JPS5252899A - Apparatus for liquid phase epitaxial crystal growth - Google Patents
Apparatus for liquid phase epitaxial crystal growthInfo
- Publication number
- JPS5252899A JPS5252899A JP50129087A JP12908775A JPS5252899A JP S5252899 A JPS5252899 A JP S5252899A JP 50129087 A JP50129087 A JP 50129087A JP 12908775 A JP12908775 A JP 12908775A JP S5252899 A JPS5252899 A JP S5252899A
- Authority
- JP
- Japan
- Prior art keywords
- liquid phase
- crystal growth
- phase epitaxial
- epitaxial crystal
- algaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE:To make easy external operation on crystal growth of GaAs, AlGaAs using liquid phase epitaxial method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50129087A JPS5252899A (en) | 1975-10-27 | 1975-10-27 | Apparatus for liquid phase epitaxial crystal growth |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50129087A JPS5252899A (en) | 1975-10-27 | 1975-10-27 | Apparatus for liquid phase epitaxial crystal growth |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5252899A true JPS5252899A (en) | 1977-04-28 |
JPS5628876B2 JPS5628876B2 (en) | 1981-07-04 |
Family
ID=15000744
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50129087A Granted JPS5252899A (en) | 1975-10-27 | 1975-10-27 | Apparatus for liquid phase epitaxial crystal growth |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5252899A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5366881A (en) * | 1976-11-26 | 1978-06-14 | Mitsubishi Electric Corp | Epitaxial growing apparatus in liquid phase |
JPS558626U (en) * | 1978-06-30 | 1980-01-21 | ||
US10518058B2 (en) | 2003-02-21 | 2019-12-31 | ResMed Pty Ltd | Mask assembly |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6066478U (en) * | 1983-10-06 | 1985-05-11 | 株式会社長尾庖丁製作所 | Anti-slip device for knife handle |
-
1975
- 1975-10-27 JP JP50129087A patent/JPS5252899A/en active Granted
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5366881A (en) * | 1976-11-26 | 1978-06-14 | Mitsubishi Electric Corp | Epitaxial growing apparatus in liquid phase |
JPS558626U (en) * | 1978-06-30 | 1980-01-21 | ||
US10518058B2 (en) | 2003-02-21 | 2019-12-31 | ResMed Pty Ltd | Mask assembly |
US10556084B2 (en) | 2003-02-21 | 2020-02-11 | ResMed Pty Ltd | Mask assembly |
US10561813B2 (en) | 2003-02-21 | 2020-02-18 | Resmed Pty Ltd. | Mask assembly |
US11000664B2 (en) | 2003-02-21 | 2021-05-11 | ResMed Pty Ltd | Mask assembly |
US11077276B2 (en) | 2003-02-21 | 2021-08-03 | ResMed Pty Ltd | Mask assembly |
US11090455B2 (en) | 2003-02-21 | 2021-08-17 | ResMed Pty Ltd | Nasal assembly |
US11103666B2 (en) | 2003-02-21 | 2021-08-31 | ResMed Pty Ltd | Mask assembly |
US11420004B2 (en) | 2003-02-21 | 2022-08-23 | ResMed Pty Ltd | Mask assembly |
US11433207B2 (en) | 2003-02-21 | 2022-09-06 | ResMed Pty Ltd | Mask assembly |
US11497876B2 (en) | 2003-02-21 | 2022-11-15 | ResMed Pty Ltd | Mask assembly |
US11583652B2 (en) | 2003-02-21 | 2023-02-21 | ResMed Pty Ltd | Mask assembly |
Also Published As
Publication number | Publication date |
---|---|
JPS5628876B2 (en) | 1981-07-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5252899A (en) | Apparatus for liquid phase epitaxial crystal growth | |
JPS5260052A (en) | Phase control circuit featuring self-run frequency setting medium | |
JPS51111476A (en) | Method of liquid phase epitaxial crystal growth | |
JPS5378765A (en) | Semiconductor wafer heating stand for gas phase growth | |
JPS51140285A (en) | Crystal processing method | |
JPS51139774A (en) | Liquid phase growing device | |
JPS52143577A (en) | Method for slicing rod-like members | |
JPS51114067A (en) | Liquid phase epitaxial growth towards the top of alxga1-xas base | |
JPS5214577A (en) | Contacting apparatus | |
JPS524782A (en) | Liquid phase epitaxial growth method | |
JPS5244796A (en) | Production of gallium arsenide single crystal | |
JPS51126186A (en) | Stress measurement method using liquid crystal | |
JPS51140561A (en) | Liquid phase epitaxial growing method | |
JPS5211860A (en) | Liquid phase epitaxial device | |
JPS5262698A (en) | Working method of garnet crystal | |
JPS53139970A (en) | Liquid phase epitaxial growth method of gaas crystal | |
JPS5215485A (en) | Process for growth of ribbon crystals by lateral pulling | |
JPS5249989A (en) | Growth method of liquid phase epitaxial | |
JPS5228863A (en) | Process for growing in liquid phase | |
JPS52116071A (en) | Process for liquid phase epitaxial growth | |
JPS528769A (en) | Semiconductor device | |
JPS5274207A (en) | Carrier frequency control unit | |
JPS5261958A (en) | Method and device for liquid phase crystal crowth | |
JPS51141577A (en) | Method and apparatus for epitaxial growth in the liquid phase | |
JPS52103952A (en) | Liquid phase epitaxial crowth method of semiconductor crystal |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |