JPH0793281B2 - Wafer supporting apparatus for semiconductor wafer heat treatment apparatus and semiconductor wafer heat treatment apparatus - Google Patents
Wafer supporting apparatus for semiconductor wafer heat treatment apparatus and semiconductor wafer heat treatment apparatusInfo
- Publication number
- JPH0793281B2 JPH0793281B2 JP63087728A JP8772888A JPH0793281B2 JP H0793281 B2 JPH0793281 B2 JP H0793281B2 JP 63087728 A JP63087728 A JP 63087728A JP 8772888 A JP8772888 A JP 8772888A JP H0793281 B2 JPH0793281 B2 JP H0793281B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- supporting
- semiconductor wafer
- heat treatment
- treatment apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は拡散装置、CVD装置などの半導体ウエハ熱処理
装置のウエハ支持装置及び半導体ウエハ熱処理装置に関
する。Description: TECHNICAL FIELD The present invention relates to a wafer supporting apparatus for a semiconductor wafer heat treatment apparatus such as a diffusion apparatus and a CVD apparatus and a semiconductor wafer heat treatment apparatus.
従来の半導体ウエハ熱処理装置としては、特開昭60−17
1723号公報に記載のものが挙げられる。高温炉にウエハ
を挿入し、該ウエハを加熱する装置に於いて、ウエハ支
持装置はウエハを支持する支持部と、一端側に前記支持
部を有する支柱とを備えている。そして、支柱は中実の
棒を材料としたものであった。A conventional semiconductor wafer heat treatment apparatus is disclosed in JP-A-60-17.
Examples thereof include those described in Japanese Patent No. 1723. In a device for inserting a wafer into a high temperature furnace and heating the wafer, the wafer supporting device includes a supporting portion for supporting the wafer and a support having the supporting portion at one end side. And the pillar was made of a solid rod.
上記従来技術は支柱が中実の棒であると、その熱容量が
ウエハの熱容量よりも非常に大きいという点を考察して
いない。そのためウエハ支持装置を熱処理装置の高温炉
内に挿入した時に、ウエハ自身の温度上昇速度よりもウ
エハ支持装置の温度上昇速度が遅くなり、ウエハの該支
持装置に接触する部分及びその近傍のウエハ温度が他の
ウエハ面内温度より低温となるようなウエハ面内温度分
布にバラツキが生じるという問題があった。特に１〜３
枚のウエハに２〜３分間の短時間熱処理を行う場合に
は、デバイス特性及び結晶欠陥発生に過渡時の前記ウエ
ハ面内温度分布が大きく影響するという問題があった。The above-mentioned prior art does not consider that the heat capacity of the solid support rod is much larger than that of the wafer. Therefore, when the wafer support device is inserted into the high temperature furnace of the heat treatment apparatus, the temperature rise rate of the wafer support device becomes slower than the temperature rise rate of the wafer itself, and the temperature of the wafer in contact with the support device and the wafer temperature in the vicinity thereof However, there is a problem in that the temperature distribution in the wafer surface varies so that the temperature becomes lower than the other wafer surface temperatures. Especially 1-3
When heat treatment is performed on a single wafer for a short time of 2 to 3 minutes, there is a problem that the device temperature and the occurrence of crystal defects are greatly affected by the temperature distribution in the wafer surface during a transition.
本発明の目的は高温炉にてウエハを熱処理する際に、ウ
エハ面内を均一温度で熱処理し、結晶欠陥発生を防止で
きる、ウエハ支持装置及び半導体ウエハ熱処理装置を提
供することにある。An object of the present invention is to provide a wafer supporting apparatus and a semiconductor wafer heat treatment apparatus that can heat-treat a wafer in a high temperature furnace at a uniform temperature to prevent crystal defects from occurring.
上記目的を達成するため、本発明に係るウエハ支持装置
は、半導体ウエハを支持する支持部と、一端側に前記支
持部を有する支柱とを備えた半導体ウエハ熱処理装置の
ウエハ支持装置において、該ウエハ支持装置は石英ガラ
ス、ポリシリコン又はシリコンカーバイドにて形成され
ていると共に、前記支柱は中空状に形成されており、支
柱の肉厚は、ウエハ支持装置のうち熱処理装置の加熱部
に挿入されている部分の表面積と重量との比率を、半導
体ウエハ自身の表面積と重量との比率と略一致するよう
薄肉に設定されていることを特徴とするものである。In order to achieve the above object, a wafer supporting apparatus according to the present invention is a wafer supporting apparatus for a semiconductor wafer heat treatment apparatus, comprising: a supporting section for supporting a semiconductor wafer; and a support having the supporting section at one end side. The supporting device is made of quartz glass, polysilicon or silicon carbide, and the supporting column is formed in a hollow shape, and the wall thickness of the supporting column is determined by inserting it into the heating part of the heat treatment device of the wafer supporting device. It is characterized in that the ratio of the surface area to the weight of the existing portion is set to be thin so as to substantially match the ratio of the surface area to the weight of the semiconductor wafer itself.
また本願他の発明に係るウエハ支持装置は、半導体ウエ
ハを支持する支持部と、一端側に前記支持部を有する支
柱とを備えた半導体ウエハ熱処理装置のウエハ支持装置
において、前記支柱の断面はＳ字状、円弧形状、Ｘ字
状、コ字状、Ｈ字状、Ｌ字状、Ｔ字状又は平板状である
ことを特徴とするものである。A wafer supporting apparatus according to another invention of the present application is a wafer supporting apparatus of a semiconductor wafer heat treatment apparatus, comprising: a supporting section for supporting a semiconductor wafer; and a supporting column having the supporting section on one end side. It is characterized by having a letter shape, an arc shape, an X shape, a U shape, an H shape, an L shape, a T shape, or a flat plate shape.
