JPH108243A - Production of low permeability sputtering cobalt base target material for magnetic recording medium - Google Patents
Production of low permeability sputtering cobalt base target material for magnetic recording mediumInfo
- Publication number
- JPH108243A JPH108243A JP16347596A JP16347596A JPH108243A JP H108243 A JPH108243 A JP H108243A JP 16347596 A JP16347596 A JP 16347596A JP 16347596 A JP16347596 A JP 16347596A JP H108243 A JPH108243 A JP H108243A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- target material
- sputtering
- permeability
- magnetic permeability
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Powder Metallurgy (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、主として磁気記録
媒体用スパッタリングターゲット材の製造方法に関し、
特に低透磁率のスパッタリングＣｏ系ターゲット材の製
造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a sputtering target material for a magnetic recording medium.
In particular, the present invention relates to a method for producing a sputtering Co-based target material having low magnetic permeability.
【０００２】[0002]
【従来の技術】従来、電子機器材料の分野のなかでもコ
ンピューターのハードディスクなどの磁気記録媒体用薄
膜の需要は急激な増加の傾向にあり、使用される薄膜の
記録密度もますます高密度化しつつあり、Ｃｏ−Ｃｒ系
合金に加えてＣｏ−Ｃｒ−Ｔａ系合金、Ｃｏ−Ｐｔ系合
金およびＣｏ−Ｃｒ−Ｐｔ系合金薄膜が使用されつつあ
る。このような磁気記録媒体用薄膜の作製には、主とし
てスパッタリング工法が用いられている。このスパッタ
リングに使用されるターゲット材は、従来鋳造、鋳造→
圧延等の工法により成形され、切り出した後、所望の形
状および表面状態に機械加工をし、また必要に応じてバ
ッキングプレートにインジウムなどでろう付けして完成
品とされる。2. Description of the Related Art In the field of electronic device materials, the demand for thin films for magnetic recording media such as computer hard disks has been increasing rapidly, and the recording density of thin films used has been increasing. In addition, Co-Cr-Ta alloys, Co-Pt alloys, and Co-Cr-Pt alloy thin films are being used in addition to Co-Cr alloys. For manufacturing such a thin film for a magnetic recording medium, a sputtering method is mainly used. The target material used for this sputtering is conventionally casting, casting →
After being formed by a method such as rolling and then cut out, it is machined into a desired shape and surface state, and if necessary, brazed to a backing plate with indium or the like to obtain a finished product.
【０００３】さらに、一部には粉末冶金法によっても均
一性に優れた高品位のスパッタリングターゲット材の製
造が試みられている。このようなスパッタリングによる
磁気記録媒体用薄膜の製造においては、工業的にはマグ
ネトロン方式のスパッタリング装置が主として使用さ
れ、そのスパッタリング効果を高め、低コストでの薄膜
製造を目的として、スパッタリングターゲット材の低透
磁率化への試みが種々行われてきている。[0003] Further, some attempts have been made to produce high-quality sputtering target materials having excellent uniformity even by powder metallurgy. In the production of a thin film for a magnetic recording medium by such sputtering, a magnetron type sputtering apparatus is mainly used industrially, and the sputtering target material is reduced for the purpose of enhancing the sputtering effect and producing the thin film at low cost. Various attempts have been made to increase the magnetic permeability.
【０００４】[0004]
【発明が解決しようとする課題】この透磁率の低いター
ゲット材の製造には、目的組成の合金の溶解時に、低透
磁率化を達成するために、主成分以外の元素を添加させ
る方法があるが、スパッタリングにより作製した薄膜の
本質的な特性であるところの記録および再生特性に対し
て好影響を与えることなく、劣化させる可能性を含んで
いることから望ましくない。In the production of a target material having a low magnetic permeability, there is a method in which an element other than the main component is added in order to achieve a low magnetic permeability when an alloy having a desired composition is melted. However, this is not desirable because it involves the possibility of deteriorating without having a favorable effect on the recording and reproduction characteristics, which are essential characteristics of the thin film produced by sputtering.
