JPS5228888A - Emission semiconductor device - Google Patents

Emission semiconductor device

Info

Publication number
JPS5228888A
JPS5228888A JP10553775A JP10553775A JPS5228888A JP S5228888 A JPS5228888 A JP S5228888A JP 10553775 A JP10553775 A JP 10553775A JP 10553775 A JP10553775 A JP 10553775A JP S5228888 A JPS5228888 A JP S5228888A
Authority
JP
Japan
Prior art keywords
semiconductor device
emission semiconductor
emission
overlaying
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10553775A
Other languages
Japanese (ja)
Inventor
Junichi Nishizawa
Yasuo Okuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI KENKIYUU SHINKOUKAI
Semiconductor Research Foundation
Original Assignee
HANDOUTAI KENKIYUU SHINKOUKAI
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI KENKIYUU SHINKOUKAI, Semiconductor Research Foundation filed Critical HANDOUTAI KENKIYUU SHINKOUKAI
Priority to JP10553775A priority Critical patent/JPS5228888A/en
Publication of JPS5228888A publication Critical patent/JPS5228888A/en
Pending legal-status Critical Current

Links

Landscapes

  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To fix N type layer by overlaying crystal of wide forbidden band on the portion of emission junction and to make emission of P layer efficiently.
COPYRIGHT: (C)1977,JPO&Japio
JP10553775A 1975-08-29 1975-08-29 Emission semiconductor device Pending JPS5228888A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10553775A JPS5228888A (en) 1975-08-29 1975-08-29 Emission semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10553775A JPS5228888A (en) 1975-08-29 1975-08-29 Emission semiconductor device

Publications (1)

Publication Number Publication Date
JPS5228888A true JPS5228888A (en) 1977-03-04

Family

ID=14410322

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10553775A Pending JPS5228888A (en) 1975-08-29 1975-08-29 Emission semiconductor device

Country Status (1)

Country Link
JP (1) JPS5228888A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62264680A (en) * 1986-05-13 1987-11-17 Toshiba Corp Light-emitting diode
JPS62296484A (en) * 1986-06-17 1987-12-23 Seiko Epson Corp Blue light emitting element
JPH01128517A (en) * 1987-11-13 1989-05-22 Mitsubishi Monsanto Chem Co Epitaxial wafer
JPH01137679A (en) * 1987-11-24 1989-05-30 Matsushita Electric Ind Co Ltd Semiconductor light emitting element

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JOURNAL OF APPLIED PHYSICS#N10=1966 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62264680A (en) * 1986-05-13 1987-11-17 Toshiba Corp Light-emitting diode
JPS62296484A (en) * 1986-06-17 1987-12-23 Seiko Epson Corp Blue light emitting element
JPH01128517A (en) * 1987-11-13 1989-05-22 Mitsubishi Monsanto Chem Co Epitaxial wafer
JPH01137679A (en) * 1987-11-24 1989-05-30 Matsushita Electric Ind Co Ltd Semiconductor light emitting element

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