JPH08139138A - Connection method of electronic device - Google Patents
Connection method of electronic deviceInfo
- Publication number
- JPH08139138A JPH08139138A JP6274659A JP27465994A JPH08139138A JP H08139138 A JPH08139138 A JP H08139138A JP 6274659 A JP6274659 A JP 6274659A JP 27465994 A JP27465994 A JP 27465994A JP H08139138 A JPH08139138 A JP H08139138A
- Authority
- JP
- Japan
- Prior art keywords
- conductive particles
- electrode
- electrodes
- electronic component
- semiconductor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ＬＳＩ等の電子部品の
接続方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of connecting electronic parts such as LSI.
【０００２】[0002]
【従来の技術】従来、電子部品を効率よく高精度に接続
する方法としては、ＬＳＩチップの電極に特別な工程に
よってソルダバンブを形成したフリップチップをフェー
スダウンで実装する装置「超音波フリップチップボンダ
ー ＵＦＢ−２−１Ｂ」（超音波工業株式会社）に用い
られているような超音波を併用するものがある。しか
し、このフリップチップを用いた電子部品の接続方法に
は、フリップチップの形成に煩雑な工程が必要であると
いう問題点と、フリップチップの入手が困難で、高価で
あるという問題点がある。2. Description of the Related Art Conventionally, as a method for efficiently and highly accurately connecting electronic components, a device for mounting face-down a flip chip having a solder bump formed on an electrode of an LSI chip by a special process, "Ultrasonic flip chip bonder UFB""-2-1B" (Ultrasonic Industry Co., Ltd.) is used in combination with ultrasonic waves. However, this method of connecting electronic components using a flip chip has a problem that a complicated process is required to form the flip chip and that the flip chip is difficult to obtain and expensive.
【０００３】それに対して、ＬＳＩに特殊な工程を施す
必要のない導電性粒子を用いた電子部品の接続方法があ
る。この導電性粒子を用いた電子回路の接続方法には、
特開昭６３−４７９４３号公報、特開平３−２８９０７
０号公報、及び、「導電性粒子と光硬化性樹脂を用いた
ベアチップフェイスダウンボンディング技術：ＥＬＡＳ
ＴＩＣ」（シャープ、山村 他、ＨＹＢＲＩＤＳ、１９
９２，ｖｏｌ．８，Ｎｏ．６ Ｐ．３〜Ｐ．８）に示さ
れたものがある。On the other hand, there is a method of connecting electronic parts using conductive particles which does not require a special process on the LSI. The electronic circuit connection method using the conductive particles,
JP-A-63-47943, JP-A-3-28907
No. 0, and "Bare chip face-down bonding technology using conductive particles and photocurable resin: ELAS
TIC ”(Sharp, Yamamura et al., HYBRIDS, 19
92, vol. 8, No. 6 P. 3-P. There is one shown in 8).
【０００４】特開昭６３−４７９４３号公報に示された
電子部品の接続方法は、以下に説明するとおりである。
電子部品の電極を接続する基板上の配線パターンの接続
領域にのみ接着剤を塗布する。そして、その基板上に導
電性粒子を絶縁性高分子により被覆したマイクロカプセ
ルを散布した後、接着剤が塗布された接続領域以外の不
要なマイクロカプセルを排除する。その後、電子部品を
位置合わせして、加熱加圧する。このとき、絶縁性高分
子が溶融し、電子部品の電極と導電性粒子とが圧接す
る。そして、絶縁性高分子が冷却し硬化して電子部品を
固定する。これにより、マイクロカプセルの層が、ほぼ
単層、又は多くても２〜３層程度となり、マイクロカプ
セルの導電性粒子の接触抵抗が削減される。The method of connecting electronic components shown in Japanese Patent Laid-Open No. 63-47943 is as described below.
The adhesive is applied only to the connection area of the wiring pattern on the substrate that connects the electrodes of the electronic component. Then, after spraying the microcapsules in which the conductive particles are coated with the insulating polymer on the substrate, unnecessary microcapsules other than the connection region where the adhesive is applied are removed. Then, the electronic components are aligned and heated and pressurized. At this time, the insulating polymer melts, and the electrodes of the electronic component and the conductive particles come into pressure contact with each other. Then, the insulating polymer is cooled and hardened to fix the electronic component. As a result, the layer of the microcapsule becomes almost a single layer, or at most about 2-3 layers, and the contact resistance of the conductive particles of the microcapsule is reduced.
