JPH04308080A - Co-cr-ta alloy target and production thereof - Google Patents
Co-cr-ta alloy target and production thereofInfo
- Publication number
- JPH04308080A JPH04308080A JP9641291A JP9641291A JPH04308080A JP H04308080 A JPH04308080 A JP H04308080A JP 9641291 A JP9641291 A JP 9641291A JP 9641291 A JP9641291 A JP 9641291A JP H04308080 A JPH04308080 A JP H04308080A
- Authority
- JP
- Japan
- Prior art keywords
- target
- alloy
- hot
- sputtering
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910001362 Ta alloys Inorganic materials 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000000843 powder Substances 0.000 claims abstract description 19
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 238000007712 rapid solidification Methods 0.000 claims description 5
- 230000035699 permeability Effects 0.000 abstract description 13
- 238000005204 segregation Methods 0.000 abstract description 7
- 238000001816 cooling Methods 0.000 abstract description 3
- 238000007731 hot pressing Methods 0.000 abstract description 2
- 238000007711 solidification Methods 0.000 abstract 1
- 230000008023 solidification Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 18
- 239000010408 film Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 14
- 238000002844 melting Methods 0.000 description 10
- 230000008018 melting Effects 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 9
- 239000000203 mixture Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 229910000765 intermetallic Inorganic materials 0.000 description 7
- 238000005266 casting Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000009689 gas atomisation Methods 0.000 description 5
- 238000005477 sputtering target Methods 0.000 description 5
- 239000002775 capsule Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 3
- 229910001004 magnetic alloy Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000005096 rolling process Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000005242 forging Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000010079 rubber tapping Methods 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 1
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004453 electron probe microanalysis Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005098 hot rolling Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000013028 medium composition Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000009692 water atomization Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、磁気記録媒体の製造に
使用されるＣｏ−Ｃｒ−Ｔａ合金ターゲットおよびその
製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a Co--Cr--Ta alloy target used for manufacturing magnetic recording media and a method for manufacturing the same.
【０００２】0002
【従来の技術】近年、情報量の急激な増加に伴い、これ
らの情報を高密度に記録し、かつ正確に再生することが
要求されている。特にコンピュータの大容量外部メモリ
ーとして使用されているハードディスクにおいては、高
密度記録特性や記録の信頼性が強く要求され、ハードデ
ィスクの改善が急速に進みつつある。これらの発展は、
用いられる記録体、ヘッド、ドライブなどのトータルシ
ステムの改良により達成されてきたが、近年、特に記録
体の特性向上が求められるようになってきた。この記録
体には図１に示すように、Ｎｉ−Ｐメッキ２を施したＡ
ｌ基板１等の非磁性基板上にマグネトロン・スパッタリ
ング法により、純Ｃｒ膜３、磁性合金膜である記録媒体
４を形成した後、ヘッドとの潤滑を目的として保護膜で
あるカーボン膜５を形成する。前記磁性合金膜としては
、Ｃｏ基の合金が用いられているが、中でもＣｏ−Ｃｒ
−Ｔａ系合金がＳ／Ｎ比が良好であることから主流とな
っている。前記、磁性合金膜の形成に用いられるスパッ
タリング用ターゲット材の製造方法としては、真空溶解
したものを鋳造すること（以下真空溶解・鋳造と称する
）によりインゴットを作成し、このインゴットを熱間加
工あるいはさらに冷間加工を施した材料からターゲット
形状に機械加工する手法がとられている。2. Description of the Related Art In recent years, with the rapid increase in the amount of information, it has become necessary to record this information at high density and to reproduce it accurately. In particular, hard disks used as large-capacity external memories for computers are strongly required to have high-density recording characteristics and recording reliability, and improvements in hard disks are rapidly progressing. These developments are
This has been achieved by improving the total system such as the recording medium, head, and drive used, but in recent years, there has been a particular demand for improved characteristics of the recording medium. As shown in FIG. 1, this recording medium has an A
After forming a pure Cr film 3 and a recording medium 4 which is a magnetic alloy film on a non-magnetic substrate such as a substrate 1 by magnetron sputtering method, a carbon film 5 which is a protective film is formed for the purpose of lubricating the head. do. Co-based alloys are used as the magnetic alloy film, among which Co-Cr
-Ta-based alloys have become mainstream because they have a good S/N ratio. The method for manufacturing the sputtering target material used to form the magnetic alloy film is to create an ingot by casting something that has been melted in vacuum (hereinafter referred to as vacuum melting/casting), and then hot-processing or casting the ingot. Furthermore, a method of machining the target shape from cold-worked material has been adopted.
