JPH1154550A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPH1154550A JPH1154550A JP9205562A JP20556297A JPH1154550A JP H1154550 A JPH1154550 A JP H1154550A JP 9205562 A JP9205562 A JP 9205562A JP 20556297 A JP20556297 A JP 20556297A JP H1154550 A JPH1154550 A JP H1154550A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- resin
- semiconductor pellet
- temporary fixing
- pad electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81905—Combinations of bonding methods provided for in at least two different groups from H01L2224/818 - H01L2224/81904
- H01L2224/81907—Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
- H01L2224/92122—Sequential connecting processes the first connecting process involving a bump connector
- H01L2224/92125—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
Landscapes
- Wire Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はパンプ電極を有する
半導体ペレットを樹脂を介して配線基板に接着した構造
の半導体装置の製造方法に関する。The present invention relates to a method for manufacturing a semiconductor device having a structure in which a semiconductor pellet having a pump electrode is bonded to a wiring board via a resin.
【０００２】[0002]
【従来の技術】電子回路装置は内部の回路ブロックを機
能分けし、各機能ブロック毎にモジュール化した電子部
品を組み合わせることにより必要とされる機能、性能の
電子回路装置を実現している。小型、薄型、軽量化が要
求される電子回路装置ではこれに使用される電子部品も
モジュール単位で小型、薄型化が要求されている。この
ような要求に対して、図７に示す構造の半導体装置が知
られている。図において、１は半導体ペレットで、内部
に多数の半導体素子（図示せず）を形成し各半導体素子
を内部接続して電子回路を構成した半導体基板２の一主
面を絶縁膜（図示せず）で覆い、この絶縁膜の要部に窓
明けして、窓明け部分に下地電極（図示せず）を形成
し、さらにこの下地電極にバンプ電極３を形成してい
る。４は配線基板で、樹脂やセラミクスなどの絶縁基板
５の主面に半導体ペレット１のバンプ電極３が重合され
るパッド電極６が形成されている。この配線基板４の主
面や内部には導電箔よりなる導電パターンが必要に応じ
て形成されているが図示省略している。７は半導体ペレ
ット１と配線基板４の対向面間に供給され、パンプ電極
３とパッド電極６とを重合させた状態で重合部の加圧状
態を保って、半導体ペレット１と配線基板４とを接着す
る接着用樹脂を示す。この半導体装置は半導体ペレット
１が剥き出しでバンプ電極３は４０〜６０μｍあるいは
それ以下にできるため小型、薄型、軽量化が実現でき
る。この半導体装置は半導体ペレット１と配線基板４と
を接着用樹脂７で接着することによりバンプ電極３とパ
ッド電極６の圧着状態を保ち、半導体ペレット１表面の
配線（図示せず）を外部の腐食性ガスから保護している
が、接着用樹脂７として一般的に用いられるエポキシ樹
脂は加熱され硬化が促進される。この接着用樹脂７は硬
化時の収縮により半導体ペレット１と配線基板４とを強
固に接着し、各電極の接続状態を良好にしている。また
この半導体装置は、半導体ペレット１のみで一つのモジ
ュールを構成できるが、配線基板４上の図外領域に他の
半導体ペレットや電子部品をマウントする領域を形成し
て、半田リフローなどの手段でマウントし半導体ペレッ
ト１と共に高機能、高集積度のモジュールを構成するこ
とが出来る。2. Description of the Related Art An electronic circuit device divides internal circuit blocks into functions, and realizes an electronic circuit device having required functions and performances by combining electronic components modularized for each functional block. In electronic circuit devices that are required to be small, thin, and lightweight, electronic components used in the electronic circuit devices are also required to be small and thin for each module. In response to such a demand, a semiconductor device having a structure shown in FIG. 7 is known. In the figure, reference numeral 1 denotes a semiconductor pellet, in which a large number of semiconductor elements (not shown) are formed, and each semiconductor element is internally connected to each other to form an electronic circuit on one main surface of an insulating film (not shown). ), A window is formed in a main part of the insulating film, a base electrode (not shown) is formed in the window, and a bump electrode 3 is formed on the base electrode. Reference numeral 4 denotes a wiring board, on which a pad electrode 6 on which the bump electrode 3 of the semiconductor pellet 1 is superimposed is formed on a main surface of an insulating substrate 5 such as a resin or ceramics. A conductive pattern made