【０００５】次に、特開平３−２８９０７０号公報に示
された電子部品の接続方法は、以下に説明するとおりで
ある。電気回路基体の電極を突出させ、この突出させた
電極に接着剤を塗布する。その後、接着剤を塗布した電
極に導電性粒子を固着する。そして、その電気回路基体
に接続させる電気回路基体を位置合わせした後、絶縁性
接着剤を用いて、圧接、接続する。これにより、高密度
に配列された電極端子を隣接する電極の電気的絶縁を保
ちながら、二つの電気回路基体を接続する。Next, the method of connecting electronic components disclosed in Japanese Patent Laid-Open No. 3-289070 is as described below. The electrodes of the electric circuit substrate are projected, and an adhesive is applied to the projected electrodes. Then, the conductive particles are fixed to the electrode coated with the adhesive. Then, after the electric circuit substrate to be connected to the electric circuit substrate is aligned, it is pressed and connected using an insulating adhesive. As a result, the two electric circuit substrates are connected to each other while maintaining the electrical insulation between the electrode terminals arranged in high density and the adjacent electrodes.
【０００６】さらに、「導電性粒子と光硬化性樹脂を用
いたベアチップフェイスダウンボンディング技術：ＥＬ
ＡＳＴＩＣ」に示された電子部品の接続方法は、以下に
説明するとおりである。ウェハプロセス時に、光硬化樹
脂をウェハ全面に塗布した後、選択的に光を照射して、
電極に樹脂未硬化部分を形成する。この樹脂未硬化部分
に導電性粒子を固着させた後、ウェハをダイシングして
チップを形成する。このチップの電極と基板の電極とを
位置合わせして、チップ固定用の熱硬化併用の光硬化接
着剤を供給する。その後、チップと基板とを加圧し、光
を照射して光硬化接着剤を硬化して、チップと基板とを
圧接して固定する。Furthermore, "Bare chip face-down bonding technology using conductive particles and photocurable resin: EL
The method of connecting the electronic components shown in "ASIC" is as described below. At the time of the wafer process, after applying a photo-curing resin on the entire surface of the wafer, selectively irradiating light,
An uncured resin portion is formed on the electrode. After fixing the conductive particles to the uncured portion of the resin, the wafer is diced to form chips. The electrode of this chip and the electrode of the substrate are aligned with each other, and a photo-curing adhesive that is used in combination with heat for fixing the chip is supplied. After that, the chip and the substrate are pressed, light is irradiated to cure the photo-curing adhesive, and the chip and the substrate are pressed and fixed.
【０００７】[0007]
【発明が解決しようとする課題】ところが、前述の導電
性粒子を用いた電子部品の接続方法では、接着剤を使用
して導電性粒子と電極とが接続されているため、電極と
導電性粒子との接触部が圧接されているだけのメカニカ
ルコンタクトである。そのため、押圧力が弱まると接触
抵抗が大きくなりオープン不良となる危険性がある。そ
のため、接続信頼性に欠けるという問題点がある。However, in the above-described method of connecting electronic parts using conductive particles, since the conductive particles and the electrodes are connected using an adhesive, the electrodes and the conductive particles are connected. It is a mechanical contact whose contact part with is only pressed. Therefore, when the pressing force is weakened, the contact resistance increases and there is a risk of open failure. Therefore, there is a problem that the connection reliability is poor.
【０００８】本発明は、このような問題点に鑑みなされ
たものであり、電極と導電性粒子とによる合金を形成す
ることにより、接続信頼性の高い電子部品の接続方法を
提供することを目的としている。The present invention has been made in view of the above problems, and an object of the present invention is to provide a method of connecting electronic parts having high connection reliability by forming an alloy of electrodes and conductive particles. I am trying.
【０００９】[0009]
【課題を解決するための手段】請求項１記載の発明は、
半導体チップの電極と電子部品の電極との間に導電性粒
子を介在させて超音波と熱とを併用して加圧することに
より前記半導体チップの電極と電子部品の電極とを接合
する。According to the first aspect of the present invention,
The electrodes of the semiconductor chip and the electrodes of the electronic component are bonded by interposing conductive particles between the electrodes of the semiconductor chip and the electrodes of the electronic component and applying pressure by using ultrasonic waves and heat in combination.
【００１０】請求項２記載の発明は、半導体チップ若し
くは電子部品の何れか一方の電極に粒径よりも薄い接着
剤層を用いて導電性粒子を固定する。According to the second aspect of the present invention, the conductive particles are fixed to the electrode of either the semiconductor chip or the electronic component by using an adhesive layer having a smaller particle diameter.