【０００３】0003
【発明が解決しようとする課題】前記Ｃｏ−Ｃｒ−Ｔａ
合金の組成としては、Ｃｏ−１２Ｃｒ−２Ｔａ（ａｔ％
）が主として用いられている。すなわち、今まではＴａ
含有量が２ａｔ％と少ないために真空溶解・鋳造による
方法でも、特に偏析の問題は生じなかったのである。し
かし、さらに薄膜保磁力の向上を目的として、Ｔａ含有
量を増やす傾向にあり、Ｃｏ−（８〜１４ａｔ％）Ｃｒ
−（２〜５ａｔ％）Ｔａまでの組成範囲の合金が用いら
れるようになってきた。前述したような真空溶解・鋳造
でＣｏ−Ｃｒ−Ｔａ合金は、Ｔａ含有量が２ａｔ％を越
えると、Ｔａはマトリックス中に固溶できなくなり、Ｃ
ｏ２Ｔａ、あるいはＣｒ２Ｔａという金属間化合物の形
で晶出するようになる。この晶出物は鋳造インゴットの
最終凝固部付近を中心にして偏析して存在するようにな
る。
このような鋳造インゴットを熱間加工して、スパッタリ
ング用ターゲット材を製造した場合、局所的に金属間化
合物の多い箇所、少ない箇所が存在することになる。こ
のような成分偏析のあるスパッタリング用ターゲットで
記録体を成膜した場合、媒体組成はスパッタリングロッ
トごとに変動してしまうことになり所期の薄膜磁気特性
を安定して得ることは非常に困難である。[Problems to be Solved by the Invention] The Co-Cr-Ta
The composition of the alloy is Co-12Cr-2Ta (at%
) are mainly used. That is, until now Ta
Because the content was as low as 2 at %, no particular segregation problem occurred even in the vacuum melting/casting method. However, with the aim of further improving the thin film coercive force, there is a tendency to increase the Ta content, Co-(8-14 at%) Cr
-(2 to 5 at%) Ta alloys have come to be used. When a Co-Cr-Ta alloy is produced by vacuum melting and casting as described above, when the Ta content exceeds 2 at%, Ta cannot be solidly dissolved in the matrix, and C
It begins to crystallize in the form of an intermetallic compound called o2Ta or Cr2Ta. This crystallized material comes to exist in a segregated manner around the final solidified part of the cast ingot. When such a cast ingot is hot-processed to produce a sputtering target material, there will be local areas where there are a lot of intermetallic compounds and there are places where there are few local intermetallic compounds. If a recording medium is formed using a sputtering target with such component segregation, the medium composition will vary from sputtering lot to sputtering lot, making it extremely difficult to stably obtain the desired thin film magnetic properties. be.
