JPS5422785A - Mis-type semiconductor memory device and its manufacture - Google Patents
Mis-type semiconductor memory device and its manufactureInfo
- Publication number
- JPS5422785A JPS5422785A JP8738677A JP8738677A JPS5422785A JP S5422785 A JPS5422785 A JP S5422785A JP 8738677 A JP8738677 A JP 8738677A JP 8738677 A JP8738677 A JP 8738677A JP S5422785 A JPS5422785 A JP S5422785A
- Authority
- JP
- Japan
- Prior art keywords
- mis
- manufacture
- memory device
- type semiconductor
- semiconductor memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To reduce the effective channel length and thus to reduce the occupied area by forming a uniconduction-type and high impurity density channel length limiting region within the substrate at the source and drain region forming region and then forming the source and drain regions on the forming region.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8738677A JPS5422785A (en) | 1977-07-22 | 1977-07-22 | Mis-type semiconductor memory device and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8738677A JPS5422785A (en) | 1977-07-22 | 1977-07-22 | Mis-type semiconductor memory device and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5422785A true JPS5422785A (en) | 1979-02-20 |
Family
ID=13913444
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8738677A Pending JPS5422785A (en) | 1977-07-22 | 1977-07-22 | Mis-type semiconductor memory device and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5422785A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2926416A1 (en) * | 1979-06-29 | 1981-01-22 | Siemens Ag | DYNAMIC SEMICONDUCTOR STORAGE CELL AND METHOD FOR THEIR PRODUCTION |
DE2926417A1 (en) * | 1979-06-29 | 1981-01-22 | Siemens Ag | DYNAMIC SEMICONDUCTOR STORAGE CELL AND METHOD FOR THEIR PRODUCTION |
JPS5886762A (en) * | 1981-11-18 | 1983-05-24 | Nec Corp | Semiconductor memory integrated circuit device |
US4891747A (en) * | 1984-06-25 | 1990-01-02 | Texas Instruments Incorporated | Lightly-doped drain transistor structure in contactless DRAM cell with buried source/drain |
-
1977
- 1977-07-22 JP JP8738677A patent/JPS5422785A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2926416A1 (en) * | 1979-06-29 | 1981-01-22 | Siemens Ag | DYNAMIC SEMICONDUCTOR STORAGE CELL AND METHOD FOR THEIR PRODUCTION |
DE2926417A1 (en) * | 1979-06-29 | 1981-01-22 | Siemens Ag | DYNAMIC SEMICONDUCTOR STORAGE CELL AND METHOD FOR THEIR PRODUCTION |
US4613883A (en) * | 1979-06-29 | 1986-09-23 | Siemens Aktiengesellschaft | Dynamic semiconductor memory cell and method for its manufacture |
JPS5886762A (en) * | 1981-11-18 | 1983-05-24 | Nec Corp | Semiconductor memory integrated circuit device |
US4891747A (en) * | 1984-06-25 | 1990-01-02 | Texas Instruments Incorporated | Lightly-doped drain transistor structure in contactless DRAM cell with buried source/drain |
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