JPH06310455A - Semiconductor heat treatment device - Google Patents
Semiconductor heat treatment deviceInfo
- Publication number
- JPH06310455A JPH06310455A JP9636393A JP9636393A JPH06310455A JP H06310455 A JPH06310455 A JP H06310455A JP 9636393 A JP9636393 A JP 9636393A JP 9636393 A JP9636393 A JP 9636393A JP H06310455 A JPH06310455 A JP H06310455A
- Authority
- JP
- Japan
- Prior art keywords
- furnace
- jig
- heat
- furnace core
- core tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体熱処理装置に関
し、特に炉芯管を垂直に設置する縦型熱処理装置（以下
縦型拡散炉と称す）に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor heat treatment apparatus, and more particularly to a vertical heat treatment apparatus for vertically installing a furnace core tube (hereinafter referred to as vertical diffusion furnace).
【０００２】[0002]
【従来の技術】従来、この種の縦型拡散炉は、図３の縦
断面図に示す様に、ウェーハ２を搭載したウェーハ装填
治具１１をウェーハ装填治具支持台１０に載せ、ウェー
ハ装填治具移動装置１２により炉芯管１の炉口から出し
入れする。炉芯管１に挿入されたウェーハ２はヒーター
３により加熱され、反応気体導入管９からの反応気体に
よって拡散処理が行われる。2. Description of the Related Art Conventionally, in this type of vertical diffusion furnace, as shown in the longitudinal sectional view of FIG. The jig moving device 12 moves the furnace core tube 1 in and out. The wafer 2 inserted in the furnace core tube 1 is heated by the heater 3, and a diffusion process is performed by the reaction gas from the reaction gas introduction pipe 9.
【０００３】その際、炉芯管１内の熱によってウェーハ
装填治具移動装置１２及び炉芯管支持治具７さらに遮蔽
治具が加熱され、加熱により変形しないように炉芯管支
持治具７内に冷却水配管６から冷却水を流し、露光部分
を室温〜１５０℃程度に冷却している。その反応気体及
び反応生成物は炉口部の温度低下により、一部は気体と
して、また残りは液体化して排気用配管５及び液体排出
用配管１７を通して炉芯管外に排出される機構を備えて
いた。At this time, the wafer loading jig moving device 12 and the furnace core tube supporting jig 7 and the shielding jig are heated by the heat in the furnace core tube 1, and the furnace core tube supporting jig 7 is prevented from being deformed by heating. Cooling water is made to flow through the cooling water pipe 6 to cool the exposed portion to room temperature to about 150 ° C. The reaction gas and the reaction product are equipped with a mechanism in which a part of the reaction gas and the reaction product are liquefied due to the temperature decrease in the furnace mouth part and the rest is liquefied and discharged to the outside of the core tube through the exhaust pipe 5 and the liquid discharge pipe 17. Was there.
【０００４】[0004]
【発明が解決しようとする課題】この従来の縦型拡散炉
は、炉口部分を冷却する構造である為、反応気体及び反
応生成物は炉口部の温度低下により、一部は気体，残り
は液体化する。そのため、炉口部分の炉芯管支持治具７
及びウェーハ装填治具移動装置１２に液体が付着し、排
出が十分に行われないという問題点がある。Since this conventional vertical diffusion furnace has a structure for cooling the furnace opening portion, the reaction gas and reaction products are partially gas and remaining due to the temperature decrease of the furnace opening portion. Becomes liquid. Therefore, the furnace core tube support jig 7 at the furnace mouth portion
Also, there is a problem that the liquid is attached to the wafer loading jig moving device 12 and the discharge is not sufficiently performed.
【０００５】また、付着した液体が膜を生成し、さらに
冷却される為固体化も起こり、炉口部の汚れやウェーハ
装填治具移動装置１２の誤動作を引き起こすという問題
点がある。Further, since the adhered liquid forms a film and is further cooled, solidification also occurs, which causes the contamination of the furnace opening and the malfunction of the wafer loading jig moving device 12.