【０００４】また、このような真空溶解・鋳造材の場合
、残留応力などの影響により最大透磁率の値が４０〜１
００と非常に大きくばらついてしまうという問題がある
。
スパッタ成膜では、ターゲットの表面にマグネットを配
置し、ターゲット表面から漏洩磁界を発生させ、この漏
洩磁界によってターゲット表面のプラズマ発生効率を高
くするマグネトロンスパッタ成膜が広く採用されている
。このターゲット表面からの漏洩磁界は通常２００〜４
００ガウス程度に設定される。漏洩磁界を２００ガウス
以上とするのは、これより小さいとプラズマの発生効率
が悪く、したがってスパッタ放電が不安定であるためで
あり、漏洩磁界を４００ガウス以下にするのは、これを
越えると局所的にプラズマの密度が高くなり、エロージ
ョンが深く狭く形成されてしまうことによる。ターゲッ
ト表面からの漏洩磁界の強度は、磁性ターゲットの場合
、材料の最大透磁率と相関しており、最大透磁率の小さ
な材料はターゲット表面からの漏洩磁界は大きくなり、
最大透磁率の大きな材料は、漏洩磁界は小さくなる。以
上のような理由から最大透磁率のバラツキの大きいター
ゲットを使用する場合、スパッタ装置のオペレータは、
ターゲット交換ごとに、ターゲットの最大透磁率にあわ
せて、漏洩磁界の強さが２００〜４００ガウスになるよ
うに、ターゲット裏面の磁石を調整する必要があり、作
業が非常に煩雑で使用し難いという問題がある。本発明
の目的は、偏析等によるターゲット中の組成の変動がな
く、ターゲットごとの最大透磁率のバラツキの少ないＣ
ｏ−Ｃｒ−Ｔａ合金ターゲットおよびその製造方法を提
供することである。In addition, in the case of such vacuum melted and cast materials, the maximum magnetic permeability value varies from 40 to 1 due to the influence of residual stress, etc.
There is a problem that there is a very large variation between 00 and 00. In sputter film formation, magnetron sputter film formation is widely used, in which a magnet is placed on the surface of a target to generate a leakage magnetic field from the target surface, and the leakage magnetic field increases plasma generation efficiency on the target surface. The leakage magnetic field from this target surface is usually 200 to 4
It is set to about 0.00 Gauss. The reason why the leakage magnetic field is set to 200 Gauss or more is because if it is smaller than this, the plasma generation efficiency is poor and the sputter discharge is therefore unstable.The reason why the leakage magnetic field is set to 400 Gauss or less is because if it exceeds this, the This is due to the fact that the plasma density becomes higher and the erosion becomes deeper and narrower. In the case of a magnetic target, the strength of the leakage magnetic field from the target surface is correlated with the maximum magnetic permeability of the material, and the material with a small maximum permeability has a large leakage magnetic field from the target surface.
A material with a large maximum magnetic permeability has a small leakage magnetic field. For the above reasons, when using targets with large variations in maximum permeability, sputtering equipment operators should
Each time the target is replaced, it is necessary to adjust the magnet on the back of the target so that the strength of the leakage magnetic field is 200 to 400 Gauss according to the target's maximum magnetic permeability, which is extremely complicated and difficult to use. There's a problem. The purpose of the present invention is to reduce the variation in the composition of the target due to segregation, etc., and to reduce the variation in maximum permeability from target to target.
An object of the present invention is to provide an o-Cr-Ta alloy target and a method for manufacturing the same.
