JPH10256257A - Formation of bump electrode of semiconductor device - Google Patents
Formation of bump electrode of semiconductor deviceInfo
- Publication number
- JPH10256257A JPH10256257A JP9055776A JP5577697A JPH10256257A JP H10256257 A JPH10256257 A JP H10256257A JP 9055776 A JP9055776 A JP 9055776A JP 5577697 A JP5577697 A JP 5577697A JP H10256257 A JPH10256257 A JP H10256257A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- semiconductor device
- film
- laser beam
- protruding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体装置をフリ
ップチップ方式やＴＡＢ方式を用いて実装する場合に必
要な突起電極を形成する半導体装置の突起電極形成方法
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a projection electrode of a semiconductor device for forming a projection electrode necessary for mounting a semiconductor device by using a flip chip method or a TAB method.
【０００２】[0002]
【従来の技術】従来、半導体装置は、通常外部と電気的
な接続をするための外部電極を有しており、通常、樹脂
パッケージ等にパッケージングする場合は、この外部電
極に金属ワイヤーを接続する。外部電極には、半導体素
子の配線に用いられるＡｌが用いられている。近年、電
子機器の小型化，高機能化の要求から、従来の樹脂パッ
ケージに変わり、ＴＣＰ（Ｔａｐｅ Ｃａｒｒｉｅｒ
ＰＫＧ）や、さらにベアチップを直接回路基板に実装す
るフリップチップ方式等の高密度実装技術が必要とされ
ている。これらの実装技術に用いる半導体装置の外部電
極には、図４に示すような、突起電極を必要とする。2. Description of the Related Art Conventionally, a semiconductor device usually has an external electrode for making an electrical connection to the outside. Usually, when packaging in a resin package or the like, a metal wire is connected to the external electrode. I do. For the external electrodes, Al used for wiring of the semiconductor element is used. In recent years, in response to demands for miniaturization and high performance of electronic equipment, the conventional resin package has been replaced with a TCP (Tape Carrier).
PKG) and a high-density mounting technology such as a flip chip method in which a bare chip is directly mounted on a circuit board. The external electrodes of the semiconductor device used for these mounting techniques require projecting electrodes as shown in FIG.
【０００３】図４は突起電極を有する従来の半導体装置
の断面図である。図４において、１は外部電極となるＡ
ｌ電極、３は半導体装置、４は保護膜、５はＮｉ粒子
膜、６はＮｉ膜、７はＡｕ膜である。この半導体装置３
は、外部電極となるＡｌ電極１上に、Ｎｉ粒子膜５，Ｎ
ｉ膜６，さらにＡｕ膜７を形成して突起電極を設けてい
る。ここで、Ｎｉ膜６およびＡｕ膜７は無電解めっき法
により形成している。この半導体装置３をベアチップ実
装する場合には、上記の突起電極を直接回路基板にフリ
ップチップ実装で接続したり、またＴＣＰにパッケージ
ングする。FIG. 4 is a sectional view of a conventional semiconductor device having a bump electrode. In FIG. 4, reference numeral 1 denotes an external electrode A
1 electrode, 3 is a semiconductor device, 4 is a protective film, 5 is a Ni particle film, 6 is a Ni film, and 7 is an Au film. This semiconductor device 3
A Ni particle film 5 and an N
The i-film 6 and the Au film 7 are formed to provide the protruding electrodes. Here, the Ni film 6 and the Au film 7 are formed by an electroless plating method. When the semiconductor device 3 is mounted on a bare chip, the above-mentioned protruding electrodes are directly connected to a circuit board by flip-chip mounting or packaged on a TCP.
【０００４】この図４の半導体装置の突起電極の形成方
法について図５を参照しながら説明する。図５は従来の
半導体装置の突起電極形成方法を示す工程断面図であ
る。図５（ａ）に示すように、突起電極形成前には、Ａ
ｌ電極１の表面に自然酸化膜２が形成されているため、
まず、リン酸や水酸化ナトリウムの水溶液中に浸漬する
ウエットエッチング工程によって、Ａｌ電極１の表面に
形成された自然酸化膜２の除去を行う（図５（ｂ））。[0004] A method for forming the protruding electrodes of the semiconductor device of FIG. 4 will be described with reference to FIG. FIG. 5 is a process sectional view showing a conventional method for forming a bump electrode of a semiconductor device. As shown in FIG. 5A, before forming the protruding electrode, A
Since the natural oxide film 2 is formed on the surface of the electrode 1,
First, the natural oxide film 2 formed on the surface of the Al electrode 1 is removed by a wet etching step of dipping in an aqueous solution of phosphoric acid or sodium hydroxide (FIG. 5B).
【０００５】つぎに、Ｎｉ粒子膜５を形成する。これ
は、前の工程によって除去した自然酸化膜２のＡｌ電極
１上への再形成を防止するために、８０℃に保持したＮ
ｉを含有するアルカリ性（ｐＨ９〜１０）の溶液中に６
０秒浸漬することにより、Ａｌと溶液中のＮｉイオンの
置換反応を利用してＡｌ電極１の表面に膜厚３００〜５
００ÅのＮｉ粒子膜５を形成する（図５（ｃ））。Next, a Ni particle film 5 is formed. This is because the natural oxide film 2 removed in the previous step is prevented from being re-formed on the Al electrode 1 and is kept at 80 ° C.