of a conductive foil is formed on the main surface or inside of the wiring board 4 as necessary, but is not shown. Numeral 7 is supplied between the opposing surfaces of the semiconductor pellet 1 and the wiring substrate 4, and keeps the pressurized state of the overlapping portion in a state where the pump electrode 3 and the pad electrode 6 are superimposed, thereby connecting the semiconductor pellet 1 and the wiring substrate 4. The bonding resin to be bonded is shown. In this semiconductor device, since the semiconductor pellet 1 is exposed and the bump electrode 3 can be made to have a size of 40 to 60 μm or less, a reduction in size, thickness, and weight can be realized. In this semiconductor device, the semiconductor pellet 1 and the wiring substrate 4 are adhered to each other with an adhesive resin 7 so that the bump electrode 3 and the pad electrode 6 are kept in a compressed state, and the wiring (not shown) on the surface of the semiconductor pellet 1 is exposed to external corrosion. The epoxy resin, which is generally used as the bonding resin 7 while being protected from the reactive gas, is heated to accelerate the curing. The adhesive resin 7 firmly adheres the semiconductor pellet 1 and the wiring substrate 4 by shrinkage during curing, thereby improving the connection state of each electrode. In this semiconductor device, one module can be constituted by the semiconductor pellet 1 alone. However, an area for mounting other semiconductor pellets and electronic components is formed in an unshown area on the wiring board 4 and is formed by means such as solder reflow. A high-performance, highly-integrated module can be configured together with the semiconductor pellet 1 by mounting.
【０００３】[0003]
【発明が解決しようとする課題】このようにして配線基
板４にマウントされた半導体ペレット１は電気的な特性
検査がされて、その結果、良判定されたものについて周
辺の電子部品が半田リフローなどの手段によりマウント
され最終的な電気的特性検査が行われて一つの半導体装
置を完成する。ところが、電気的特性検査の結果が不良
判定された場合、接着用樹脂７は一旦硬化すると剥離し
にくく、剥離できても大部分が配線基板４に残留しその
量が一定しないため、接着用樹脂の再供給量の過不足を
生じる。また半導体ペレット１を剥離する際に電極３、
６部分に過大な力が加えられるとパッド電極６が損傷し
易く、電極６を損傷させずに密着性の良好な樹脂７のみ
を剥離できない。そのため、電気的特性検査の結果、不
良判定されたものは廃棄せざるを得ず、半導体ペレット
１がマイクロプロセッサなどの高価なものではコストの
無駄が大きいだけでなく、これまでの製造作業や用力費
も無駄となり改善が望まれていた。The semiconductor pellets 1 mounted on the wiring board 4 in this way are subjected to an electrical characteristic test. As a result, if the semiconductor pellets 1 are determined to be good, peripheral electronic components are solder reflowed. And a final electrical characteristic test is performed to complete one semiconductor device. However, when the result of the electrical characteristic test is determined to be defective, the bonding resin 7 is hard to peel once cured, and even if it can be peeled, most of the adhesive resin 7 remains on the wiring board 4 and the amount thereof is not constant. Oversupply and deficiency of the resupply volume When the semiconductor pellet 1 is peeled off,
When an excessive force is applied to the six portions, the pad electrode 6 is easily damaged, and only the resin 7 having good adhesion cannot be peeled off without damaging the electrode 6. For this reason, as a result of the electrical characteristic inspection, those determined to be defective have to be discarded. If the semiconductor pellet 1 is expensive such as a microprocessor, not only is the waste of the cost large, but also the manufacturing work and power Costs were wasted and improvements were desired.