また、中空状の支柱は、熱処理装置の加熱部に挿入され
ない部分に穴が穿設され、この穴を通してのみ支柱内外
空間が連通されているようにするのが望ましい。In addition, it is desirable that the hollow column has a hole formed in a portion that is not inserted into the heating portion of the heat treatment apparatus, and the space inside and outside the column is communicated only through this hole.
更に、支持部の半導体ウエハとの接触部は溝に形成され
ていると共に、この溝は丸棒又はパイプ材の外面に設け
られている構造としたり、同接触部は半導体ウエハと同
一材料にて形成するのもよい。Furthermore, the contact portion of the supporting portion with the semiconductor wafer is formed in a groove, and the groove is formed on the outer surface of the round bar or the pipe material, or the contact portion is made of the same material as the semiconductor wafer. It may be formed.
支持部は、半導体ウエハの周縁側を囲うリングを有する
ものも、ウエハの面内温度分布を均一にする上でよい。The supporting portion may have a ring that surrounds the peripheral edge of the semiconductor wafer in order to make the in-plane temperature distribution of the wafer uniform.
支柱を中空状にしたり、断面Ｓ字状、コ字状、平板状等
に形成することにより、中実構造より表面積が大きくな
る。これにより熱処理装置の加熱部にウエハ支持装置を
挿入したとき、支柱の伝熱面積が大きくなっていること
によって温度上昇速度が中実の支柱より早くなり、肉厚
の薄いウエハの温度上昇速度に近づく。よって、過渡時
のウエハ面内に生ずる温度分布のバラツキが低減する。
尚、中空状の支柱としては断面円形状、□形状、△形
状、楕円形状等のパイプが挙げられる。The surface area becomes larger than that of the solid structure by forming the pillar in a hollow shape or by forming the pillar in an S-shape, a U-shape, or a flat shape in cross section. As a result, when the wafer support device is inserted into the heating part of the heat treatment device, the temperature rising speed becomes faster than that of the solid pillar due to the larger heat transfer area of the pillar, and the temperature rising speed of the thin wafer becomes higher. Get closer. Therefore, the variation in the temperature distribution generated in the wafer surface during the transition is reduced.
The hollow column may be a pipe having a circular cross section, a □ shape, a Δ shape, an oval shape or the like.
支柱の肉厚を、その表面積と重量の比率で規定し、その
値をウエハ自身の同比率と略一致させることが両者の温
度上昇速度を近づける上で重要である。この比率の一致
程度としては、熱処理時間を３分間で終了できる程度が
最も良く。範囲としては１〜10分間の熱処理時間を考慮
すれば効率的で温度分布にバラツキのない熱処理ができ
る。It is important to define the wall thickness of the pillar by the ratio of the surface area to the weight thereof, and make the value substantially equal to the same ratio of the wafer itself in order to make the temperature rising speeds of both of them closer. The best match of this ratio is that heat treatment can be completed in 3 minutes. If the heat treatment time of 1 to 10 minutes is taken into consideration, the heat treatment can be performed efficiently and without variation in temperature distribution.
中空状に支柱内外を連通する穴を設けたことにより、加
熱部に支柱が挿入されたとき、支柱内の気体が熱膨脹し
ても、前記穴から外部に流出するため、支柱が破損する
おそれがない。By providing a hole for communicating the inside and outside of the pillar in a hollow shape, when the pillar is inserted into the heating portion, even if the gas in the pillar thermally expands, it will flow out from the hole, so the pillar may be damaged. Absent.
ウエハ支持装置の支持部のうち、ウエハとの接触部を丸
棒又はパイプ材とすると、その部分の強度が向上する。
また、同接触部をウエハと同一材料で形成すると、材質
の共通性によってウエハの温度分布のバラツキを一層低
減できる。If the contact portion with the wafer of the support portion of the wafer supporting device is a round bar or a pipe material, the strength of that portion is improved.
Further, if the contact portion is made of the same material as the wafer, the variation in the temperature distribution of the wafer can be further reduced due to the commonality of the materials.
ウエハの周縁側を囲うリングは、加熱部からの熱幅射を
面と対向方向からに限定でき、周縁に熱幅射が集中する
のを抑制する働きをする。The ring that surrounds the peripheral edge of the wafer can limit the thermal radiation from the heating unit from the direction opposite to the surface, and has a function of suppressing the concentration of thermal radiation on the peripheral edge.
以下本発明の一実施例を第１図及び第２図により説明す
る。第１図は本発明に適用したウエハ支持装置の外観斜
視図である。第２図は本発明を適用したウエハ支持装置
を有する拡散装置の高温炉の縦断図面である。An embodiment of the present invention will be described below with reference to FIGS. 1 and 2. FIG. 1 is an external perspective view of a wafer supporting apparatus applied to the present invention. FIG. 2 is a longitudinal sectional view of a high temperature furnace of a diffusion device having a wafer supporting device to which the present invention is applied.
