JPH033551B2 - - Google Patents
Info
- Publication number
- JPH033551B2 JPH033551B2 JP58213931A JP21393183A JPH033551B2 JP H033551 B2 JPH033551 B2 JP H033551B2 JP 58213931 A JP58213931 A JP 58213931A JP 21393183 A JP21393183 A JP 21393183A JP H033551 B2 JPH033551 B2 JP H033551B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- plating
- solution
- laser beam
- base material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000012545 processing Methods 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000007747 plating Methods 0.000 description 23
- 238000000034 method Methods 0.000 description 16
- 239000000463 material Substances 0.000 description 15
- 239000007788 liquid Substances 0.000 description 13
- 230000007547 defect Effects 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 238000012937 correction Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000002950 deficient Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000000866 electrolytic etching Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- -1 etc.) (for example Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
- B23K26/1462—Nozzles; Features related to nozzles
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、金属、半導体、絶縁物等の加工装置
に係り、特に、微細パターン形成、微細パターン
修正に好適なレーザ加工装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a processing apparatus for metals, semiconductors, insulators, etc., and particularly to a laser processing apparatus suitable for forming and modifying fine patterns.
従来、金属あるいは半導体、絶縁物等に微細パ
ターンを形成する方法としては様々なものが挙げ
られる。
Conventionally, there are various methods for forming fine patterns on metals, semiconductors, insulators, and the like.
プリント基板に例をとれば、通常ガラス布に樹
脂を含浸硬化させた絶縁板の片面又は両面に銅箔
をはりつけ、この銅箔をホトエツチング法により
配線パターンに形成していた。この方法にはホト
エツチングに多くの過程を必要とするという欠点
があつた。 For example, in the case of printed circuit boards, copper foil is usually pasted on one or both sides of an insulating plate made of glass cloth impregnated with resin and cured, and the copper foil is formed into a wiring pattern by photo-etching. This method had the disadvantage of requiring many photoetching steps.
又、パターンのピンホールや断線の修正方法と
して、プリント基板に例をとれば、第１図，第２
図に示すように基材１（ガラスエポキシやガラス
ポリイミド等）上に形成された金属パターン２
（例えば銅）の断線欠陥ａ部を補修ワイヤ３でイ，
ロ部を溶接することにより、電気的な接続を確保
していた。この方法では、補修ワイヤ３の金属パ
ターン２への位置合せが必要で、また、位置合せ
後微細部分の溶接が必要であり、電極との位置合
せや接続時の加熱によるパターン劣化が問題であ
つた。その他接続時の修正箇所の突出寸法Ｈが積
層板を構成する際の障害条件となつており、Ｈを
著しく小さく、例えば、50μ以下に押える必要が
あつた。又、パターン残りの修正方法として第３
図に示すように基材１上に形成された金属パター
ン２（例えば銅）の残り部分ｂ部をトーンナイフ
で機械的に除去していた。この方法では修正時に
パターンの欠落、破砕、亀裂、その他の劣化を生
じやすいという欠点があつた。 In addition, as an example of how to correct pattern pinholes and wire breaks, if we take a printed circuit board as an example,
As shown in the figure, a metal pattern 2 formed on a base material 1 (glass epoxy, glass polyimide, etc.)
(for example, copper), repair the disconnection defect at part a with the repair wire 3,
Electrical connection was secured by welding the bottom part. In this method, it is necessary to align the repair wire 3 with the metal pattern 2, and it is also necessary to weld fine parts after alignment, and pattern deterioration due to alignment with the electrode and heating during connection is a problem. Ta. In addition, the protruding dimension H of the repaired portion during connection has become an obstacle when constructing a laminate, and it has been necessary to keep H extremely small, for example, 50μ or less. In addition, the third method for correcting the remaining pattern is
As shown in the figure, the remaining portion b of the metal pattern 2 (for example, copper) formed on the base material 1 was mechanically removed using a tone knife. This method has the disadvantage that patterns are likely to be missing, fractured, cracked, or otherwise deteriorated during correction.
又、従来技術ではパターンがさらに高密度化さ
れ、具体的にはパターン巾100μｍ以下になると、
精度上パターン修正方法として適応出来なくなる
という問題がある。 In addition, in the conventional technology, when the pattern becomes more dense, specifically when the pattern width becomes 100 μm or less,
There is a problem in that it cannot be applied as a pattern correction method due to accuracy.