【０００５】これに対してターゲット材に冷間加工時あ
るいは熱間加工時に機械的に歪みを加え、透磁率の低減
を行うという方法は、薄膜の磁気特性を劣化させること
なく有効であるが、鋳造法で作製した鋳塊から切り出し
たターゲット材はその凝固時に生じる凝固偏析を避ける
ことができず、プレス機などにより機械的な歪みを加え
る際には成分の不均一に起因するところの機械的強度の
劣化に基づく割れなどの問題点を生じ易い。On the other hand, a method of mechanically applying strain to a target material during cold working or hot working to reduce the magnetic permeability is effective without deteriorating the magnetic properties of the thin film. The target material cut from the ingot produced by the casting method cannot avoid solidification segregation that occurs at the time of solidification, and when mechanical strain is applied by a press machine etc., mechanical properties caused by non-uniform components Problems such as cracks due to deterioration in strength are likely to occur.
【０００６】さらにはターゲット材に与える歪み量のコ
ントロールは難しく、工業的に安定かつ容易な方法とは
言えがたい。この不均一な歪みの導入はろう付け時の際
の加熱時あるいはスパッタリング中にターゲットに加わ
る熱により、ターゲット本体に反りなどの機械的な寸法
変化を生じさせるなどの問題点がある。本発明はこのよ
うな状況の下でなされたものであって、その目的とする
ところは、従来技術に見られる種々の問題点を発生させ
ることなく、高性能な薄膜の作製を可能にする低透磁率
ターゲットの作製の実現を提供することにある。Further, it is difficult to control the amount of strain applied to the target material, and it is not industrially stable and easy. The introduction of the non-uniform distortion has a problem that the target body undergoes mechanical dimensional change such as warpage due to heat applied to the target during heating during brazing or during sputtering. The present invention has been made under such a circumstance, and an object of the present invention is to provide a low-performance thin film capable of producing a high-performance thin film without causing various problems found in the prior art. It is an object of the present invention to provide a realization of a permeability target.
【０００７】[0007]
【課題を解決するための手段】上記の問題点を解決した
本発明の方法の要旨とするところは、Ｃｏ−Ｃｒ−Ｔａ
系合金のガスアトマイズ粉末を金属製の容器に充填・封
入し、これを加圧圧縮用金型内で高温高圧プレスして固
化成形した後、容器を除去し該合金成形材部分を取り出
し、８００℃〜１２５０℃の温度範囲で低透磁率化のた
めの熱処理を行い、冷却し、所定の形状に機械加工する
ことを特徴とするもので、この方法は従来の機械的に歪
みを導入する方法とは異なり、特に熱処理により金属組
織学的に構成相をコントロールすることにより低透磁率
化を実現することを特徴とするものである。SUMMARY OF THE INVENTION The gist of the method of the present invention which has solved the above problems is that of Co-Cr-Ta.
The gas atomized powder of the base alloy is filled and sealed in a metal container, and this is solidified and formed by high-temperature and high-pressure pressing in a press and compression mold. Then, the container is removed and the alloy molding material portion is taken out. It is characterized by performing a heat treatment for lowering the magnetic permeability in a temperature range of ~ 1250 ° C, cooling, and machining into a predetermined shape. This method is different from a conventional method of introducing mechanical strain. In contrast, the present invention is characterized by realizing a low magnetic permeability by controlling the constituent phases in a metallographic manner by heat treatment.
【０００８】[0008]
【発明の実施の形態】本発明における熱処理によるター
ゲット材の低透磁率化は、所望の熱処理中にＣｏＣｒ相
つまりσ相が析出するとともに、マトリックス中のＣｏ
量が減少し、その結果として透磁率が低下することによ
る。本発明において熱処理温度の下限を８００℃に限定
した理由は、８００℃未満では元素の拡散が遅く、Ｃｏ
Ｃｒ相の析出に長時間を要し実用的でないことによる。
上限温度を１２５０℃に限定した理由は、平衡状態図か
らもＣｏＣｒ相つまりσ相は１２８０℃まで分解するこ
とはないが、必要以上の高温までの加熱は、結晶粒を粗
大化させるなどの問題点が生じるので実質的には１２５
０℃以下が好ましいからである。アトマイズにおいては
粉末は急速凝固により作製されるため、組成的には鋳造
材と比較して格段に優れており、また熱間での固化成形
時にも均一化されるため、熱処理時の均熱後実質的には
３０分でその効果は現れることを確認した。BEST MODE FOR CARRYING OUT THE INVENTION In the present invention, the magnetic permeability of a target material is reduced by a heat treatment.
Due to the reduced volume and consequently the permeability. The reason that the lower limit of the heat treatment temperature is limited to 800 ° C. in the present invention is that the diffusion of elements is slow below 800 ° C.