6 in an alkaline (pH 9 to 10) solution containing i.
By immersing for 0 second, a thickness of 300 to 5 is applied to the surface of the Al electrode 1 by utilizing a substitution reaction between Al and Ni ions in the solution.
A Ni particle film 5 having a thickness of 00 ° is formed (FIG. 5C).
【０００６】つぎに、ヒータで９０℃に加熱保持した無
電解Ｎｉめっき液中に半導体装置３を１０分間浸漬する
無電解Ｎｉめっき工程を行う。ここでは、前の工程で形
成したＮｉ粒子膜５が無電解Ｎｉめっき液中で触媒とし
て作用し、無電解Ｎｉめっき液の自己還元反応によりＮ
ｉ粒子膜５上にＮｉが自己析出し、Ｎｉ膜６が形成され
る（図５（ｄ））。Next, an electroless Ni plating step is performed in which the semiconductor device 3 is immersed in an electroless Ni plating solution heated and maintained at 90 ° C. by a heater for 10 minutes. Here, the Ni particle film 5 formed in the previous step acts as a catalyst in the electroless Ni plating solution, and N 2 is formed by a self-reduction reaction of the electroless Ni plating solution.
Ni is self-precipitated on the i-particle film 5, and a Ni film 6 is formed (FIG. 5D).
【０００７】つぎに、ヒータで８０℃に加熱保持した無
電解Ａｕめっき液中に半導体装置３を２０分間浸漬する
無電解Ａｕめっき工程を行う。これは、Ｎｉ膜６単独で
はＮｉの酸化膜のために接続性が悪いため、接続性を高
める目的で、Ａｕ膜７をＮｉと無電解Ａｕめっき液中の
Ａｕイオンとの置換反応によって形成する（図５
（ｅ））。Next, an electroless Au plating step of immersing the semiconductor device 3 in an electroless Au plating solution heated and maintained at 80 ° C. by a heater for 20 minutes is performed. This is because the Ni film 6 alone has poor connectivity due to the oxide film of Ni, and for the purpose of enhancing the connectivity, the Au film 7 is formed by a substitution reaction between Ni and Au ions in the electroless Au plating solution. (FIG. 5
(E)).
【０００８】[0008]
【発明が解決しようとする課題】上記従来の半導体装置
の突起電極形成方法では、エッチング液やめっき前処理
液や無電解めっき液に半導体装置３を浸漬するために、
半導体装置３上のすべてのＡｌ電極１上に無電解めっき
により突起電極が形成されるため、突起電極を形成しな
いＡｌ電極１においては、レジストによりＡｌ電極１の
表面を被覆するためのフォトリソグラフィ工程が必要と
なり、工程が複雑化するという問題点を有していた。ま
た、無電解めっき液を一定温度で保持するための長時間
加熱により、めっき液の劣化が進行し易いという問題点
を有していた。In the above-mentioned conventional method for forming a bump electrode of a semiconductor device, the semiconductor device 3 is immersed in an etching solution, a plating pretreatment solution or an electroless plating solution.
Since the protruding electrodes are formed on all of the Al electrodes 1 on the semiconductor device 3 by electroless plating, a photolithography process for covering the surface of the Al electrodes 1 with a resist is applied to the Al electrodes 1 on which no protruding electrodes are formed. Is required, and the process becomes complicated. In addition, there has been a problem that the plating solution is easily deteriorated by heating for a long time to maintain the electroless plating solution at a constant temperature.
【０００９】本発明の目的は、突起電極を必要とするＡ
ｌ電極上にのみ容易に突起電極を形成することができる
とともに、めっき液の劣化を抑制することができる半導
体装置の突起電極形成方法を提供することである。It is an object of the present invention to provide an A
It is an object of the present invention to provide a method for forming a protruding electrode of a semiconductor device, which can easily form a protruding electrode only on an electrode and can suppress deterioration of a plating solution.
【００１０】[0010]
【課題を解決するための手段】請求項１記載の半導体装
置の突起電極形成方法は、無電界めっき法によって半導
体装置のＡｌ電極上に金属膜からなる突起電極を形成す
る半導体装置の突起電極形成方法であって、無電解めっ
き液に浸漬した半導体装置のＡｌ電極上にレーザー光を
照射して突起電極となる金属膜を形成することを特徴と
する。According to a first aspect of the present invention, there is provided a method for forming a projecting electrode of a semiconductor device, comprising forming a projecting electrode made of a metal film on an Al electrode of the semiconductor device by electroless plating. A method comprising irradiating a laser beam onto an Al electrode of a semiconductor device immersed in an electroless plating solution to form a metal film to be a protruding electrode.
