JPS5599776A - Variable resistance semiconductor device - Google Patents
Variable resistance semiconductor deviceInfo
- Publication number
- JPS5599776A JPS5599776A JP710079A JP710079A JPS5599776A JP S5599776 A JPS5599776 A JP S5599776A JP 710079 A JP710079 A JP 710079A JP 710079 A JP710079 A JP 710079A JP S5599776 A JPS5599776 A JP S5599776A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- poly
- insulating film
- layers
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To vary the vale of resistance corresponding to the voltage impressed on a conducting layer by placing the conducting layer on the upper or lower side of a poly-silicon resistor layer via a thin insulating film.
CONSTITUTION: On insulating film 14, poly-silicon resistor layer 18 is formed in a narrow flat pattern and in a manner that it overlaps n-type layer 16. Next, patterning is operated so as to retain thin film 14 only below layer 18. Next, thin insulating film 20 is formed on the surface of layer 18, and low resistance poly-silicon layer 22, as the 2nd control electrode layer, is formed in a rectangular flat pattern and in such a manner that it overlaps layer 18. Next, by diffusing a donor impurity by using layer 22 as a mask, n+-type contact regions 24 and 26 are formed on both sides of region 16, and at the same time, layer 22 is made a low resistance layer, and contact layers 18A and 18B are formed on both ends of layer 18. Next, electrode layers 30 and 32, which are to become resistor terminals, and electrode layers 34 and 36, which are to become control terminals, are formed. When control voltage is impressed on layers 34 and 36, the distribution of carriers in layer 18 is changed and the value of resistance is thereby changed.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP710079A JPS5599776A (en) | 1979-01-26 | 1979-01-26 | Variable resistance semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP710079A JPS5599776A (en) | 1979-01-26 | 1979-01-26 | Variable resistance semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5599776A true JPS5599776A (en) | 1980-07-30 |
Family
ID=11656653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP710079A Pending JPS5599776A (en) | 1979-01-26 | 1979-01-26 | Variable resistance semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5599776A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6144454A (en) * | 1984-08-09 | 1986-03-04 | Fujitsu Ltd | Semiconductor device |
| EP0981157A2 (en) * | 1998-08-17 | 2000-02-23 | Nec Corporation | Circuitry and method of forming the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5068284A (en) * | 1973-10-17 | 1975-06-07 | ||
| JPS52122484A (en) * | 1976-04-07 | 1977-10-14 | Hitachi Ltd | Field effect type polisilicon resistance element |
-
1979
- 1979-01-26 JP JP710079A patent/JPS5599776A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5068284A (en) * | 1973-10-17 | 1975-06-07 | ||
| JPS52122484A (en) * | 1976-04-07 | 1977-10-14 | Hitachi Ltd | Field effect type polisilicon resistance element |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6144454A (en) * | 1984-08-09 | 1986-03-04 | Fujitsu Ltd | Semiconductor device |
| JPH0345904B2 (en) * | 1984-08-09 | 1991-07-12 | Fujitsu Ltd | |
| EP0981157A2 (en) * | 1998-08-17 | 2000-02-23 | Nec Corporation | Circuitry and method of forming the same |
| EP0981157A3 (en) * | 1998-08-17 | 2003-05-07 | NEC Electronics Corporation | Circuitry and method of forming the same |
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