JPS52107736A - Mos random access memory - Google Patents

Mos random access memory

Info

Publication number
JPS52107736A
JPS52107736A JP2475276A JP2475276A JPS52107736A JP S52107736 A JPS52107736 A JP S52107736A JP 2475276 A JP2475276 A JP 2475276A JP 2475276 A JP2475276 A JP 2475276A JP S52107736 A JPS52107736 A JP S52107736A
Authority
JP
Japan
Prior art keywords
random access
access memory
mos random
mos
nodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2475276A
Other languages
Japanese (ja)
Other versions
JPS5617754B2 (en
Inventor
Koji Matsuki
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2475276A priority Critical patent/JPS52107736A/en
Publication of JPS52107736A publication Critical patent/JPS52107736A/en
Publication of JPS5617754B2 publication Critical patent/JPS5617754B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To obtain MOS/RAM which makes possible high-speed operation further by forming new reading circuit through installation of transfer gate between FF nodes.
JP2475276A 1976-03-08 1976-03-08 Mos random access memory Granted JPS52107736A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2475276A JPS52107736A (en) 1976-03-08 1976-03-08 Mos random access memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2475276A JPS52107736A (en) 1976-03-08 1976-03-08 Mos random access memory

Publications (2)

Publication Number Publication Date
JPS52107736A true JPS52107736A (en) 1977-09-09
JPS5617754B2 JPS5617754B2 (en) 1981-04-24

Family

ID=12146863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2475276A Granted JPS52107736A (en) 1976-03-08 1976-03-08 Mos random access memory

Country Status (1)

Country Link
JP (1) JPS52107736A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5634185A (en) * 1979-08-27 1981-04-06 Nec Corp Memory circuit
JPS62117192A (en) * 1985-09-19 1987-05-28 ジリンクス・インコ−ポレイテツド 5-transistor memory cell and memory circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5634185A (en) * 1979-08-27 1981-04-06 Nec Corp Memory circuit
JPS62117192A (en) * 1985-09-19 1987-05-28 ジリンクス・インコ−ポレイテツド 5-transistor memory cell and memory circuit
JPH048878B2 (en) * 1985-09-19 1992-02-18

Also Published As

Publication number Publication date
JPS5617754B2 (en) 1981-04-24

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