JPS5211872A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5211872A
JPS5211872A JP50087397A JP8739775A JPS5211872A JP S5211872 A JPS5211872 A JP S5211872A JP 50087397 A JP50087397 A JP 50087397A JP 8739775 A JP8739775 A JP 8739775A JP S5211872 A JPS5211872 A JP S5211872A
Authority
JP
Japan
Prior art keywords
semiconductor device
parasiticly
confining
cmos
shall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50087397A
Other languages
Japanese (ja)
Other versions
JPS626347B2 (en
Inventor
Kazuo Sato
Mitsuhiko Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP50087397A priority Critical patent/JPS5211872A/en
Priority to GB2928276A priority patent/GB1559582A/en
Priority to FR7621993A priority patent/FR2318503A1/en
Priority to CH923676A priority patent/CH611739A5/en
Priority to DE19762632447 priority patent/DE2632447A1/en
Publication of JPS5211872A publication Critical patent/JPS5211872A/en
Priority to US05/917,175 priority patent/US4152717A/en
Priority to MY8100316A priority patent/MY8100316A/en
Publication of JPS626347B2 publication Critical patent/JPS626347B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: In the CMOS, by confining the operation of the parasitic bipolar Tr, the occurrence of an abnormal current due to the operation of a thyristor circuit constituted parasiticly shall be prevented.
COPYRIGHT: (C)1977,JPO&Japio
JP50087397A 1975-07-18 1975-07-18 Semiconductor device Granted JPS5211872A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP50087397A JPS5211872A (en) 1975-07-18 1975-07-18 Semiconductor device
GB2928276A GB1559582A (en) 1975-07-18 1976-07-14 Complementary mosfet device
FR7621993A FR2318503A1 (en) 1975-07-18 1976-07-19 COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR CIRCUIT
CH923676A CH611739A5 (en) 1975-07-18 1976-07-19 CMOS Semiconductor circuit
DE19762632447 DE2632447A1 (en) 1975-07-18 1976-07-19 CMOS SEMICONDUCTOR DEVICE
US05/917,175 US4152717A (en) 1975-07-18 1978-06-20 Complementary MOSFET device
MY8100316A MY8100316A (en) 1975-07-18 1981-12-30 A complementary mosfet device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50087397A JPS5211872A (en) 1975-07-18 1975-07-18 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5211872A true JPS5211872A (en) 1977-01-29
JPS626347B2 JPS626347B2 (en) 1987-02-10

Family

ID=13913732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50087397A Granted JPS5211872A (en) 1975-07-18 1975-07-18 Semiconductor device

Country Status (6)

Country Link
JP (1) JPS5211872A (en)
CH (1) CH611739A5 (en)
DE (1) DE2632447A1 (en)
FR (1) FR2318503A1 (en)
GB (1) GB1559582A (en)
MY (1) MY8100316A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58210660A (en) * 1982-06-01 1983-12-07 Seiko Epson Corp Semiconductor device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53128281A (en) * 1977-04-15 1978-11-09 Hitachi Ltd Insulated gate field effect type semiconductor device for large power
GB1549130A (en) * 1977-06-01 1979-08-01 Hughes Microelectronics Ltd Cm Monolithic integrated circuit
JPS5591162A (en) * 1978-12-27 1980-07-10 Fujitsu Ltd Semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL297002A (en) * 1962-08-23 1900-01-01
US3916430A (en) * 1973-03-14 1975-10-28 Rca Corp System for eliminating substrate bias effect in field effect transistor circuits

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58210660A (en) * 1982-06-01 1983-12-07 Seiko Epson Corp Semiconductor device
JPH0534832B2 (en) * 1982-06-01 1993-05-25 Seiko Epson Corp

Also Published As

Publication number Publication date
FR2318503B1 (en) 1980-05-16
FR2318503A1 (en) 1977-02-11
GB1559582A (en) 1980-01-23
DE2632447A1 (en) 1977-01-20
CH611739A5 (en) 1979-06-15
MY8100316A (en) 1981-12-31
JPS626347B2 (en) 1987-02-10

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