【００１１】この方法により、レーザー光を照射したＡ
ｌ電極付近のみの無電解めっき液が加熱されて、無電界
めっき反応が進行して突起電極が形成されるため、レー
ザー光を照射しないＡｌ電極上には突起電極は形成され
ず、容易に突起電極を必要とするＡｌ電極上にのみ突起
電極を形成することができるとともに、無電解めっき液
は突起電極の形成付近のみが局部加熱されるため、無電
解めっき液の劣化を抑制することができる。According to this method, the laser beam irradiated A
Since the electroless plating solution only near the electrode is heated and the electroless plating reaction proceeds to form a protruding electrode, no protruding electrode is formed on the Al electrode that is not irradiated with laser light, and the protruding electrode is easily formed. A protruding electrode can be formed only on an Al electrode that requires an electrode, and since the electroless plating solution is locally heated only in the vicinity of the formation of the protruding electrode, deterioration of the electroless plating solution can be suppressed. .
【００１２】請求項２記載の半導体装置の突起電極形成
方法は、請求項１記載の半導体装置の突起電極形成方法
において、形成すべき突起電極と対応する位置にレーザ
ー光の透過孔を設けたマスクを用いて、レーザー光をマ
スク上から透過孔を介してＡｌ電極上に照射するように
している。この方法により、レーザー光を照射しながら
レーザー光を移動させても、突起電極を形成しないＡｌ
電極等のマスクの透過孔に対応していない半導体装置上
の領域にはレーザー光が照射されず、突起電極を必要と
するＡｌ電極上にのみ順次連続的に照射して突起電極を
形成することができるため、処理時間を短縮することが
できる。According to a second aspect of the present invention, there is provided a method of forming a protruding electrode for a semiconductor device according to the first aspect, wherein a mask is provided with a laser beam transmission hole at a position corresponding to the protruding electrode to be formed. Is used to irradiate the laser beam from above the mask onto the Al electrode through the transmission hole. According to this method, even if the laser beam is moved while irradiating the laser beam, the Al
Areas on the semiconductor device that do not correspond to the transmission holes of the mask, such as electrodes, are not irradiated with laser light, and the projection electrodes are formed by sequentially and continuously irradiating only the Al electrodes that require the projection electrodes. Therefore, the processing time can be reduced.
【００１３】請求項３記載の半導体装置の突起電極形成
方法は、請求項１または２記載の半導体装置の突起電極
形成方法において、半導体装置のＡｌ電極上へのレーザ
ー光の照射中に、形成される突起電極へのレーザー光の
入射光と突起電極の表面からのレーザー光の反射光との
光路差により突起電極の高さを測定し、この測定値が所
望の値となるように突起電極を形成するようにしてい
る。According to a third aspect of the present invention, in the method of forming a bump electrode of a semiconductor device according to the first or second aspect, the bump is formed during the irradiation of the Al electrode of the semiconductor device with laser light. The height of the protruding electrode is measured by the optical path difference between the incident light of the laser beam on the protruding electrode and the reflected light of the laser beam from the surface of the protruding electrode, and the height of the protruding electrode is measured so that the measured value becomes a desired value. It is formed.
【００１４】この方法により、突起電極を形成中に、形
成される突起電極の高さを測定し、無電解めっきによる
突起電極の析出量を制御して、高さ精度の高い突起電極
を形成することができる。According to this method, the height of the formed protruding electrode is measured during the formation of the protruding electrode, and the amount of the protruding electrode deposited by electroless plating is controlled to form the protruding electrode with high height accuracy. be able to.
【００１５】[0015]
【発明の実施の形態】以下、本発明の実施の形態につい
て、図面を参照しながら説明する。 〔第１の実施の形態〕まず、本発明の第１の実施の形態
について説明する。図１は本発明の第１の実施の形態に
おける半導体装置の突起電極形成方法を示す工程断面図
である。図１において、１はＡｌ電極、２は自然酸化
膜、３は半導体装置、４は保護膜、５はＮｉ粒子膜、６
はＮｉ膜、７はＡｕ膜、８はレーザー光源、９はレーザ
ー光である。Embodiments of the present invention will be described below with reference to the drawings. [First Embodiment] First, a first embodiment of the present invention will be described. FIG. 1 is a process sectional view showing a method for forming a bump electrode of a semiconductor device according to a first embodiment of the present invention. In FIG. 1, 1 is an Al electrode, 2 is a natural oxide film, 3 is a semiconductor device, 4 is a protective film, 5 is a Ni particle film, 6
Is a Ni film, 7 is an Au film, 8 is a laser light source, and 9 is a laser beam.
【００１６】図１（ａ）に示すように、突起電極形成前
には、Ａｌ電極１の表面に自然酸化膜２が形成されてい
るため、まず、リン酸や水酸化ナトリウムの水溶液中に
浸漬するウエットエッチング工程によって、Ａｌ電極１
の表面に形成された自然酸化膜２の除去を行う（図１
（ｂ））。この後、純水により洗浄を行う。つぎに、図
１（ｃ）に示すように、突起電極を必要とするＡｌ電極
１上にＮｉ粒子膜５を形成する。図１（ｂ）の工程によ
って自然酸化膜２を除去したが、その後、純水により洗
浄することで再度Ａｌ電極１上に自然酸化膜が形成され
やすくなるため、このＡｌ電極１上への自然酸化膜の再
形成を防止するために、Ｎｉを含有するアルカリ性（ｐ
Ｈ９〜１０）の溶液中に半導体装置３を浸漬し、レーザ
ー光源８（アルゴンレーザー：５Ｗ）よりレーザー光９
を突起電極を必要とするＡｌ電極１に３０秒間照射す
る。このレーザー光９の照射によって、照射されたＡｌ
電極１の周辺部のみの局部加熱により液温を８０℃に加
熱し、Ａｌと溶液中のＮｉイオンの置換反応を利用して
Ａｌ電極１の表面に膜厚３００〜５００ÅのＮｉ粒子膜
５を形成する。このＮｉ粒子膜５の形成後、純水により
洗浄を行う。As shown in FIG. 1A, before the formation of the protruding electrodes, the natural oxide film 2 is formed on the surface of the Al electrode 1, so that it is first immersed in an aqueous solution of phosphoric acid or sodium hydroxide. Al electrode 1 by the wet etching process
Of the native oxide film 2 formed on the surface of FIG.