ところで、最近、特開昭55−148797に示される
ような、レーザ照射部のみに選択メツキあるいは
エツチングが施される技術について報告がなされ
ている。この技術は、微細パターン形成やパター
ン修正に応用可能なものと考えられる。 Incidentally, recently, a technique has been reported in which selective plating or etching is applied only to the laser irradiated area, as shown in Japanese Patent Laid-Open No. 55-148797. This technique is considered to be applicable to fine pattern formation and pattern modification.
しかし、これらの技術は、単に微細加工の方法
としてのみ述べられており、微細パターン形成装
置、修正装置として利用することについては何
ら、述べられていない。 However, these techniques are only described as a method of microfabrication, and there is no mention of their use as a micropattern forming device or a modification device.
特開昭55−148757に挙げられた従来技術では、
第４図に示すように、ビーム８はメツキ液５中に
そのまま入射されているが、この方法では液の撹
拌、ビームの入射等に際しての、水面の高さの変
化や水面の屈折率の変化に対する考慮は何らはら
われていない。従つてビーム８が基材１上で常に
焦点を結んでいるとは限らず、微細パターン形成
修正装置として利用する上で障害になるものと考
えられる。 In the conventional technology listed in Japanese Patent Application Laid-Open No. 55-148757,
As shown in FIG. 4, the beam 8 is directly incident into the plating liquid 5, but in this method, changes in the height of the water surface and changes in the refractive index of the water surface occur when the liquid is stirred, the beam is incident, etc. No consideration was given to this. Therefore, the beam 8 is not always focused on the base material 1, which is considered to be an obstacle to use as a fine pattern forming and correcting device.
本発明の目的は、レーザビームが溶液中に入射
する際の位置ずれを防ぐことが可能な、微細パタ
ーン形成、修正装置を提供するにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a fine pattern forming and modifying apparatus that can prevent positional deviation when a laser beam enters a solution.
本発明の特徴は、溶液中で、被加工物にパター
ン形成・修正等の処理を施すに際し、レーザビー
ムを透過する部分を有するレーザビームのスポツ
トより充分大きいカバーを用いて、溶液の液面レ
ベルを押し下げ、カバーをレーザビームが入射さ
れる溶液面と接するように配置することにより、
溶液面を一定としたことにある。
A feature of the present invention is that when performing processing such as pattern formation or correction on a workpiece in a solution, the liquid level of the solution is leveled by using a cover that is sufficiently larger than the laser beam spot and has a portion that transmits the laser beam. By pressing down and positioning the cover so that it is in contact with the solution surface where the laser beam is incident,
The reason is that the solution surface is kept constant.
本発明の一実施例を第５図を参照して説明す
る。
An embodiment of the present invention will be described with reference to FIG.
セラミツク基板である基材１をメツキ液５（例
えば無電解銅めつき液）中に入れる。レーザビー
ムの発射熱６より出たビーム８は集光レンズ７を
介して被加工物上へ集光させられる。ただし、ビ
ーム８のエネルギ密度は基材にメツキする密度以
下、具体的には102W／cm2以下とする。ここでビ
ーム８が走査され、基材上に走査どうりに所望の
パターンが形成される。メツキ液５は、ビーム８
を透過するカバー１３でおおわれている。従つ
て、水面状態は常に一定であり、カバー１３がな
い場合のように、かくはんやビーム照射による水
面の高さの変化や、水面の波立ちによる屈折率の
変化を考慮する必要がないので、焦点ぼけが生じ
ない。さらに、カバー１３のかたちを図のように
コの字型にすることにより、ビームが透過する溶
液中の長さｌを最小にし、しかも、側面から矢印
Ｓのように液の補給が可能である。尚、ここで、
溶液中のビームの透過する長さｌが短いというこ
とは、溶液によるビームの吸収が少ないことを示
し、又、側面から液の補給が成されるということ
は、加工速度が速くなることを示しており、どち
らも加工効率に大きく寄与する。 A base material 1, which is a ceramic substrate, is placed in a plating solution 5 (for example, an electroless copper plating solution). A beam 8 emitted from the emitted heat 6 of the laser beam is focused onto the workpiece via a condenser lens 7. However, the energy density of the beam 8 is below the density of plating the base material, specifically below 10 2 W/cm 2 . Here, the beam 8 is scanned and a desired pattern is formed on the substrate as scanned. The plating liquid 5 is the beam 8
It is covered with a cover 13 that allows the light to pass through. Therefore, the water surface condition is always constant, and there is no need to take into account changes in the height of the water surface due to stirring or beam irradiation, or changes in the refractive index due to ripples on the water surface, unlike in the case without the cover 13. No blurring occurs. Furthermore, by making the cover 13 U-shaped as shown in the figure, the length l in the solution through which the beam passes can be minimized, and moreover, the solution can be replenished from the side as shown by arrow S. . Furthermore, here,
A short beam transmission length l in the solution indicates that the absorption of the beam by the solution is small, and the fact that the liquid is replenished from the side indicates that the processing speed becomes faster. Both contribute significantly to processing efficiency.
