JPH08264683A - 樹脂モールド被覆を備えた半導体デバイス及びその製造方法 - Google Patents

樹脂モールド被覆を備えた半導体デバイス及びその製造方法

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Publication number
JPH08264683A
JPH08264683A JP8083046A JP8304696A JPH08264683A JP H08264683 A JPH08264683 A JP H08264683A JP 8083046 A JP8083046 A JP 8083046A JP 8304696 A JP8304696 A JP 8304696A JP H08264683 A JPH08264683 A JP H08264683A
Authority
JP
Japan
Prior art keywords
semiconductor chip
semiconductor device
mold coating
resin mold
metal electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8083046A
Other languages
English (en)
Other versions
JP2930904B2 (ja
Inventor
Herbert Brunner
ブルンナー ヘルベルト
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPH08264683A publication Critical patent/JPH08264683A/ja
Application granted granted Critical
Publication of JP2930904B2 publication Critical patent/JP2930904B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

(57)【要約】 【課題】 半導体チップを備え、その半導体チップ表面
の少なくとも一部が樹脂モールド被覆に接している半導
体デバイスにおいて、半導体チップと樹脂モールド被覆
との間の接着力を高める。 【解決手段】 半導体チップ２の表面と樹脂モールド被
覆８との間に極小歯構造５を設ける。