【００１１】請求項３記載の発明は、導電性粒子の粒径
を半導体チップ又は電子部品の電極の大きさに対して１
／３から１．５倍の大きさとする。According to a third aspect of the invention, the particle size of the conductive particles is set to 1 with respect to the size of the electrodes of the semiconductor chip or the electronic component.
/ 3 to 1.5 times the size.
【００１２】請求項４記載の発明は、導電性粒子を弾性
体とする。According to a fourth aspect of the invention, the conductive particles are elastic bodies.
【００１３】請求項５記載の発明は、半導体チップ側及
び電子部品側のそれぞれから振動方向の異なる超音波を
加振する。According to a fifth aspect of the present invention, ultrasonic waves having different vibration directions are applied from the semiconductor chip side and the electronic component side, respectively.
【００１４】[0014]
【作用】請求項１記載の発明においては、半導体チップ
の電極と電子部品の電極との間に導電性粒子を介在させ
て超音波と熱とを併用して加圧することにより、導電性
粒子と電極との接点において拡散が生じて合金形成が行
なわれるため、接続信頼性が向上する。According to the first aspect of the present invention, conductive particles are interposed between the electrode of the semiconductor chip and the electrode of the electronic component, and the ultrasonic wave and the heat are used in combination to apply pressure to the conductive particles. Since diffusion occurs at the contact point with the electrode to form an alloy, the connection reliability is improved.
【００１５】請求項２記載の発明においては、導電性粒
子が一方の電極に固定されているため、位置合わせ作業
が容易に行なえ、接着剤層により導電性粒子が固定され
ていない電極側の接点では超音波エネルギーが集中して
超音波接合効率が上がる。According to the second aspect of the invention, since the conductive particles are fixed to one of the electrodes, the alignment work can be easily performed, and the contact on the electrode side where the conductive particles are not fixed by the adhesive layer. Then, ultrasonic energy is concentrated and ultrasonic welding efficiency is increased.
【００１６】請求項３記載の発明においては、導電性粒
子の粒径を半導体チップ又は電子部品の電極の大きさに
対して１／３から１．５倍の大きさとすることにより、
導電粒子と電極との接点に形成された合金結合の面積を
広くとることができるため、抵抗が低く抑えられる。According to the third aspect of the present invention, the particle size of the conductive particles is set to 1/3 to 1.5 times the size of the electrode of the semiconductor chip or the electronic component.
Since the area of the alloy bond formed at the contact point between the conductive particles and the electrode can be increased, the resistance can be suppressed low.
【００１７】請求項４記載の発明においては、導電性粒
子を弾性体とすることにより、接続時の加圧による垂直
方向の荷重で粒子がつぶれるため、超音波接合効率及び
歩留まりが向上し、さらに、実装後の熱歪みが許容され
る。In the invention according to claim 4, since the conductive particles are made of an elastic body, the particles are crushed by a load in the vertical direction due to the pressure at the time of connection, so that the ultrasonic bonding efficiency and the yield are improved. , Thermal strain after mounting is allowed.
【００１８】請求項５記載の発明においては、半導体チ
ップ側及び電子部品側のそれぞれから振動方向の異なる
超音波を加振することにより、導電性粒子と電極とが一
方向のみの相対振動でなく、導電性粒子と電極との界面
の平面内で多方向の相対振動となるため、半導体側及び
基板側の両方で超音波接合効率が向上される。According to the invention of claim 5, by applying ultrasonic waves having different vibration directions from the semiconductor chip side and the electronic component side respectively, the conductive particles and the electrodes are not subjected to relative vibration in only one direction. Since relative vibrations in multiple directions occur in the plane of the interface between the conductive particles and the electrodes, ultrasonic bonding efficiency is improved on both the semiconductor side and the substrate side.
【００１９】[0019]
【実施例】請求項１及び３記載の発明の一実施例を図１
ないし図３に基づいて説明する。図１に示すように、ヒ
ーター１上には電子部品である基板２が載置されてい
る。この基板２には電極３が形成されている。また、円
筒形の吸着コレット４により上方向（矢印ｙ方向）に吸
引されて、半導体チップであるＬＳＩ５がホールドされ
ている。このＬＳＩ５には電極６が形成されている。そ
して、前記電極３と電極６とにより導電性粒子７が挟持
されている。この導電性粒子７は、マスク等を利用して
配置されている。前記電極３，６及び前記導電性粒子７
は、ほぼ同一の大きさである。つまり、前記導電性粒子
７の粒径は、前記電極３，６の大きさに対して１／３か
ら１．５倍の範囲内の大きさである。このとき、図３に
示すように、前記基板２と前記ＬＳＩ５とが位置合わせ
されて、前記電極６と前記電極３との間で前記導電性粒
子７が圧接されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the invention described in claims 1 and 3 is shown in FIG.
