JP2563981Y2 - Vertical heat treatment equipment - Google Patents
Vertical heat treatment equipmentInfo
- Publication number
- JP2563981Y2 JP2563981Y2 JP3668792U JP3668792U JP2563981Y2 JP 2563981 Y2 JP2563981 Y2 JP 2563981Y2 JP 3668792 U JP3668792 U JP 3668792U JP 3668792 U JP3668792 U JP 3668792U JP 2563981 Y2 JP2563981 Y2 JP 2563981Y2
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- heat
- vertical
- quartz
- treatment apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- Drying Of Semiconductors (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本考案は、半導体ウエーハや液晶
等のガラス基板の熱処理を行なう縦型熱処理装置に係
り、特に炉心管底部に配置された保温筒上に設置可能に
構成された縦型石英ガラス製収納治具を具えた縦型熱処
理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical heat treatment apparatus for heat-treating a glass substrate such as a semiconductor wafer or a liquid crystal, and more particularly to a vertical heat treatment apparatus which can be installed on a heat retaining cylinder arranged at the bottom of a furnace tube. The present invention relates to a vertical heat treatment apparatus provided with a quartz glass storage jig.
【０００２】[0002]
【従来の技術】従来より、周囲に加熱手段を囲繞した石
英ガラス製炉芯管内に、半導体ウエハを積層配置した支
持ボートを収納可能に構成し、前記加熱手段により支持
ボート上に載設した半導体ウエハを所定温度域まで加熱
し制御しながら、該半導体ウエハ表面域に反応ガス又は
不活性ガスを流し、半導体ウエハ表面域の酸化、拡散、
気相成長、アニール等の各種熱処理を行う熱処理装置は
公知であり、この種の熱処理装置においては省設置面積
化を図るために、前記炉心管を垂直に立設した縦型構造
の加熱処理炉を多用しているが、かかる装置においては
ウエハ表面域に形成又は注入される薄膜の厚さや不純物
濃度分布のバラツキを防止する為に、炉芯管2 内の加熱
区域と炉芯管開口端側間に石英ガラス製の保温筒を配し
て前記ウエハ熱処理用空間温度の均等化を図るととも
に、前記炉芯管周囲に囲繞した加熱手段1 を保温筒上方
に位置せしめ、前記保温筒を断熱材として機能させる事
により、炉芯管2 開口端側に設けたＯリングその他のシ
ール部分に高温が伝搬するのを防いでいる。2. Description of the Related Art Conventionally, a support boat on which semiconductor wafers are stacked is arranged so as to be housed in a quartz glass furnace core tube surrounding a heating means, and a semiconductor mounted on the support boat by the heating means. While heating and controlling the wafer to a predetermined temperature range, a reaction gas or an inert gas is caused to flow over the semiconductor wafer surface area, and oxidation, diffusion,
Heat treatment apparatuses for performing various heat treatments such as vapor phase growth and annealing are known, and in this kind of heat treatment apparatus, a heat treatment furnace having a vertical structure in which the furnace tube is erected vertically in order to reduce the installation area. However, in such an apparatus, in order to prevent variations in the thickness and impurity concentration distribution of the thin film formed or injected on the wafer surface area, the heating area in the furnace core tube 2 and the furnace core tube opening end side A heat insulating cylinder made of quartz glass is interposed between the heat insulating cylinders to equalize the space temperature for the wafer heat treatment, and a heating means 1 surrounding the furnace core tube is positioned above the heat insulating cylinder, and the heat insulating cylinder is made of a heat insulating material. This prevents high temperature from propagating to the O-ring and other seal portions provided on the open end side of the furnace core tube 2.
【０００３】かかる従来装置においては、支持ボートの
下側には保温等が配設されているが、ボート上側にはウ
エーハ等を積層支持する支持溝を刻設した複数の支柱を
支持する薄板の円板が配設されているのみで、ボート上
部における保温状態は必ずしも完全でなく、この為熱処
理域の均熱長が乱され、この為ボート上部近傍のウエー
ハに対しては必ずしも高品質の熱処理を行なうことが出
来ず、しばしば不良品として廃棄される場合が多々あっ
た。[0003] In such a conventional apparatus, heat insulation and the like are provided below the support boat. On the upper side of the boat, a thin plate for supporting a plurality of columns provided with support grooves for laminating and supporting wafers and the like is provided. Only the disks are provided, and the heat retention state at the top of the boat is not always perfect, so the soaking length of the heat treatment area is disturbed. Therefore, high-quality heat treatment is not always performed on the wafer near the top of the boat. Could not be performed, and was often discarded as a defective product.