【０００５】[0005]
【課題を解決するための手段】本発明は、Ｃｏ−Ｃｒ−
Ｔａ合金粉末の焼結体であり、焼結体のＴａの含有量が
原子％で２％以上であることを特徴とするＣｏ−Ｃｒ−
Ｔａ合金ターゲットである。また、本発明はＣｏ−Ｃｒ
−Ｔａ合金粉末を急冷凝固処理で作成し、得られた合金
粉末を熱間で加圧焼結することを特徴とする磁気記録媒
体用Ｃｏ−Ｃｒ−Ｔａ合金ターゲットの製造方法である
。本発明において、Ｃｏ−Ｃｒ−Ｔａ合金粉末の焼結体
とすることにより、粉末中にＣｏ２Ｔａ、Ｃｒ２Ｔａ等
の金属間化合物が析出した場合でも、粉末として組織中
に分散されるため、実質的にターゲット中の成分偏析を
なくすことができる。本発明において、Ｃｏ−Ｃｒ−Ｔ
ａ合金粉末を急冷凝固処理で作成する理由は、ターゲッ
トのマトリックス中にＴａを過飽和に固溶させるため、
およびＣｏ２Ｔａ， Ｃｒ２Ｔａ等の金属間化合物が晶
出した場合でもこれらを微細に分散させて成分偏析を生
じさせないためである。急冷凝固処理においては、冷却
速度を１０２℃／ｓｅｃ以上とした場合に、特に成分偏
析等が少なく好ましい。このような急冷凝固処理には、
水アトマイズ法、不活性ガスアトマイズ法、回転電極法
等が使用できるが、含有酸素量が少なく、粉末の量産性
も高い不活性ガスアトマイズ法が望ましい。このような
不活性ガスアトマイズ法を用いる場合は、溶湯の粘性を
良好に保つため、アトマイズ時の出湯温度は１６００℃
以上であることが望ましい。また、熱間で加圧焼結を行
なう場合は、高密度のターゲットを得るためである。タ
ーゲットの密度が低いとスパッタリング中にターゲット
表面に***が露出し、この***の部分に磁束が集中し、
異常放電の原因となるためである。このような熱間で加
圧焼結する方法としては、（１）ホットプレス、（２）
熱間静水圧プレス（以下ＨＩＰと称する）、（３）ＨＩ
Ｐ後熱間圧延する方法、（４）ＨＩＰ後熱間鍛造する方
法、（５）粉末を金属製のカプセルに入れ、熱間加工を
行なう熱間パック圧延あるいは熱間パック鍛造等が使用
できる。[Means for Solving the Problems] The present invention provides Co-Cr-
Co-Cr- which is a sintered body of Ta alloy powder, characterized in that the content of Ta in the sintered body is 2% or more in atomic %.
This is a Ta alloy target. Moreover, the present invention also provides Co-Cr
This is a method for producing a Co--Cr--Ta alloy target for a magnetic recording medium, which is characterized in that -Ta alloy powder is prepared by rapid solidification treatment, and the obtained alloy powder is hot-pressure sintered. In the present invention, by forming a sintered body of Co-Cr-Ta alloy powder, even if intermetallic compounds such as Co2Ta and Cr2Ta are precipitated in the powder, they will be dispersed in the structure as powder, so it will be substantially It is possible to eliminate component segregation in the target. In the present invention, Co-Cr-T
The reason why the a-alloy powder is created by rapid solidification treatment is to make Ta a supersaturated solid solution in the target matrix.
This is because even if intermetallic compounds such as Co2Ta and Cr2Ta crystallize, they are finely dispersed to prevent component segregation. In the rapid solidification treatment, it is preferable to set the cooling rate to 102° C./sec or higher because component segregation is particularly small. Such rapid solidification treatment includes
A water atomization method, an inert gas atomization method, a rotating electrode method, etc. can be used, but the inert gas atomization method is preferable because it contains a small amount of oxygen and has high mass productivity of powder. When using such an inert gas atomization method, in order to maintain good viscosity of the molten metal, the tapping temperature during atomization should be 1600℃.
The above is desirable. Moreover, when hot pressure sintering is performed, the purpose is to obtain a high-density target. If the density of the target is low, small holes will be exposed on the target surface during sputtering, and the magnetic flux will be concentrated at these small holes.
This is because it causes abnormal discharge. Methods of hot pressure sintering include (1) hot press, (2)
Hot isostatic press (hereinafter referred to as HIP), (3) HI
A method of hot rolling after P, (4) a method of hot forging after HIP, and (5) hot pack rolling or hot pack forging in which powder is placed in a metal capsule and hot worked can be used.
