JPS52156581A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS52156581A
JPS52156581A JP7414676A JP7414676A JPS52156581A JP S52156581 A JPS52156581 A JP S52156581A JP 7414676 A JP7414676 A JP 7414676A JP 7414676 A JP7414676 A JP 7414676A JP S52156581 A JPS52156581 A JP S52156581A
Authority
JP
Japan
Prior art keywords
semiconductor device
forming
al2o3
formation
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7414676A
Other languages
English (en)
Inventor
Akira Noma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7414676A priority Critical patent/JPS52156581A/ja
Publication of JPS52156581A publication Critical patent/JPS52156581A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Element Separation (AREA)
JP7414676A 1976-06-23 1976-06-23 Semiconductor device Pending JPS52156581A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7414676A JPS52156581A (en) 1976-06-23 1976-06-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7414676A JPS52156581A (en) 1976-06-23 1976-06-23 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS52156581A true JPS52156581A (en) 1977-12-27

Family

ID=13538727

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7414676A Pending JPS52156581A (en) 1976-06-23 1976-06-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS52156581A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0042552A2 (en) * 1980-06-16 1981-12-30 Kabushiki Kaisha Toshiba MOS type semiconductor device
JPH042155A (ja) * 1990-04-18 1992-01-07 Fuji Electric Co Ltd 浸漬形沸騰冷却装置
JPH07105830A (ja) * 1993-02-10 1995-04-21 Futaba Corp 電界放出素子およびその製造方法
CN103337513A (zh) * 2013-05-28 2013-10-02 清华大学 半导体结构及其形成方法
CN103578934A (zh) * 2012-07-24 2014-02-12 中国科学院微电子研究所 一种硅基绝缘体上锗衬底结构及其制备方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0042552A2 (en) * 1980-06-16 1981-12-30 Kabushiki Kaisha Toshiba MOS type semiconductor device
JPH042155A (ja) * 1990-04-18 1992-01-07 Fuji Electric Co Ltd 浸漬形沸騰冷却装置
JPH07105830A (ja) * 1993-02-10 1995-04-21 Futaba Corp 電界放出素子およびその製造方法
CN103578934A (zh) * 2012-07-24 2014-02-12 中国科学院微电子研究所 一种硅基绝缘体上锗衬底结构及其制备方法
CN103337513A (zh) * 2013-05-28 2013-10-02 清华大学 半导体结构及其形成方法

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