【０００４】かかる欠点を解消する為に、特開昭６０ー
１４０８１７において、図２に示すように、炉心管３７
の保温筒３４上に設置したウエーハ収納治具３０の上方
より石英ウールを充填した石英容器３２を持つキャップ
３９により炉心管が封止可能に構成し、これにより炉心
管３７内の熱が上方に逃げることを防止する技術が提案
されている。In order to solve such a disadvantage, Japanese Patent Application Laid-Open No. 60-140817 discloses a core tube 37 as shown in FIG.
The furnace core tube can be sealed by a cap 39 having a quartz container 32 filled with quartz wool from above the wafer storage jig 30 installed on the heat retaining tube 34, thereby the heat inside the furnace tube 37 is raised upward. Techniques for preventing escape have been proposed.
【０００５】[0005]
【考案が解決しようとする課題】しかしながら、前記従
来技術においては石英容器３２と収納治具３０上面間を
間隔保持して配設せねばならないために、その分収納治
具３０の全長が短くなり、積載可能なウエーハ枚数が減
ると共に、基本的には石英容器３２の下面まで加熱せね
ば所定の均熱域を維持出来ない為に、ヒータ３５の長さ
に対し実質的均熱部の長さは短くなり均熱部の効率が低
下する。又、炉心管３７がキャップ３９と胴体部分に分
割され、而も下面に石英容器３２を取り付けているため
に、キャップ３９上面側にガス導入口を設けることが困
難であり、いずれにしても装置構成が煩雑化する。However, in the prior art, since the quartz container 32 and the upper surface of the storage jig 30 must be arranged with a space therebetween, the total length of the storage jig 30 becomes shorter. In addition, the number of wafers that can be loaded is reduced, and a predetermined soaking area cannot be maintained unless the bottom surface of the quartz container 32 is heated. Is shortened, and the efficiency of the soaking section is reduced. In addition, since the furnace tube 37 is divided into a cap 39 and a body portion, and the quartz container 32 is attached to the lower surface, it is difficult to provide a gas inlet on the upper surface side of the cap 39. The configuration becomes complicated.
【０００６】本考案は、かかる従来技術の欠点に鑑み、
半導体ウエーハや液晶等のガラス基板の熱処理におい
て、温度管理が容易にして安定した均熱域を形成し得る
と共に、ボートの強度性を維持して多数枚のウエーハ等
を効率よく熱処理可能な縦型熱処理装置を提供する事を
目的とする。The present invention has been made in view of the drawbacks of the prior art.
In the heat treatment of semiconductor wafers and glass substrates such as liquid crystals, a vertical type that can easily form a stable soaking area by easily controlling the temperature and can efficiently heat many wafers while maintaining the strength of the boat An object of the present invention is to provide a heat treatment apparatus.
【０００７】[0007]
【課題を解決するための手段】本考案はかかる技術的課
題を達成するために、前記ウエーハ等を積層支持する支
持溝を刻設した複数の支柱の下面側に板状端板を、又上
面側に、石英ウールまたは石英発泡体を充填した中空体
を夫々固設すると共に、前記中空体肉厚を前記保温筒肉
厚より小に設定した縦型石英ガラス製収納治具を具えた
事を特徴とする縦型熱処理装置を提案する。According to the present invention, a plate-like end plate is provided on the lower surface of a plurality of pillars provided with support grooves for laminating and supporting wafers and the like, and an upper surface is provided. On the side, a hollow body filled with quartz wool or quartz foam was fixedly provided, and a vertical quartz glass storage jig in which the thickness of the hollow body was set smaller than the thickness of the heat retaining cylinder was provided. A featured vertical heat treatment apparatus is proposed.