【０００６】本発明の製造方法で作成したＣｏ−Ｃｒ−
Ｔａ合金ターゲットは、マトリックス中にＴａを過飽和
に固溶し、また晶出しているＴａ金属間化合物について
も微細に分散している。このような材料は、スパッタリ
ングターゲットとして用いた場合、スパッタロット間の
薄膜組成の変動が非常に小さく、薄膜磁気特性の安定に
寄与する。さらにマトリックス中に過飽和に存在するＴ
ａおよびＴａの微細晶出物は、Ｔａ金属間化合物の粗大
晶出物により磁壁移動の際の障害となる効果が大きい。
このため本発明によるＣｏ−Ｃｒ−Ｔａ合金ターゲット
は、真空溶製材と比較し、最大透磁率を安定して低くす
ることが可能である。このようなスパッタリングターゲ
ットは、ターゲットの製造ロットによらず、安定した使
用効率を得ることが可能となる。[0006] Co-Cr- produced by the production method of the present invention
The Ta alloy target has Ta supersaturated as a solid solution in the matrix, and crystallized Ta intermetallic compounds are also finely dispersed. When such a material is used as a sputtering target, variations in thin film composition between sputter lots are very small, contributing to stability of thin film magnetic properties. Furthermore, T present in the matrix in a supersaturated state
The fine crystallized substances of a and Ta have a large effect of interfering with domain wall movement due to the coarse crystallized substances of the Ta intermetallic compound. Therefore, the Co-Cr-Ta alloy target according to the present invention can stably lower the maximum magnetic permeability compared to vacuum melting material. Such a sputtering target can achieve stable usage efficiency regardless of the production lot of the target.
【０００７】実施例１
まず、真空溶解法を用いて、表１のＮｏ．１〜Ｎｏ．６
に示すターゲット組成と同じ組成を有するマスター材を
作成し、このマスター材をガスアトマイズ装置内の溶解
室内にセットした。マスター材の溶解は１０マイナス３
乗Ｔｏｒｒ台の真空下で高周波誘導炉で行なう。真空溶
解が完了したら、溶解室内にＡｒガスを導入し、炉内圧
力が１ｋｇｆ／ｃｍ２程度まで高めた。その後、出湯温
度 １６５０℃、冷却速度 １０３℃／ｓｅｃ以上の条
件で溶解炉の下部に設けられた溶湯ノズルを開くと同時
に、溶湯に６０ｋｇｆ／ｃｍ２以上の圧力に加圧された
Ａｒガス流を吹き付け、ガスアトマイズを行なった。得
られた粉末のうち、３２メッシュ以下に分級した粉末を
ターゲットの原料粉末として使用した。Example 1 First, No. 1 in Table 1 was prepared using a vacuum melting method. 1~No. 6
A master material having the same composition as the target composition shown in is prepared, and this master material was set in a melting chamber in a gas atomization device. Dissolution of master material is 10 minus 3
The process is carried out in a high-frequency induction furnace under a vacuum of about 20 Torr. When the vacuum melting was completed, Ar gas was introduced into the melting chamber, and the pressure inside the furnace was increased to about 1 kgf/cm2. After that, the molten metal nozzle installed at the bottom of the melting furnace is opened under conditions of a tapping temperature of 1650℃ and a cooling rate of 103℃/sec or more, and at the same time, a flow of Ar gas pressurized to a pressure of 60kgf/cm2 or more is sprayed onto the molten metal. , gas atomization was performed. Among the obtained powders, the powders classified to 32 mesh or less were used as raw material powders for the target.