Or, it demonstrates based on FIG. As shown in FIG. 1, a substrate 2, which is an electronic component, is placed on the heater 1. An electrode 3 is formed on the substrate 2. The cylindrical suction collet 4 is sucked in the upward direction (arrow y direction) to hold the LSI 5 which is a semiconductor chip. Electrodes 6 are formed on the LSI 5. The conductive particles 7 are sandwiched between the electrodes 3 and 6. The conductive particles 7 are arranged using a mask or the like. The electrodes 3, 6 and the conductive particles 7
Are approximately the same size. That is, the particle size of the conductive particles 7 is within the range of 1/3 to 1.5 times the size of the electrodes 3 and 6. At this time, as shown in FIG. 3, the substrate 2 and the LSI 5 are aligned with each other, and the conductive particles 7 are pressed against each other between the electrode 6 and the electrode 3.
【００２０】ここで、導電性粒子の粒径を半導体チップ
又は電子部品の電極の大きさに対して１／３から１．５
倍の大きさとしたことについて説明する。通常使用され
るＬＳＩは、電極が１００μｍ四方の大きさであり、電
極のライン幅とスペース幅とが同等にデザインされてい
る。また、通常使用される導電性粒子は、市販の異方性
導電膜等でよく使用されているように、粒径が１０μｍ
のものである。そこで、通常使用される導電性粒子より
も１レベル大きい導電性粒子を最小のものとした。この
１レベル大きい導電性粒子の粒径が３０μｍ（約１／
３）である。しかし、電極のライン幅とスペース幅とが
同等にデザインされているため、電極の大きさに対して
導電性粒子の粒径が２倍以上あり、その導電性粒子が一
列に並んだとき、粒子同士が接触するおそれがある。そ
こで、粒径の上限値を電極の大きさの２倍よりも小さな
値、例えば、中間値１．５倍に限定した。そして、これ
は、電極の大きさに対して従来使用されていた導電性粒
子よりも粒径の大きい導電性粒子を用いることを表わし
ている。Here, the particle size of the conductive particles is 1/3 to 1.5 with respect to the size of the electrode of the semiconductor chip or the electronic component.
The reason why the size is doubled will be described. In a commonly used LSI, the electrodes have a size of 100 μm square, and the line width and the space width of the electrodes are designed to be equal. In addition, the conductive particles that are usually used have a particle size of 10 μm, as is often used in commercially available anisotropic conductive films and the like.
belongs to. Therefore, the conductive particles that are one level larger than the conductive particles that are normally used are made the minimum. The particle size of the conductive particles that is one level larger is 30 μm (about 1 /
3). However, since the line width and the space width of the electrode are designed to be equal, the particle size of the conductive particles is more than twice the size of the electrode, and when the conductive particles are arranged in a line, There is a risk of mutual contact. Therefore, the upper limit of the particle size is limited to a value smaller than twice the size of the electrode, for example, an intermediate value of 1.5 times. And, this means that the conductive particles having a larger particle size than the conventionally used conductive particles are used for the size of the electrode.
【００２１】このように導電性粒子７を電極３と電極６
との間で圧接した後、吸着コレット４を通じて水平方向
（ｘ方向）の超音波を電極３，６及び導電性粒子７に加
振する。このとき、同時にヒーター１により電極３，６
及び導電性粒子７を加熱する。これにより、導電性粒子
７と各電極３，６との接点において、拡散が生じて合金
形成が進み、接合部８が形成されて接合が完成する。こ
の時、図２に示すように、導電性粒子７と各電極３，６
との接点に合金接合部分９が形成される。そのため、接
続信頼性が向上する。また、導電性粒子７の粒径を電極
３，６の大きさとほぼ同一の大きさとする。これによ
り、導電性粒子７と各電極３，６との接点に形成された
合金接合部分９の面積を広くとることができる。そのた
め、抵抗が低く抑えられる。In this way, the conductive particles 7 are applied to the electrode 3 and the electrode 6.
After pressure-contacting between them, ultrasonic waves in the horizontal direction (x direction) are applied to the electrodes 3 and 6 and the conductive particles 7 through the adsorption collet 4. At this time, at the same time, the electrodes 3 and 6 are simultaneously heated by the heater 1.