【０００８】[0008]
【作用】かかる技術手段によれば、中空体は石英ウール
または石英発泡体を充填してある為に上部保温筒として
機能し、結果としてウエーハ等を積層支持する収納治具
の上下両側に夫々保温筒が位置することになる為に、上
部より熱が逃げる事なく安定した均熱域が確保出来る。
又、本従来技術においては上部保温筒が直接収納治具に
固設されている為に、下部保温筒と上部保温筒がいずれ
も収納治具に密着配置されることになり、この結果炉心
管の有効長の限度一杯、収納治具長さを設定でき、前記
従来技術に比較して積載可能なウエーハ枚数が大幅に増
加すると共に、ヒータの長さも収納治具長さに対応で
き、ヒータよりの無用な熱損失がなくなり熱効率が増加
する。又、炉心管はキャップと胴体部分に分割する事な
く、従来の炉心管をそのまま使用でき、装置構成の簡単
化につながる。According to this technical means, since the hollow body is filled with quartz wool or quartz foam, it functions as an upper heat retaining cylinder, and as a result, heat is kept on both upper and lower sides of the storage jig for supporting the wafers and the like in a stacked manner. Since the cylinder is located, a stable soaking area can be secured without heat escaping from the upper part.
Further, in the prior art, since the upper heat retaining cylinder is directly fixed to the storage jig, both the lower heat retaining cylinder and the upper heat retaining cylinder are closely attached to the storage jig. The length of the storage jig can be set to the maximum of the effective length of the storage jig, and the number of wafers that can be loaded can be greatly increased compared to the prior art, and the length of the heater can also correspond to the storage jig length. The useless heat loss is eliminated and the thermal efficiency is increased. Further, the conventional core tube can be used as it is without dividing the core tube into a cap and a body portion, which leads to simplification of the device configuration.
【０００９】又熱は上方より下方に向け熱勾配を有する
ために、上部保温筒（中空体）の肉厚を下部保温筒の肉
厚より小に設定しても保温能力に差がないことに着目し
て前記構成を取っている。これにより支柱にかかる重力
負担を軽減し、強度的に不安のない収納治具を得ること
が出来ると共に、多数枚のウエーハの積載配置を可能と
する強度も確保することが出来る。Further, since the heat has a thermal gradient from the upper side to the lower side, there is no difference in the heat retaining ability even if the thickness of the upper heat retaining cylinder (hollow body) is set smaller than the thickness of the lower heat retaining cylinder. The above-described configuration is taken with attention. As a result, the load of gravity applied to the columns can be reduced, a storage jig free from anxiety in strength can be obtained, and the strength that allows a large number of wafers to be stacked can be ensured.
【００１０】又特に好ましい実施例においては前記中空
体を、炉心管周囲に囲繞されるヒータ加熱域の上縁側若
しくは該加熱域より外れた区域に位置するように構成す
る事により、前記保温筒を密封封止しても破開／損傷す
ることがない。これにより前記中空体内の断熱材が中空
体外に飛散してパーティクルの発生の原因となることな
く、好ましい。In a particularly preferred embodiment, the hollow body is arranged so as to be located on the upper edge side of a heater heating area surrounded around the furnace core tube or in an area outside the heating area, so that the heat retaining cylinder is formed. There is no rupture / damage when hermetically sealed. Thereby, it is preferable that the heat insulating material in the hollow body does not scatter outside the hollow body to cause generation of particles.
【００１１】又前記中空体に気泡を混入させ、半透明若
しくは不透明に形成する事により外中空体自体にも保熱
効果をもたすことが出来、好ましい。It is preferable that air bubbles are mixed into the hollow body and the hollow body is formed to be translucent or opaque because the outer hollow body itself can have a heat retaining effect.
