JPS5230379A - Process of semiconductor device - Google Patents

Process of semiconductor device

Info

Publication number
JPS5230379A
JPS5230379A JP10721775A JP10721775A JPS5230379A JP S5230379 A JPS5230379 A JP S5230379A JP 10721775 A JP10721775 A JP 10721775A JP 10721775 A JP10721775 A JP 10721775A JP S5230379 A JPS5230379 A JP S5230379A
Authority
JP
Japan
Prior art keywords
semiconductor device
simplify
diffusion
procedure
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10721775A
Other languages
Japanese (ja)
Inventor
Shuzo Saeki
Hiroshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10721775A priority Critical patent/JPS5230379A/en
Publication of JPS5230379A publication Critical patent/JPS5230379A/en
Pending legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE: To simplify a process of semiconductor device by using a procedure, in which on both surfaces of semiconductor wafer the oxidation layers containing impurities with different concentration are formed at first and treatment of diffusion are made at the next.
COPYRIGHT: (C)1977,JPO&Japio
JP10721775A 1975-09-04 1975-09-04 Process of semiconductor device Pending JPS5230379A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10721775A JPS5230379A (en) 1975-09-04 1975-09-04 Process of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10721775A JPS5230379A (en) 1975-09-04 1975-09-04 Process of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5230379A true JPS5230379A (en) 1977-03-08

Family

ID=14453444

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10721775A Pending JPS5230379A (en) 1975-09-04 1975-09-04 Process of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5230379A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6350013A (en) * 1986-08-20 1988-03-02 Meidensha Electric Mfg Co Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6350013A (en) * 1986-08-20 1988-03-02 Meidensha Electric Mfg Co Ltd Manufacture of semiconductor device

Similar Documents

Publication Publication Date Title
JPS5230379A (en) Process of semiconductor device
JPS5338271A (en) Semiconductor device
JPS51139263A (en) Method of selective oxidation of silicon substrate
JPS5345177A (en) Production of semiconductor device
JPS5258379A (en) Production of semiconductor element
JPS5258360A (en) Production of semiconductor device
JPS5274280A (en) Semiconductor device and its production
JPS5334479A (en) Manufacture for semiconductor device having double base construction
JPS5275266A (en) Production of semiconductor device
JPS51132762A (en) Heat-treatment method of semiconductor device
JPS5377168A (en) Production of semiconductor device
JPS5219968A (en) Semiconductor ic manufacturig process
JPS5275268A (en) Method of diffusing impurity into semiconductor
JPS52154344A (en) Impurity diffusion method
JPS5248974A (en) Process for production of diffusion type semiconductor device
JPS5230171A (en) Method for fabrication of semiconductor device
JPS51147252A (en) Manufacturing process of semiconductor device
JPS51117573A (en) Manufacturing method of semiconductor
JPS5384690A (en) Field effect transistor
JPS51123557A (en) Impurity concentration measurement mask of semiconductor base
JPS5250174A (en) Negative resistance element
JPS52154343A (en) Production of semiconductor device
JPS52179A (en) Method of fabricating semiconductor
JPS5270777A (en) Manufacture of semiconductor device
JPS5261956A (en) Production of semiconductor device