又、この時、液面レベルは、水面Ｌより高い位
置Ｈに設定される。 Also, at this time, the liquid level is set at a position H higher than the water level L.
尚、ビーム８を走査せずに基材１をのせたメツ
キケース４がステージによつて動かされてもよ
い。 Note that the plating case 4 on which the base material 1 is placed may be moved by the stage without scanning the beam 8.
本発明の他の実施例を第６図を参照して説明す
る。第６図が第５図と異なる点は、ビーム８がパ
ターンの修正に利用される点である。該当する断
線欠陥ａ部を持つプリント基板をメツキ液５（例
えば、無電解銅メツキ液）中に入れる。次に、レ
ーザビームの発射源６より出たビーム８は集光レ
ンズ７を介して欠陥ａ部へ集光させられ、断線部
は局部メツキで充填される。メツキ液５は、ビー
ム８を透過するカバー１３で水平面および表面寸
法が正確に設定される。カバー１３はビーム８が
Ar，YAGレーザ等の場合は、石英ガラス等を利
用する。また、基材１の欠陥ａ部の裏面はケース
４と接触して配置される。本発明の他の実施例を
第７図を参照して説明する。第６図が第５図と異
なるのは、欠陥ａ部の周辺のみを局部ケース９で
囲んだメツキ液５に浸し、ビーム８を集光させる
点である。ゴムパツド１０で液もれを防止する。
又ビームの位置合せを正確に確保するため、基材
１の曲がりやそり等を防止する手段として第７図
に示す真部ポンプ等で排気する排気孔１２をもつ
た固定台１１上に基材１を配置し、ビーム８の垂
平方向の位置ずれを防止する。 Another embodiment of the invention will be described with reference to FIG. The difference between FIG. 6 and FIG. 5 is that the beam 8 is used to modify the pattern. The printed circuit board having the corresponding disconnection defect at section a is placed in plating solution 5 (for example, electroless copper plating solution). Next, the beam 8 emitted from the laser beam source 6 is focused on the defect a portion via the condenser lens 7, and the broken portion is filled with local plating. The horizontal plane and surface dimensions of the plating liquid 5 are precisely set by the cover 13 through which the beam 8 passes. Cover 13 has beam 8
For Ar, YAG lasers, etc., use quartz glass, etc. Further, the back surface of the defective portion a of the base material 1 is placed in contact with the case 4 . Another embodiment of the invention will be described with reference to FIG. The difference between FIG. 6 and FIG. 5 is that only the periphery of the defect a is immersed in the plating liquid 5 surrounded by a local case 9, and the beam 8 is focused. Rubber pad 10 prevents liquid leakage.
In addition, in order to ensure accurate alignment of the beam, the base material 1 is placed on a fixed base 11 having an exhaust hole 12 for evacuation using a true pump or the like as shown in FIG. 7 as a means to prevent the base material 1 from bending or warping. 1 to prevent the beam 8 from shifting in the vertical direction.
本実施例ではメツキ液５を欠陥ａ部側のみに配
置してある。これは基材１の裏面側にビーム８の
透過で析出するメツキを防止することをねらつて
いる。本方法で欠陥ａが長い寸法で発生している
場合は、ビーム８を走査させる方法を用いる。こ
の場合、ビーム８をスキヤンさせる方式、基材１
側、又は、メツキ液ケース全体を移動させる方式
いずれでもかまわない。 In this embodiment, the plating liquid 5 is placed only on the defect a side. This is aimed at preventing plating deposited on the back side of the base material 1 due to the transmission of the beam 8. In this method, if the defect a has a long dimension, a method of scanning the beam 8 is used. In this case, the method of scanning the beam 8, the base material 1
Either side or the entire plating liquid case may be moved.