ウエハ支持装置１は薄肉のパイプ状の支持部支柱２とウ
エハ３を載せるための溝４を形成した接触部８を先端に
有するウエハの５と、搬送台６に取り付けるためのフラ
ンジ７から構成されている。支持部５は薄板で形成さ
れ、溝４を有するウエハの接触部８が丸棒に形成されて
いる。ウエハ支持装置１は石英ガラス、ポリシリコン、
シリコンカーバイトなどで製造する。接触部８をウエハ
３と同一材料で形成すると、両者の温度特性が共通する
ため、温度分布のバラツキ低減によい効果がある。支柱
２の下方にて、高温炉10に入らない位置に通気穴９を有
し、支柱２の他の部分は密閉構造となっている。前記パ
イプ状の中空支柱は、その肉厚が、ウエハ支持装置のう
ち熱処理装置の加熱部に挿入されている部分の表面積と
重量との比率を、半導体ウエハ自身の表面積と重量との
比率と略一致するよう薄肉に形成されている。具体的に
は前記関係を満足させる肉厚として1mmとした。The wafer supporting device 1 is composed of a thin pipe-shaped supporting portion support 2, a wafer 5 having a contact portion 8 having a groove 4 for mounting the wafer 3 at its tip, and a flange 7 for attaching to a carrier 6. ing. The supporting portion 5 is formed of a thin plate, and the contact portion 8 of the wafer having the groove 4 is formed in a round bar. The wafer support device 1 is made of quartz glass, polysilicon,
It is manufactured with silicon carbide. If the contact portion 8 is formed of the same material as the wafer 3, the temperature characteristics of both are common, and therefore, it is effective in reducing variation in temperature distribution. A ventilation hole 9 is provided below the pillar 2 at a position where it does not enter the high temperature furnace 10, and the other portion of the pillar 2 has a closed structure. The wall thickness of the pipe-shaped hollow support is approximately equal to the ratio between the surface area and the weight of the portion of the wafer supporting device inserted into the heating portion of the heat treatment device and the ratio between the surface area and the weight of the semiconductor wafer itself. Formed thin to match. Specifically, the thickness that satisfies the above relationship was set to 1 mm.
高温炉10は第２図に示した如く直方体形状をしており、
複数に分割された平板状ヒータ11,反応管12（石英ガラ
ス製など），均熱管13（シリコンカーバイト製など），
断熱材14で構成され、架台15に乗せられている。高温炉
10は下方が開放され、ウエハ３が支持装置１の溝４に載
せられて高温炉10の内部に挿入される。支持装置１のフ
ランジ７は搬送台６に取り付けられており、搬送台６は
駆動手段16に連結され、コントローラ（図示せず）から
の制御信号によって支持装置１とウエハ３を矢印21の方
向に上下に移動して該支持装置１を加熱部すなわち高温
炉10内に出入するものである。The high temperature furnace 10 has a rectangular parallelepiped shape as shown in FIG.
Flat heater 11 divided into multiple parts, reaction tube 12 (made of quartz glass, etc.), soaking tube 13 (made of silicon carbide, etc.),
It is composed of heat insulating material 14 and is mounted on a pedestal 15. High temperature furnace
The lower portion of the wafer 10 is opened, and the wafer 3 is placed in the groove 4 of the supporting device 1 and inserted into the high temperature furnace 10. The flange 7 of the supporting device 1 is attached to the carrier 6, the carrier 6 is connected to the driving means 16, and the supporting device 1 and the wafer 3 are moved in the direction of arrow 21 by a control signal from a controller (not shown). The support device 1 is moved up and down to move in and out of the heating unit, that is, the high temperature furnace 10.
反応管12の内部には拡散装置の使用目的に応じて窒素，
アルゴン，酸素，水蒸気などのガスが上下から下方に向
かって流れている（ガスの供給管は図に示していな
い）。Depending on the purpose of use of the diffusing device, nitrogen is provided inside the reaction tube 12,
Gases such as argon, oxygen, and water vapor are flowing downward from above (the gas supply pipe is not shown in the figure).
複数に分割されたヒータ11は各ゾーンごとに発熱量がコ
ントローラによって制御され、高温炉10の内部空間に均
一な温度場が形成されている。The heater 11 divided into a plurality of zones controls the heat generation amount for each zone by the controller, and a uniform temperature field is formed in the internal space of the high temperature furnace 10.
以上のように構成された拡散装置を用いてウエハ３に熱
処理を行う場合の動作を次に示す。高温炉10の内部にた
とえば1000℃の均一の温度場を形成する。高温炉10の下
方に取り出された支持装置１にウエハ３が乗せられる。
第１図，第２図ではウエハが２枚の場合を示したが、目
的の応じて、１枚ないし、２枚以上の場合でもよい。駆
動手段16の作用により、ウエハ３を乗せた支持装置１及
び搬送台６が上方に移動し、ウエハ３を高温炉10の内部
に収納する。高温炉10の内部にて所要時間（たとえば数
十秒から数十分）、ウエハ３を加熱した後、駆動手段16
の作用により、支持装置１を高温炉10の下方に取り出
し、冷却し、新しいウエハ３と交換し、上記動作が繰り
返される。The operation when the heat treatment is performed on the wafer 3 using the diffusion device configured as described above will be described below. A uniform temperature field of, for example, 1000 ° C. is formed inside the high temperature furnace 10. The wafer 3 is placed on the supporting device 1 taken out below the high temperature furnace 10.
Although FIG. 1 and FIG. 2 show the case of two wafers, the number of wafers may be one or two or more depending on the purpose. By the action of the driving means 16, the supporting device 1 on which the wafer 3 is placed and the carrier table 6 move upward, and the wafer 3 is stored inside the high temperature furnace 10. After the wafer 3 is heated in the high temperature furnace 10 for a required time (for example, several tens of seconds to several tens of minutes), the driving means 16
By this action, the supporting device 1 is taken out below the high temperature furnace 10, cooled, replaced with a new wafer 3, and the above operation is repeated.