【０００６】さらに、ウェーハ装填治具１１を炉芯管１
から取り出すとき、ウェーハ２及びウェーハ装填治具１
１の熱で一旦液体化および固体化した付着物や汚れが再
び気体化するため、ウェーハ２への再付着による異常拡
散が起こり、特性異常が発生し拡散歩留りが低下すると
いう問題点がある。Further, the wafer loading jig 11 is attached to the furnace core tube 1.
Wafer 2 and wafer loading jig 1
Since the deposits and stains once liquefied and solidified by the heat of 1 are vaporized again, abnormal diffusion occurs due to redeposition on the wafer 2, and abnormal characteristics occur and the diffusion yield decreases.
【０００７】[0007]
【課題を解決するための手段】本発明の半導体熱処理装
置は、拡散処理工程において反応気体と反応生成物を炉
口部分で気体状態に保つ為に、炉芯管の炉口部分の炉内
側に熱及び赤外線を反射する金膜を有する熱反射治具を
備えている。A semiconductor heat treatment apparatus according to the present invention is provided inside a furnace at a furnace mouth portion of a furnace core tube in order to keep a reaction gas and a reaction product in a gas state at a furnace mouth portion in a diffusion treatment step. A heat reflection jig having a gold film that reflects heat and infrared rays is provided.
【０００８】[0008]
【実施例】次に本発明について図面を参照して説明す
る。The present invention will be described below with reference to the drawings.
【０００９】図１は本発明の一実施例の縦型拡散炉の縦
断面図である。図において、ウェーハ２に不純物を拡散
するための反応気体を反応気体導入管９より導入し、反
応気体及び反応気体の化学反応によって生じた反応生成
物はヒーター３で加熱された炉芯管１内を気体として通
り、一部はウェーハに拡散し、残りは炉口部分に到達す
る。炉芯管１の炉口部分にある反応気体導入管９と炉芯
管１との接合部の上部から炉口下端までの炉内領域と、
炉芯管支持治具７とウェーハ装填治具支持台１０とウェ
ーハ装填治具移動装置１２の炉内側に、熱及び赤外線を
反射する金膜をコーティングした熱反射治具４を設け
る。そのため、炉口部分はヒーター加熱部分と同程度の
温度となり、炉口部分に到達した反応気体及び反応生成
物は、液体化及び固体化することなく気体状態で排気用
配管５から縦型拡散炉外に排気される構造になってい
る。FIG. 1 is a vertical sectional view of a vertical diffusion furnace according to an embodiment of the present invention. In the figure, a reaction gas for diffusing impurities into a wafer 2 is introduced through a reaction gas introduction pipe 9, and the reaction gas and a reaction product generated by a chemical reaction of the reaction gas are heated in a furnace core tube 1 by a heater 3. As a gas, part of which diffuses to the wafer, and the rest reaches the furnace opening. An in-furnace region from an upper portion of a joint between the reaction gas introduction pipe 9 and the furnace core tube 1 at the furnace mouth portion of the furnace core tube 1 to a lower end of the furnace mouth;
A heat reflection jig 4 coated with a gold film that reflects heat and infrared rays is provided inside the furnace of the furnace core tube support jig 7, the wafer loading jig support base 10, and the wafer loading jig moving device 12. Therefore, the temperature of the furnace opening becomes almost the same as that of the heater heating part, and the reaction gas and reaction products reaching the furnace opening part are in a gas state without being liquefied and solidified from the exhaust pipe 5 through the vertical diffusion furnace. The structure is such that it is exhausted to the outside.
【００１０】図２は金膜をコーティングした熱反射治具
４の部分拡大断面図である。石英管１６に金膜１４を
０．０１〜０．２μｍコーティングし、金による汚染を
防止するため石英管１５を保護管にした熱反射治具４を
炉芯管１の内側に取付ける。金膜１４の溶解防止用およ
び遮蔽治具８の冷却用として、熱反射治具用冷却装置１
３と冷却水配管６を配置している。FIG. 2 is a partially enlarged sectional view of the heat reflecting jig 4 coated with a gold film. The quartz tube 16 is coated with the gold film 14 in an amount of 0.01 to 0.2 μm, and the heat reflection jig 4 using the quartz tube 15 as a protective tube is attached to the inside of the furnace core tube 1 in order to prevent contamination by gold. A cooling device 1 for a heat-reflecting jig for preventing dissolution of the gold film 14 and cooling the shielding jig 8.