And, the conductive particles 7 are heated. As a result, diffusion occurs at the contact points between the conductive particles 7 and each of the electrodes 3 and 6, alloy formation proceeds, and the joint portion 8 is formed to complete the joint. At this time, as shown in FIG. 2, the conductive particles 7 and the electrodes 3, 6
An alloy joint portion 9 is formed at the contact point with. Therefore, the connection reliability is improved. The particle size of the conductive particles 7 is set to be substantially the same as the size of the electrodes 3 and 6. Thereby, the area of the alloy joint portion 9 formed at the contact point between the conductive particles 7 and each of the electrodes 3 and 6 can be increased. Therefore, the resistance can be suppressed low.
【００２２】請求項２記載の発明の一実施例を図４ない
し図６に基づいて説明する。前述の実施例において説明
した部分と同一部分については、同一符号を用いて表わ
し、その説明は省略する。図４に示すように、ＬＳＩ５
上に導電性粒子７の粒径よりも薄く層状に接着剤として
紫外線硬化樹脂１０を塗布した後、導電性粒子７を電極
６に押圧しながら紫外線硬化樹脂１０を硬化させる。こ
れにより、図６に示すように、導電性粒子７と電極６と
がメカニカルコンタクトされた状態になる。このＬＳＩ
５を前述の実施例と同様に吸着コレット４によりホール
ドさせ、導電性粒子７をヒーター１上の基板２の電極３
に圧接させる。このときの基板２、ＬＳＩ５、及び、導
電性粒子７の様子を図５に示す。An embodiment of the invention described in claim 2 will be described with reference to FIGS. 4 to 6. The same parts as those described in the above-mentioned embodiment are denoted by the same reference numerals, and the description thereof will be omitted. As shown in FIG.
After the ultraviolet curable resin 10 is applied as an adhesive on the upper side in a layer thickness smaller than the particle size of the conductive particles 7, the ultraviolet curable resin 10 is cured while pressing the conductive particles 7 against the electrodes 6. As a result, as shown in FIG. 6, the conductive particles 7 and the electrodes 6 are brought into mechanical contact with each other. This LSI
5 is held by the adsorption collet 4 in the same manner as in the above-mentioned embodiment, and the conductive particles 7 are placed on the electrode 3 of the substrate 2 on the heater 1.
Press against. The state of the substrate 2, the LSI 5, and the conductive particles 7 at this time is shown in FIG.
【００２３】このように、導電性粒子７を紫外線硬化樹
脂１０により電極６に固定した後、電極３と導電性粒子
７とを圧接させて、電極３と電極６と導電性粒子７とに
超音波と熱とを加える。これにより、導電性粒子７と電
極３との接点に超音波エネルギーが集中して合金形成が
行なわれる。そのため、接続信頼性が向上する。また、
導電性粒子７と各電極３，６との位置合わせ作業が容易
に行なえる。さらに、導電性粒子７と電極３との接点に
おいて、超音波接合効率が上がる。そのうえ、導電性粒
子７と電極６とのメカニカルコンタクトが不十分な箇所
が合っても、超音波エネルギーにより合金形成が行なわ
れて十分なコンタクトが得られる。After fixing the conductive particles 7 to the electrode 6 with the ultraviolet curable resin 10 as described above, the electrode 3 and the conductive particle 7 are brought into pressure contact with each other so that the electrode 3, the electrode 6 and the conductive particle 7 are superposed. Add sound waves and heat. As a result, ultrasonic energy is concentrated on the contact points between the conductive particles 7 and the electrodes 3 to form an alloy. Therefore, the connection reliability is improved. Also,
Positioning work of the conductive particles 7 and the electrodes 3 and 6 can be easily performed. Further, the ultrasonic bonding efficiency is increased at the contact point between the conductive particles 7 and the electrode 3. Moreover, even if the mechanical contact between the conductive particles 7 and the electrode 6 is insufficient, an alloy is formed by ultrasonic energy to obtain a sufficient contact.