支持装置１は高温炉10の出入に応じて温度変動する。支
柱２が中空のパイプであるため、パイプ内部のガスが温
度変動により膨脹、収縮するが、支柱２の下方に設けら
れた通気穴９を経て外気とガス呼吸を行うため、パイプ
内部のガスの圧力が高まってパイプが破裂することがな
い。さらに通気穴９を高温炉10の内部に入らない位置と
しているため、パイプ内部のガス呼吸によってゴミを含
んだ外気を高温炉10の内部に持ち込んで吹き出すことが
なく、高温炉10の内部を清浄に保つことができる。The temperature of the supporting device 1 varies depending on the temperature of the high temperature furnace 10. Since the pillar 2 is a hollow pipe, the gas inside the pipe expands and contracts due to temperature fluctuations. However, since gas is breathed through the vent hole 9 provided below the pillar 2, the gas inside the pipe is The pipe will not burst due to increased pressure. Further, since the ventilation hole 9 is located so as not to enter the inside of the high-temperature furnace 10, the inside of the high-temperature furnace 10 is cleaned without the outside air containing dust being brought into the inside of the high-temperature furnace 10 by the gas breathing inside the pipe and blown out. Can be kept at
冷却された支持装置１及びウエハ３を高温炉10の内部に
挿入した時、ウエハ３は肉厚が薄いため（たとえば肉厚
0.5mm）、高速で高温炉内部温度に上昇する。一方、支
持装置１も薄肉パイプの支柱２と薄板の支持部５で形成
されているため（たとえば肉厚1mm）、すみやかに高温
炉内部温度に上昇し、温度上昇の過渡時のウエハ面内に
生ずる温度分布のバラツキが小さい。支持装置１の支持
部５にて、ウエハ３を乗せる溝４を有する接触部８が丸
棒となっているのは強度を大きくするためで、この丸棒
の直径をなるべく小さく（たとえば5mm以下に）するこ
とにより、熱容量を小さく保つことができる。When the cooled supporting device 1 and the wafer 3 are inserted into the high temperature furnace 10, the wafer 3 has a small thickness (for example,
0.5mm), the temperature rises to high temperature inside the furnace at high speed. On the other hand, since the supporting device 1 is also formed by the columns 2 of the thin-walled pipe and the supporting portion 5 of the thin plate (for example, the wall thickness is 1 mm), the temperature inside the high-temperature furnace quickly rises, and the temperature rises within the wafer surface during the transition. The variation in the generated temperature distribution is small. In the supporting portion 5 of the supporting device 1, the contact portion 8 having the groove 4 on which the wafer 3 is placed is a round bar in order to increase the strength, and the diameter of this round bar is made as small as possible (for example, 5 mm or less). By doing so, the heat capacity can be kept small.
本実施例によれば、支持装置１の支柱２を中空のパイプ
状とすることにより、中実のものより薄肉に形成するこ
とが可能となるため、支柱の表面積すなわち伝熱面積を
大きくすることができ、以って低温のウエハ３を高温炉
10の内部に挿入した際の過渡時のウエハ面内の温度分布
を小さくすることができる効果がある。According to this embodiment, since the supporting column 2 of the supporting device 1 is formed into a hollow pipe shape, it can be formed to be thinner than a solid column, so that the surface area of the column, that is, the heat transfer area can be increased. And the low temperature wafer 3 is heated to the high temperature furnace.
There is an effect that the temperature distribution in the wafer surface at the time of transition when inserted into the inside of 10 can be reduced.
第３図に約1000℃の高温炉（第２図に示した構造の場
合）の内部にウエハ及びウエハ支持装置を挿入した時の
過渡温度変化について数値シミュレーションした結果を
示す。厚さ1mmのパイプ状の支柱からなるウエハ支持装
置１にウエハ（厚さ0.5mm）を乗せて挿入した場合につ
いて、該ウエハの中心位置の温度変化を実線31、ウエハ
下部の温度変化を実線32、ウエハ支持装置の支持部先端
部の温度変化を実線33に示す。ウエハ支持装置の厚さが
ウエハより厚いため、該支持装置の温度上昇がやや遅く
なるが、約２分後にはほぼ同一温度になっている。FIG. 3 shows the result of numerical simulation of the transient temperature change when the wafer and the wafer support device are inserted inside the high temperature furnace (in the case of the structure shown in FIG. 2) of about 1000 ° C. When a wafer (thickness: 0.5 mm) is placed on the wafer supporting device 1 made of a pipe-shaped support having a thickness of 1 mm and the wafer is inserted, the temperature change at the center position of the wafer is indicated by a solid line 31, and the temperature change under the wafer is indicated by a solid line 32. A solid line 33 shows the temperature change at the tip of the supporting portion of the wafer supporting device. Since the thickness of the wafer supporting device is thicker than that of the wafer, the temperature of the supporting device rises slightly slower, but the temperature is almost the same after about 2 minutes.
一方、厚さ5mmのパイプ状の支柱を有するウエハ支持装
置にウエハ（厚さ0.5mm）を乗せて挿入した場合につい
て、ウエハ中心位置の温度変化を破線34、ウエハ下部の
温度変化を破線35、該支持装置の先端部の温度変化を破
線36に示す。ウエハの厚さが厚いため、３分後でも支持
装置の温度が約800℃であり、その結果ウエハ面内にま
だ温度分布が生じていて、更に長時間の加熱が必要であ
ることが解る。なお、ウエハ温度34,35が一旦高温とな
ってから少し下がる理由は、高温炉の内部温度がウエハ
挿入直後からウエハ支持装置の加熱のために冷やされる
からである。以上のことから、ウエハ面内の温度分布を
低減するにはウエハ支持装置を薄肉材とすることが重要
であることがわかる。On the other hand, in the case where a wafer (thickness: 0.5 mm) is placed on a wafer supporting device having a pipe-shaped support having a thickness of 5 mm and inserted, the temperature change at the wafer center position is indicated by a broken line 34, the temperature change at the lower part of the wafer is indicated by a broken line 35, A change in temperature at the tip of the supporting device is shown by a broken line 36. Since the thickness of the wafer is large, the temperature of the supporting device is about 800 ° C. even after 3 minutes, and as a result, the temperature distribution is still generated in the wafer surface, and it is necessary to further heat for a long time. The reason why the wafer temperatures 34 and 35 are slightly lowered after they are once high is that the internal temperature of the high temperature furnace is cooled immediately after the wafer is inserted to heat the wafer supporting apparatus. From the above, it can be seen that it is important to use a thin material for the wafer support device in order to reduce the temperature distribution in the wafer surface.
