JPS5363987A - Junction type field effect transistor - Google Patents

Junction type field effect transistor

Info

Publication number
JPS5363987A
JPS5363987A JP14001376A JP14001376A JPS5363987A JP S5363987 A JPS5363987 A JP S5363987A JP 14001376 A JP14001376 A JP 14001376A JP 14001376 A JP14001376 A JP 14001376A JP S5363987 A JPS5363987 A JP S5363987A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
type field
junction type
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14001376A
Other languages
Japanese (ja)
Inventor
Yukio Takizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP14001376A priority Critical patent/JPS5363987A/en
Publication of JPS5363987A publication Critical patent/JPS5363987A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To make possible the use of a substrate having an impurity concentration of the extent at which channels may be directly formed and make unncessary the use of a substrate having an epitaxial layer by setting patterns in a second gate region and decreasing the resistance from the portions directly under the channel regions of a semiconductor substrate to source electrode.
COPYRIGHT: (C)1978,JPO&Japio
JP14001376A 1976-11-19 1976-11-19 Junction type field effect transistor Pending JPS5363987A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14001376A JPS5363987A (en) 1976-11-19 1976-11-19 Junction type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14001376A JPS5363987A (en) 1976-11-19 1976-11-19 Junction type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5363987A true JPS5363987A (en) 1978-06-07

Family

ID=15258895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14001376A Pending JPS5363987A (en) 1976-11-19 1976-11-19 Junction type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5363987A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58223373A (en) * 1982-06-21 1983-12-24 Nec Corp Dual gate type field effect transistor
US4942440A (en) * 1982-10-25 1990-07-17 General Electric Company High voltage semiconductor devices with reduced on-resistance

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915112A (en) * 1972-05-31 1974-02-09

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915112A (en) * 1972-05-31 1974-02-09

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58223373A (en) * 1982-06-21 1983-12-24 Nec Corp Dual gate type field effect transistor
JPH0377671B2 (en) * 1982-06-21 1991-12-11 Nippon Electric Co
US4942440A (en) * 1982-10-25 1990-07-17 General Electric Company High voltage semiconductor devices with reduced on-resistance

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