(B)). Thereafter, cleaning is performed with pure water. Next, as shown in FIG. 1 (c), a Ni particle film 5 is formed on the Al electrode 1 which requires a projection electrode. Although the natural oxide film 2 is removed by the process of FIG. 1B, the natural oxide film is easily formed on the Al electrode 1 again by washing with pure water. In order to prevent re-formation of the oxide film, an alkaline solution containing Ni (p
The semiconductor device 3 is immersed in a solution of H9 to H9, and a laser light source 8 (argon laser: 5 W) is used for laser light 9.
Is irradiated for 30 seconds to the Al electrode 1 which needs the protruding electrode. By the irradiation of the laser light 9, the irradiated Al
The liquid temperature is heated to 80 ° C. by local heating of only the peripheral portion of the electrode 1, and a Ni particle film 5 having a thickness of 300 to 500 ° is formed on the surface of the Al electrode 1 by utilizing a substitution reaction between Al and Ni ions in the solution. Form. After the formation of the Ni particle film 5, cleaning is performed with pure water.
【００１７】つぎに、図１（ｄ）に示すように、突起電
極を必要とするＡｌ電極１上にレーザー光９を照射し、
無電解めっき法によるＮｉ膜６を形成する。図１（ｃ）
の工程において形成されたＮｉ粒子膜５が、レーザー光
９の照射による無電解Ｎｉめっき液の局部加熱による無
電解Ｎｉめっきの析出反応の触媒として作用すること
で、無電解Ｎｉめっき液の自己還元反応によりＮｉ粒子
膜５上にＮｉが自己析出し、Ｎｉ膜６が形成される。具
体的には、半導体装置３を無電解Ｎｉめっき液に浸漬
し、レーザー光源８（アルゴンレーザー：６Ｗ）よりレ
ーザー光９を２〜５分間照射してＡｌ電極１の周辺部の
みの局部加熱により液温を９０℃に加熱することで、Ａ
ｌ電極１上に０．８〜２．０μｍのＮｉ膜６を形成す
る。このＮｉ膜６の形成後、純水により洗浄を行う。Next, as shown in FIG. 1 (d), a laser beam 9 is irradiated on the Al electrode 1 which needs a protruding electrode.
A Ni film 6 is formed by an electroless plating method. FIG. 1 (c)
The Ni particle film 5 formed in the step (1) acts as a catalyst for the deposition reaction of the electroless Ni plating by local heating of the electroless Ni plating solution by the irradiation of the laser light 9, whereby the self-reduction of the electroless Ni plating solution is performed. Ni self-precipitates on the Ni particle film 5 by the reaction, and the Ni film 6 is formed. Specifically, the semiconductor device 3 is immersed in an electroless Ni plating solution, irradiated with a laser beam 9 from a laser light source 8 (argon laser: 6 W) for 2 to 5 minutes, and locally heated only around the Al electrode 1. By heating the liquid temperature to 90 ° C, A
A Ni film 6 having a thickness of 0.8 to 2.0 μm is formed on the electrode 1. After the formation of the Ni film 6, cleaning is performed with pure water.
【００１８】つぎに、図１（ｅ）に示すように、突起電
極を必要とするＡｌ電極１上にレーザー光９を照射し、
無電解めっき法によるＡｕ膜７を形成する。具体的に
は、半導体装置３を無電解Ａｕめっき液に浸漬し、レー
ザー光源８（アルゴンレーザー：６Ｗ）よりレーザー光
９を５分間照射してＡｌ電極１の周辺部のみの局部加熱
により液温を９０℃に加熱することで、Ａｌ電極１上の
Ｎｉ膜６上に０．１〜０．２μｍのＡｕ膜８を形成す
る。Next, as shown in FIG. 1 (e), a laser beam 9 is irradiated on the Al electrode 1 which needs a protruding electrode.
An Au film 7 is formed by an electroless plating method. Specifically, the semiconductor device 3 is immersed in an electroless Au plating solution, irradiated with laser light 9 from a laser light source 8 (argon laser: 6 W) for 5 minutes, and heated locally by heating only the periphery of the Al electrode 1. Is heated to 90 ° C. to form an Au film 8 of 0.1 to 0.2 μm on the Ni film 6 on the Al electrode 1.