薄肉化の一つの方法として、本実施例の支柱を中空状に
すれば同じ重量の材料を用いて中実の支柱を作る場合よ
り板厚が薄くなり、伝熱面積が大きくなり、以って温度
上昇速度が速くなる。As one method of thinning the wall, if the pillar of the present embodiment is hollow, the plate thickness becomes smaller and the heat transfer area becomes larger than that of the case where a solid pillar is made by using the same weight of material. The temperature rise rate becomes faster.
本発明の他の実施例のウエハ支持装置の外観視斜図を第
４図に示す。この支持装置１は先端支持部５の構造が異
なっている。また、溝４を有する接触部17がパイプで形
成されている。本実施例によれば、溝４を有する接触部
17がパイプで形成されているため、ウエハに直接接触す
る溝４の部分の熱容量を更に小さくすることができ、ウ
エハ面内の温度分布を更に小さくすることができる。FIG. 4 is an external perspective view of a wafer supporting apparatus according to another embodiment of the present invention. This support device 1 is different in the structure of the tip support portion 5. Further, the contact portion 17 having the groove 4 is formed of a pipe. According to this embodiment, the contact portion having the groove 4
Since 17 is formed of a pipe, the heat capacity of the portion of the groove 4 that directly contacts the wafer can be further reduced, and the temperature distribution in the wafer surface can be further reduced.
本発明の他の実施例を第５図に示す。ウエハ支持装置１
の支柱２に補強用のパイプ18が並設されている。補強用
のパイプ18も上部19が密封され、下部に通気穴20を有す
る。この支持装置１の先端支持部５もパイプで形成され
ている。支持部５のパイプ内の空間と支柱２の内部空間
は連通している。本実施例によれば支持装置１の剛性が
パイプ18によって増し、加熱部への挿入や取り出しなど
支持装置を移動する時に振動が生じにくくすることがで
きる。Another embodiment of the present invention is shown in FIG. Wafer support device 1
Reinforcing pipes 18 are juxtaposed on the columns 2. The reinforcing pipe 18 is also sealed at the upper portion 19 and has a ventilation hole 20 at the lower portion. The tip support portion 5 of the support device 1 is also formed of a pipe. The space inside the pipe of the support portion 5 and the inner space of the support column 2 communicate with each other. According to the present embodiment, the rigidity of the supporting device 1 is increased by the pipe 18, and it is possible to make it difficult for vibration to occur when moving the supporting device such as insertion into and removal from the heating portion.
本発明の他の実施例の外観斜視図を第６図に示す。この
支持装置１の支柱２はロ字状の断面形状になっている。An external perspective view of another embodiment of the present invention is shown in FIG. The support 2 of the supporting device 1 has a square cross section.
本発明の他の実施例の外観斜視図を第７図に示す。支柱
２はＸ字状の断面形状になっている。An external perspective view of another embodiment of the present invention is shown in FIG. The pillar 2 has an X-shaped cross section.
本発明の他の実施例の外観斜視図を第８図に示す。支柱
２はＳ字状の断面形状になっている。An external perspective view of another embodiment of the present invention is shown in FIG. The pillar 2 has an S-shaped cross section.
本発明の他の実施例の外観斜視図を第９図に示す。支柱
２は円弧状の断面形状になっている。An external perspective view of another embodiment of the present invention is shown in FIG. The column 2 has an arc-shaped cross section.
本発明の他の実施例の支柱の断面図を第10図〜第15図に
示す。第10図はコ字状の断面形状、第11図はＨ字状の断
面形状、第12図はＬ字状の断面形状、第13図はＴ字状の
断面形状、第14図は楕円状の断面形状、第15図はΔ字状
の断面形状のものである。第14図と第15図に示す支柱に
ついては、第１図に示したごとく、支柱２が高温炉10の
内部に挿入される部分を密閉構造とし、装置外部の部分
に通気穴９を設けることが望ましい。Cross-sectional views of columns according to another embodiment of the present invention are shown in FIGS. FIG. 10 is a U-shaped cross-sectional shape, FIG. 11 is an H-shaped cross-sectional shape, FIG. 12 is an L-shaped cross-sectional shape, FIG. 13 is a T-shaped cross-sectional shape, and FIG. FIG. 15 shows a Δ-shaped cross section. As for the support columns shown in FIGS. 14 and 15, as shown in FIG. 1, the part where the support column 2 is inserted into the high temperature furnace 10 has a hermetically sealed structure, and the ventilation hole 9 is provided outside the device. Is desirable.
本発明の他の実施例の外観斜視図を第16図に示す。この
支持装置１の支柱２は３本のパイプからなっている。支
持部５は丸棒の接触部８のみからなっている。An external perspective view of another embodiment of the present invention is shown in FIG. The supporting column 2 of the supporting device 1 is composed of three pipes. The support portion 5 is composed only of the contact portion 8 of a round bar.
本発明の他の実施例の外観斜視図を第17図に示す。支柱
２は３枚の平板からなっている。支持部５は平板上端に
設けた溝４のみからなっている。An external perspective view of another embodiment of the present invention is shown in FIG. The column 2 is composed of three flat plates. The supporting portion 5 is composed only of the groove 4 provided at the upper end of the flat plate.