This is because it takes a long time to precipitate the Cr phase and is not practical.
The reason that the upper limit temperature is limited to 1250 ° C. is that the CoCr phase, that is, the σ phase does not decompose to 1280 ° C. even from the equilibrium diagram, but heating to a temperature higher than necessary causes problems such as coarsening of crystal grains. As a point is generated, it is substantially 125
This is because the temperature is preferably 0 ° C. or lower. In atomization, powder is produced by rapid solidification, so its composition is much better than that of cast material.Because it is uniform during hot solidification molding, it is uniform after heat treatment. It was confirmed that the effect appeared substantially in 30 minutes.
【０００９】[0009]
実施例１ Ｃｏ−Ｃｒ12−Ｔａ4 の合金粉末をガスアトマイズ法で
作製し、金属製の容器に充填・ロータリー式真空ポンプ
で脱気後、押出し装置により１２００℃で径２１０ｍ
ｍ、長さ１５０ｍｍの成形材を作製し、一旦室温まで冷
却した。径２１０ｍｍ、長さ１００ｍｍ（Ａ部）と径２
１０ｍｍ、長さ５０ｍｍ（Ｂ部）を切り出し、８００
℃、２時間熱処理を行い、水冷し、機械加工を経てター
ゲット材に作製した。同一の成形材から透磁率測定用試
料を切り出し、透磁率を測定し、図１に示すように熱処
理を行っていないＢ部の透磁率と比較し、透磁率が１０
％低減していることを確認した。すなわち、図１はＣｏ
−Ｃｒ−Ｔａの場合の熱処理温度と透磁率との変化を示
す図であり、熱処理なしを１００とした時の磁場１ｋＯ
ｅにおける透磁率の相対値として表している。また、図
２はＣｏ−Ｃｒ−Ｔａの場合の熱処理温度とＣｏＣｒ相
の析出に伴うＸ線の回析強度の変化を示す図である。こ
れにより熱処理条件の違いによりＸ線相対強度に変化が
あることが判る。Example 1 An alloy powder of Co—Cr 12 —Ta 4 was produced by a gas atomization method, filled in a metal container, deaerated by a rotary vacuum pump, and then extruded at 1200 ° C. with a diameter of 210 m by an extruder.
A molded material having a length of 150 mm and a length of 150 m was prepared and once cooled to room temperature. Diameter 210mm, length 100mm (A part) and diameter 2
Cut out 10mm, length 50mm (part B), 800
The resultant was subjected to a heat treatment at a temperature of 2 ° C. for 2 hours, cooled with water, and fabricated into a target material through machining. A sample for measuring magnetic permeability was cut out from the same molding material, and the magnetic permeability was measured. As shown in FIG.
% Reduction. That is, FIG.
FIG. 4 is a diagram showing a change in heat treatment temperature and magnetic permeability in the case of -Cr-Ta, where a magnetic field of 1 kO
It is expressed as a relative value of the magnetic permeability in e. FIG. 2 is a diagram showing a change in the X-ray diffraction intensity accompanying the heat treatment temperature and the precipitation of the CoCr phase in the case of Co—Cr—Ta. This indicates that there is a change in the X-ray relative intensity due to the difference in the heat treatment conditions.
【００１０】実施例２ Ｃｏ−Ｃｒ14−Ｔａ6 の合金粉末をガスアトマイズ法で
作製し、金属製の容器に充填・ロータリー式真空ポンプ
で脱気後、押出し装置により１２００℃で径２１０ｍ
ｍ、長さ１００ｍｍの成形材を作製し、一旦室温まで冷
却した。径２１０ｍｍ、長さ５０ｍｍ（Ａ部）と径２１
０ｍｍ、長さ５０ｍｍ（Ｂ部）を切り出し、１０００
℃、２時間熱処理を行い、油冷し、機械加工を経てター
ゲット材に作製した。同一の成形材から透磁率測定用試
料を切り出し、透磁率を測定し、図１に示すように熱処
理を行っていないＢ部の透磁率と比較し、透磁率が１５
％低減していることを確認した。Example 2 An alloy powder of Co—Cr 14 —Ta 6 was prepared by a gas atomizing method, filled in a metal container, deaerated by a rotary vacuum pump, and extruded at 1200 ° C. with a diameter of 210 m by an extruder.