【０００８】[0008]
【表１】[Table 1]
【０００９】原料粉末の加圧焼結法としては、表１のＮ
ｏ．１〜Ｎｏ．６にそれぞれ対応する方法を用いて行な
った。
ＨＩＰによる製造方法の場合は、軟鋼製のカプセルに原
料粉末を充填し、加熱・脱気処理を行なった後、カプセ
ルを封止し、温度 １１５０℃、圧力 １０００ｋｇｆ
／ｃｍ２で２時間保持して、ＨＩＰ処理を行なった。こ
の後、さらに熱間加工するＮｏ．１，Ｎｏ．４の試料に
ついては、熱間加工の開始温度を１１５０℃とし、１パ
ス当りの圧下率を１０％以内とし、最終圧下率 ５０％
まで加工を行なった。Ｎｏ．３の試料については、ＨＩ
Ｐと同様のカプセルに、粉末を充填し、加熱・脱気処理
を行なった後封止し、開始温度１１５０℃で、１パス当
りの加工率を１５％とし、合計４パスの熱間パック圧延
を適用した。Ｎｏ．６の試料の場合は、プレスの加圧条
件を圧力 ２５０ｋｇｆ／ｃｍ２、温度 １２００℃、
保持時間 ２時間のホットプレスを適用し、焼結を行な
った。さらにターゲット特性の比較のために、表１にＮ
ｏ．７〜Ｎｏ．１１の試料として示すＣｏ−Ｃｒ−Ｔａ
合金を真空溶解・鋳造について作成した。なお、Ｎｏ．
１１の試料については、Ｔａ含有量が４ａｔ％を越える
と熱間加工性が著しく困難となるため、鋳造したままの
インゴットを機械加工した。以上のようにして製造した
素材から、成膜評価用ターゲット（寸法、φ２００×３
ｔ）および最大透磁率を測定するための磁性測定用試験
片を加工した。成膜評価については、マグネトロンタイ
プのスパッタ機にターゲットを装着し、ガラス基板（コ
ーニング７０５９）上に膜厚 １μｍのＣｏ−Ｃｒ−Ｔ
ａ合金膜を成膜する。この成膜操作を５０回繰り返して
薄膜試料を作成した。得られた薄膜試料はＥＰＭＡを用
いて組成分析を行ない、スパッタリングロット間のＴａ
の変動量を比較した。As a pressure sintering method for raw material powder, N in Table 1 is used.
o. 1~No. 6 using the methods corresponding to each. In the case of the HIP manufacturing method, raw material powder is filled into a mild steel capsule, heated and degassed, and then the capsule is sealed at a temperature of 1150°C and a pressure of 1000 kgf.
/cm2 for 2 hours to perform HIP treatment. After this, No. 1 is further hot-processed. 1, No. For sample No. 4, the hot working start temperature was 1150°C, the rolling reduction per pass was within 10%, and the final rolling reduction was 50%.
Processed up to. No. For sample 3, HI
A capsule similar to P was filled with powder, sealed after heating and degassing, and hot-pack rolled for a total of 4 passes at a starting temperature of 1150°C and a processing rate of 15% per pass. was applied. No. In the case of sample No. 6, the press conditions were: pressure 250 kgf/cm2, temperature 1200°C,
Sintering was performed by applying hot pressing for a holding time of 2 hours. Furthermore, for comparison of target characteristics, Table 1 shows N
o. 7~No. Co-Cr-Ta shown as sample No. 11
The alloy was prepared by vacuum melting and casting. In addition, No.
Regarding sample No. 11, since hot workability becomes extremely difficult when the Ta content exceeds 4 at%, the as-cast ingot was machined. From the material manufactured as described above, a target for film formation evaluation (dimensions: φ200 x 3
Magnetism measurement test pieces for measuring t) and maximum magnetic permeability were processed. For film formation evaluation, a target was attached to a magnetron type sputtering machine, and a Co-Cr-T film with a thickness of 1 μm was deposited on a glass substrate (Corning 7059).
a) Form an alloy film. This film forming operation was repeated 50 times to create a thin film sample. The composition of the obtained thin film sample was analyzed using EPMA, and the Ta between the sputtering lots was
The amount of variation was compared.