本発明の他の実施例を第８図を参照して説明す
る。第８図が第５図と異なるのは、パターンの欠
陥ｂ部がパターン残りである点である。 Another embodiment of the invention will be described with reference to FIG. The difference between FIG. 8 and FIG. 5 is that the defective part b of the pattern is the remainder of the pattern.
該当するパターン残りｂ部を持つプリント基板
を、エツチング液１４（例えば、塩酸硝酸混液）
中に入れる。次に、レーザビームの発射源６より
出たビーム８は集光レンズ７を介してパターン残
りｂ部へ集光させられ、パターン残りは局部エツ
チングで除去される。 The printed circuit board with the remaining portion b of the corresponding pattern is etched with an etching solution 14 (for example, a mixture of hydrochloric acid and nitric acid).
insert. Next, the beam 8 emitted from the laser beam source 6 is focused on the remaining part b of the pattern via the condenser lens 7, and the remaining part of the pattern is removed by local etching.
本発明の他の実施例を第９図を参照して説明す
る。該当する断線欠陥ａ部を持つプリント基板
を、メツキ液５中に入れる。次に、レーザビーム
の発射源６より出た、ビーム８は集光レンズ７を
介し、パターン２上に走査される。ここでビーム
８はパターン表面で、パターン２の線巾又はそれ
以下の直径をもつ。パターン２の表面で反射した
光はプリズム１９を経て反射光検出器１６により
検知され、電気信号に変換され、増幅器１７を介
して制御部１８に送られる。この時のビーム８の
出力密度は、めつき反応が起きる限界出力密度以
下、具体的には102W／cm2以下とする。 Another embodiment of the invention will be described with reference to FIG. The printed circuit board having the corresponding disconnection defect at part a is placed in plating liquid 5. Next, the beam 8 emitted from the laser beam source 6 is scanned onto the pattern 2 via a condenser lens 7. Here, the beam 8 is the surface of the pattern and has a diameter that is equal to or smaller than the line width of the pattern 2. The light reflected on the surface of the pattern 2 passes through the prism 19 and is detected by the reflected light detector 16, converted into an electrical signal, and sent to the control unit 18 via the amplifier 17. The power density of the beam 8 at this time is below the critical power density at which plating reaction occurs, specifically below 10 2 W/cm 2 .
パターン２が無欠陥の場合、ビーム８は、パタ
ーン２上を一定の速さで走査するが、例えば、ａ
部のような断線を生じている場合、反射光検出器
１６は、反射光強度の変化を認識する。制御部２
０はこの情報によりメツキ条件を選び、レーザビ
ーム発生装置６からこの条件でメツキする。 If the pattern 2 is defect-free, the beam 8 scans over the pattern 2 at a constant speed, for example a
If a disconnection occurs, the reflected light detector 16 recognizes the change in the intensity of the reflected light. Control part 2
0 selects plating conditions based on this information, and performs plating from the laser beam generator 6 under these conditions.
基材１がビーム８を透過する場合には反射光を
用いず、透過光でパターンを認識させてもよい。
この時、基材１の下に透過光検出器１５が固定さ
れる。 When the base material 1 transmits the beam 8, the pattern may be recognized using transmitted light without using reflected light.
At this time, a transmitted light detector 15 is fixed under the base material 1.
ビーム８は、走査されずに静止していてもよ
い。この場合、基材１、もしくは、メツキケース
４がステージによつて動かされる。 The beam 8 may be stationary without being scanned. In this case, the base material 1 or the plating case 4 is moved by the stage.
以上の実施例では、溶液５を無電解メツキ液及
び無電解エツチング液を用いて説明したが、電気
メツキか電気エツチングが可能な場合には、それ
らを用いてもかまわない。 In the above embodiments, an electroless plating solution and an electroless etching solution were used as the solution 5, but if electroplating or electroetching is possible, they may be used.
ビーム８はレーザを用いる場合、該当する溶液
の吸収波長帯を持たないレーザ種を選定し局部メ
ツキ箇所のみ加熱する方法が有効である。 When using a laser as the beam 8, it is effective to select a laser type that does not have the absorption wavelength band of the corresponding solution and heat only the local plating location.
