JPS53119686A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS53119686A
JPS53119686A JP3394877A JP3394877A JPS53119686A JP S53119686 A JPS53119686 A JP S53119686A JP 3394877 A JP3394877 A JP 3394877A JP 3394877 A JP3394877 A JP 3394877A JP S53119686 A JPS53119686 A JP S53119686A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
shade
utilization
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3394877A
Other languages
Japanese (ja)
Other versions
JPS6032992B2 (en
Inventor
Kazuo Terada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP52033948A priority Critical patent/JPS6032992B2/en
Publication of JPS53119686A publication Critical patent/JPS53119686A/en
Publication of JPS6032992B2 publication Critical patent/JPS6032992B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE: To form double diffused layers without fine alignment through the utilization of the shade of resist film by implanting ions in a direction diagonal to substrate.
COPYRIGHT: (C)1978,JPO&Japio
JP52033948A 1977-03-29 1977-03-29 Manufacturing method of semiconductor device Expired JPS6032992B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52033948A JPS6032992B2 (en) 1977-03-29 1977-03-29 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52033948A JPS6032992B2 (en) 1977-03-29 1977-03-29 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS53119686A true JPS53119686A (en) 1978-10-19
JPS6032992B2 JPS6032992B2 (en) 1985-07-31

Family

ID=12400718

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52033948A Expired JPS6032992B2 (en) 1977-03-29 1977-03-29 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6032992B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55151363A (en) * 1979-05-14 1980-11-25 Chiyou Lsi Gijutsu Kenkyu Kumiai Mos semiconductor device and fabricating method of the same
JPS5710617U (en) * 1980-06-11 1982-01-20
JPS62155565A (en) * 1985-12-27 1987-07-10 Toshiba Corp Insulated-gate field effect transistor and manufacture thereof
US4863556A (en) * 1985-09-30 1989-09-05 Siemens Aktiengesellschaft Method for transferring superfine photoresist structures
JPH02291173A (en) * 1989-04-28 1990-11-30 Nec Corp Manufacture of mos transistor
US6071781A (en) * 1996-07-15 2000-06-06 Nec Corporation Method of fabricating lateral MOS transistor
WO2006072575A2 (en) * 2005-01-06 2006-07-13 Infineon Technologies Ag Ldmos transistor
JP2013247347A (en) * 2012-05-29 2013-12-09 Canon Inc Semiconductor device and manufacturing method of the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4837218A (en) * 1971-09-11 1973-06-01
JPS5368079A (en) * 1976-11-30 1978-06-17 Cho Lsi Gijutsu Kenkyu Kumiai Short channel mos transistor and method of producing same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4837218A (en) * 1971-09-11 1973-06-01
JPS5368079A (en) * 1976-11-30 1978-06-17 Cho Lsi Gijutsu Kenkyu Kumiai Short channel mos transistor and method of producing same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55151363A (en) * 1979-05-14 1980-11-25 Chiyou Lsi Gijutsu Kenkyu Kumiai Mos semiconductor device and fabricating method of the same
JPS5710617U (en) * 1980-06-11 1982-01-20
US4863556A (en) * 1985-09-30 1989-09-05 Siemens Aktiengesellschaft Method for transferring superfine photoresist structures
JPS62155565A (en) * 1985-12-27 1987-07-10 Toshiba Corp Insulated-gate field effect transistor and manufacture thereof
JPH02291173A (en) * 1989-04-28 1990-11-30 Nec Corp Manufacture of mos transistor
US6071781A (en) * 1996-07-15 2000-06-06 Nec Corporation Method of fabricating lateral MOS transistor
WO2006072575A2 (en) * 2005-01-06 2006-07-13 Infineon Technologies Ag Ldmos transistor
WO2006072575A3 (en) * 2005-01-06 2007-01-11 Infineon Technologies Ag Ldmos transistor
US7365402B2 (en) 2005-01-06 2008-04-29 Infineon Technologies Ag LDMOS transistor
JP2013247347A (en) * 2012-05-29 2013-12-09 Canon Inc Semiconductor device and manufacturing method of the same

Also Published As

Publication number Publication date
JPS6032992B2 (en) 1985-07-31

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