【００１９】なお、Ｎｉ粒子膜５，Ｎｉ膜６およびＡｕ
膜７を形成する場合のレーザーのパワー密度は、１０4
〜１０5 Ｗ／ｃｍ2 とする。この実施の形態によれば、
突起電極を必要とするＡｌ電極１にレーザー光源８より
レーザー光９を照射することで、レーザー光９が照射さ
れたＡｌ電極１の周辺部のめっき前処理液（Ｎｉ粒子膜
５形成用のＮｉ含有のアルカリ性溶液），無電解Ｎｉめ
っき液，無電解Ａｕめっき液が局部加熱されて、突起電
極の形成が進行するために、突起電極を形成しないＡｌ
電極１をレジストで被覆するためのフォトリソグラフィ
工程等を用いることなく、容易に、突起電極を必要とす
るＡｌ電極１のみに突起電極を形成することができる。
しかも、突起電極を形成する電極周辺部の無電解めっき
液のみが局部加熱されるために、無電解めっき液の劣化
を抑制することができる。The Ni particle film 5, the Ni film 6, and the Au film
The power density of the laser when forming the film 7 is 10 4
And ~10 5 W / cm 2. According to this embodiment,
By irradiating the laser light 9 from the laser light source 8 to the Al electrode 1 requiring the protruding electrode, a plating pretreatment liquid (Ni for forming the Ni particle film 5) around the Al electrode 1 irradiated with the laser light 9 is formed. Containing alkaline solution), the electroless Ni plating solution, and the electroless Au plating solution are locally heated, and the formation of the protruding electrodes proceeds.
A protruding electrode can be easily formed only on the Al electrode 1 that requires a protruding electrode without using a photolithography process or the like for covering the electrode 1 with a resist.
In addition, since only the electroless plating solution around the electrodes forming the protruding electrodes is locally heated, deterioration of the electroless plating solution can be suppressed.
【００２０】なお、この第１の実施の形態の場合、図１
（ｃ），（ｄ），（ｅ）の各工程において、１つのＡｌ
電極１の照射終了毎に、レーザー光９の照射を一時スト
ップし、つぎのＡｌ電極１に位置合わせしてから再び照
射を始めることになる。 〔第２の実施の形態〕つぎに、本発明の第２の実施の形
態について説明する。図２は本発明の第２の実施の形態
における半導体装置の突起電極形成方法の特徴点を示す
工程断面図である。In the case of the first embodiment, FIG.
In each of the steps (c), (d) and (e), one Al
Each time the irradiation of the electrode 1 is completed, the irradiation of the laser beam 9 is temporarily stopped, the irradiation is started again after the alignment with the next Al electrode 1 is performed. [Second Embodiment] Next, a second embodiment of the present invention will be described. FIG. 2 is a process sectional view showing the features of the method for forming a bump electrode of a semiconductor device according to the second embodiment of the present invention.
【００２１】この第２の実施の形態では、レーザー光９
の照射方法のみが第１の実施の形態と異なり、その他は
第１の実施の形態と同様である。以下、主に第１の実施
の形態と異なる特徴点について説明する。例えば、図１
（ｅ）のＡｕ膜７を形成する工程において、図２に示す
ように、突起電極を必要とするＡｌ電極１の位置に対応
してレーザー光９を透過する透過孔を設けたマスク１０
を半導体装置３上に設置し、これを無電解Ａｕめっき液
に浸漬し、マスク１０の透過孔を通してＡｌ電極１にレ
ーザー光９を照射する。そして、レーザー光９を照射し
ながらレーザー光９を移動させて順次Ａｌ電極１上を照
射して、突起電極を必要とする全てのＡｌ電極１上にＡ
ｕ膜７を形成する。ここで、レーザー光９を照射しなが
らレーザー光９を移動させても、マスク１０によって透
過孔に対応していない半導体装置３上の領域にはレーザ
ー光９が照射されず、突起電極を形成しないＡｌ電極１
にはめっき処理は施されない。なお、Ｎｉ粒子膜５およ
びＮｉ膜６を形成する工程でも、同様にマスク１０を用
いて、レーザー光９を照射しながらレーザー光９を移動
させて順次Ａｌ電極１上を照射し、突起電極を必要とす
る全てのＡｌ電極１上にＮｉ粒子膜５，Ｎｉ膜６を形成
すればよい。ここでは、マスク１０に設けた透過孔は、
形成すべき突起電極と同じサイズにしている。In the second embodiment, the laser light 9
Only the irradiation method is different from the first embodiment, and the other is the same as the first embodiment. Hereinafter, features that are different from the first embodiment will be mainly described. For example, FIG.
In the step (e) of forming the Au film 7, as shown in FIG. 2, a mask 10 provided with a transmission hole for transmitting a laser beam 9 corresponding to the position of the Al electrode 1 requiring a protruding electrode.
Is placed on a semiconductor device 3, which is immersed in an electroless Au plating solution, and the Al electrode 1 is irradiated with a laser beam 9 through a transmission hole of a mask 10. Then, while irradiating the laser beam 9, the laser beam 9 is moved to sequentially irradiate the Al electrode 1, and A is projected on all the Al electrodes 1 which need the protruding electrodes.