【００２４】請求項４記載の発明の一実施例を図７に基
づいて説明する。本実施例では、導電性粒子７として、
弾性体である弾性導電粒子１１を用いる。そして、弾性
導電粒子１１を電極３と電極６とにより圧接した後、電
極３と電極６と弾性導電粒子１１とに超音波と熱とを加
える。これにより、吸着コレット４にホールドされたＬ
ＳＩ５の電極６とヒーター１上に載置された基板２の電
極３とにより圧接された弾性導電粒子１１は、垂直方向
（Ｙ方向）に押圧され、潰されて水平方向へ広がる。そ
して、弾性導電粒子１１の反発力により、弾性導電粒子
１１と各電極３，６との接点には、安定した押圧力が加
わる。そのため、超音波接合効率及び歩留まりが向上す
る。さらに、実装後の熱歪みも許容される。An embodiment of the invention described in claim 4 will be described with reference to FIG. In this example, as the conductive particles 7,
The elastic conductive particles 11 that are elastic bodies are used. Then, after the elastic conductive particles 11 are pressed against each other by the electrodes 3 and 6, ultrasonic waves and heat are applied to the electrodes 3, 6 and the elastic conductive particles 11. As a result, L held in the suction collet 4
The elastic conductive particles 11 pressed by the electrode 6 of SI5 and the electrode 3 of the substrate 2 placed on the heater 1 are pressed in the vertical direction (Y direction), crushed, and spread in the horizontal direction. Then, due to the repulsive force of the elastic conductive particles 11, a stable pressing force is applied to the contact points between the elastic conductive particles 11 and the electrodes 3 and 6. Therefore, ultrasonic bonding efficiency and yield are improved. Furthermore, thermal strain after mounting is also allowed.
【００２５】請求項５記載の発明の一実施例を図８に基
づいて説明する。本実施例では、導電性粒子７を電極３
と電極６とにより圧接した後、一定の水平方向（Ｘ方
向）の超音波をＬＳＩ５側から電極３，６及び導電性粒
子７に加振するとともに、異なる水平方向（Ｚ方向）の
超音波を基板２側から電極３，６及び導電性粒子７に加
振する。このとき、同時にヒーター１により電極３，６
及び導電性粒子７を加熱する。これにより、導電性粒子
７と各電極３，６とが一方向のみの相対振動でなく、導
電性粒子７と各電極３，６との接点において、多方向の
相対振動となるため、導電性粒子７と各電極３，６との
接点における超音波接合効率が向上される。An embodiment of the invention described in claim 5 will be described with reference to FIG. In this embodiment, the conductive particles 7 are connected to the electrode 3
After pressure contact with the electrode 6 and the electrode 6, a constant horizontal direction (X direction) ultrasonic wave is applied to the electrodes 3 and 6 and the conductive particles 7 from the LSI 5 side, and a different horizontal direction (Z direction) ultrasonic wave is generated. The electrodes 3 and 6 and the conductive particles 7 are vibrated from the substrate 2 side. At this time, at the same time, the electrodes 3 and 6 are simultaneously heated by the heater 1.
And, the conductive particles 7 are heated. As a result, the conductive particles 7 and the electrodes 3 and 6 do not have relative vibrations in only one direction, but have multidirectional relative vibrations at the contact points between the conductive particles 7 and the electrodes 3 and 6. The ultrasonic bonding efficiency at the contact point between the particle 7 and each electrode 3, 6 is improved.
【００２６】[0026]
【発明の効果】請求項１記載の発明は、半導体チップの
電極と電子部品の電極との間に導電性粒子を介在させて
超音波と熱とを併用して加圧することにより、導電性粒
子と電極との接点において拡散が生じて合金形成が行な
われるため、接続信頼性を向上させることができる。According to the first aspect of the present invention, the conductive particles are interposed between the electrode of the semiconductor chip and the electrode of the electronic component, and the conductive particles are pressurized by using ultrasonic waves and heat in combination. Since diffusion occurs at the contact between the electrode and the electrode to form an alloy, the connection reliability can be improved.
【００２７】請求項２記載の発明は、導電性粒子が一方
の電極に固定してあるため、位置合わせ作業を容易に行
なうことができ、接着剤層により導電性粒子が固定され
ていない電極側の接点では超音波エネルギーが集中して
超音波接合効率を上げることができて、さらに、接着剤
層により導電性粒子が固定されている電極側の接点でも
合金形成が期待される。According to the second aspect of the present invention, since the conductive particles are fixed to one of the electrodes, the alignment work can be easily performed, and the conductive particles are not fixed by the adhesive layer on the electrode side. At the contact point, ultrasonic energy can be concentrated to improve the ultrasonic bonding efficiency, and further, alloy formation is expected at the contact point on the electrode side where the conductive particles are fixed by the adhesive layer.
【００２８】請求項３記載の発明は、導電性粒子の粒径
を半導体チップ又は電子部品の電極の大きさに対して１
／３から１．５倍の大きさとすることにより、導電粒子
と電極との接点に形成された合金結合の面積を広くとる
ことができるため、抵抗を低く抑えることができる。According to a third aspect of the invention, the particle size of the conductive particles is set to 1 with respect to the size of the electrodes of the semiconductor chip or the electronic component.
By setting the size from ⅓ to 1.5 times, the area of the alloy bond formed at the contact point between the conductive particles and the electrode can be widened, so that the resistance can be suppressed low.