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】この発明は、少なくとも１つ
の金属電極を備えた半導体チップに樹脂モールド被覆が
接している半導体デバイスに関する。
【０００２】
【従来の技術】このような半導体デバイスは例えばドイ
ツ連邦共和国特許出願公開第４３２７１３３号明細書に
より公知である。この明細書には、発光ダイオードが光
透過性の樹脂モールド被覆を介して光検出半導体チップ
と光結合されている半導体デバイスが記載されている。
光透過性の樹脂モールド被覆は発光ダイオード及び光検
出半導体チップの表面に直接設けられている。
【０００３】例えばエポキシ樹脂のような公知のモール
ド被覆樹脂と半導体材料の熱膨張率は非常に異なってい
る（例えば、αth（エポキシ樹脂）＝６０〜２００＊１
０-6Ｋ-1、αth（ＧａＡｓ）＝６＊１０-6Ｋ-1、α
th（Ｓｉ）＝２．５＊１０-6Ｋ-1）。従って、通常、半
導体デバイスの使用中に生ずる温度変動の際半導体デバ
イスには機械的な応力が発生する。時間の経過とともに
この機械的応力負荷、従ってこれに伴う半導体チップと
モールド樹脂との間の境界面におけるせん断応力により
樹脂モールド被覆が半導体チップから剥離することがあ
る。樹脂モールド被覆の剥離はしかしながら多くの場合
半導体デバイスの機能特性の明らかな劣化をもたらす。
例えば光信号を送信及び／又は受信するための半導体デ
バイスにおいては半導体チップからの樹脂モールド被覆
の剥離は著しい光損失を招く。
【０００４】従って、半導体チップと樹脂モールド被覆
との間の接着強度を高める対策が必要となる。
【０００５】半導体チップと樹脂モールド被覆との間の
接着強度を高めるための公知の対策としては、 ・樹脂モールド被覆材料の熱膨張率を適合させる、 ・半導体表面を、例えばプラズマ浄化により活性化す
る、 ・半導体チップと樹脂モールド被覆との間に中間層を設
ける、 等の方法がある。
【０００６】例えばエポキシ樹脂のような樹脂モールド
被覆材料の熱膨張率を適当に整合させることは、従来、
充填材を添加することによって行われていた。公知の充
填材は金属粉末、金属酸化物、金属炭酸塩及び金属珪酸
塩である。しかしこのような充填材は熱膨張率の他に樹
脂モールド被覆材料の光透過性をも損なうので、このよ
うな充填材の使用はこれらの特性が余り重要でない役割
を果たしている場合にしか可能でない。
【０００７】また、半導体表面を活性化すること或いは
半導体表面と樹脂モールド被覆との間に接着仲介層とし
て中間層を設けることも、このために付加的な面倒な工
程が必要であるという欠点を伴う。
【０００８】
【発明が解決しようとする課題】従って、本発明の課題
は、上述のような対策のいずれをも必要とせずに、半導
体チップと樹脂モールド被覆との間の接着力が大きい半
導体デバイスを開発することにある。
【０００９】
【課題を解決するための手段】この課題は、半導体チッ
プの表面の少なくとも金属電極によって覆われていない
部分領域が、半導体チップと樹脂モールド被覆との間に
極小歯構造を形成する粗面部を備えていることによって
解決される。
【００１０】このような極小歯構造によって、一方で
は、半導体チップの表面が樹脂モールド被覆に接してい
る面が増大される。他方では、極小歯構造は機械的応力
を半導体チップ及び樹脂モールド被覆の中に分散するよ
うに働く。この２つの要因により半導体チップ及び樹脂
モールド被覆の間の接触面におけるせん断応力の有効な
減少が達成される。
【００１１】
【実施例】この発明を図面に示す実施例を参照して詳細
に説明する。図１はこの発明による半導体デバイス、例
えば発光ダイオードの断面を示す。
【００１２】システム基板の接続導体片１に、その上面
及び下面にそれぞれ１つの金属電極３、４を備えた半導
体チップ２が配置されている。半導体チップ２は例えば
Ａｌx Ｇａ1-x Ａｓ、Ｉｎx Ｇａ1-x Ａｓ、Ｓｉ或いは
ＳｉＣからなる。金属電極３、４はアルミニウム、アル
ミニウムベース合金或いは他の非貴金属材料からなる。
半導体チップ２は金属電極３、４を備えていない表面に
例えばエッチングにより作られる歯構造５を備えてい
る。金属電極３は例えばＰｂ／Ｓｎろうにより接続導体
片１に電気的に接続されている。金属電極４はボンディ
ングワイヤ６、例えば金導線により接続導体片７に電気
的に接続されている。半導体チップ２、金属電極３、
４、ボンディングワイヤ６及び接続導体片１、７の部分
領域は光透過性の例えばエポキシ樹脂からなる樹脂モー
ルド被覆８により囲まれている。
【００１３】極小歯構造５により半導体チップ２への樹
脂モールド被覆８の接着強度が改善されるとともに、光
送信及び／又は受信半導体チップの場合、半導体チップ
２と樹脂モールド被覆８との間の境界面における全反射
損失が減少することにより光の結合及び／又は減結合も
改善される。
【００１４】上述の半導体デバイスの製造方法は例えば
以下の連続工程により行われる。 ａ）半導体チップ２、例えば発光ダイオード或いはフォ
トダイオードを製造する。 ｂ）金属電極３、４を例えば蒸着により形成する。 ｃ）極小歯構造５を例えば半導体チップ２の表面をエッ
チングすることにより形成する。 ｄ）金属電極３、４及び極小歯構造５を備えた半導体チ
ップ２を接続導体片１或いはシステム基板の島に、例え
ば接着或いはろう付けにより接合する。 ｅ）リード線６を金属電極４及び接続導体片７にボンデ
ィング接続する。 ｆ）極小歯構造５、金属電極３、４を備えた半導体チッ
プ２、リード線６及び接続導体片１、７の部分領域をモ
ールド樹脂で被覆する。このモールド樹脂での被覆は、
モールド樹脂が極小歯構造５の中に侵入し、この部分を
満たし次いで硬化するように行われる。これにより極小
歯構造５が半導体チップ２と樹脂モールド被覆８との間
に形成される。モールド被覆方法としては例えば射出成
形が使用される。
【００１５】極小歯構造５を、例えば１つ或いは複数の
Ａｌx Ｇａ1-x Ａｓの膜（０≦ｘ≦１）からなり、非貴
金属材料、例えばアルミニウム或いはアルミニウムベー
ス合金のような材料からなる金属電極３、４を備えた半
導体チップ２の上に形成する方法は、例えば次の連続工
程により行われる。 ａ）半導体チップ２の表面を、場合によっては市販の洗
剤を加えて、親水性の半導体表面を形成するために予備
洗浄する。 ｂ）半導体チップ２の表面を例えば硝酸（６５％）でエ
ッチングする。このときアルミニウムの含有量ｘに応じ
てエッチングのための温度及びエッチング時間を整合さ
せる必要がある。アルミニウムの含有量が０．３０≦ｘ
≦０．４に対してエッチング時間は温度２５±５℃のと
き例えば１５乃至３０秒である。
【００１６】さらに、極小歯構造５を、例えば１つ或い
は複数のＡｌx Ｇａ1-x Ａｓの膜（０≦ｘ≦０．４）か
らなり、非貴金属材料、例えばアルミニウム或いはアル
ミニウムベース合金のような材料からなる金属電極３、
４を備えた半導体チップ２の上に形成する他の方法は、
例えば次の連続工程を備える。 ａ）半導体チップ２を製造する。 ｂ）金属電極３、４を形成する。 ｃ）半導体チップ２の表面を、場合によっては市販の洗
剤を加えて、親水性の半導体表面を形成するために例え
ば水洗により予備洗浄する。 ｄ）過酸化水（≧３０％）及びフッ酸（≧４０％）から
なる混合エッチング液（１０００：６）で１乃至２．５
分間粗面化エッチングする。 ｅ）希釈鉱物酸、例えば硫酸（１５％）で、３５℃で１
乃至２分間再エッチングする。
【００１７】アルミニウムの含有量ｘに応じて粗面化エ
ッチングは温度及びエッチング時間を整合させる必要が
ある。
【図面の簡単な説明】
【図１】この発明による半導体デバイスの概略断面図。
【符号の説明】
１、７ システム基板の接続導体片 ２ 半導体チップ ３、４ 金属電極 ５ 極小歯構造 ６ リード線（ボンディングワイヤ） ８ 樹脂モールド被覆