A molded material having a length of 100 mm and a length of 100 mm was prepared and once cooled to room temperature. Diameter 210mm, length 50mm (A part) and diameter 21
Cut out 0 mm and length 50 mm (part B), 1000
A heat treatment was performed at 2 ° C. for 2 hours, oil-cooled, and machined to produce a target material. A sample for measuring magnetic permeability was cut out from the same molding material, and the magnetic permeability was measured. As shown in FIG.
% Reduction.
【００１１】実施例３ Ｃｏ−Ｃｒ14−Ｐｔ8 の合金粉末をガスアトマイズ法で
作製し、金属製の容器に充填・ロータリー式真空ポンプ
で脱気後、押出し装置により１２００℃で径１６０ｍ
ｍ、長さ１００ｍｍの成形材を作製し、一旦室温まで冷
却した。径１６０ｍｍ、長さ５０ｍｍ（Ａ部）と径１６
０ｍｍ、長さ５０ｍｍ（Ｂ部）を切り出し、１０５０
℃、１時間熱処理を行い、油冷し、機械加工を経てター
ゲット材に作製した。同一の成形材から透磁率測定用試
料を切り出し、透磁率を測定し、図１に示すように熱処
理を行っていないＢ部の透磁率と比較し、透磁率が２０
％低減していることを確認した。Example 3 An alloy powder of Co—Cr 14 —Pt 8 was prepared by a gas atomization method, filled in a metal container, deaerated by a rotary vacuum pump, and extruded at a temperature of 1200 ° C. with a diameter of 160 m by an extruder.
A molded material having a length of 100 mm and a length of 100 mm was prepared and once cooled to room temperature. Diameter 160mm, length 50mm (A part) and diameter 16
Cut out 0 mm and length 50 mm (part B), 1050
C. for 1 hour, oil-cooled, and machined to produce a target material. A sample for magnetic permeability measurement was cut out from the same molding material, and the magnetic permeability was measured. As shown in FIG.
% Reduction.
【００１２】実施例４ Ｃｏ−Ｃｒ13−Ｔａ3 −Ｐｔ13の合金粉末をガスアトマ
イズ法で作製し、金属製の容器に充填・ロータリー式真
空ポンプで脱気後、押出し装置により１２００℃で径２
１０ｍｍ、長さ２００ｍｍの成形材を作製し、一旦室温
まで冷却した。径２１０ｍｍ、長さ１００ｍｍ（Ａ部）
と径２１０ｍｍ、長さ１００ｍｍ（Ｂ部）を切り出し、
１０５０℃、１時間熱処理を行い、油冷し、機械加工を
経てターゲット材に作製した。同一の成形材から透磁率
測定用試料を切り出し、透磁率を測定し、図１に示すよ
うに熱処理を行っていないＢ部の透磁率と比較し、透磁
率が２０％低減していることを確認した。Example 4 An alloy powder of Co—Cr 13 —Ta 3 —Pt 13 was prepared by a gas atomization method, filled in a metal container, deaerated by a rotary vacuum pump, and then extruded at 1200 ° C. by an extruder.
A molded material having a length of 10 mm and a length of 200 mm was prepared and once cooled to room temperature. Diameter 210mm, length 100mm (A part)
And cut out the diameter 210mm, length 100mm (part B),
Heat treatment was performed at 1050 ° C. for 1 hour, oil-cooled, and machined to produce a target material. A sample for measuring the magnetic permeability was cut out from the same molding material, and the magnetic permeability was measured. As shown in FIG. 1, the magnetic permeability was reduced by 20% as compared with the magnetic permeability of the part B not subjected to the heat treatment. confirmed.
【００１３】[0013]
【発明の効果】以上述べたように、本発明によるスパッ
タリングにより作製された薄膜の磁気特性を劣化させる
ことなく、ターゲット材の透磁率は実質１０〜２０％低
減された。この低透磁率化されたターゲットは機械的な
歪みが導入されておらず、ろう付け時の加熱によって
も、またスパッタリング中にもターゲット材に反りが発
生することなく、効率良く薄膜を作製することができる
ようになった。As described above, the magnetic permeability of the target material was substantially reduced by 10 to 20% without deteriorating the magnetic properties of the thin film produced by sputtering according to the present invention. This low-permeability target does not introduce mechanical strain, and can efficiently produce a thin film without heating during brazing and without warping of the target material during sputtering. Is now available.