【００２９】請求項４記載の発明は、導電性粒子を弾性
体とすることにより、接続時の加圧による垂直方向の荷
重で粒子がつぶれるため、超音波接合効率及び歩留まり
を向上させることができ、実装後の熱歪みを許容するこ
とができる。In the invention according to claim 4, since the conductive particles are made of an elastic body, the particles are crushed by a load in the vertical direction due to the pressure applied at the time of connection, so that the ultrasonic bonding efficiency and the yield can be improved. The thermal strain after mounting can be tolerated.
【００３０】請求項５記載の発明は、半導体チップ側及
び電子部品側のそれぞれから振動方向の異なる超音波を
加振することにより、導電性粒子と電極とが一方向のみ
の相対振動でなく、導電性粒子と電極との界面の平面内
で多方向の相対振動となるため、半導体側及び基板側の
両方で超音波接合効率を向上させることができる。According to a fifth aspect of the present invention, by applying ultrasonic waves having different vibration directions from the semiconductor chip side and the electronic component side, respectively, the conductive particles and the electrodes are not subjected to relative vibration in only one direction, Since multi-directional relative vibration occurs in the plane of the interface between the conductive particles and the electrode, ultrasonic bonding efficiency can be improved on both the semiconductor side and the substrate side.
【図１】請求項１及び３記載の発明の一実施例を示す電
子部品の接続方法を用いた接続装置の側面図である。FIG. 1 is a side view of a connection device using a method for connecting electronic components, showing an embodiment of the invention described in claims 1 and 3. FIG.
【図２】その電子部品の接続方法により接続された電子
部品の接続部分の側面図である。FIG. 2 is a side view of a connecting portion of electronic components connected by the electronic component connecting method.
【図３】その電子部品の接続方法による接続工程中の電
子部品の接続部分の側面図である。FIG. 3 is a side view of a connecting portion of the electronic component during a connecting step according to the method of connecting the electronic component.
【図４】請求項２記載の発明の一実施例を示す電子部品
の接続方法による接続工程中の一工程における電子部品
の側面図である。FIG. 4 is a side view of the electronic component in one step of the connecting steps by the method of connecting electronic components according to the second embodiment of the invention.
【図５】その電子部品の接続方法による接続工程中の他
の工程における電子部品の接続部分の側面図である。FIG. 5 is a side view of a connecting portion of an electronic component in another step of the connecting steps according to the electronic component connecting method.
【図６】その時の導電性粒子とＬＳＩの電極との接点の
側面図である。FIG. 6 is a side view of a contact point between conductive particles and an electrode of an LSI at that time.
【図７】請求項４記載の発明の一実施例を示す電子部品
の接続方法による接続工程中の電子部品の接続部分の側
面図である。FIG. 7 is a side view of a connecting portion of an electronic component during a connecting step by a method of connecting an electronic component, showing an embodiment of the invention described in claim 4;
【図８】請求項５記載の発明の一実施例を示す電子部品
の接続方法による接続工程中の電子部品の接続部分の側
面図である。FIG. 8 is a side view of a connecting portion of an electronic component during a connecting step by a method of connecting an electronic component showing an embodiment of the invention according to claim 5;
２ 電子部品 ３ 電子部品の電極 ５ 半導体チップ ６ 半導体チップの電極 ７ 導電性粒子 １０ 接着剤 １１ 弾性体 2 Electronic Components 3 Electrodes for Electronic Components 5 Semiconductor Chips 6 Electrodes for Semiconductor Chips 7 Conductive Particles 10 Adhesives 11 Elastic Body
───────────────────────────────────────────────────── フロントページの続き (72)発明者 桑崎 聡 東京都大田区中馬込１丁目３番６号 株式 会社リコ−内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Satoshi Kuwazaki 1-3-6 Nakamagome, Ota-ku, Tokyo Inside Riko Co., Ltd.
Claims (5)
の間に導電性粒子を介在させて超音波と熱とを併用して
加圧することにより前記半導体チップの電極と電子部品
の電極とを接合したことを特徴とする電子部品の接続方
法。1. An electrode of a semiconductor chip and an electrode of an electronic component are produced by interposing conductive particles between the electrode of the semiconductor chip and the electrode of an electronic component to apply pressure by using ultrasonic waves and heat in combination. A method for connecting electronic parts, which is characterized by being joined.
の電極に粒径よりも薄い接着剤層を用いて導電性粒子を
固定したことを特徴とする請求項１記載の電子部品の接
続方法。2. The method of connecting electronic components according to claim 1, wherein the conductive particles are fixed to one of the electrodes of the semiconductor chip or the electronic component by using an adhesive layer having a particle diameter smaller than the particle diameter.
