JPS5350672A - Production of substrate for semiconductor device - Google Patents
Production of substrate for semiconductor deviceInfo
- Publication number
- JPS5350672A JPS5350672A JP12567076A JP12567076A JPS5350672A JP S5350672 A JPS5350672 A JP S5350672A JP 12567076 A JP12567076 A JP 12567076A JP 12567076 A JP12567076 A JP 12567076A JP S5350672 A JPS5350672 A JP S5350672A
- Authority
- JP
- Japan
- Prior art keywords
- production
- substrate
- semiconductor device
- single crystal
- crystal films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To reduce autodoping to single crystal films at the time of forming semiconductor single crystal films and production of semiconductor devices by preventing the reaction on the back of insulator single crystal plates.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12567076A JPS5350672A (en) | 1976-10-19 | 1976-10-19 | Production of substrate for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12567076A JPS5350672A (en) | 1976-10-19 | 1976-10-19 | Production of substrate for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5350672A true JPS5350672A (en) | 1978-05-09 |
Family
ID=14915741
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12567076A Pending JPS5350672A (en) | 1976-10-19 | 1976-10-19 | Production of substrate for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5350672A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006100724A (en) * | 2004-09-30 | 2006-04-13 | Oki Electric Ind Co Ltd | Method for manufacturing semiconductor device |
CN110396724A (en) * | 2019-08-07 | 2019-11-01 | 苏州恒嘉晶体材料有限公司 | A kind of processing method of sapphire optical piece |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3663319A (en) * | 1968-11-20 | 1972-05-16 | Gen Motors Corp | Masking to prevent autodoping of epitaxial deposits |
US3769104A (en) * | 1970-03-27 | 1973-10-30 | Hitachi Ltd | Method of preventing autodoping during the epitaxial growth of compound semiconductors from the vapor phase |
JPS4929099A (en) * | 1972-07-12 | 1974-03-15 | ||
JPS50159255A (en) * | 1974-06-11 | 1975-12-23 |
-
1976
- 1976-10-19 JP JP12567076A patent/JPS5350672A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3663319A (en) * | 1968-11-20 | 1972-05-16 | Gen Motors Corp | Masking to prevent autodoping of epitaxial deposits |
US3769104A (en) * | 1970-03-27 | 1973-10-30 | Hitachi Ltd | Method of preventing autodoping during the epitaxial growth of compound semiconductors from the vapor phase |
JPS4929099A (en) * | 1972-07-12 | 1974-03-15 | ||
JPS50159255A (en) * | 1974-06-11 | 1975-12-23 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006100724A (en) * | 2004-09-30 | 2006-04-13 | Oki Electric Ind Co Ltd | Method for manufacturing semiconductor device |
CN110396724A (en) * | 2019-08-07 | 2019-11-01 | 苏州恒嘉晶体材料有限公司 | A kind of processing method of sapphire optical piece |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5244173A (en) | Method of flat etching of silicon substrate | |
JPS5293285A (en) | Structure for semiconductor device | |
JPS5247673A (en) | Process for production of silicon crystal film | |
JPS5350672A (en) | Production of substrate for semiconductor device | |
JPS53128285A (en) | Semiconductor device and production of the same | |
JPS53104162A (en) | Forming method for epitaxial layer on semiconductor wafer | |
JPS52128063A (en) | Manufacture of semiconductor device | |
JPS5279654A (en) | Production of semiconductor device | |
JPS5261475A (en) | Production of silicon crystal film | |
JPS5247675A (en) | Process for production of semiconductor device | |
JPS5419681A (en) | Dielectric isolating substrate and production of the same | |
JPS51124941A (en) | A device for displaying by liquid crystal | |
JPS52130567A (en) | Preparation of semiconductor device | |
JPS5279772A (en) | Production of semiconductor device | |
JPS5329086A (en) | Production of semiconductor device | |
JPS5311574A (en) | Production of semiconductor device | |
JPS5380160A (en) | Manufacture of substrate for semiconductor device | |
JPS5260581A (en) | Semiconductor device | |
JPS51117887A (en) | Semiconductor ic device | |
JPS5273673A (en) | Production of semiconductor device | |
JPS5436192A (en) | Manufacture for semiconductor | |
JPS5384691A (en) | Production of semiconductor device | |
JPS5338991A (en) | Semiconductor device | |
JPS52144978A (en) | Production of semiconductor device | |
JPS5258372A (en) | Semiconductor device and its production |