A u film 7 is formed. Here, even if the laser light 9 is moved while irradiating the laser light 9, a region on the semiconductor device 3 that does not correspond to the transmission hole by the mask 10 is not irradiated with the laser light 9, and no projection electrode is formed. Al electrode 1
Is not plated. In the step of forming the Ni particle film 5 and the Ni film 6, the laser light 9 is similarly moved while irradiating the laser light 9 using the mask 10 to irradiate the Al electrode 1 sequentially, thereby forming the protrusion electrode. The Ni particle film 5 and the Ni film 6 may be formed on all necessary Al electrodes 1. Here, the transmission holes provided in the mask 10 are:
It has the same size as the projection electrode to be formed.
【００２２】この第２の実施の形態によれば、第１の実
施の形態の効果に加え、Ａｌ電極１上にレーザー光９を
照射する際に、突起電極を必要とするＡｌ電極１の位置
に対応して透過孔を設けたマスク１０を用いることによ
り、レーザー光９を照射しながらレーザー光９を移動さ
せても、突起電極を形成しないＡｌ電極１等のマスク１
０の透過孔に対応していない半導体装置３上の領域には
レーザー光９が照射されず、突起電極を必要とするＡｌ
電極１上にのみ順次連続的に照射して突起電極となる膜
を形成することができるため、第１の実施の形態のよう
に、１つのＡｌ電極１の照射終了毎に、レーザー光９の
照射を一時ストップし、つぎのＡｌ電極１に位置合わせ
してから再び照射を始める場合に比べて、処理時間を短
縮することができる。According to the second embodiment, in addition to the effects of the first embodiment, the position of the Al electrode 1 that requires a protruding electrode when the Al electrode 1 is irradiated with the laser beam 9 By using a mask 10 provided with a transmission hole corresponding to the above, even if the laser light 9 is moved while irradiating the laser light 9, a mask 1 such as an Al electrode 1 which does not form a projection electrode is formed.
The laser light 9 is not irradiated to the region on the semiconductor device 3 which does not correspond to the transmission hole of No.
Since it is possible to form a film serving as a protruding electrode by sequentially and continuously irradiating only the electrode 1, the laser beam 9 is emitted every time the irradiation of one Al electrode 1 is completed as in the first embodiment. The processing time can be reduced as compared with the case where the irradiation is temporarily stopped, the position is adjusted to the next Al electrode 1, and the irradiation is started again.
【００２３】なお、レーザー光９を照射する際、マスク
１０が半導体装置３とともにめっき液等に浸漬されてい
ると、レーザー光９を移動中にも連続してめっき液等に
照射され、めっき液等の劣化が進行するため、マスク１
０はめっき液等の液面から出ている方が好ましい。 〔第３の実施の形態〕つきに、本発明の第３の実施の形
態について説明する。図３は本発明の第３の実施の形態
における半導体装置の突起電極形成方法の特徴点を示す
工程断面図である。図３において、１１はプリズム、１
２は受光素子である。When the mask 10 is immersed in a plating solution or the like together with the semiconductor device 3 when irradiating the laser beam 9, the plating solution or the like is continuously irradiated while the laser beam 9 is moving. Since the deterioration such as progresses, the mask 1
It is preferable that 0 comes out of the surface of the plating solution or the like. [Third Embodiment] A third embodiment of the present invention will be described. FIG. 3 is a process sectional view showing the features of the method for forming a bump electrode of a semiconductor device according to the third embodiment of the present invention. In FIG. 3, reference numeral 11 denotes a prism, 1
2 is a light receiving element.
【００２４】この第３の実施の形態では、第１の実施の
形態あるいは第２の実施の形態におけるレーザー光９を
照射する工程において、Ａｌ電極１上に形成される膜か
らのレーザー光９の反射光をプリズム１１を介して受光
素子１２で測定することにより、Ａｌ電極１上に形成さ
れる膜の高さを測定し、突起電極の高さを制御するよう
にしている。なお、プリズム１１および受光素子１２
は、めっき液等の液面よりも上方に位置している。In the third embodiment, in the step of irradiating the laser beam 9 in the first embodiment or the second embodiment, the laser beam 9 from the film formed on the Al electrode 1 is used. By measuring the reflected light with the light receiving element 12 via the prism 11, the height of the film formed on the Al electrode 1 is measured, and the height of the protruding electrode is controlled. The prism 11 and the light receiving element 12
Is located above the level of the plating solution or the like.
【００２５】例えば、図３では、Ｎｉ膜６を形成する際
に、レーザー源８より照射されたレーザー光９が、プリ
ズム１１を透過してＡｌ電極上１のＮｉ膜６に到達す
る。このＮｉ膜６の表面で反射したレーザー光９がプリ
ズム１１で反射され受光素子１２に到達する。この受光
素子１２に到達したレーザー光９の受光量により、無電
解めっきにより析出したＮｉ膜６の高さの測定を行う。
これは、めっき開始時のめっき面からのレーザー光９の
反射光の受光量を基準にして、常に一定の受光量となる
ように受光素子１２が移動した距離を測定することによ
り、高さの測定を行う。この測定値を見ながら形成され
るＮｉ膜６の高さを制御する。また、Ａｕ膜７（図１，
図２参照）の形成中においても同様にして高さを制御
し、最終的な突起電極の高さを精度の高いものとするこ
とができる。なお、Ｎｉ粒子膜５を形成する際にも同様
に高さを測定しながら制御してもよい。For example, in FIG. 3, when the Ni film 6 is formed, the laser light 9 emitted from the laser source 8 passes through the prism 11 and reaches the Ni film 6 on the Al electrode 1. The laser light 9 reflected on the surface of the Ni film 6 is reflected by the prism 11 and reaches the light receiving element 12. The height of the Ni film 6 deposited by electroless plating is measured based on the amount of the laser light 9 that has reached the light receiving element 12.
