FR2319978A1 - Circuits integres semi-conducteurs et procede de preparation - Google Patents

Circuits integres semi-conducteurs et procede de preparation

Info

Publication number
FR2319978A1
FR2319978A1 FR7622906A FR7622906A FR2319978A1 FR 2319978 A1 FR2319978 A1 FR 2319978A1 FR 7622906 A FR7622906 A FR 7622906A FR 7622906 A FR7622906 A FR 7622906A FR 2319978 A1 FR2319978 A1 FR 2319978A1
Authority
FR
France
Prior art keywords
integrated circuits
semiconductor integrated
preparation process
semiconductor
preparation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7622906A
Other languages
English (en)
Other versions
FR2319978B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of FR2319978A1 publication Critical patent/FR2319978A1/fr
Application granted granted Critical
Publication of FR2319978B1 publication Critical patent/FR2319978B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/53271Conductive materials containing semiconductor material, e.g. polysilicon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251Diffusion into or out of group IV semiconductors
    • H01L21/2254Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2257Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
FR7622906A 1975-07-28 1976-07-27 Circuits integres semi-conducteurs et procede de preparation Granted FR2319978A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50091090A JPS5215262A (en) 1975-07-28 1975-07-28 Semiconductor device and its manufacturing method

Publications (2)

Publication Number Publication Date
FR2319978A1 true FR2319978A1 (fr) 1977-02-25
FR2319978B1 FR2319978B1 (fr) 1978-12-15

Family

ID=14016812

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7622906A Granted FR2319978A1 (fr) 1975-07-28 1976-07-27 Circuits integres semi-conducteurs et procede de preparation

Country Status (7)

Country Link
US (1) US4128845A (fr)
JP (1) JPS5215262A (fr)
CA (1) CA1042559A (fr)
DE (1) DE2633714C2 (fr)
FR (1) FR2319978A1 (fr)
GB (1) GB1514370A (fr)
NL (1) NL180264C (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2387516A1 (fr) * 1977-04-12 1978-11-10 Philips Nv Procede pour fabriquer un dispositif semi-conducteur comportant de tres petits transistors complementaires, et dispositif fabrique de la sorte
EP0139266A2 (fr) * 1983-10-07 1985-05-02 Kabushiki Kaisha Toshiba Dispositif semi-conducteur intégré comportant un transistor MOS et un transistor bipolaire et son procédé de fabrication

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5351985A (en) * 1976-10-22 1978-05-11 Hitachi Ltd Semiconductor wiring constitution
US4160991A (en) * 1977-10-25 1979-07-10 International Business Machines Corporation High performance bipolar device and method for making same
US4190466A (en) * 1977-12-22 1980-02-26 International Business Machines Corporation Method for making a bipolar transistor structure utilizing self-passivating diffusion sources
NL190710C (nl) * 1978-02-10 1994-07-01 Nec Corp Geintegreerde halfgeleiderketen.
US4236122A (en) * 1978-04-26 1980-11-25 Bell Telephone Laboratories, Incorporated Mesa devices fabricated on channeled substrates
JPS577959A (en) * 1980-06-19 1982-01-16 Toshiba Corp Semiconductor device
US4446613A (en) * 1981-10-19 1984-05-08 Intel Corporation Integrated circuit resistor and method of fabrication
JPH0719838B2 (ja) * 1985-07-19 1995-03-06 松下電器産業株式会社 半導体装置およびその製造方法
US4922318A (en) * 1985-09-18 1990-05-01 Advanced Micro Devices, Inc. Bipolar and MOS devices fabricated on same integrated circuit substrate
US4883772A (en) * 1986-09-11 1989-11-28 National Semiconductor Corporation Process for making a self-aligned silicide shunt
US4904980A (en) * 1988-08-19 1990-02-27 Westinghouse Electric Corp. Refractory resistors with etch stop for superconductor integrated circuits
US6060375A (en) * 1996-07-31 2000-05-09 Lsi Logic Corporation Process for forming re-entrant geometry for gate electrode of integrated circuit structure
US5895960A (en) * 1996-09-03 1999-04-20 Lucent Technologies Inc. Thin oxide mask level defined resistor
US7208361B2 (en) * 2004-03-24 2007-04-24 Intel Corporation Replacement gate process for making a semiconductor device that includes a metal gate electrode