【図１】Ｃｏ−Ｃｒ−Ｔａの場合の熱処理温度と透磁率
との変化を示す図である。FIG. 1 is a diagram showing changes in heat treatment temperature and magnetic permeability in the case of Co—Cr—Ta.
【図２】Ｃｏ−Ｃｒ−Ｔａの場合の熱処理温度とＣｏＣ
ｒ相の析出に伴うＸ線の回析強度との変化を示す図であ
る。FIG. 2 shows the heat treatment temperature and CoC for Co—Cr—Ta.
It is a figure which shows the change with the diffraction intensity of X-ray accompanying precipitation of r phase.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｆ 41/18 Ｈ０１Ｆ 41/18 (72)発明者 田中 義和 兵庫県姫路市飾磨区中島字一文字3007番地 山陽特殊製鋼株式会社内──────────────────────────────────────────────────続 き Continuation of the front page (51) Int.Cl. 6 Identification number Agency reference number FI Technical indication location H01F 41/18 H01F 41/18 (72) Inventor Yoshikazu Tanaka 3007 character of Nakajima character in Shima, Himeji-shi, Hyogo Address Sanyo Special Steel Co., Ltd.
Claims (6)
ズ粉末を金属製の容器に充填・封入し、これを加圧圧縮
用金型内で高温高圧プレスして固化成形し、一旦室温ま
で冷却した後、８００℃〜１２５０℃の温度で低透磁率
化のための熱処理を行い、冷却し、所定の形状に機械加
工することを特徴とする磁気記録媒体用低透磁率スパッ
タリングＣｏ系ターゲット材の製造方法。1. A gas atomized powder of a Co—Cr—Ta-based alloy is filled and sealed in a metal container, and this is solidified and formed by high-temperature and high-pressure pressing in a press and compression mold, and once cooled to room temperature. Thereafter, a heat treatment for reducing the magnetic permeability is performed at a temperature of 800 ° C. to 1250 ° C., and the resultant is cooled and machined into a predetermined shape, thereby producing a sputtering target material having a low magnetic permeability for a magnetic recording medium. Method.
ズ粉末を金属製の容器に充填・封入し、これを加圧圧縮
用金型内で高温高圧プレスして固化成形した後、冷却途
中にて８００℃〜１２５０℃の温度で低透磁率化のため
の熱処理を行ってから、室温まで冷却し、所定の形状に
機械加工することを特徴とする磁気記録媒体用低透磁率
スパッタリングＣｏ系ターゲット材の製造方法。2. A gas atomized powder of a Co—Cr—Ta-based alloy is filled and sealed in a metal container, and is solidified by high-temperature and high-pressure pressing in a metal mold for pressurization and compression. A low-magnetic-permeability sputtering Co-based target material for a magnetic recording medium, which is heat-treated at a temperature of 800 ° C. to 1250 ° C. to lower the magnetic permeability, then cooled to room temperature, and machined into a predetermined shape. Manufacturing method.
ズ粉末を金属製の容器に充填・封入し、これを加圧圧縮
用金型内で高温高圧プレスして固化成形した後、一旦室
温まで冷却した後、８００℃〜１２５０℃の温度で低透
磁率化のための熱処理を行い、冷却し、所定の形状に機
械加工することを特徴とする磁気記録媒体用低透磁率ス
パッタリングＣｏ系ターゲット材の製造方法。3. A gas atomized powder of a Co—Cr—Pt alloy is filled and sealed in a metal container, and is solidified by high-temperature and high-pressure pressing in a pressure compression mold, and then cooled to room temperature once. After that, a heat treatment for lowering the magnetic permeability is performed at a temperature of 800 ° C. to 1250 ° C., cooled, and machined into a predetermined shape. Production method.
ズ粉末を金属製の容器に充填・封入し、これを加圧圧縮
用金型内で高温高圧プレスして固化成形した後、冷却途
中にて８００℃〜１２５０℃の温度で低透磁率化のため
の熱処理を行い、冷却し、所定の形状に機械加工するこ
とを特徴とする磁気記録媒体用低透磁率スパッタリング
Ｃｏ系ターゲット材の製造方法。4. A gas atomized powder of a Co—Cr—Pt-based alloy is filled and sealed in a metal container, and is solidified by high-temperature and high-pressure pressing in a metal mold for pressurization and compression. A method for producing a low-magnetic-permeability sputtering Co-based target material for a magnetic recording medium, comprising performing a heat treatment at a temperature of 800 ° C. to 1250 ° C. for lowering the magnetic permeability, cooling, and machining into a predetermined shape.