【０００４】[0004]
【課題を解決するための手段】本発明は上記課題の解決
を目的として提案されたもので、バンプ電極を有する半
導体ペレットとパッド電極を有する配線基板とを対向さ
せて、バンプ電極とパッド電極とを重合させ各電極間の
圧接状態を保って半導体ペレットと配線基板間を接着用
樹脂にて接着した半導体装置において、上記接着用樹脂
が、半導体ペレットの一部を配線基板に連結する仮固定
用樹脂と、半導体ペレットと配線基板間の仮固定用樹脂
による接着部を除く残り部分を接着する本固定用樹脂と
からなることを特徴とする半導体装置を提供する。また
本発明は、バンプ電極を有する半導体ペレットとバンプ
電極と対応して配置されたパッド電極で囲まれる領域内
に仮固定用樹脂を配置した配線基板とを対向させて、バ
ンプ電極とパッド電極とを重合させ各電極間の圧接状態
を保って仮固定用樹脂にて半導体ペレットと配線基板と
を仮固定した仮固定構体を形成する工程と、仮固定構体
の半導体ペレットの電気的特性検査を行う工程と、良判
定された仮固定構体の半導体ペレットと配線基板間の間
隙に液状樹脂を供給して半導体ペレットと配線基板とを
固定する工程とを備えたことを特徴とする半導体装置の
製造方法を提供する。SUMMARY OF THE INVENTION The present invention has been proposed for the purpose of solving the above-mentioned problems, and a semiconductor pellet having a bump electrode and a wiring substrate having a pad electrode are opposed to each other to form a bump electrode and a pad electrode. In a semiconductor device in which the semiconductor pellet and the wiring substrate are adhered with an adhesive resin while maintaining a pressure-contact state between the respective electrodes while maintaining a pressure-contact state between the electrodes, the adhesive resin is used for temporary fixing for connecting a part of the semiconductor pellet to the wiring substrate. A semiconductor device comprising: a resin; and a permanent fixing resin that adheres to a remaining portion of the semiconductor pellet and the wiring board except for an adhesive portion by a temporary fixing resin. Further, the present invention provides a semiconductor pellet having a bump electrode and a wiring substrate on which a temporary fixing resin is arranged in a region surrounded by a pad electrode arranged corresponding to the bump electrode, and the bump electrode and the pad electrode And forming a temporary fixing structure in which the semiconductor pellet and the wiring board are temporarily fixed with the temporary fixing resin while maintaining the pressure contact state between the respective electrodes, and an electrical characteristic test of the semiconductor pellet of the temporary fixing structure is performed. And a step of supplying a liquid resin to a gap between the semiconductor pellet of the temporarily fixed structure and the wiring substrate, which are determined to be good, and fixing the semiconductor pellet and the wiring substrate. I will provide a.
【０００５】[0005]
【発明の実施の形態】本発明による半導体装置は、半導
体ペレットと配線基板とを仮固定して、半導体ペレット
の電気的特性検査を行い、良判定されたものについて、
半導体ペレットと配線基板とを液状の樹脂にて本固定す
ることにより製造されるものであるが、本固定に先立っ
て、半導体ペレットを加熱してバンプ電極とパッド電極
とを熱圧着することができる。また、本固定する際に、
半導体ペレットも十分高温に加熱してバンプ電極とパッ
ド電極とを熱圧着するとともに液状樹脂を硬化させるこ
ともできる。さらには、電気的特性検査の結果、不良判
定された仮固定構体の半導体ペレットを再加熱して仮固
定用樹脂から剥離させることにより配線基板を再利用で
きる。電気的特性検査の結果、良判定されたものについ
ては、液状樹脂で半導体ペレットと配線基板とを本固定
するが、配線基板のパッド電極で囲まれた領域に貫通孔
が形成しておいて、この貫通孔を通して仮固定構体に液
状樹脂を供給することにより容易に本固定できる。ま
た、配線基板のパッド電極直下に緩衝層を形成し、半導
体ペレットを仮固定した状態で、バンプ電極とパッド電
極とが弾性接触するようにしておけば、半導体ペレット
を仮固定した状態でパッド電極の変形を最小に抑えるこ
とができ、半導体ペレットが不良であった場合、配線基
板を繰り返し利用することができる。BEST MODE FOR CARRYING OUT THE INVENTION In a semiconductor device according to the present invention, a semiconductor pellet and a wiring substrate are temporarily fixed, and an electrical characteristic test of the semiconductor pellet is performed.
It is manufactured by permanently fixing the semiconductor pellet and the wiring board with a liquid resin, but prior to the permanent fixing, the semiconductor pellet can be heated and the bump electrode and the pad electrode can be thermocompression bonded. . Also, when fixing the book,
The semiconductor pellet can also be heated to a sufficiently high temperature to thermocompression-bond the bump electrode and the pad electrode and to cure the liquid resin. Furthermore, the wiring board can be reused by reheating the semiconductor pellets of the temporary fixing structure determined to be defective as a result of the electrical characteristic inspection and peeling the semiconductor pellets from the temporary fixing resin. As a result of the electrical characteristic test, for those determined to be good, the semiconductor pellet and the wiring board are permanently fixed with a liquid resin, but a through hole is formed in a region surrounded by the pad electrode of the wiring board, The permanent fixing can be easily performed by supplying the liquid resin to the temporary fixing structure through the through holes. In addition, if a buffer layer is formed immediately below the pad electrode of the wiring substrate and the bump electrode and the pad electrode are in elastic contact with the semiconductor pellet temporarily fixed, the pad electrode is temporarily fixed with the semiconductor pellet. Can be minimized, and if the semiconductor pellet is defective, the wiring substrate can be used repeatedly.
