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Sony Corp
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Sony Corp
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Application filed by Sony CorpfiledCriticalSony Corp
Priority to JP2035076ApriorityCriticalpatent/JPS52103985A/en
Publication of JPS52103985ApublicationCriticalpatent/JPS52103985A/en
PURPOSE: To obtain the semiconductor laser that is good in its working properities and whose working temperature is low, by fixing the value of X of the Al×Ga1-xAs layer to 0.15≤X≤0.30, as the layer establishes the GaAs-AlxGa1-xAs herto junction.