JPS5211883A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5211883A
JPS5211883A JP50087916A JP8791675A JPS5211883A JP S5211883 A JPS5211883 A JP S5211883A JP 50087916 A JP50087916 A JP 50087916A JP 8791675 A JP8791675 A JP 8791675A JP S5211883 A JPS5211883 A JP S5211883A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
shall
prevented
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50087916A
Other languages
Japanese (ja)
Other versions
JPS6048905B2 (en
Inventor
Kazuo Sato
Mitsuhiko Ueno
Yasoji Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP50087916A priority Critical patent/JPS6048905B2/en
Priority to GB2976176A priority patent/GB1558502A/en
Publication of JPS5211883A publication Critical patent/JPS5211883A/en
Priority to MY8100315A priority patent/MY8100315A/en
Publication of JPS6048905B2 publication Critical patent/JPS6048905B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:The thyristor phenomenon due to the parasitic bipolar in a complementary field-effect transistor circuit (CMOS circuit) shall be prevented.
JP50087916A 1975-07-18 1975-07-18 Semiconductor integrated circuit device Expired JPS6048905B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP50087916A JPS6048905B2 (en) 1975-07-18 1975-07-18 Semiconductor integrated circuit device
GB2976176A GB1558502A (en) 1975-07-18 1976-07-16 Semiconductor integrated circuit device
MY8100315A MY8100315A (en) 1975-07-18 1981-12-30 Semiconductor r circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50087916A JPS6048905B2 (en) 1975-07-18 1975-07-18 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS5211883A true JPS5211883A (en) 1977-01-29
JPS6048905B2 JPS6048905B2 (en) 1985-10-30

Family

ID=13928233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50087916A Expired JPS6048905B2 (en) 1975-07-18 1975-07-18 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6048905B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58192359A (en) * 1982-05-07 1983-11-09 Hitachi Ltd Semiconductor device
JPS6089960A (en) * 1984-08-06 1985-05-20 Nec Corp Semiconductor integrated circuit device
JPS62165969A (en) * 1986-01-17 1987-07-22 Sanyo Electric Co Ltd Cmos semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58192359A (en) * 1982-05-07 1983-11-09 Hitachi Ltd Semiconductor device
JPH0410227B2 (en) * 1982-05-07 1992-02-24
JPS6089960A (en) * 1984-08-06 1985-05-20 Nec Corp Semiconductor integrated circuit device
JPH0351103B2 (en) * 1984-08-06 1991-08-05 Nippon Electric Co
JPS62165969A (en) * 1986-01-17 1987-07-22 Sanyo Electric Co Ltd Cmos semiconductor device

Also Published As

Publication number Publication date
JPS6048905B2 (en) 1985-10-30

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