JPS5334479A - Manufacture for semiconductor device having double base construction - Google Patents

Manufacture for semiconductor device having double base construction

Info

Publication number
JPS5334479A
JPS5334479A JP10931376A JP10931376A JPS5334479A JP S5334479 A JPS5334479 A JP S5334479A JP 10931376 A JP10931376 A JP 10931376A JP 10931376 A JP10931376 A JP 10931376A JP S5334479 A JPS5334479 A JP S5334479A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
base construction
double base
domain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10931376A
Other languages
Japanese (ja)
Inventor
Kazuyoshi Shinada
Satoshi Shinozaki
Mamoru Kanazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10931376A priority Critical patent/JPS5334479A/en
Publication of JPS5334479A publication Critical patent/JPS5334479A/en
Pending legal-status Critical Current

Links

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To obtain the high speed IC with less number of masks, by diffusing the impurity deeper to the domain of external base with high concentration and shallower to the internal base domain with low concentration, and by forming the diffusion separating domain with one process simultaneously.
COPYRIGHT: (C)1978,JPO&Japio
JP10931376A 1976-09-11 1976-09-11 Manufacture for semiconductor device having double base construction Pending JPS5334479A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10931376A JPS5334479A (en) 1976-09-11 1976-09-11 Manufacture for semiconductor device having double base construction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10931376A JPS5334479A (en) 1976-09-11 1976-09-11 Manufacture for semiconductor device having double base construction

Publications (1)

Publication Number Publication Date
JPS5334479A true JPS5334479A (en) 1978-03-31

Family

ID=14507032

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10931376A Pending JPS5334479A (en) 1976-09-11 1976-09-11 Manufacture for semiconductor device having double base construction

Country Status (1)

Country Link
JP (1) JPS5334479A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55104201U (en) * 1979-01-16 1980-07-21
JPS5598786A (en) * 1979-01-24 1980-07-28 Hitachi Ltd Light emitting diode lighting system
JPS55124256A (en) * 1979-03-16 1980-09-25 Sony Corp Method of fabricating semiconductor integrated circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55104201U (en) * 1979-01-16 1980-07-21
JPS5598786A (en) * 1979-01-24 1980-07-28 Hitachi Ltd Light emitting diode lighting system
JPS55124256A (en) * 1979-03-16 1980-09-25 Sony Corp Method of fabricating semiconductor integrated circuit

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