【０００６】[0006]
【実施例】以下に本発明による半導体装置の製造方法を
図１乃至図Ｘから説明する。図において図７と同一物に
は同一符号を付して重複する説明を省略する。図中半導
体装置として相異するのは、半導体ペレット１と配線基
板４を接着する接着用樹脂のみである。即ち、図１半導
体装置は配線基板４上のパッド電極６で囲まれた領域内
の一部に仮固定用樹脂８を形成して、その周縁を本固定
用樹脂９にて固定している。この仮固定用樹脂８は例え
ばアクリル樹脂などの熱可塑性樹脂が好適で、厚さがバ
ンプ電極３とパッド電極６のそれぞれの高さの和より高
く設定されたシートを、半導体ペレット１下面の面積の
１／２５乃至１／２の面積となるように裁断したものが
用いられ、その一部が図２に示すように配線基板４に熱
圧着または超音波接合されて固定されている。この配線
基板４に対して、図３に示すように加熱手段（図示せ
ず）を具えた吸着コレット９によって吸着された半導体
ペレット１を供給する。バンプ電極３とパッド電極６と
が重合するように位置決めして各電極３、４の重合部を
加圧すると、仮固定用樹脂８は半導体ペレット１との当
接面が溶融して縮退し、バンプ電極３とパッド電極６と
が密接する。このとき、各電極３、６は機械的に密接し
熱圧着しないように半導体ペレット１の加熱温度が設定
される。このようにして各電極３、６の接続が完了する
と、好ましくは半導体ペレット１にエアを吹き付けてそ
の温度を仮固定用樹脂８の溶融温度より低下させて固化
させてから、吸着コレット１から半導体ペレット１を解
放し、図４に示すように半導体ペレット１と配線基板４
とが電気的に接続された仮固定構体１０を得る。仮固定
用樹脂８は溶融状態から固化する際に収縮するが、この
収縮によって半導体ペレット１は配線基板４に引き寄せ
られ、バンプ電極３とパッド電極６の接続が確実にな
る。このようにして仮固定構体１０は半導体ペレット１
と配線基板４とが電気的に接続しているため、図示省略
するが配線基板６に外部から電源や測定装置を接続して
半導体ペレット１の電気的特性検査を行い、バンプ電極
３とパッド電極６の接続、配線基板４上の導電パターン
（図示せず）を含めて半導体ペレット１の動作を確認す
る。この電気的特性検査の結果に基づいて半導体ペレッ
ト１の良否判別がなされるが、良判定の場合、図５に示
すように、シリンジ１１を用いて液状樹脂１２を半導体
ペレット１と配線基板４の間に注入し、半導体ペレット
１や配線基板４を加熱したり、高温雰囲気中で一定時間
保管して液状樹脂１２を硬化させ、図１に示す半導体装
置を得る。また、電気的特性検査の結果が不良判定の場
合、半導体ペレット１を仮固定用樹脂８が溶融する温度
に再加熱する。これにより半導体ペレット１は仮固定用
樹脂８から剥離可能となり、バンプ電極３とパッド電極
６の接続部も互いに密接しているだけで圧接力が除かれ
ると容易に分離できるため、配線基板４から半導体ペレ
ット１を容易に分離でき、図２に近い状態に戻せる。図
２に示す状態と異なるのは、仮固定用樹脂８が変形し、
その量が減少していことのみで再利用が可能な状態に戻
せる。従って、この配線基板４に仮固定用樹脂８を新し
いものに交換する不足分を補充して再利用できる。この
ように、本発明による半導体装置は、半導体ペレット１
を配線基板４に仮固定して電気的に接続した状態で電気
的な特性検査ができ、半導体ペレット１が不良の場合に
は、配線基板４から容易に取り外すことができ、半導体
ペレット１が取り外された配線基板４は再利用可能であ
るため、製造作業の無駄と製造コストの上昇を抑えるこ
とができる。尚、本発明は上記実施例にのみ限定される
ことなく、例えば、配線基板４に接続された状態で良判
定された半導体ペレット１を液状樹脂１２で本固定する
のに先立って、半導体ペレット１をバンプ電極３とパッ
ド電極６とを熱圧着させる温度に加熱して加圧し、各電
極３、６の接続強度を向上させておくことができる。ま
た、半導体ペレット１と配線基板４とを液状樹脂１２に
て本固定する際に、半導体ペレット１を加熱して本固定
用樹脂１２の硬化を促進させるとともに各電極３、６を
熱圧着することもできる。また不良判定された半導体ペ
レット１は再加熱により仮固定用樹脂８から容易に剥離
できるが、再加熱状態で半導体ペレット１を水平面内で
回転させることによりさらに容易に剥離できる。さらに
は、半導体ペレット１と配線基板４の間隙に本固定用の
液状樹脂１２を供給するのにシリンジを用いたが、図６
に示すように、、配線基板４に貫通孔４ａを形成し、こ
の貫通孔４ａから液状樹脂１２を供給することにより、
配線基板４を水平に保ったまま一連の作業ができる。こ
の本固定用樹脂１２として液状の熱硬化性エポキシ樹脂
だけでなく光硬化性の樹脂を用いることにより、より短
時間で樹脂を硬化させることができる。また配線基板４
の絶縁基板５が硬質の材料からなる場合、半導体ペレッ
ト１を仮固定した際にバンプ電極３とパッド電極６とが
圧着状態となり電極の剥離が困難となる場合には、絶縁
基板５とパッド電極６の間に弾力性を有する部材からな
る緩衝層（図示せず）を形成することもできる。DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for manufacturing a semiconductor device according to the present invention will be described below with reference to FIGS. In the figure, the same components as those in FIG. 7 are denoted by the same reference numerals, and duplicate description will be omitted. The only difference between the semiconductor devices in the figure is the bonding resin for bonding the semiconductor pellet 1 and the wiring board 4. That is, in the semiconductor device shown in FIG. 1, a temporary fixing resin 8 is formed in a part of a region surrounded by a pad electrode 6 on a wiring board 4, and the periphery thereof is fixed by a full fixing resin 9. The temporary fixing resin 8 is preferably a thermoplastic resin such as an acrylic resin, for example. A sheet whose thickness is set to be higher than the sum of the heights of the bump electrode 3 and the pad electrode 6 is formed on an area of the lower surface of the semiconductor pellet 1. A part cut to have an area of 1/25 to 1/2 of the above is used, and a part thereof is fixed to the wiring board 4 by thermocompression bonding or ultrasonic bonding as shown in FIG. As shown in FIG. 3, the semiconductor pellet 1 adsorbed by the adsorbing collet 9 provided with a heating means (not shown) is supplied to the wiring board 4. When the overlapping portions of the electrodes 3 and 4 are pressurized by positioning the bump electrodes 3 and the pad electrodes 6 so that they overlap, the temporary fixing resin 8 is shrunk by melting the contact surface with the semiconductor pellet 1, The bump electrode 3 and the pad electrode 6 are in close contact. At this time, the heating temperature of the semiconductor pellet 1 is set so that the electrodes 3 and 6 are in close mechanical contact and do not thermocompress. When the connection between the electrodes 3 and 6 is completed in this way, air is preferably blown to the semiconductor pellet 1 to lower its temperature from the melting temperature of the temporary fixing resin 8 and solidify. The pellet 1 is released, and the semiconductor pellet 1 and the wiring substrate 4 are separated as shown in FIG.
Are temporarily connected to each other to obtain a temporary fixing structure 10. The temporary fixing resin 8 contracts when it solidifies from the molten state, but the semiconductor pellet 1 is attracted to the wiring board 4 by this contraction, and the connection between the bump electrode 3 and the pad electrode 6 is ensured. In this manner, the temporary fixing structure 10 is
Although not shown, a power supply or a measuring device is connected to the wiring substrate 6 from outside to perform an electrical characteristic test of the semiconductor pellet 1, and the bump electrode 3 and the pad electrode 4 are electrically connected to the wiring substrate 4. The operation of the semiconductor pellet 1 including the connection of No. 6 and the conductive pattern (not shown) on the wiring board 4 is confirmed. The quality of the semiconductor pellet 1 is determined based on the result of the electrical characteristic inspection. In the case of the quality determination, as shown in FIG. The semiconductor device shown in FIG. 1 is obtained by heating the semiconductor pellet 1 and the wiring substrate 4 or by storing the same in a high-temperature atmosphere for a certain period of time to cure the liquid resin 12. If the result of the electrical characteristic test is a failure, the semiconductor pellet 1 is reheated to a temperature at which the temporary fixing resin 8 melts. As a result, the semiconductor pellet 1 can be peeled off from the temporary fixing resin 8, and the connection between the bump electrode 3 and the pad electrode 6 can be easily separated when the press-contact force is removed only by being in close contact with each other. The semiconductor pellet 1 can be easily separated and returned to a state close to FIG. The difference from the state shown in FIG. 2 is that the temporary fixing resin 8 is deformed,
It is possible to return to a state that can be reused only by reducing the amount. Therefore, the shortage of replacing the temporary fixing resin 8 with a new one for the wiring board 4 can be supplemented and reused. As described above, the semiconductor device according to the present invention includes the semiconductor pellet 1
In a state where the semiconductor pellet 1 is temporarily fixed to the wiring board 4 and electrically connected thereto, an electrical characteristic test can be performed. If the semiconductor pellet 1 is defective, the semiconductor pellet 1 can be easily removed from the wiring board 4 and the semiconductor pellet 1 can be removed. Since the used wiring board 4 can be reused, it is possible to suppress waste of manufacturing work and increase in manufacturing cost. The present invention is not limited to the above embodiment. For example, prior to fully fixing the semiconductor pellet 1 which is determined to be good in a state of being connected to the wiring board 4 with the liquid resin 12, the semiconductor pellet 1 Is heated to a temperature at which the bump electrode 3 and the pad electrode 6 are thermocompressed and pressurized, so that the connection strength between the electrodes 3 and 6 can be improved. Further, when the semiconductor pellet 1 and the wiring board 4 are permanently fixed with the liquid resin 12, the semiconductor pellet 1 is heated to accelerate the curing of the permanent fixing resin 12, and the electrodes 3 and 6 are thermocompression-bonded. Can also. The semiconductor pellet 1 determined to be defective can be easily peeled off from the temporary fixing resin 8 by reheating, but can be more easily peeled off by rotating the semiconductor pellet 1 in a horizontal plane in the reheated state. Further, a syringe was used to supply the liquid resin 12 for permanent fixing to the gap between the semiconductor pellet 1 and the wiring board 4.
As shown in the figure, by forming a through hole 4a in the wiring board 4 and supplying the liquid resin 12 from the through hole 4a,
A series of operations can be performed while the wiring board 4 is kept horizontal. By using not only a liquid thermosetting epoxy resin but also a photocurable resin as the main fixing resin 12, the resin can be cured in a shorter time. Wiring board 4
If the insulating substrate 5 is made of a hard material, the bump electrode 3 and the pad electrode 6 are brought into a crimped state when the semiconductor pellet 1 is temporarily fixed, and it becomes difficult to peel off the electrode. A buffer layer (not shown) made of a member having elasticity can be formed between the members.
【０００７】[0007]
【発明の効果】以上のように、本発明によれば良品の半
導体ペレットのみ配線基板に本固定し製造でき、不良の
半導体ペレットが取り外された配線基板は再利用できる
ため、製造作業の無駄と製造コストの上昇を抑えること
ができる。As described above, according to the present invention, only a non-defective semiconductor pellet can be permanently fixed to a wiring board and manufactured, and a wiring board from which a defective semiconductor pellet has been removed can be reused. An increase in manufacturing cost can be suppressed.
【図１】 本発明による半導体装置の側断面図FIG. 1 is a side sectional view of a semiconductor device according to the present invention.
【図２】 図１半導体装置の製造方法を示す側断面図FIG. 2 is a side sectional view showing a method of manufacturing the semiconductor device in FIG. 1;
【図３】 図２工程に続く製造工程を示す側断面図FIG. 3 is a side sectional view showing a manufacturing process following the process in FIG. 2;
【図４】 図３工程を経て得られる仮固定構体を示す側
断面図FIG. 4 is a side sectional view showing a temporary fixing structure obtained through the step of FIG. 3;
【図５】 仮固定構体の半導体ペレットと配線基板とを
本固定する状態を示す側断面図FIG. 5 is a side sectional view showing a state where the semiconductor pellet of the temporary fixing structure and the wiring substrate are permanently fixed.
【図６】 本固定作業の他の方法を示す側断面図FIG. 6 is a side sectional view showing another method of the main fixing work.
【図７】 本発明の前提となる従来の半導体装置を示す
側断面図FIG. 7 is a side sectional view showing a conventional semiconductor device which is a premise of the present invention.
１ 半導体ペレット ３ バンプ電極 ４ 配線基板 ６ パッド電極 ８ 仮固定用樹脂 １２ 本固定用樹脂 Reference Signs List 1 semiconductor pellet 3 bump electrode 4 wiring board 6 pad electrode 8 resin for temporary fixing 12 resin for fixing
Claims (7)
ド電極を有する配線基板とを対向させて、バンプ電極と
パッド電極とを重合させ各電極間の圧接状態を保って半
導体ペレットと配線基板間を接着用樹脂にて接着した半
導体装置において、 上記接着用樹脂が、半導体ペレットの一部を配線基板に
連結する仮固定用樹脂と、半導体ペレットと配線基板間
の仮固定用樹脂による接着部を除く残り部分を接着する
本固定用樹脂とからなることを特徴とする半導体装置。1. A semiconductor pellet having a bump electrode and a wiring substrate having a pad electrode are opposed to each other, and the bump electrode and the pad electrode are superposed to bond the semiconductor pellet and the wiring substrate while maintaining a pressure contact state between the electrodes. In the semiconductor device bonded with the resin, the bonding resin is a temporary fixing resin for connecting a part of the semiconductor pellet to the wiring board, and the remaining resin except for a bonding portion of the temporary fixing resin between the semiconductor pellet and the wiring board. A semiconductor device comprising: a main fixing resin for bonding parts.
形成した半導体ペレットとこの半導体ペレットのバンプ
電極と対応する位置にパッド電極を形成しパッド電極で
囲まれる領域内に仮固定用樹脂を配置した配線基板とを
対向させて、バンプ電極とパッド電極とを重合させ各電
極間の圧接状態を保って仮固定用樹脂にて半導体ペレッ
トと配線基板とを仮固定し仮固定構体を形成する工程
と、仮固定構体の半導体ペレットの電気的特性検査を行
う工程と、電気的特性検査の結果、良判定された仮固定
構体の半導体ペレットと配線基板間の間隙に液状樹脂を
供給して、半導体ペレットと配線基板とを固定する工程
とを備えたことを特徴とする半導体装置の製造方法。2. A semiconductor pellet in which a number of bump electrodes are arrayed and formed on a peripheral portion of one main surface, and a pad electrode is formed at a position corresponding to the bump electrode of the semiconductor pellet, and is temporarily fixed in a region surrounded by the pad electrode. The semiconductor substrate and the wiring board are temporarily fixed with the temporary fixing resin while the pressure contact state between the electrodes is maintained by facing the wiring substrate on which the resin is arranged, and the bump electrodes and the pad electrodes are superimposed to form a temporary fixing structure. Forming a step, performing an electrical property test of the semiconductor pellets of the temporary fixing structure, and supplying the liquid resin to a gap between the semiconductor pellet of the temporary fixing structure and the wiring board determined to be good as a result of the electrical property test. And a step of fixing the semiconductor pellet and the wiring substrate.
て固定するのに先立って、半導体ペレットを加熱してバ
ンプ電極とパッド電極とを熱圧着することを特徴とする
請求項２に記載の半導体装置の製造方法。3. The method according to claim 2, wherein prior to fixing the semiconductor pellet and the wiring board with the liquid resin, the semiconductor pellet is heated to thermally bond the bump electrode and the pad electrode. A method for manufacturing a semiconductor device.
て固定する際に、半導体ペレットを加熱してバンプ電極
とパッド電極とを熱圧着するとともに液状樹脂を硬化さ
せることを特徴とする請求項２に記載の半導体装置の製
造方法。4. The method according to claim 1, wherein when the semiconductor pellet and the wiring substrate are fixed with the liquid resin, the semiconductor pellet is heated to thermocompress the bump electrode and the pad electrode and to cure the liquid resin. 3. The method for manufacturing a semiconductor device according to item 2.
固定構体の半導体ペレットを再加熱して仮固定用樹脂か
ら剥離させるようにしたことを特徴とする請求項２に記
載の半導体装置の製造方法。5. The semiconductor device according to claim 2, wherein the semiconductor pellets of the temporary fixing structure determined to be defective as a result of the electrical characteristic inspection are reheated to be separated from the temporary fixing resin. Manufacturing method.
通孔が形成され、この貫通孔を通して仮固定構体に液状
樹脂を供給するようにしたことを特徴とする請求項２に
記載の半導体装置の製造方法。6. The semiconductor according to claim 2, wherein a through hole is formed in a region surrounded by the pad electrode of the wiring board, and the liquid resin is supplied to the temporary fixing structure through the through hole. Device manufacturing method.
し、半導体ペレットを仮固定した状態で、バンプ電極と
パッド電極とが弾性接触するようにしたことを特徴とす
る請求項２に記載の半導体装置の製造方法。7. The semiconductor device according to claim 2, wherein a buffer layer is formed immediately below the pad electrode of the wiring substrate, and the bump electrode and the pad electrode are brought into elastic contact with the semiconductor pellet temporarily fixed. Of manufacturing a semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9205562A JPH1154550A (en) | 1997-07-31 | 1997-07-31 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9205562A JPH1154550A (en) | 1997-07-31 | 1997-07-31 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1154550A true JPH1154550A (en) | 1999-02-26 |
Family
ID=16508958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9205562A Pending JPH1154550A (en) | 1997-07-31 | 1997-07-31 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1154550A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3276652A3 (en) * | 2015-04-02 | 2018-04-25 | Heraeus Deutschland GmbH & Co. KG | Method for producing a substrate arrangement with a glue prefixing means, corresponding substrate arrangement, method for connecting an electronic component with a substrate arrangement using a glue prefixing means formed on the electronic component and/or the substrate arrangement and an electronic component bonded with a substrate arrangement |
-
1997
- 1997-07-31 JP JP9205562A patent/JPH1154550A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3276652A3 (en) * | 2015-04-02 | 2018-04-25 | Heraeus Deutschland GmbH & Co. KG | Method for producing a substrate arrangement with a glue prefixing means, corresponding substrate arrangement, method for connecting an electronic component with a substrate arrangement using a glue prefixing means formed on the electronic component and/or the substrate arrangement and an electronic component bonded with a substrate arrangement |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3663938B2 (en) | Flip chip mounting method | |
| US6100597A (en) | Semiconductor device and method for manufacturing the same | |
| JPH01227444A (en) | Connection structure | |
| JP2005191156A (en) | Wiring plate containing electric component, and its manufacturing method | |
| JP3881751B2 (en) | Semiconductor chip mounting structure and mounting method | |
| JPH06291236A (en) | Semiconductor device | |
| JP3719921B2 (en) | Semiconductor device and manufacturing method thereof | |
| KR20080002501A (en) | Flip chip type semiconductor package | |
| JPH10303249A (en) | Semiconductor device | |
| JPS63151033A (en) | Manufacture of semiconductor device | |
| JPH1154550A (en) | Semiconductor device and manufacture thereof | |
| JP3637438B2 (en) | Wiring board manufacturing method | |
| JP4016557B2 (en) | Electronic component mounting structure and mounting method | |
| JP2002353601A (en) | Electronic component mounted body and method for mounting electronic component | |
| JP3422613B2 (en) | Component mounting film, conductive paste filling method and component mounting method | |
| JP3472342B2 (en) | Method of manufacturing semiconductor device package | |
| JP3255796B2 (en) | Semiconductor device mounting method | |
| JP3431316B2 (en) | Method for manufacturing semiconductor device and method for mounting semiconductor chip | |
| JPH1131716A (en) | Manufacture of semiconductor device and semiconductor chip | |
| JPH08102464A (en) | Bump electrode structure and its forming method, and connection structure using bump electrode and its connection method | |
| JP2000174066A (en) | Method of mounting semiconductor device | |
| JP3319127B2 (en) | Semiconductor device and manufacturing method thereof | |
| JPH08139138A (en) | Connection method of electronic device | |
| JP4649852B2 (en) | Electronic component joining method and electronic component joining structure | |
| JP2986466B2 (en) | Circuit board flattening method and semiconductor device manufacturing method |