本発明の他の実施例の外観斜視図を第18図に示す。支持
部５が薄板で形成された箱形になっている。FIG. 18 is an external perspective view of another embodiment of the present invention. The supporting portion 5 has a box shape formed of a thin plate.
本発明の他の実施例の外観斜視図を第19図に示す。支柱
２がパイプになっていると共に、その下部の直径が大き
くなっている。本実施例によれば支柱２の剛性を増すこ
とができる。FIG. 19 is an external perspective view of another embodiment of the present invention. The pillar 2 is a pipe, and the diameter of the lower portion is large. According to this embodiment, the rigidity of the column 2 can be increased.
本発明の他の実施例の外観斜視図を第20図に示す。支持
部５は先端のウエハよりも大きくて、ウエハの周縁側を
囲うリング26を有し、その内側に溝４をもつ丸棒からな
る接触部８をもつ。本実施例によればウエハ２枚を乗せ
て支持装置１を高温炉10の内部に挿入する際に、２枚の
ウエハの側方から２枚のウエハの内側に放射される熱を
リング26がさえぎるため、２枚のウエハとも外側の面の
みで均一に加熱され、ウエハ面内に生じる温度分布のバ
ラツキを低減する効果がある。An external perspective view of another embodiment of the present invention is shown in FIG. The supporting portion 5 is larger than the tip wafer and has a ring 26 surrounding the peripheral edge of the wafer, and has a contact portion 8 formed of a round bar having a groove 4 inside thereof. According to the present embodiment, when two wafers are placed and the supporting device 1 is inserted into the high temperature furnace 10, the ring 26 generates heat radiated from the sides of the two wafers to the inside of the two wafers. Since the two wafers are blocked, the two wafers are uniformly heated only on the outer surface, which has the effect of reducing the variation in the temperature distribution generated in the wafer surfaces.
本発明の他の実施例のウエハ支持装置と高温炉の断面図
を第21図に示す。円筒形状の高温炉10に水平状態のウエ
ハ３を挿入する。このウエハ３は先端が針状になった接
触部８に乗せられている。FIG. 21 shows a sectional view of a wafer supporting apparatus and a high temperature furnace according to another embodiment of the present invention. The horizontal wafer 3 is inserted into the cylindrical high temperature furnace 10. The wafer 3 is placed on a contact portion 8 having a needle-shaped tip.
本発明の他の実施例のウエハ支持装置とランプ加熱装置
の断面図を第22図に示す。ハロゲンランプ23、反射板2
4、反応管12で構成された直方体形状のランプ加熱装置2
5の内部に、ウエハ３が支持装置１に乗せられて挿入さ
れている。この支持装置１はパイプ状の支柱２の側面に
針状の突起22を支持部５として形成されており、ウエハ
３がこの突起22に乗せられている。支持装置１はランプ
加熱装置25の内部に挿入されている部分が密封構造であ
り、同装置25外部に通気穴９を有する。この支持装置１
は搬送台６に取り付けられ、矢印21の方向に移動してウ
エハ３の挿入、取出しを行う。FIG. 22 shows a sectional view of a wafer supporting apparatus and a lamp heating apparatus according to another embodiment of the present invention. Halogen lamp 23, reflector 2
4, a rectangular parallelepiped lamp heating device composed of a reaction tube 12
The wafer 3 is placed on the supporting device 1 and inserted into the interior of the device 5. In this supporting device 1, a needle-shaped protrusion 22 is formed as a support portion 5 on the side surface of a pipe-shaped support 2, and a wafer 3 is placed on this protrusion 22. The support device 1 has a hermetically sealed structure in a portion inserted into the lamp heating device 25, and has a ventilation hole 9 outside the device 25. This support device 1
Is attached to the carrier table 6 and moves in the direction of arrow 21 to insert and remove the wafer 3.
尚、中空状の支柱内部に発熱源と冷却源を備え、ウエハ
支持装置自体の温度がウエハと同一となるよう温度制御
することによっても温度上昇速度を両者近づけることが
できる。The temperature rising rate can be made close to each other by providing a heat generating source and a cooling source inside the hollow column and controlling the temperature so that the temperature of the wafer supporting device itself becomes the same as that of the wafer.
本発明によれば、中空状の支柱は、その肉厚が、ウエハ
支持装置のうち熱処理装置の加熱部に挿入されている部
分の表面積と重量との比率を、半導体ウエハ自身の表面
瀬と重量との比率と略一致するよう薄肉に形成されてい
る、あるいは断面Ｓ字状、Ｘ字等とすることにより中実
にするよりは肉厚を薄く形成でき、これにより同重量の
材料で形成したときの表面積を大きくすることができる
ので、伝熱面積が増大する。従って、ウエハ支持装置全
体の熱容量を低減することができるので、ウエハ及びウ
エハ支持装置を高温炉内等の加熱部に挿入した時に、ウ
エハとウエハ支持装置の温度上昇速度がほぼ等しくな
る。そのため、過渡時も含めてウエハ面内の温度分布の
バラツキを低減することができる。その結果ウエハ面内
温度分布の低減により、短時間熱処理でもウエハの熱処
理を均一に行うことができる。According to the present invention, the hollow pillar has a wall thickness, the ratio of the surface area and the weight of the portion of the wafer supporting apparatus inserted into the heating portion of the heat treatment apparatus to the surface and weight of the semiconductor wafer itself. The thickness is thin so as to substantially match the ratio with, or the wall thickness can be made thinner than that of a solid one by making it S-shaped or X-shaped in cross section. Since the surface area of the can be increased, the heat transfer area is increased. Therefore, since the heat capacity of the entire wafer supporting device can be reduced, when the wafer and the wafer supporting device are inserted into the heating portion such as in the high temperature furnace, the temperature rising rates of the wafer and the wafer supporting device become substantially equal. Therefore, it is possible to reduce the variation in the temperature distribution within the wafer surface even during the transition. As a result, the temperature distribution in the wafer surface is reduced, so that the heat treatment of the wafer can be uniformly performed even in the short-time heat treatment.