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1154201B (de) * 1960-06-28 1963-09-12 Intermetall Verfahren zur gleichzeitigen Kontaktierung von zahlreichen Halbleiterbauelementen
US3519901A (en) * 1968-01-29 1970-07-07 Texas Instruments Inc Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation
CA924026A (en) * 1970-10-05 1973-04-03 Tokyo Shibaura Electric Co. Method for manufacturing a semiconductor integrated circuit isolated by dielectric material
US3738880A (en) * 1971-06-23 1973-06-12 Rca Corp Method of making a semiconductor device
US3780359A (en) * 1971-12-20 1973-12-18 Ibm Bipolar transistor with a heterojunction emitter and a method fabricating the same
US3860836A (en) * 1972-12-01 1975-01-14 Honeywell Inc Stabilization of emitter followers
JPS5513426B2 (fr) * 1974-06-18 1980-04-09

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
*REVUE US ELECTRONICS, VOL. 49, 22 JANVIER 1976 "SELF ALIGNMENT METHOD OF FABRICATING BIPOLAR TRANSISTORS BOOSTS FREQUENCY", PAGES 7E, 8E.) *
PAGES 65-66 *
REVUE JA JOURNAL OF ELECTRONIC ENGINEERING, NO 96, NOVEMBRE 1974 "STEP ELECTRODE TRANSISTOR IN THE IMPROVED RADIO-FREQUENCY CHARACTERISTIC" *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2387516A1 (fr) * 1977-04-12 1978-11-10 Philips Nv Procede pour fabriquer un dispositif semi-conducteur comportant de tres petits transistors complementaires, et dispositif fabrique de la sorte
EP0139266A2 (fr) * 1983-10-07 1985-05-02 Kabushiki Kaisha Toshiba Dispositif semi-conducteur intégré comportant un transistor MOS et un transistor bipolaire et son procédé de fabrication
EP0139266A3 (en) * 1983-10-07 1986-01-22 Kabushiki Kaisha Toshiba A semiconductor integrated circuit device comprising an mos transistor and a bipolar transistor and a manufacturing method of the same
US4818720A (en) * 1983-10-07 1989-04-04 Kabushiki Kaisha Toshiba Method for manufacturing a BiCMOS device
US4965220A (en) * 1983-10-07 1990-10-23 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor integrated circuit device comprising an MOS transistor and a bipolar transistor

Also Published As

Publication number Publication date
NL7608309A (nl) 1977-02-01
GB1514370A (en) 1978-06-14
DE2633714A1 (de) 1977-02-03
CA1042559A (fr) 1978-11-14
FR2319978B1 (fr) 1978-12-15
DE2633714C2 (de) 1984-12-06
NL180264C (nl) 1987-01-16
JPS5215262A (en) 1977-02-04
NL180264B (nl) 1986-08-18
US4128845A (en) 1978-12-05

Similar Documents

Publication Publication Date Title
BE842511A (fr) Dispositif semi-conducteur et son procede de fabrication
FR2309036A1 (fr) Dispositif semiconducteur et son procede de fabrication
FR2326038A1 (fr) Procede de fabrication de circuits integres auto-alignes et dispositifs en resultant
JPS57118667A (en) Integrated circuit semiconductor device
FR2336801A1 (fr) Circuit integre
GB1539890A (en) Semiconductor latch circuits
SE7607216L (sv) Halvledaranordning
GB1543227A (en) Field effect transistor circuits
GB1558349A (en) Making semiconductor device
GB1553417A (en) Semiconductor device manufacture
SE407728B (sv) Halvledararrangemang for logikkretsar
FR2319978A1 (fr) Circuits integres semi-conducteurs et procede de preparation
JPS5239377A (en) Method of manufacturing semiconductor device
FR2313777A1 (fr) Agencement semi-conducteur integre
FR2325196A1 (fr) Dispositif semi-conducteur presentant des courants de fuite en surface reduits et procede de fabrication
FR2316730A1 (fr) Circuit logique integre et son procede de fabrication
FR2335052A1 (fr) Circuit integre
BE849324A (fr) Procede et dispositif de fabrication de capillaires en forme de fils
GB1557961A (en) Semiconductor circuits
GB1554273A (en) Semiconductor device manufacture
FR2326779A1 (fr) Procede de fabrication de circuits integres
BE839550A (fr) Procede integre
SE7601984L (sv) Reglerbar integrerad krets
FR2334205A1 (fr) Dispositif semi-conducteur et son procede de fabrication
GB1553730A (en) Semiconductor device and method of manufacturing the same

Legal Events

Date Code Title Description
TP Transmission of property
CA Change of address