JPS52103985A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS52103985A JPS52103985A JP2035076A JP2035076A JPS52103985A JP S52103985 A JPS52103985 A JP S52103985A JP 2035076 A JP2035076 A JP 2035076A JP 2035076 A JP2035076 A JP 2035076A JP S52103985 A JPS52103985 A JP S52103985A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- layer
- herto
- properities
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To obtain the semiconductor laser that is good in its working properities and whose working temperature is low, by fixing the value of X of the Al×Ga1-xAs layer to 0.15≤X≤0.30, as the layer establishes the GaAs-AlxGa1-xAs herto junction.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2035076A JPS52103985A (en) | 1976-02-26 | 1976-02-26 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2035076A JPS52103985A (en) | 1976-02-26 | 1976-02-26 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52103985A true JPS52103985A (en) | 1977-08-31 |
Family
ID=12024664
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2035076A Pending JPS52103985A (en) | 1976-02-26 | 1976-02-26 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52103985A (en) |
-
1976
- 1976-02-26 JP JP2035076A patent/JPS52103985A/en active Pending
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