Claims (4)

    【特許請求の範囲】
  1. 【請求項１】少なくとも１つの金属電極を備えた半導体
    チップに接する樹脂モールド被覆を備え、金属電極
    （３）によって覆われていない少なくとも１つの部分領
    域が、半導体チップ（２）と樹脂モールド被覆（８）と
    の間に極小歯構造（５）を形成する粗面部を備えている
    ことを特徴とする半導体デバイス。
  2. 【請求項２】金属電極（３）がアルミニウムを含むこと
    を特徴とする請求項１記載の半導体デバイス。
  3. 【請求項３】金属電極（３）がアルミニウムベース合金
    からなることを特徴とする請求項１又は２記載の半導体
    デバイス。
  4. 【請求項４】以下の工程、 ａ）半導体チップ（２）を製造する、 ｂ）金属電極（３、４）を形成する、 ｃ）半導体チップ（２）の表面に極小歯構造（５）を形
    成する、 ｄ）金属電極（３、４）及び極小歯構造（５）を備えた
    半導体チップ（２）をシステム基板の上に取りつける、 ｅ）１つ或いは複数本のリード線（６）を金属電極
    （３、４）及びシステム基板の接続導体片（１、７）に
    ボンディング接続する、 ｆ）半導体チップ（２）、金属電極（３、４）、リード
    線（６）、接続導体片（１、７）の部分領域及び少なく
    ともシステム基板の部分領域を、モールド樹脂が極小歯
    構造（５）に侵入してこれを満たして硬化するように、
    モールドする、 を含むことを特徴とする請求項１乃至３の１つに記載の
    半導体デバイスの製造方法。
JP8083046A 1995-03-15 1996-03-13 樹脂モールド被覆を備えた半導体デバイス及びその製造方法 Expired - Lifetime JP2930904B2 (ja)

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EP0732740A3 (de) 1998-09-16
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TW311269B (ja) 1997-07-21
US5742098A (en) 1998-04-21
EP0732740A2 (de) 1996-09-18
DE19509262C2 (de) 2001-11-29
CN1905169A (zh) 2007-01-31
DE19509262A1 (de) 1996-09-19
JP2930904B2 (ja) 1999-08-09

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