本発明によれば、被加工物に微細パターン形
成・修正を施こすに際し、レーザビームが溶液中
に入射する際の位置ずれを防ぐことができる。
According to the present invention, when forming or modifying a fine pattern on a workpiece, it is possible to prevent positional shift when a laser beam enters a solution.
第１図は、断線欠陥ａ部を有する対象プリント
基板を説明する従来の平面図、第２図は、第１図
の−矢視断面図、第３図は、パターン残りｂ
部を有する対象プリント基板を説明する従来方法
の平面図、第４図は、ビームの照射部分のみに選
択的にメツキを施こす従来方法、第５図は、任意
のパターンを形成する装置を示した本発明の第１
の実施例図、第６図はパターン修正技術のうち断
線部を充填する装置を示した本発明の第２の実施
例図、第７図は欠陥個所の周辺のみが排気口を有
する固定台に配置されている装置を示した本発明
の第３の実施例図、第８図はパターン修正技術の
うちパターン残りを除去する装置を示す本発明の
第４の実施例図、第９図はビームがパターン修正
前にパターン欠陥個所を検知する装置を示す本発
明の第５の実施例図である。
１…基材、４…ケース、５…めつき液、６…レ
ーザビーム発射源、７…集光レンズ、８…ビー
ム、１３…カバ。
FIG. 1 is a conventional plan view illustrating a target printed circuit board having a disconnection defect at section a, FIG. 2 is a sectional view taken along the - arrow in FIG.
FIG. 4 is a plan view of a conventional method for explaining a target printed circuit board having a part, and FIG. 5 shows a conventional method of selectively plating only the beam irradiated area. The first aspect of the present invention
FIG. 6 is a second embodiment of the present invention showing a device for filling broken wires in the pattern correction technique, and FIG. 7 is a fixing table with exhaust ports only around the defective area FIG. 8 is a diagram showing a fourth embodiment of the present invention showing a device for removing the remaining pattern in the pattern correction technique; FIG. 9 is a diagram showing a beam FIG. 5 is a diagram showing a fifth embodiment of the present invention, showing an apparatus for detecting a pattern defect location before pattern correction; DESCRIPTION OF SYMBOLS 1... Base material, 4... Case, 5... Plating liquid, 6... Laser beam emission source, 7... Condensing lens, 8... Beam, 13... Cover.
Claims (1)
物に処理を施すための溶液を収容するケースと、 前記溶液の液面レベルを押し下げ前記レーザビ
ームが入射される溶液面と接するように配置さ
れ、前記レーザビームを透過する部分を有し、前
記レーザビームのスポツトより充分大きいカバー
と、 を有することを特徴とするレーザ加工装置。[Claims] 1: a laser beam emission source; a case containing a solution for treating a workpiece by irradiating the laser beam; A laser processing apparatus comprising: a cover disposed so as to be in contact with an incident solution surface, having a portion through which the laser beam is transmitted, and having a cover that is sufficiently larger than the spot of the laser beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58213931A JPS60106689A (en) | 1983-11-16 | 1983-11-16 | Laser working device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58213931A JPS60106689A (en) | 1983-11-16 | 1983-11-16 | Laser working device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60106689A JPS60106689A (en) | 1985-06-12 |
| JPH033551B2 true JPH033551B2 (en) | 1991-01-18 |
Family
ID=16647409
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58213931A Granted JPS60106689A (en) | 1983-11-16 | 1983-11-16 | Laser working device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60106689A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0230393A (en) * | 1988-07-19 | 1990-01-31 | Fujita Corp | Safety device for absorbing irradiated laser beams |
| CN106181078A (en) * | 2016-07-19 | 2016-12-07 | 武汉华工激光工程有限责任公司 | A kind of water-cooled jig device and using method thereof |
| JP2018040033A (en) * | 2016-09-07 | 2018-03-15 | 株式会社スギノマシン | Metal nanocolloid generation method by laser ablation |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59225896A (en) * | 1983-06-06 | 1984-12-18 | Semiconductor Energy Lab Co Ltd | Laser working method |
-
1983
- 1983-11-16 JP JP58213931A patent/JPS60106689A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59225896A (en) * | 1983-06-06 | 1984-12-18 | Semiconductor Energy Lab Co Ltd | Laser working method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60106689A (en) | 1985-06-12 |
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