JPS51134071A - Method to eliminate crystal defects of silicon - Google Patents

Method to eliminate crystal defects of silicon

Info

Publication number
JPS51134071A
JPS51134071A JP5719375A JP5719375A JPS51134071A JP S51134071 A JPS51134071 A JP S51134071A JP 5719375 A JP5719375 A JP 5719375A JP 5719375 A JP5719375 A JP 5719375A JP S51134071 A JPS51134071 A JP S51134071A
Authority
JP
Japan
Prior art keywords
silicon
crystal defects
eliminate crystal
eliminate
monocrystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5719375A
Other languages
Japanese (ja)
Inventor
Toshio Omori
Masaru Nakayama
Yasushi Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON DENSHI KINZOKU KK
Original Assignee
NIPPON DENSHI KINZOKU KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON DENSHI KINZOKU KK filed Critical NIPPON DENSHI KINZOKU KK
Priority to JP5719375A priority Critical patent/JPS51134071A/en
Publication of JPS51134071A publication Critical patent/JPS51134071A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To easily eliminate and reduce the crystal defects existing in Si monocrystals.
COPYRIGHT: (C)1976,JPO&Japio
JP5719375A 1975-05-16 1975-05-16 Method to eliminate crystal defects of silicon Pending JPS51134071A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5719375A JPS51134071A (en) 1975-05-16 1975-05-16 Method to eliminate crystal defects of silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5719375A JPS51134071A (en) 1975-05-16 1975-05-16 Method to eliminate crystal defects of silicon

Publications (1)

Publication Number Publication Date
JPS51134071A true JPS51134071A (en) 1976-11-20

Family

ID=13048640

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5719375A Pending JPS51134071A (en) 1975-05-16 1975-05-16 Method to eliminate crystal defects of silicon

Country Status (1)

Country Link
JP (1) JPS51134071A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5596641A (en) * 1979-01-19 1980-07-23 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of fabricating silicon monocrystal wafer
JPS5613737A (en) * 1979-07-13 1981-02-10 Hitachi Ltd Manufacture of semiconductor device
JPS60247935A (en) * 1984-05-23 1985-12-07 Toshiba Ceramics Co Ltd Manufacture of semiconductor wafer
JPS61183916A (en) * 1985-02-08 1986-08-16 Toshiba Corp Manufacture of semiconductor substrate
JPS62123098A (en) * 1985-11-22 1987-06-04 Toshiba Ceramics Co Ltd Silicon single crystal
JPH03123027A (en) * 1989-10-05 1991-05-24 Toshiba Ceramics Co Ltd Cleaning process of silicon wafer
JPH0636979A (en) * 1992-03-27 1994-02-10 Toshiba Corp Semiconductor device
JPH07165496A (en) * 1994-09-05 1995-06-27 Toshiba Ceramics Co Ltd Production of silicon wafer
JPH07165495A (en) * 1994-09-02 1995-06-27 Toshiba Ceramics Co Ltd Silicon wafer
US7659216B2 (en) 2004-10-13 2010-02-09 Shin-Etsu Handotai Co., Ltd. Method for producing annealed wafer and annealed wafer

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583375B2 (en) * 1979-01-19 1983-01-21 超エル・エス・アイ技術研究組合 Manufacturing method of silicon single crystal wafer
JPS5596641A (en) * 1979-01-19 1980-07-23 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of fabricating silicon monocrystal wafer
JPS5613737A (en) * 1979-07-13 1981-02-10 Hitachi Ltd Manufacture of semiconductor device
JPS60247935A (en) * 1984-05-23 1985-12-07 Toshiba Ceramics Co Ltd Manufacture of semiconductor wafer
JPH0518254B2 (en) * 1984-05-23 1993-03-11 Toshiba Ceramics Co
JPS61183916A (en) * 1985-02-08 1986-08-16 Toshiba Corp Manufacture of semiconductor substrate
JPH0561240B2 (en) * 1985-11-22 1993-09-03 Toshiba Ceramics Co
JPS62123098A (en) * 1985-11-22 1987-06-04 Toshiba Ceramics Co Ltd Silicon single crystal
JPH03123027A (en) * 1989-10-05 1991-05-24 Toshiba Ceramics Co Ltd Cleaning process of silicon wafer
JPH0636979A (en) * 1992-03-27 1994-02-10 Toshiba Corp Semiconductor device
JPH07165495A (en) * 1994-09-02 1995-06-27 Toshiba Ceramics Co Ltd Silicon wafer
JPH07165496A (en) * 1994-09-05 1995-06-27 Toshiba Ceramics Co Ltd Production of silicon wafer
US7659216B2 (en) 2004-10-13 2010-02-09 Shin-Etsu Handotai Co., Ltd. Method for producing annealed wafer and annealed wafer

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