本発明に係る半導体ウエハ熱処理装置によれば、ウエハ
の均一熱分布加熱が容易かつ確実にできるため、ウエハ
に結晶欠陥が発生するのを防止でき、熱処理の不良率が
低下する効果がある。これらの効果により、熱処理の歩
留りが向上する。According to the semiconductor wafer heat treatment apparatus of the present invention, the uniform heat distribution heating of the wafer can be performed easily and reliably, so that it is possible to prevent the generation of crystal defects in the wafer and to reduce the heat treatment defect rate. Due to these effects, the yield of heat treatment is improved.
支柱が中空状のときは通気穴を設けることにより内部気
体の膨張、収縮による支柱破損の恐れをなくせる。When the column is hollow, the ventilation hole is provided to eliminate the risk of column damage due to expansion and contraction of the internal gas.
支持部のウエハとの接触部をウエハと同一材料にて形成
すれば、温度特性が共通することによって温度分布のバ
ラツキが更に低減できる。If the contact portion of the support portion with the wafer is made of the same material as the wafer, the temperature characteristics are common, so that the variation in the temperature distribution can be further reduced.
支持部にリングを設けてウエハの周縁側を囲えば、構造
面から熱輻射のウエハ周縁への集中を防止できる。If the support portion is provided with a ring and surrounds the peripheral edge of the wafer, it is possible to prevent heat radiation from concentrating on the peripheral edge of the wafer from the structural surface.
第１図は本発明に係るウエハ支持装置の斜視図、第２図
は本発明に係る半導体ウエハ熱処理装置の要部縦断図、
第３図は約1000℃の高温炉内にウエハ及びウエハ支持装
置を挿入した時の過渡温度変化についての数値シミュレ
ーション結果を示す図、第４図乃至第９図は本発明の各
々異なる他実施例を示す斜視図、第10図乃至第15図はそ
れぞれ異なる実施例に係る支柱の断面図、第16図乃至第
20図は本発明の各々異なる実施例の斜視図、第21図及び
第22図は、半導体ウエハ熱処理装置の各々異なる実施例
を示す断面図である。 １……ウエハ支持装置、２……支柱、３……ウエハ、 ４……溝、５……支持部、９……通気穴、 10……高温炉（加熱部）、16……駆動手段、 18……補強パイプ、20……通気穴、 22……針状の突起、26……リング。FIG. 1 is a perspective view of a wafer supporting apparatus according to the present invention, and FIG. 2 is a longitudinal sectional view of essential parts of a semiconductor wafer heat treatment apparatus according to the present invention.
FIG. 3 is a diagram showing a numerical simulation result of a transient temperature change when a wafer and a wafer supporting device are inserted in a high temperature furnace of about 1000 ° C., and FIGS. 4 to 9 are other embodiments of the present invention. And FIG. 10 to FIG. 15 are sectional views of columns according to different embodiments, and FIG. 16 to FIG.
FIG. 20 is a perspective view of different embodiments of the present invention, and FIGS. 21 and 22 are sectional views showing different embodiments of the semiconductor wafer heat treatment apparatus. 1 ... Wafer support device, 2 ... Post, 3 ... Wafer, 4 ... Groove, 5 ... Support section, 9 ... Vent hole, 10 ... High temperature furnace (heating section), 16 ... Driving means, 18 …… Reinforcement pipe, 20 …… Vent hole, 22 …… Needle-like projection, 26 …… Ring.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 本間 和男 茨城県土浦市神立町502番地 株式会社日 立製作所機械研究所内 (72)発明者 酒井 昭彦 茨城県土浦市神立町502番地 株式会社日 立製作所機械研究所内 (72)発明者 高垣 哲也 東京都小平市上水本町1450番地 株式会社 日立製作所武蔵工場内 (72)発明者 内野 敏幸 東京都小平市上水本町1450番地 株式会社 日立製作所武蔵工場内 (56)参考文献 特開 昭60−171723（ＪＰ，Ａ) 特開 昭60−213022（ＪＰ，Ａ) 特開 昭54−5380（ＪＰ，Ａ) 実開 昭60−111037（ＪＰ，Ｕ) 実公 昭43−567（ＪＰ，Ｙ１) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kazuo Honma 502 Jinritsu-cho, Tsuchiura-shi, Ibaraki Hiritsu Seisakusho Co., Ltd.Mechanical Research Laboratory (72) Inventor Akihiko Sakai 502 Jin-tachi, Tsuchiura-shi, Ibaraki Hiritsu Seisakusho Co., Ltd. Mechanical Research Laboratory (72) Inventor Tetsuya Takagaki 1450, Kamimizuhonmachi, Kodaira-shi, Tokyo Inside Musashi Plant, Hitachi, Ltd. (72) Toshiyuki Uchino 1450, Kamimizuhoncho, Kodaira-shi, Tokyo Inside Musashi Plant, Hitachi Ltd. ( 56) References JP-A-60-171723 (JP, A) JP-A-60-213022 (JP, A) JP-A-54-5380 (JP, A) Actual development Sho-60-111037 (JP, U) Actual public 43-567 (JP, Y1)
Claims (7)
に前記支持部を有する支柱とを備えた半導体ウエハ熱処
理装置のウエハ支持装置において、該ウエハ支持装置は
石英ガラス、ポリシリコン又はシリコンカーバイドにて
形成されていると共に、前記支柱は中空状に形成されて
おり、支柱の肉厚は、ウエハ支持装置のうち熱処理装置
の加熱部に挿入されている部分の表面積と重量との比率
を、半導体ウエハ自身の表面積と重量との比率と略一致
するよう薄肉に設定されていることを特徴とする半導体
ウエハ熱処理装置のウエハ支持装置。1. A wafer supporting device of a semiconductor wafer heat treatment apparatus comprising a supporting part for supporting a semiconductor wafer and a support having the supporting part at one end side, wherein the wafer supporting device is quartz glass, polysilicon or silicon carbide. And the pillar is formed in a hollow shape, and the wall thickness of the pillar is the ratio of the surface area to the weight of the portion of the wafer supporting apparatus inserted into the heating unit of the heat treatment apparatus, and the weight of the portion. A wafer supporting device of a semiconductor wafer heat treatment apparatus, which is set to be thin so that the ratio of the surface area to the weight of the semiconductor wafer itself substantially matches.