【００１２】尚、本考案に類似する技術として支柱の上
下両側に厚肉の中実円筒体を固設した支持ボートが特開
平３ー２５７８２１号に開示されている。そして前記技
術は材料が石英に較べて熱容量の小さい炭化珪素である
ために、保温筒としての機能を有さず、本考案と似て非
なる技術であるが、前記ボートを石英ガラスで形成して
も尚次の様な問題が生じる。即ち前記円筒体は中実であ
るために重量負担が大きく、炭化珪素ならばいざしら
ず、石英ガラスでは強度性が大きな問題となる。この為
透孔を明けた技術も開示されているが、この様な構成を
取ると保温筒としての効果が大きく低減する。又上下に
位置する円筒体が同一厚肉であり、この面でも熱特性を
何等考慮していない。従ってかかる従来技術からは本考
案は何等創作し得ない。As a technique similar to the present invention, Japanese Patent Laid-Open No. 3-257821 discloses a support boat in which thick solid cylinders are fixedly provided on the upper and lower sides of a column. Since the material is silicon carbide having a smaller heat capacity than quartz, it does not have a function as a heat retaining cylinder and is a similar technology to the present invention, but the boat is formed of quartz glass. However, the following problem still occurs. That is, since the cylindrical body is solid, a heavy load is imposed on it, and silicon carbide is not a problem, and quartz glass has a large strength problem. For this reason, a technique in which a through-hole is opened is also disclosed, but such a configuration greatly reduces the effect as a heat retaining cylinder. Moreover, the cylinders located on the upper and lower sides have the same thickness, and no thermal characteristics are considered in this surface. Therefore, the present invention cannot be created at all from such prior art.
【００１３】[0013]
【実施例】以下、図面を参照して本考案の好適な実施例
を例示的に詳しく説明する。但しこの実施例に記載され
ている構成部品の寸法、材質、形状、その相対的配置等
は特に特定的な記載がないかぎりは、この考案の範囲を
それに限定する趣旨ではなく、単なる説明例にすぎな
い。図１は、本考案の実施例に係わる縦型熱処理装置の
縦断面図である。図において、３は円筒ドーム状の炉心
管で、基台４上に設置可能に構成するとともに、該炉心
管３内の基台４中心部に保温筒２を介して、内部にウエ
ーハが積層配置された縦型収納治具１を設置する。一
方、前記縦型収納治具１設置位置と対応する炉心管３周
囲には螺旋管状の発熱体５を囲繞し、高周波加熱可能に
構成する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will now be described in detail with reference to the drawings. However, the dimensions, materials, shapes, relative arrangements, and the like of the components described in this embodiment are not intended to limit the scope of the present invention unless otherwise specified, and are merely illustrative examples. Only. FIG. 1 is a vertical sectional view of a vertical heat treatment apparatus according to an embodiment of the present invention. In the figure, reference numeral 3 denotes a cylindrical dome-shaped furnace core tube, which can be installed on a base 4, and a wafer is laminated inside the center of the base 4 in the furnace tube 3 via a heat insulating tube 2. The vertical storage jig 1 is placed. On the other hand, a helical tubular heating element 5 is surrounded around the furnace tube 3 corresponding to the installation position of the vertical storage jig 1 so that high-frequency heating is possible.
【００１４】一方前記炉心管３の上部にはガス導入管２
２が、又発熱体４囲繞位置下方の炉心管３周面上にはガ
ス導出管２１が夫々配設され、前記ガス導入管２２から
導入された処理ガスが収納治具1のスリット空隙を通っ
てウエーハ表面と接触した後、導出管２１より外部に排
出可能に構成されている。基台４は回転可能な駆動軸上
６に設置され、炉心管３と一体的に矢印方向に回転可能
に構成する。On the other hand, the gas introduction pipe 2
Gas outlet pipes 21 are disposed on the peripheral surface of the furnace core tube 3 below the surrounding position of the heating element 4, and the processing gas introduced from the gas inlet pipe 22 passes through the slit gap of the storage jig 1. After coming into contact with the wafer surface, it is configured to be able to be discharged to the outside from the outlet pipe 21. The base 4 is mounted on a rotatable drive shaft 6 and is configured to be rotatable integrally with the furnace tube 3 in the direction of the arrow.
【００１５】次に本考案の主要構成たる保温筒２、収納
治具１について説明する。保温筒２は、前記炉芯管３内
径より僅かに小なる外径を有する透明石英ガラス製円筒
体２０で形成され、上面を収納治具１が搭載可能な平面
状をなすとともに、内部に、多数の微小気泡を有する石
英ガラス性塑性体２３と、その周囲を囲繞する透明石英
ガラス製の囲繞体２４からなる保温体が充填されてい
る。次に前記保温体の製造手順について説明するに、先
ず上方が開口し、前記囲繞体と同形で且つ背高のみが大
なる石英製ルツボ内に石英微粉を投入し、真空炉中で13
00〜1600℃前後の温度で加熱する事により、内部に多数
の微小空間を有し、石英薄膜が縦横に張りめぐらされ
た、いわゆる発泡ガラス状の塑性体が形成される。 こ
の際前記石英微粉内にカーボン粉とともに水を混入して
泥状にした状態で、加熱させる事により更に多数の真空
微小空間を有する発泡ガラス状の塑性体31が形成出来、
好ましい。 そしてこのようにして形成された塑性体２
３の表面を熱溶融させて薄膜の囲繞体２４を形成する。Next, the heat retaining cylinder 2 and the storage jig 1 which are main components of the present invention will be described. The heat retaining cylinder 2 is formed of a transparent quartz glass cylindrical body 20 having an outer diameter slightly smaller than the inner diameter of the furnace core tube 3, and has a flat upper surface on which the storage jig 1 can be mounted. A heat insulator composed of a quartz glass plastic body 23 having a large number of microbubbles and a transparent quartz glass surrounding body 24 surrounding the periphery thereof is filled. Next, the manufacturing procedure of the heat retaining body will be described. First, quartz fine powder is charged into a quartz crucible having an upper opening, having the same shape as the surrounding body, and having only a large height.
By heating at a temperature of about 00 to 1600 ° C., a so-called foamed glass-like plastic body having a large number of minute spaces inside and having a quartz thin film stretched vertically and horizontally is formed. At this time, in a state in which water is mixed together with the carbon powder in the quartz fine powder to form a mud, by heating, a foamed glass-like plastic body 31 having more vacuum minute spaces can be formed,
preferable. And the plastic body 2 thus formed
3 is heat-melted to form a thin film surrounding body 24.
【００１６】収納治具１は石英ガラス材からなり、ウエ
ーハ１０外形より僅かに大なる外形を有する下部端板１
１と、該端板の半円側の片側に寄せてその周縁より立設
し、内側にウエーハピッチ間隔と対応するピッチ間隔で
ウエーハ支持溝１２が刻設された複数本の支柱１３と、
該支柱１３上に固設され前記端板と同径の円筒状中空体
１５からなる。中空体１５は、前記保温筒２と異なり、
内部に気泡を含有させ白濁化させた石英ガラス製円筒体
１５で形成され、内部に、前記保温筒２と同様に多数の
微小気泡を有する石英ガラス性塑性体２３と、その周囲
を囲繞する透明石英ガラス製の囲繞体２４からなる保温
体が充填封止されている。そして前記保温筒２はその上
面が発熱体５の下端とほぼ一致させ、一方中空体１５下
面が発熱体５の上端とほぼ一致する如く前記支柱１３高
さを設定する。The storage jig 1 is made of quartz glass and has a lower end plate 1 having an outer shape slightly larger than the outer shape of the wafer 10.
1, and a plurality of columns 13 having wafer support grooves 12 engraved on one side of the semicircular side of the end plate, standing upright from the peripheral edge thereof, and having a wafer support groove 12 at a pitch interval corresponding to a wafer pitch interval.
It comprises a cylindrical hollow body 15 fixed on the support 13 and having the same diameter as the end plate. The hollow body 15 is different from the heat retaining cylinder 2,
A quartz glass plastic body 23 formed of a quartz glass cylindrical body 15 containing bubbles therein and made opaque and having a large number of microbubbles similarly to the heat retaining cylinder 2 therein, and a transparent surrounding the periphery thereof. A heat insulator composed of an enclosure 24 made of quartz glass is filled and sealed. The height of the support column 13 is set such that the upper surface of the heat retaining cylinder 2 substantially coincides with the lower end of the heating element 5, while the lower surface of the hollow body 15 approximately coincides with the upper end of the heating element 5.
