JPS5271139A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS5271139A
JPS5271139A JP50146446A JP14644675A JPS5271139A JP S5271139 A JPS5271139 A JP S5271139A JP 50146446 A JP50146446 A JP 50146446A JP 14644675 A JP14644675 A JP 14644675A JP S5271139 A JPS5271139 A JP S5271139A
Authority
JP
Japan
Prior art keywords
semiconductor memory
cubically
intersection
arranging
points
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50146446A
Other languages
Japanese (ja)
Other versions
JPS596069B2 (en
Inventor
Kiyoo Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50146446A priority Critical patent/JPS596069B2/en
Publication of JPS5271139A publication Critical patent/JPS5271139A/en
Publication of JPS596069B2 publication Critical patent/JPS596069B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To make small the occupancy area of the memory cell, by arranging 2 data lines cubically, in the 2 points of intersection/bit cell sytem.
JP50146446A 1975-12-10 1975-12-10 hand tie memory Expired JPS596069B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50146446A JPS596069B2 (en) 1975-12-10 1975-12-10 hand tie memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50146446A JPS596069B2 (en) 1975-12-10 1975-12-10 hand tie memory

Publications (2)

Publication Number Publication Date
JPS5271139A true JPS5271139A (en) 1977-06-14
JPS596069B2 JPS596069B2 (en) 1984-02-08

Family

ID=15407820

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50146446A Expired JPS596069B2 (en) 1975-12-10 1975-12-10 hand tie memory

Country Status (1)

Country Link
JP (1) JPS596069B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57111061A (en) * 1980-12-26 1982-07-10 Fujitsu Ltd Semiconductor memory unit
JPH01307261A (en) * 1988-06-03 1989-12-12 Mitsubishi Electric Corp Semiconductor storage device
US4891747A (en) * 1984-06-25 1990-01-02 Texas Instruments Incorporated Lightly-doped drain transistor structure in contactless DRAM cell with buried source/drain
US4992986A (en) * 1981-05-29 1991-02-12 Hitachi, Ltd. Semiconductor memory

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57111061A (en) * 1980-12-26 1982-07-10 Fujitsu Ltd Semiconductor memory unit
JPH0319710B2 (en) * 1980-12-26 1991-03-15 Fujitsu Ltd
US4992986A (en) * 1981-05-29 1991-02-12 Hitachi, Ltd. Semiconductor memory
US4891747A (en) * 1984-06-25 1990-01-02 Texas Instruments Incorporated Lightly-doped drain transistor structure in contactless DRAM cell with buried source/drain
JPH01307261A (en) * 1988-06-03 1989-12-12 Mitsubishi Electric Corp Semiconductor storage device

Also Published As

Publication number Publication date
JPS596069B2 (en) 1984-02-08

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