に前記支持部を有する支柱とを備えた半導体ウエハ熱処
理装置のウエハ支持装置において、前記支柱の断面はＳ
字状、円弧形状、Ｘ字状、コ字状、Ｈ字状、Ｌ字状、Ｔ
字状又は平板状であることを特徴とする半導体ウエハ熱
処理装置のウエハ支持装置。2. A wafer supporting device of a semiconductor wafer heat treatment apparatus, comprising: a supporting part for supporting a semiconductor wafer; and a supporting column having the supporting part on one end side thereof.
Letter shape, arc shape, X shape, U shape, H shape, L shape, T
A wafer support device for a semiconductor wafer heat treatment apparatus, which is shaped like a letter or a flat plate.
入されない部分に穴が穿設され、この穴を通してのみ支
柱内外空間が連通されている請求項１記載の半導体ウエ
ハ熱処理装置のウエハ支持装置。3. A wafer for a semiconductor wafer heat treatment apparatus according to claim 1, wherein the hollow pillar has a hole formed in a portion which is not inserted into the heating portion of the heat treatment apparatus, and the space inside and outside the pillar is communicated only through this hole. Support device.
成されていると共に、この溝は丸棒又はパイプ材の外面
に設けられている請求項１又は２記載の半導体ウエハ熱
処理装置のウエハ支持装置。4. The semiconductor wafer heat treatment apparatus according to claim 1, wherein the contact portion of the support portion with the semiconductor wafer is formed in a groove, and the groove is provided on the outer surface of the round bar or the pipe material. Wafer support device.
ウエハと同一材料にて形成されている請求項１又は２記
載の半導体ウエハ熱処理装置のウエハ支持装置。5. The wafer supporting apparatus of the semiconductor wafer heat treatment apparatus according to claim 1, wherein the contact portion of the supporting portion with the semiconductor wafer is formed of the same material as the semiconductor wafer.
ングを有する請求項１又は２記載の半導体ウエハ熱処理
装置のウエハ支持装置。6. The wafer supporting apparatus of the semiconductor wafer heat treatment apparatus according to claim 1, wherein the supporting portion has a ring surrounding the peripheral side of the semiconductor wafer.
出入させる駆動手段とを備えた半導体ウエハ熱処理装置
において、ウエハ支持装置は請求項１乃至６のうちいず
れかのものである半導体ウエハ熱処理装置。7. A semiconductor wafer heat treatment apparatus provided with a heating section and a driving means for moving the wafer supporting apparatus into and out of the heating section, wherein the wafer supporting apparatus is the semiconductor wafer according to any one of claims 1 to 6. Heat treatment equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63087728A JPH0793281B2 (en) | 1988-04-08 | 1988-04-08 | Wafer supporting apparatus for semiconductor wafer heat treatment apparatus and semiconductor wafer heat treatment apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63087728A JPH0793281B2 (en) | 1988-04-08 | 1988-04-08 | Wafer supporting apparatus for semiconductor wafer heat treatment apparatus and semiconductor wafer heat treatment apparatus |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8259104A Division JP2777643B2 (en) | 1996-09-30 | 1996-09-30 | Semiconductor wafer heat treatment apparatus and semiconductor wafer heat treatment apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01259528A JPH01259528A (en) | 1989-10-17 |
| JPH0793281B2 true JPH0793281B2 (en) | 1995-10-09 |
Family
ID=13922976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63087728A Expired - Fee Related JPH0793281B2 (en) | 1988-04-08 | 1988-04-08 | Wafer supporting apparatus for semiconductor wafer heat treatment apparatus and semiconductor wafer heat treatment apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0793281B2 (en) |
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| JPS6022314A (en) * | 1983-07-19 | 1985-02-04 | Toshiba Corp | Boat for semiconductor wafer |
| JPS60111037U (en) * | 1983-12-28 | 1985-07-27 | 株式会社 デンコ− | Vertical semiconductor heat treatment furnace |
| JPS60171723A (en) * | 1984-02-17 | 1985-09-05 | Fujitsu Ltd | Manufacture of semiconductor device and apparatus therefor |
| JPS60213022A (en) * | 1984-04-09 | 1985-10-25 | Tekunisuko:Kk | Vertical supporting tool |
| JPS62293622A (en) * | 1986-06-12 | 1987-12-21 | Kokusai Electric Co Ltd | Heat treatment device for semiconductor substrate |
-
1988
- 1988-04-08 JP JP63087728A patent/JPH0793281B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01259528A (en) | 1989-10-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |