) Semiconductor memory device
JPS5372578A (en) Mis-type field effect transistor
JPS53137677A (en) Junction type field effect transistor and its manufacture
JPS5368985A (en) Junction type field effect transistor
JPS5384690A (en) Field effect transistor
JPS52146186A (en) Semiconductor device
JPS5363987A (en) Junction type field effect transistor
JPS5423383A (en) Field effect transistor