This is because the height of the height is measured by measuring the distance that the light receiving element 12 has moved so that the light receiving amount is always constant with reference to the amount of reflected light of the laser light 9 from the plating surface at the start of plating. Perform the measurement. The height of the formed Ni film 6 is controlled while observing the measured values. The Au film 7 (FIG. 1,
The height can be controlled in the same manner even during the formation of (see FIG. 2), and the final height of the protruding electrode can be made highly accurate. When forming the Ni particle film 5, the height may be measured and controlled in the same manner.
【００２６】この第３の実施の形態によれば、第１ある
いは第２の実施の形態の効果に加え、突起電極を形成中
に、突起電極を構成する膜の高さを測定することによ
り、無電解めっきによる突起電極の析出量を制御して高
さ精度の高い突起電極を形成することができる。なお、
第１，第２，第３の実施の形態では、レーザー光源８と
してアルゴンレーザーを使用したが、これに限られるも
のではなく、二酸化炭素レーザー、ＹＡＧレーザー、ガ
ラスレーザー、ヘリウム・ネオンレーザー、Ｃｕイオン
レーザー、クリプトンレーザー、半導体レーザー、エキ
シマレーザー、色素レーザー等を使用してもよい。According to the third embodiment, in addition to the effects of the first and second embodiments, the height of the film constituting the projecting electrode is measured during the formation of the projecting electrode. By controlling the amount of deposition of the projecting electrode by electroless plating, a projecting electrode with high height accuracy can be formed. In addition,
In the first, second, and third embodiments, an argon laser is used as the laser light source 8, but the present invention is not limited to this, and a carbon dioxide laser, a YAG laser, a glass laser, a helium-neon laser, a Cu ion Lasers, krypton lasers, semiconductor lasers, excimer lasers, dye lasers and the like may be used.
【００２７】[0027]
【発明の効果】本発明の半導体装置の突起電極形成方法
は、無電解めっき液に浸漬した半導体装置のＡｌ電極上
にレーザー光を照射して突起電極となる金属膜を形成す
ることにより、レーザー光を照射したＡｌ電極付近のみ
の無電解めっき液が加熱されて、無電界めっき反応が進
行して突起電極が形成されるため、レーザー光を照射し
ないＡｌ電極上には突起電極は形成されず、容易に突起
電極を必要とするＡｌ電極上にのみ突起電極を形成する
ことができるとともに、無電解めっき液は突起電極の形
成付近のみが局部加熱されるため、無電解めっき液の劣
化を抑制することができる。According to the method of forming a bump electrode of a semiconductor device of the present invention, a laser beam is irradiated on an Al electrode of a semiconductor device immersed in an electroless plating solution to form a metal film to be a bump electrode. Since the electroless plating solution only near the irradiated Al electrode is heated and the electroless plating reaction proceeds to form a protruding electrode, no protruding electrode is formed on the Al electrode that is not irradiated with laser light. In addition to being able to easily form a protruding electrode only on an Al electrode that requires a protruding electrode, the electroless plating solution is locally heated only in the vicinity of the formation of the protruding electrode, thereby suppressing deterioration of the electroless plating solution. can do.
【００２８】さらに、形成すべき突起電極と対応する位
置にレーザー光の透過孔を設けたマスクを用いて、レー
ザー光をマスク上から透過孔を介してＡｌ電極上に照射
することにより、レーザー光を照射しながらレーザー光
を移動させても、突起電極を形成しないＡｌ電極等のマ
スクの透過孔に対応していない半導体装置上の領域には
レーザー光が照射されず、突起電極を必要とするＡｌ電
極上にのみ順次連続的に照射して突起電極を形成するこ
とができるため、処理時間を短縮することができる。Further, by using a mask provided with a laser light transmission hole at a position corresponding to the projecting electrode to be formed, the laser light is irradiated from above the mask onto the Al electrode through the transmission hole. Even if the laser beam is moved while irradiating the laser beam, a region on the semiconductor device that does not correspond to the transmission hole of the mask such as an Al electrode that does not form a projection electrode is not irradiated with the laser beam, and a projection electrode is required. Since the projection electrode can be formed by sequentially and continuously irradiating only the Al electrode, the processing time can be shortened.
【００２９】また、半導体装置のＡｌ電極上へのレーザ
ー光の照射中に、形成される突起電極の高さを測定し、
この測定値が所望の値となるように突起電極の析出量を
制御することにより、高さ精度の高い突起電極を形成す
ることができる。Further, during the irradiation of the Al electrode of the semiconductor device with the laser beam, the height of the projection electrode formed is measured,
By controlling the deposition amount of the protruding electrode so that the measured value becomes a desired value, a protruding electrode with high height accuracy can be formed.
