JPH11191616A - 不揮発性半導体メモリ装置の改善されたウェル構造及びその製造方法 - Google Patents

不揮発性半導体メモリ装置の改善されたウェル構造及びその製造方法

Info

Publication number
JPH11191616A
JPH11191616A JP10272085A JP27208598A JPH11191616A JP H11191616 A JPH11191616 A JP H11191616A JP 10272085 A JP10272085 A JP 10272085A JP 27208598 A JP27208598 A JP 27208598A JP H11191616 A JPH11191616 A JP H11191616A
Authority
JP
Japan
Prior art keywords
well
cell
type
region
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP10272085A
Other languages
English (en)
Japanese (ja)
Inventor
Tokei Ri
東 圭 李
Keon-Soo Kim
建 秀 金
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JPH11191616A publication Critical patent/JPH11191616A/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP10272085A 1997-12-22 1998-09-25 不揮発性半導体メモリ装置の改善されたウェル構造及びその製造方法 Withdrawn JPH11191616A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019970071935A KR100273705B1 (ko) 1997-12-22 1997-12-22 불휘발성반도체메모리장치의웰구조및그에따른제조방법
KR97P71935 1997-12-22

Publications (1)

Publication Number Publication Date
JPH11191616A true JPH11191616A (ja) 1999-07-13

Family

ID=19528164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10272085A Withdrawn JPH11191616A (ja) 1997-12-22 1998-09-25 不揮発性半導体メモリ装置の改善されたウェル構造及びその製造方法

Country Status (2)

Country Link
JP (1) JPH11191616A (ko)
KR (1) KR100273705B1 (ko)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005051191A (ja) * 2003-03-20 2005-02-24 Ricoh Co Ltd 複数種類のウエルを備えた半導体装置とその製造方法
JP2006054435A (ja) * 2004-08-13 2006-02-23 Infineon Technologies Ag 集積メモリデバイスおよびその製造方法
JP2010177684A (ja) * 2003-03-20 2010-08-12 Ricoh Co Ltd 複数種類のウエルを備えた半導体装置
US8487383B2 (en) 2009-12-15 2013-07-16 Samsung Electronics Co., Ltd. Flash memory device having triple well structure

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100480894B1 (ko) * 2002-11-11 2005-04-07 매그나칩 반도체 유한회사 복합 반도체 장치의 제조방법
KR100870383B1 (ko) * 2006-05-29 2008-11-25 주식회사 하이닉스반도체 낸드 플래시 메모리 소자의 제조방법
KR100875071B1 (ko) 2007-04-25 2008-12-18 주식회사 하이닉스반도체 플래시 메모리 소자의 제조 방법
KR101585616B1 (ko) 2009-12-16 2016-01-15 삼성전자주식회사 반도체 장치 및 그 제조 방법
CN108039350B (zh) * 2017-11-30 2020-09-01 上海华力微电子有限公司 改善闪存中高压器件栅极氧化层可靠性的工艺集成方法
KR20220164852A (ko) 2021-06-04 2022-12-14 삼성전자주식회사 반도체 장치

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4403520C2 (de) * 1994-02-04 2002-04-25 Gold Star Electronics Flash-EEPROM mit Dreifachwannen-CMOS-Struktur

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005051191A (ja) * 2003-03-20 2005-02-24 Ricoh Co Ltd 複数種類のウエルを備えた半導体装置とその製造方法
JP4508606B2 (ja) * 2003-03-20 2010-07-21 株式会社リコー 複数種類のウエルを備えた半導体装置の製造方法
JP2010177684A (ja) * 2003-03-20 2010-08-12 Ricoh Co Ltd 複数種類のウエルを備えた半導体装置
JP2006054435A (ja) * 2004-08-13 2006-02-23 Infineon Technologies Ag 集積メモリデバイスおよびその製造方法
US8288813B2 (en) 2004-08-13 2012-10-16 Infineon Technologies Ag Integrated memory device having columns having multiple bit lines
US8487383B2 (en) 2009-12-15 2013-07-16 Samsung Electronics Co., Ltd. Flash memory device having triple well structure

Also Published As

Publication number Publication date
KR100273705B1 (ko) 2000-12-15
KR19990052461A (ko) 1999-07-05

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Effective date: 20060110