JPS5363987A - Junction type field effect transistor - Google Patents
Junction type field effect transistorInfo
- Publication number
- JPS5363987A JPS5363987A JP14001376A JP14001376A JPS5363987A JP S5363987 A JPS5363987 A JP S5363987A JP 14001376 A JP14001376 A JP 14001376A JP 14001376 A JP14001376 A JP 14001376A JP S5363987 A JPS5363987 A JP S5363987A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- type field
- junction type
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To make possible the use of a substrate having an impurity concentration of the extent at which channels may be directly formed and make unncessary the use of a substrate having an epitaxial layer by setting patterns in a second gate region and decreasing the resistance from the portions directly under the channel regions of a semiconductor substrate to source electrode.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14001376A JPS5363987A (en) | 1976-11-19 | 1976-11-19 | Junction type field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14001376A JPS5363987A (en) | 1976-11-19 | 1976-11-19 | Junction type field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5363987A true JPS5363987A (en) | 1978-06-07 |
Family
ID=15258895
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14001376A Pending JPS5363987A (en) | 1976-11-19 | 1976-11-19 | Junction type field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5363987A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58223373A (en) * | 1982-06-21 | 1983-12-24 | Nec Corp | Dual gate type field effect transistor |
US4942440A (en) * | 1982-10-25 | 1990-07-17 | General Electric Company | High voltage semiconductor devices with reduced on-resistance |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4915112A (en) * | 1972-05-31 | 1974-02-09 |
-
1976
- 1976-11-19 JP JP14001376A patent/JPS5363987A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4915112A (en) * | 1972-05-31 | 1974-02-09 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58223373A (en) * | 1982-06-21 | 1983-12-24 | Nec Corp | Dual gate type field effect transistor |
JPH0377671B2 (en) * | 1982-06-21 | 1991-12-11 | Nippon Electric Co | |
US4942440A (en) * | 1982-10-25 | 1990-07-17 | General Electric Company | High voltage semiconductor devices with reduced on-resistance |
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