【図１】本発明の第１の実施の形態における半導体装置
の突起電極形成方法を示す工程断面図である。FIG. 1 is a process sectional view illustrating a method for forming a bump electrode of a semiconductor device according to a first embodiment of the present invention.
【図２】本発明の第２の実施の形態における半導体装置
の突起電極形成方法の特徴点を示す工程断面図である。FIG. 2 is a process cross-sectional view showing a feature of a method for forming a bump electrode of a semiconductor device according to a second embodiment of the present invention.
【図３】本発明の第３の実施の形態における半導体装置
の突起電極形成方法の特徴点を示す工程断面図である。FIG. 3 is a process cross-sectional view showing a feature of a method for forming a bump electrode of a semiconductor device according to a third embodiment of the present invention.
【図４】突起電極を有する従来の半導体装置の断面図で
ある。FIG. 4 is a cross-sectional view of a conventional semiconductor device having a protruding electrode.
【図５】従来の半導体装置の突起電極形成方法を示す工
程断面図である。FIG. 5 is a process sectional view showing a method for forming a bump electrode of a conventional semiconductor device.
１ Ａｌ電極 ２ 自然酸化膜 ３ 半導体装置 ４ 保護膜 ５ Ｎｉ粒子膜 ６ Ｎｉ膜 ７ Ａｕ膜 ８ レーザー光源 ９ レーザー光 １０ マスク １１ プリズム １２ 受光素子 DESCRIPTION OF SYMBOLS 1 Al electrode 2 Natural oxide film 3 Semiconductor device 4 Protective film 5 Ni particle film 6 Ni film 7 Au film 8 Laser light source 9 Laser beam 10 Mask 11 Prism 12 Light receiving element
Claims (3)
ｌ電極上に金属膜からなる突起電極を形成する半導体装
置の突起電極形成方法であって、 無電解めっき液に浸漬した前記半導体装置のＡｌ電極上
にレーザー光を照射して前記突起電極となる金属膜を形
成することを特徴とする半導体装置の突起電極形成方
法。1. A method of manufacturing a semiconductor device using an electroless plating method.
1. A method of forming a protruding electrode of a semiconductor device, comprising forming a protruding electrode made of a metal film on an electrode, wherein the protruding electrode is formed by irradiating a laser beam onto an Al electrode of the semiconductor device immersed in an electroless plating solution. A method for forming a bump electrode of a semiconductor device, comprising forming a metal film.
ーザー光の透過孔を設けたマスクを用いて、レーザー光
を前記マスク上から前記透過孔を介してＡｌ電極上に照
射する請求項１記載の半導体装置の突起電極形成方法。2. A laser beam is irradiated from above the mask onto the Al electrode through the transmission hole, using a mask having a laser light transmission hole provided at a position corresponding to the projection electrode to be formed. The method for forming a bump electrode of a semiconductor device according to the above.
の照射中に、形成される突起電極へのレーザー光の入射
光と前記突起電極の表面からのレーザー光の反射光との
光路差により前記突起電極の高さを測定し、この測定値
が所望の値となるように前記突起電極を形成する請求項
１または２記載の半導体装置の突起電極形成方法。3. A laser device according to claim 1, wherein the laser beam is irradiated on the Al electrode of the semiconductor device by an optical path difference between the incident light of the laser beam on the formed protruding electrode and the reflected light of the laser beam from the surface of the protruding electrode. 3. The method according to claim 1, wherein the height of the bump electrode is measured, and the bump electrode is formed such that the measured value is a desired value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05577697A JP3307850B2 (en) | 1997-03-11 | 1997-03-11 | Method for forming bump electrode of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05577697A JP3307850B2 (en) | 1997-03-11 | 1997-03-11 | Method for forming bump electrode of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10256257A true JPH10256257A (en) | 1998-09-25 |
| JP3307850B2 JP3307850B2 (en) | 2002-07-24 |
Family
ID=13008297
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|---|---|---|---|
| JP05577697A Expired - Fee Related JP3307850B2 (en) | 1997-03-11 | 1997-03-11 | Method for forming bump electrode of semiconductor device |
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| Country | Link |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005060634A3 (en) * | 2003-12-15 | 2006-02-16 | California Inst Of Techn | Method and system for forming a film of material using plasmon assisted chemical reactions |
| US7998538B2 (en) | 2003-12-15 | 2011-08-16 | California Institute Of Technology | Electromagnetic control of chemical catalysis |
-
1997
- 1997-03-11 JP JP05577697A patent/JP3307850B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005060634A3 (en) * | 2003-12-15 | 2006-02-16 | California Inst Of Techn | Method and system for forming a film of material using plasmon assisted chemical reactions |
| US7504136B2 (en) | 2003-12-15 | 2009-03-17 | California Institute Of Technology | Method and system for forming a film of material using plasmon assisted chemical reactions |
| US7998538B2 (en) | 2003-12-15 | 2011-08-16 | California Institute Of Technology | Electromagnetic control of chemical catalysis |
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