JPS5266372A - Manufacture of silicon single crystal - Google Patents

Manufacture of silicon single crystal

Info

Publication number
JPS5266372A
JPS5266372A JP14367375A JP14367375A JPS5266372A JP S5266372 A JPS5266372 A JP S5266372A JP 14367375 A JP14367375 A JP 14367375A JP 14367375 A JP14367375 A JP 14367375A JP S5266372 A JPS5266372 A JP S5266372A
Authority
JP
Japan
Prior art keywords
single crystal
manufacture
silicon single
conductivity type
type impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14367375A
Other languages
Japanese (ja)
Inventor
Toshio Tanaka
Kenji Hirakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
NEC Corp
Original Assignee
NEC Home Electronics Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd, Nippon Electric Co Ltd filed Critical NEC Home Electronics Ltd
Priority to JP14367375A priority Critical patent/JPS5266372A/en
Publication of JPS5266372A publication Critical patent/JPS5266372A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain Si single crystal which has short lifetime, by introducing moderate amount of an inverse conductivity type impurity together with the main conductivity type impurity into the high purity Si.
COPYRIGHT: (C)1977,JPO&Japio
JP14367375A 1975-11-28 1975-11-28 Manufacture of silicon single crystal Pending JPS5266372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14367375A JPS5266372A (en) 1975-11-28 1975-11-28 Manufacture of silicon single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14367375A JPS5266372A (en) 1975-11-28 1975-11-28 Manufacture of silicon single crystal

Publications (1)

Publication Number Publication Date
JPS5266372A true JPS5266372A (en) 1977-06-01

Family

ID=15344265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14367375A Pending JPS5266372A (en) 1975-11-28 1975-11-28 Manufacture of silicon single crystal

Country Status (1)

Country Link
JP (1) JPS5266372A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6126591A (en) * 1984-07-18 1986-02-05 Fujitsu Ltd Crystal growing method
JP2015226066A (en) * 2014-05-28 2015-12-14 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ Semiconductor element, silicon wafer, and silicon ingot

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6126591A (en) * 1984-07-18 1986-02-05 Fujitsu Ltd Crystal growing method
JPH0362679B2 (en) * 1984-07-18 1991-09-26 Fujitsu Ltd
JP2015226066A (en) * 2014-05-28 2015-12-14 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ Semiconductor element, silicon wafer, and silicon ingot
US9786748B2 (en) 2014-05-28 2017-10-10 Infineon Technologies Ag Semiconductor device, silicon wafer and silicon ingot
JP2018024580A (en) * 2014-05-28 2018-02-15 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ Semiconductor element, silicon wafer and silicon ingot
JP2020074381A (en) * 2014-05-28 2020-05-14 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ Semiconductor element, silicon wafer and silicon ingot
US10910475B2 (en) 2014-05-28 2021-02-02 Infineon Technologies Ag Method of manufacturing a silicon wafer

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