トマイズ粉末を金属製の容器に充填・封入し、これを加
圧圧縮用金型内で高温高圧プレスして固化成形した後、
容器を除去し該合金成形材部分を取り出し、一旦室温ま
で冷却した後、８００℃〜１２５０℃の温度で低透磁率
化のための熱処理を行い、冷却し、所定の形状に機械加
工することを特徴とする磁気記録媒体用低透磁率スパッ
タリングＣｏ系ターゲット材の製造方法。5. A gas atomized powder of a Co—Cr—Ta—Pt alloy is filled and sealed in a metal container, and is solidified by high-temperature and high-pressure pressing in a press and compression mold.
After removing the container and taking out the alloy molding material portion, and once cooling to room temperature, heat treatment for lowering the magnetic permeability at a temperature of 800 ° C. to 1250 ° C. is performed, followed by cooling and machining into a predetermined shape. A method for producing a low magnetic permeability sputtering Co-based target material for a magnetic recording medium.
トマイズ粉末を金属製の容器に充填・封入し、これを加
圧圧縮用金型内で高温高圧プレスして固化成形した後、
容器を除去し該合金成形材部分を取り出し、冷却途中に
て８００℃〜１２５０℃の温度で低透磁率化のための熱
処理を行い、冷却し、所定の形状に機械加工することを
特徴とする磁気記録媒体用低透磁率スパッタリングＣｏ
系ターゲット材の製造方法。6. A gas atomized powder of a Co—Cr—Ta—Pt alloy is filled and sealed in a metal container, and is solidified by high-temperature and high-pressure pressing in a metal mold for pressure compression.
The method is characterized in that the container is removed, the alloy molding material portion is taken out, heat treatment for lowering the magnetic permeability is performed at a temperature of 800 ° C. to 1250 ° C. during cooling, cooling, and machining to a predetermined shape. Low permeability sputtering Co for magnetic recording media
Method of manufacturing a target material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16347596A JPH108243A (en) | 1996-06-24 | 1996-06-24 | Production of low permeability sputtering cobalt base target material for magnetic recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16347596A JPH108243A (en) | 1996-06-24 | 1996-06-24 | Production of low permeability sputtering cobalt base target material for magnetic recording medium |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002079529A Division JP2002363615A (en) | 2002-03-20 | 2002-03-20 | METHOD FOR MANUFACTURING Co-TYPE SPUTTERING TARGET MATERIAL WITH LOW MAGNETIC PERMEABILITY FOR MAGNETIC RECORDING MEDIUM |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH108243A true JPH108243A (en) | 1998-01-13 |
Family
ID=15774586
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16347596A Pending JPH108243A (en) | 1996-06-24 | 1996-06-24 | Production of low permeability sputtering cobalt base target material for magnetic recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH108243A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001303242A (en) * | 2000-04-27 | 2001-10-31 | Mitsui Mining & Smelting Co Ltd | Manufacturing method of sputtering target |
| JP2003057002A (en) * | 2001-08-08 | 2003-02-26 | Central Res Inst Of Electric Power Ind | Inspection method for coating thickness |
| JP2011214039A (en) * | 2010-03-31 | 2011-10-27 | Sanyo Special Steel Co Ltd | Method for producing sputtering target material |
| US8318314B2 (en) | 2004-08-10 | 2012-11-27 | Jx Nippon Mining & Metals Corporation | Barrier film for flexible copper substrate and sputtering target for forming barrier film |
-
1996
- 1996-06-24 JP JP16347596A patent/JPH108243A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001303242A (en) * | 2000-04-27 | 2001-10-31 | Mitsui Mining & Smelting Co Ltd | Manufacturing method of sputtering target |
| JP2003057002A (en) * | 2001-08-08 | 2003-02-26 | Central Res Inst Of Electric Power Ind | Inspection method for coating thickness |
| JP4591989B2 (en) * | 2001-08-08 | 2010-12-01 | 財団法人電力中央研究所 | Coating thickness inspection method |
| US8318314B2 (en) | 2004-08-10 | 2012-11-27 | Jx Nippon Mining & Metals Corporation | Barrier film for flexible copper substrate and sputtering target for forming barrier film |
| JP2011214039A (en) * | 2010-03-31 | 2011-10-27 | Sanyo Special Steel Co Ltd | Method for producing sputtering target material |
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