【００１０】0010
【表２】[Table 2]
【００１１】表２中には各スパッタリングロット間での
薄膜中のＴａ含有量の変動幅およびターゲットと同じ素
材の磁性測定用試験片を用いて測定した最大透磁率の値
を示す。表２から、本発明のＣｏ−Ｃｒ−Ｔａターゲッ
トは、スパッタ成膜時のＴａ組成ロットごとの変動幅が
比較例として示した溶解鋳造材と比して小さく、安定し
たものとなった。また、最大透磁率は、本発明のＣｏ−
Ｃｒ−Ｔａターゲットは３０〜４０の低い値で示してい
るのに対し、比較例ではほぼ同一の組成であっても本発
明に比べて高い値となっており、５０〜１１０の広い範
囲でばらついているため好ましくないことがわかる。Table 2 shows the variation range of the Ta content in the thin film between each sputtering lot and the maximum magnetic permeability value measured using a magnetism measurement test piece made of the same material as the target. Table 2 shows that the Co--Cr--Ta target of the present invention had a smaller variation range for each lot of Ta composition during sputtering film formation than the melted and cast material shown as a comparative example, and was stable. Moreover, the maximum magnetic permeability is the Co-
The Cr-Ta target shows a low value of 30 to 40, whereas the comparative example has a higher value than the present invention even though the composition is almost the same, and it varies in a wide range of 50 to 110. It can be seen that this is not desirable because it is
【００１２】0012
【発明の効果】本発明によれば、Ｃｏ−Ｃｒ−Ｔａ系磁
気記録媒体のスパッタリングロット間の磁気特性の変動
が少なく良好な磁気記録体の薄膜を得ることができる。
また、本発明によればターゲットごとの最大透磁率のば
らつきが小さく、マグネトロンスパッタ装置を適用した
場合の磁石の調整が容易となり、作動効率が改善される
ので工業上極めて有効である。According to the present invention, it is possible to obtain a good thin film of a magnetic recording medium with little variation in magnetic properties between sputtering lots of a Co--Cr--Ta based magnetic recording medium. Further, according to the present invention, variations in maximum magnetic permeability from target to target are small, magnet adjustment becomes easy when a magnetron sputtering device is applied, and operating efficiency is improved, so that it is extremely effective industrially.
【図１】磁気ディスクの断面図である。FIG. 1 is a cross-sectional view of a magnetic disk.
１ Ａｌ基板 ２ Ｎｉ−Ｐメッキ層 ３ 純Ｃｒ ４ 磁気記録媒体 ５ カーボン保護膜 1 Al substrate 2 Ni-P plating layer 3 Pure Cr 4 Magnetic recording medium 5 Carbon protective film
Claims (2)
あり、焼結体のＴａの含有量が原子％で２％以上である
ことを特徴とするＣｏ−Ｃｒ−Ｔａ合金ターゲット。1. A Co-Cr-Ta alloy target, which is a sintered body of Co-Cr-Ta alloy powder, and the Ta content of the sintered body is 2% or more in atomic %.
処理で作成し、得られた合金粉末を熱間で加圧焼結する
ことを特徴とする磁気記録媒体用Ｃｏ−Ｃｒ−Ｔａ合金
ターゲットの製造方法。2. A Co-Cr-Ta alloy target for magnetic recording media, characterized in that a Co-Cr-Ta alloy powder is prepared by rapid solidification treatment, and the obtained alloy powder is hot pressure sintered. manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9641291A JPH04308080A (en) | 1991-04-02 | 1991-04-02 | Co-cr-ta alloy target and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9641291A JPH04308080A (en) | 1991-04-02 | 1991-04-02 | Co-cr-ta alloy target and production thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04308080A true JPH04308080A (en) | 1992-10-30 |
Family
ID=14164259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9641291A Pending JPH04308080A (en) | 1991-04-02 | 1991-04-02 | Co-cr-ta alloy target and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04308080A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019159856A1 (en) * | 2018-02-19 | 2019-08-22 | 山陽特殊製鋼株式会社 | Sputtering target material |
-
1991
- 1991-04-02 JP JP9641291A patent/JPH04308080A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019159856A1 (en) * | 2018-02-19 | 2019-08-22 | 山陽特殊製鋼株式会社 | Sputtering target material |
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