JPS52156581A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS52156581A JPS52156581A JP7414676A JP7414676A JPS52156581A JP S52156581 A JPS52156581 A JP S52156581A JP 7414676 A JP7414676 A JP 7414676A JP 7414676 A JP7414676 A JP 7414676A JP S52156581 A JPS52156581 A JP S52156581A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- forming
- al2o3
- formation
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Element Separation (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7414676A JPS52156581A (en) | 1976-06-23 | 1976-06-23 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7414676A JPS52156581A (en) | 1976-06-23 | 1976-06-23 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52156581A true JPS52156581A (en) | 1977-12-27 |
Family
ID=13538727
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7414676A Pending JPS52156581A (en) | 1976-06-23 | 1976-06-23 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52156581A (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0042552A2 (en) * | 1980-06-16 | 1981-12-30 | Kabushiki Kaisha Toshiba | MOS type semiconductor device |
JPH042155A (ja) * | 1990-04-18 | 1992-01-07 | Fuji Electric Co Ltd | 浸漬形沸騰冷却装置 |
JPH07105830A (ja) * | 1993-02-10 | 1995-04-21 | Futaba Corp | 電界放出素子およびその製造方法 |
CN103337513A (zh) * | 2013-05-28 | 2013-10-02 | 清华大学 | 半导体结构及其形成方法 |
CN103578934A (zh) * | 2012-07-24 | 2014-02-12 | 中国科学院微电子研究所 | 一种硅基绝缘体上锗衬底结构及其制备方法 |
-
1976
- 1976-06-23 JP JP7414676A patent/JPS52156581A/ja active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0042552A2 (en) * | 1980-06-16 | 1981-12-30 | Kabushiki Kaisha Toshiba | MOS type semiconductor device |
JPH042155A (ja) * | 1990-04-18 | 1992-01-07 | Fuji Electric Co Ltd | 浸漬形沸騰冷却装置 |
JPH07105830A (ja) * | 1993-02-10 | 1995-04-21 | Futaba Corp | 電界放出素子およびその製造方法 |
CN103578934A (zh) * | 2012-07-24 | 2014-02-12 | 中国科学院微电子研究所 | 一种硅基绝缘体上锗衬底结构及其制备方法 |
CN103337513A (zh) * | 2013-05-28 | 2013-10-02 | 清华大学 | 半导体结构及其形成方法 |
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