JPS5215262A - Semiconductor device and its manufacturing method - Google Patents
Semiconductor device and its manufacturing methodInfo
- Publication number
- JPS5215262A JPS5215262A JP50091090A JP9109075A JPS5215262A JP S5215262 A JPS5215262 A JP S5215262A JP 50091090 A JP50091090 A JP 50091090A JP 9109075 A JP9109075 A JP 9109075A JP S5215262 A JPS5215262 A JP S5215262A
- Authority
- JP
- Japan
- Prior art keywords
- manufacturing
- semiconductor device
- emitter
- collector
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000010354 integration Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50091090A JPS5215262A (en) | 1975-07-28 | 1975-07-28 | Semiconductor device and its manufacturing method |
US05/706,596 US4128845A (en) | 1975-07-28 | 1976-07-19 | Semiconductor integrated circuit devices having inverted frustum-shape contact layers |
GB30065/76A GB1514370A (en) | 1975-07-28 | 1976-07-20 | Semiconductor integrated circuit devices and method of preparing the same |
CA257,488A CA1042559A (en) | 1975-07-28 | 1976-07-21 | Closely spaced ic contact structure and manufacture |
FR7622906A FR2319978A1 (fr) | 1975-07-28 | 1976-07-27 | Circuits integres semi-conducteurs et procede de preparation |
NLAANVRAGE7608309,A NL180264C (nl) | 1975-07-28 | 1976-07-27 | Bipolaire transistor voor een geintegreerde halfgeleiderschakeling en werkwijzen voor het vervaardigen daarvan. |
DE2633714A DE2633714C2 (de) | 1975-07-28 | 1976-07-27 | Integrierte Halbleiter-Schaltungsanordnung mit einem bipolaren Transistor und Verfahren zu ihrer Herstellung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50091090A JPS5215262A (en) | 1975-07-28 | 1975-07-28 | Semiconductor device and its manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5215262A true JPS5215262A (en) | 1977-02-04 |
Family
ID=14016812
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50091090A Pending JPS5215262A (en) | 1975-07-28 | 1975-07-28 | Semiconductor device and its manufacturing method |
Country Status (7)
Country | Link |
---|---|
US (1) | US4128845A (de) |
JP (1) | JPS5215262A (de) |
CA (1) | CA1042559A (de) |
DE (1) | DE2633714C2 (de) |
FR (1) | FR2319978A1 (de) |
GB (1) | GB1514370A (de) |
NL (1) | NL180264C (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5351985A (en) * | 1976-10-22 | 1978-05-11 | Hitachi Ltd | Semiconductor wiring constitution |
NL7703941A (nl) * | 1977-04-12 | 1978-10-16 | Philips Nv | Werkwijze ter vervaardiging van een halfgelei- derinrichting en inrichting, vervaardigd door toepassing van de werkwijze. |
US4160991A (en) * | 1977-10-25 | 1979-07-10 | International Business Machines Corporation | High performance bipolar device and method for making same |
US4190466A (en) * | 1977-12-22 | 1980-02-26 | International Business Machines Corporation | Method for making a bipolar transistor structure utilizing self-passivating diffusion sources |
NL190710C (nl) * | 1978-02-10 | 1994-07-01 | Nec Corp | Geintegreerde halfgeleiderketen. |
US4236122A (en) * | 1978-04-26 | 1980-11-25 | Bell Telephone Laboratories, Incorporated | Mesa devices fabricated on channeled substrates |
JPS577959A (en) * | 1980-06-19 | 1982-01-16 | Toshiba Corp | Semiconductor device |
US4446613A (en) * | 1981-10-19 | 1984-05-08 | Intel Corporation | Integrated circuit resistor and method of fabrication |
JPS6080267A (ja) * | 1983-10-07 | 1985-05-08 | Toshiba Corp | 半導体集積回路装置の製造方法 |
JPH0719838B2 (ja) * | 1985-07-19 | 1995-03-06 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
US4922318A (en) * | 1985-09-18 | 1990-05-01 | Advanced Micro Devices, Inc. | Bipolar and MOS devices fabricated on same integrated circuit substrate |
US4883772A (en) * | 1986-09-11 | 1989-11-28 | National Semiconductor Corporation | Process for making a self-aligned silicide shunt |
US4904980A (en) * | 1988-08-19 | 1990-02-27 | Westinghouse Electric Corp. | Refractory resistors with etch stop for superconductor integrated circuits |
US6060375A (en) * | 1996-07-31 | 2000-05-09 | Lsi Logic Corporation | Process for forming re-entrant geometry for gate electrode of integrated circuit structure |
US5895960A (en) * | 1996-09-03 | 1999-04-20 | Lucent Technologies Inc. | Thin oxide mask level defined resistor |
US7208361B2 (en) * | 2004-03-24 | 2007-04-24 | Intel Corporation | Replacement gate process for making a semiconductor device that includes a metal gate electrode |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1154201B (de) * | 1960-06-28 | 1963-09-12 | Intermetall | Verfahren zur gleichzeitigen Kontaktierung von zahlreichen Halbleiterbauelementen |
US3519901A (en) * | 1968-01-29 | 1970-07-07 | Texas Instruments Inc | Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation |
CA924026A (en) * | 1970-10-05 | 1973-04-03 | Tokyo Shibaura Electric Co. | Method for manufacturing a semiconductor integrated circuit isolated by dielectric material |
US3738880A (en) * | 1971-06-23 | 1973-06-12 | Rca Corp | Method of making a semiconductor device |
US3780359A (en) * | 1971-12-20 | 1973-12-18 | Ibm | Bipolar transistor with a heterojunction emitter and a method fabricating the same |
US3860836A (en) * | 1972-12-01 | 1975-01-14 | Honeywell Inc | Stabilization of emitter followers |
JPS5513426B2 (de) * | 1974-06-18 | 1980-04-09 |
-
1975
- 1975-07-28 JP JP50091090A patent/JPS5215262A/ja active Pending
-
1976
- 1976-07-19 US US05/706,596 patent/US4128845A/en not_active Expired - Lifetime
- 1976-07-20 GB GB30065/76A patent/GB1514370A/en not_active Expired
- 1976-07-21 CA CA257,488A patent/CA1042559A/en not_active Expired
- 1976-07-27 DE DE2633714A patent/DE2633714C2/de not_active Expired
- 1976-07-27 NL NLAANVRAGE7608309,A patent/NL180264C/xx not_active IP Right Cessation
- 1976-07-27 FR FR7622906A patent/FR2319978A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
NL7608309A (nl) | 1977-02-01 |
GB1514370A (en) | 1978-06-14 |
DE2633714A1 (de) | 1977-02-03 |
CA1042559A (en) | 1978-11-14 |
FR2319978B1 (de) | 1978-12-15 |
DE2633714C2 (de) | 1984-12-06 |
NL180264C (nl) | 1987-01-16 |
NL180264B (nl) | 1986-08-18 |
FR2319978A1 (fr) | 1977-02-25 |
US4128845A (en) | 1978-12-05 |
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