3 and cooling water pipe 6 are arranged.
【００１１】[0011]
【発明の効果】以上に説明した様に本発明は、縦型拡散
炉の炉口部分に熱及び赤外線を反射する金膜を設けたの
で、不純物拡散に使用した反応気体及び反応生成物を気
体状態で縦型拡散炉外に排気することができる。また、
反応気体及び反応生成物による炉口部の汚れや、ウェー
ハ装填治具移動装置の誤動作を防止することができる。
また、炉口部の汚れや付着物がウェーハ２へ再付着しな
くなるので、特性異常及び歩留りの低下を防止すること
ができる。As described above, according to the present invention, since the gold film for reflecting heat and infrared rays is provided at the furnace opening portion of the vertical diffusion furnace, the reaction gas and the reaction product used for the impurity diffusion are gas. It can be exhausted outside the vertical diffusion furnace in this state. Also,
It is possible to prevent the furnace opening from being contaminated by the reaction gas and the reaction product and prevent the wafer loading jig moving device from malfunctioning.
Further, since dirt and deposits on the furnace opening are not redeposited on the wafer 2, it is possible to prevent abnormal characteristics and a decrease in yield.
【図１】本発明の一実施例を示す縦断面図である。FIG. 1 is a vertical sectional view showing an embodiment of the present invention.
【図２】図１に示した熱反射治具の部分拡大断面図であ
る。2 is a partially enlarged cross-sectional view of the heat reflection jig shown in FIG.
【図３】従来の熱処理装置の縦断面図である。FIG. 3 is a vertical sectional view of a conventional heat treatment apparatus.
１ 炉芯管 ２ ウェーハ ３ ヒーター ４ 熱反射治具 ５ 排気用配管 ６ 冷却水配管 ７ 炉芯管支持治具 ８ 遮蔽治具 ９ 反応気体導入管 １０ ウェーハ装填治具支持台 １１ ウェーハ装填治具 １２ ウェーハ装填治具移動装置 １３ 熱反射治具用冷却装置 １４ 金膜 １５ 石英管 １６ 石英管 １７ 液体排出用配管 1 Furnace Core Tube 2 Wafer 3 Heater 4 Heat Reflecting Jig 5 Exhaust Pipe 6 Cooling Water Piping 7 Furnace Core Tube Supporting Jig 8 Shielding Jig 9 Reactive Gas Introducing Tube 10 Wafer Loading Jig Support 11 Wafer Loading Jig 12 Wafer loading jig moving device 13 Cooling device for heat reflection jig 14 Gold film 15 Quartz tube 16 Quartz tube 17 Liquid discharge pipe
Claims (1)
散工程に使用する半導体熱処理装置において、前記炉芯
管の炉口部分の炉内側に熱及び赤外線を反射する金膜を
有する熱反射治具を備えたことを特徴とする半導体熱処
理装置。1. A semiconductor heat treatment apparatus in which a furnace core tube is installed vertically and used in a diffusion process of a semiconductor device, wherein a heat having a gold film for reflecting heat and infrared rays is provided inside a furnace at a furnace mouth portion of the furnace core tube. A semiconductor heat treatment apparatus comprising a reflection jig.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9636393A JPH06310455A (en) | 1993-04-23 | 1993-04-23 | Semiconductor heat treatment device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9636393A JPH06310455A (en) | 1993-04-23 | 1993-04-23 | Semiconductor heat treatment device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06310455A true JPH06310455A (en) | 1994-11-04 |
Family
ID=14162909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9636393A Withdrawn JPH06310455A (en) | 1993-04-23 | 1993-04-23 | Semiconductor heat treatment device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06310455A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014053550A (en) * | 2012-09-10 | 2014-03-20 | Koyo Thermo System Kk | Thermal treatment apparatus |
-
1993
- 1993-04-23 JP JP9636393A patent/JPH06310455A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014053550A (en) * | 2012-09-10 | 2014-03-20 | Koyo Thermo System Kk | Thermal treatment apparatus |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20000704 |