【００１７】かかる実施例によれば前記発熱体５の加熱
域の上下境界域より僅かに外れた域に中空体１５と保温
筒２が位置することになる為に、気泡を含有させた石英
ガラス製円筒体１５１で形成しても又微小気泡を有する
塑性体２３を密封封止しても破裂損傷することはなく、
前記した本考案の作用を円滑に達成し得るとともに、密
封封止したために前記中空体等よりパーティクルの発生
を完全に防ぐことが出来る。According to this embodiment, since the hollow body 15 and the heat retaining cylinder 2 are located slightly outside the upper and lower boundary areas of the heating area of the heating element 5, quartz glass containing bubbles is used. Even if it is formed of the cylindrical body 151, and even if the plastic body 23 having the microbubbles is hermetically sealed, no rupture damage occurs,
The above-described effect of the present invention can be smoothly achieved, and the hermetically sealed structure can completely prevent the generation of particles from the hollow body or the like.
【００１８】また上記構成により、炉心管３の内部のウ
エーハ熱処理領域である均熱部は、前記炉心管３を囲繞
する発熱体５により１１００℃〜１２００℃の所定温度
±α℃の管理温度のもとに管理された均一にして高温の
ウエーハの熱処理領域を形成する。このような安定し且
つ均一な温度分布状態では、例えば拡散処理に必要な精
密温度制御が可能となり高品質の熱処理が可能となる。Further, according to the above configuration, the soaking section, which is a wafer heat treatment area inside the furnace tube 3, is controlled by the heating element 5 surrounding the furnace tube 3 to a predetermined temperature of 1100 ° C. to 1200 ° C. ± α ° C. A heat treatment region of a high-temperature wafer is formed in a uniform and controlled manner. In such a stable and uniform temperature distribution state, for example, precise temperature control necessary for the diffusion process can be performed, and high-quality heat treatment can be performed.
【００１９】[0019]
【考案の効果】以上記載した如く本考案によれば、縦型
熱処理装置による半導体ウエーハの拡散熱処理におい
て、下部保温筒に設置される収納治具の上部に断熱性の
中空体を一体構造として固設したため、前記ウエーハ処
理領域の均熱化を容易に達成し得ると共に、下部保温筒
と上部保温筒が収納治具の上下両面側に密接配置されて
いるために、均熱域を収納治具全長の限度一杯取ること
が出来、多数枚のウエーハ等を効率よく熱処理すること
が出来る。又収納治具１の上部に上部保温体（中空体）
を取りつけるも該保温体は中空であり、下部保温体より
薄肉に形成されているために強度性も維持しつつ、多数
枚の半導体ウエーハを効率よく熱処理可能となる。等の
種々の著効を有す。As described above, according to the present invention, in the diffusion heat treatment of a semiconductor wafer by a vertical heat treatment apparatus, a heat insulating hollow body is integrally formed on an upper part of a storage jig installed in a lower heat insulating cylinder. The heat treatment area can be easily achieved, and the lower heat insulation cylinder and the upper heat insulation cylinder are closely arranged on the upper and lower surfaces of the storage jig. The entire length can be taken as much as possible, and a large number of wafers can be efficiently heat-treated. In addition, an upper heat insulator (hollow body) is provided above the storage jig 1.
However, since the heat insulator is hollow and is formed thinner than the lower heat insulator, it is possible to efficiently heat-treat a large number of semiconductor wafers while maintaining strength. And so on.
【図１】本考案の実施例に係わる縦型熱処理装置の縦断
面図である。FIG. 1 is a vertical sectional view of a vertical heat treatment apparatus according to an embodiment of the present invention.
【図２】従来技術に係る縦型熱処理装置の縦断面図であ
る。FIG. 2 is a longitudinal sectional view of a vertical heat treatment apparatus according to the related art.