子部品の電極の大きさに対して１／３から１．５倍の大
きさであることを特徴とする請求項１又は２記載の電子
部品の接続方法。3. The particle size of the conductive particles is 1/3 to 1.5 times as large as the size of the electrode of the semiconductor chip or the electronic component. How to connect electronic components.
する請求項１，２又は３記載の電子部品の接続方法。4. The method for connecting electronic components according to claim 1, wherein the conductive particles are elastic bodies.
れから振動方向の異なる超音波を加振したことを特徴と
する請求項１，２，３又は４記載の電子部品の接続方
法。5. The method for connecting electronic components according to claim 1, wherein ultrasonic waves having different vibration directions are applied from the semiconductor chip side and the electronic component side, respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6274659A JPH08139138A (en) | 1994-11-09 | 1994-11-09 | Connection method of electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6274659A JPH08139138A (en) | 1994-11-09 | 1994-11-09 | Connection method of electronic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08139138A true JPH08139138A (en) | 1996-05-31 |
Family
ID=17544774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6274659A Pending JPH08139138A (en) | 1994-11-09 | 1994-11-09 | Connection method of electronic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08139138A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6718604B1 (en) | 1999-06-22 | 2004-04-13 | Murata Manufacturing Co., Ltd. | Mounting method for electronic device elements |
| JP2009060147A (en) * | 2008-12-15 | 2009-03-19 | Panasonic Corp | Component mounting method |
| JP2009071330A (en) * | 2008-12-15 | 2009-04-02 | Panasonic Corp | Component mounting device |
-
1994
- 1994-11-09 JP JP6274659A patent/JPH08139138A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6718604B1 (en) | 1999-06-22 | 2004-04-13 | Murata Manufacturing Co., Ltd. | Mounting method for electronic device elements |
| JP2009060147A (en) * | 2008-12-15 | 2009-03-19 | Panasonic Corp | Component mounting method |
| JP2009071330A (en) * | 2008-12-15 | 2009-04-02 | Panasonic Corp | Component mounting device |
| JP4613998B2 (en) * | 2008-12-15 | 2011-01-19 | パナソニック株式会社 | Component mounting apparatus and component mounting method |
| JP4720901B2 (en) * | 2008-12-15 | 2011-07-13 | パナソニック株式会社 | Component mounting method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2833326B2 (en) | Electronic component mounted connector and method of manufacturing the same | |
| JP3225062B2 (en) | Thermosetting resin sheet and semiconductor element mounting method using the same | |
| JP3914431B2 (en) | Manufacturing method of semiconductor device | |
| JP2001015553A (en) | Manufacture of semiconductor device | |
| JPH1126922A (en) | Method for mounting chip | |
| JP3269390B2 (en) | Semiconductor device | |
| JP2002118147A (en) | Method of mounting semiconductor chip to printed circuit board, and mounting sheet used for embodying the method | |
| KR20040014166A (en) | Method of connecting circuit devices and corresponding assembly of circuit device | |
| JPH08139138A (en) | Connection method of electronic device | |
| US20020072151A1 (en) | Method of producing mounting structure and mounting structure produced by the same | |
| JP2002026071A (en) | Semiconductor device and its manufacturing method, circuit board, and electronic equipment | |
| JP4195541B2 (en) | Method of mounting a semiconductor chip on a printed circuit board and mounting sheet used for carrying out the method | |
| JP4441090B2 (en) | Method of mounting a semiconductor chip on a printed wiring board | |
| JP3419398B2 (en) | Method for manufacturing semiconductor device | |
| JP2002353601A (en) | Electronic component mounted body and method for mounting electronic component | |
| JP2959215B2 (en) | Electronic component and its mounting method | |
| JP4295517B2 (en) | Semiconductor chip mounting structure and semiconductor chip mounting method | |
| JP2002289644A (en) | Method for joining semiconductor element and joining apparatus | |
| JP2004128259A (en) | Joint structure and electronic equipment equipped with the same | |
| JPH1140607A (en) | Manufacture of semiconductor device and sealing member | |
| JPH0737934A (en) | Mounting method for flip chip | |
| JP2002076208A (en) | Packaging structure of semiconductor device and display of structure and its manufacturing method | |
| JPH0714966A (en) | Multi-terminal composite lead frame and manufacture thereof | |
| JPH10125730A (en) | Mounted structure and manufacturing method thereof | |
| JPH07263490A (en) | Flip chip and microbonding method |