１５ 中空体 １０ 半導体ウエーハ １ 収納治具 ２ 保温筒 ３ 炉心管 15 Hollow body 10 Semiconductor wafer 1 Storage jig 2 Insulation tube 3 Core tube
───────────────────────────────────────────────────── フロントページの続き (72)考案者 横井 千枝 福井県武生市萱谷町第３号１番地４ 株 式会社福井信越石英内 (72)考案者 東川 洋子 福井県武生市萱谷町第３号１番地４ 株 式会社福井信越石英内 (72)考案者 森下 美智子 福井県武生市萱谷町第３号１番地４ 株 式会社福井信越石英内 (72)考案者 徳永 直樹 福井県武生市萱谷町第３号１番地４ 株 式会社福井信越石英内 (56)参考文献 特開 昭60−140817（ＪＰ，Ａ) 実開 昭63−55532（ＪＰ，Ｕ) ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Chie Yokoi No. 3, Kaitani-cho, Takefu-shi, Fukui Prefecture No. 3 1-4 Shinetsu Fukui Co., Ltd. (72) Inventor Yoko Higashikawa 3-1 Kayaya-cho, Takefu-shi, Fukui Prefecture No. 4 Co., Ltd. Shin-Etsu Quartz in Fukui (72) creator Michiko Morishita No. 3 Kayaya-cho, Takefu-shi, Fukui Prefecture No. 1 No. 4 Co., Ltd. Shin-Etsu Quartz in Fukui (72) creator Naoki Tokunaga 3 No. 1 No. 4 Fukui Shin-Etsu Quartz Co., Ltd. (56) References JP-A-60-140817 (JP, A) JP-A-63-55532 (JP, U)
Claims (3)
され、半導体ウエーハ又は液晶等のガラス基板等の板状
体（以下ウエーハ等という）を上下に積層配置可能に構
成された縦型収納治具を具えた縦型熱処理装置におい
て、 前記ウエーハ等を積層支持する支持溝を刻設した複数の
支柱の下面側に板状端板を、又上面側に、石英ウールま
たは石英発泡体を充填した中空体を夫々固設すると共
に、前記中空体肉厚を前記保温筒肉厚より小に設定した
縦型石英ガラス製収納治具を具えた事を特徴とする縦型
熱処理装置1. A vertical type which is installed on a heat retaining tube arranged at the bottom of a furnace tube and is configured so that a plate-like body (hereinafter, referred to as a wafer or the like) such as a semiconductor wafer or a glass substrate such as a liquid crystal can be vertically stacked. In a vertical heat treatment apparatus provided with a storage jig, a plate-like end plate is provided on a lower surface side of a plurality of pillars provided with support grooves for laminating and supporting the wafer and the like, and quartz wool or quartz foam is provided on an upper surface side. A vertical heat treatment apparatus characterized by comprising a vertical quartz glass storage jig in which each of the filled hollow bodies is fixed and the thickness of the hollow body is set smaller than the thickness of the heat retaining cylinder.
ヒータ加熱域の上縁側若しくは該加熱域より外れた区域
に位置するように構成した請求項１記載の縦型熱処理装
置2. The vertical heat treatment apparatus according to claim 1, wherein the hollow body is located at an upper edge side of a heater heating area surrounded by a furnace tube or at an area outside the heating area.
しくは不透明に形成した請求項１記載の縦型熱処理装置3. The vertical heat treatment apparatus according to claim 1, wherein air bubbles are mixed into said hollow body so as to be translucent or opaque.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3668792U JP2563981Y2 (en) | 1992-05-01 | 1992-05-01 | Vertical heat treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3668792U JP2563981Y2 (en) | 1992-05-01 | 1992-05-01 | Vertical heat treatment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0590940U JPH0590940U (en) | 1993-12-10 |
| JP2563981Y2 true JP2563981Y2 (en) | 1998-03-04 |
Family
ID=12476745
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3668792U Expired - Fee Related JP2563981Y2 (en) | 1992-05-01 | 1992-05-01 | Vertical heat treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2563981Y2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10163122A (en) * | 1996-11-29 | 1998-06-19 | Fukui Shinetsu Sekiei:Kk | Semiconductor wafer heat treating apparatus and furnace core tube |
| KR100474735B1 (en) * | 2002-06-29 | 2005-03-10 | 동부아남반도체 주식회사 | Boat covering cap on the top/bottom |
| JP2008028306A (en) * | 2006-07-25 | 2008-02-07 | Hitachi Kokusai Electric Inc | Heat treatment equipment |
| JP6083766B2 (en) * | 2015-07-03 | 2017-02-22 | 株式会社エピクエスト | NH3 atmosphere high temperature heating device |
-
1992
- 1992-05-01 JP JP3668792U patent/JP2563981Y2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0590940U (en) | 1993-12-10 |
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