JPH0766236A - Multilayer-coated bonding wire for semiconductor element and semiconductor device - Google Patents

Multilayer-coated bonding wire for semiconductor element and semiconductor device

Info

Publication number
JPH0766236A
JPH0766236A JP5216153A JP21615393A JPH0766236A JP H0766236 A JPH0766236 A JP H0766236A JP 5216153 A JP5216153 A JP 5216153A JP 21615393 A JP21615393 A JP 21615393A JP H0766236 A JPH0766236 A JP H0766236A
Authority
JP
Japan
Prior art keywords
wire
bonding wire
semiconductor device
bonding
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5216153A
Other languages
Japanese (ja)
Inventor
Takeaki Abe
武明 安倍
Kenichi Kurihara
健一 栗原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP5216153A priority Critical patent/JPH0766236A/en
Publication of JPH0766236A publication Critical patent/JPH0766236A/en
Pending legal-status Critical Current

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Classifications

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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/4569—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To provide a new bonding wire which is composed of one kind of metal material, which eliminates a drawback in conventional wires of a uniform structure and in which there is no fear of the degradation of a transmission characteristic and to provide a semiconductor device formed by using the bonding wire. CONSTITUTION:A metal wire in a wire diameter of about 25mum is used as a core wire 1, an insulating film 2 in a thickness of 2mum is formed on the outer circumference of the core wire 1, a metal-conductor film 3 in a thickness of 0.5mum is formed additionally on its outside, and a bonding wire (a) of a multilayer-coated structure is manufactured. BY using the bonding wire (a), one end of the core wire 1 is connected to an electrode 5 by a ball bonding operation, the other end is connected to a signal lead 6 by a wedge bonding operation, many electrodes 5 on a semiconductor chip 4 are bonded to signal leads 6 formed so as to correspond to the respective electrodes 5, the metal- conductor film 3 is connected to a grounding lead 7, and a semiconductor device is manufactured.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は半導体素子用ボンディン
グワイヤ、詳しくは、半導体装置の製造において半導体
チップの電極と外部リードとを電気的に接続する際に用
いるボンディングワイヤに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding wire for a semiconductor element, and more particularly to a bonding wire used for electrically connecting an electrode of a semiconductor chip and an external lead in the manufacture of a semiconductor device.

【０００２】[0002]

【従来の技術】半導体装置の製造における組立工程で
は、所定の集積回路を形成した半導体チップ上の多数の
電極と、各電極に対応して多数設けられ実装時に接続端
子として機能する外部リードとを接続する方法として、
両者の間に導電性の金属ワイヤをループ状に張設するワ
イヤボンディング技術が一般に採用されている。2. Description of the Related Art In an assembly process of manufacturing a semiconductor device, a large number of electrodes on a semiconductor chip on which a predetermined integrated circuit is formed and a large number of external leads provided corresponding to the respective electrodes and functioning as connection terminals during mounting are provided. As a way to connect
A wire bonding technique in which a conductive metal wire is stretched between the two in a loop shape is generally adopted.

【０００３】[0003]

【発明が解決しようとする課題】しかし乍ら、従来用い
られているボンディングワイヤは所望の一種類の金属材
料からなる均質構造のものであることから特性インピー
ダンスが高く、他の回路との整合が難しいためにワイヤ
両端において高周波信号が反射されて伝送特性の劣化を
招くという欠点があった。However, since the conventionally used bonding wire has a homogeneous structure made of one desired kind of metal material, it has a high characteristic impedance and is not easily matched with other circuits. Since it is difficult, a high frequency signal is reflected at both ends of the wire, resulting in deterioration of transmission characteristics.

【０００４】本発明はこのような従来事情に鑑みてなさ
れたものであり、従来の一種類の金属材料からなる均質
構造のワイヤが有する欠点を解消して、伝送特性の劣化
を招く恐れのない新規なボンディングワイヤを提供する
ことを目的とする。The present invention has been made in view of such conventional circumstances, and eliminates the disadvantage of the conventional wire having a homogeneous structure made of one kind of metal material, and there is no fear of causing deterioration of transmission characteristics. It is intended to provide a new bonding wire.

【０００５】[0005]

【課題を解決するための手段】以上の目的を達成するた
めに、本発明のボンディングワイヤは、金属導体からな
る芯線を絶縁体で被覆して絶縁すると共に、その絶縁被
膜の外側に金属導体被膜を形成してなる多層被覆ワイヤ
であることを特徴とする。このような多層構造とするこ
とによって絶縁被膜が誘電体として作用し、外側の金属
導体被膜を接地することによって高周波信号の内部反射
を抑制する効果を発揮し、高周波特性を改善することが
できる。In order to achieve the above object, the bonding wire of the present invention is such that a core wire made of a metal conductor is covered with an insulator to insulate the core wire, and the metal conductor coating is provided outside the insulation coating. It is a multi-layer coated wire formed by forming. With such a multi-layer structure, the insulating film acts as a dielectric, and the outer metal conductor film is grounded to exert an effect of suppressing internal reflection of a high frequency signal, thereby improving high frequency characteristics.

【０００６】上記芯線は従来のボンディングワイヤの成
形材料として知られている金属元素、即ちＡｕ，Ａｇ，
Ｃｕ，Ａｌ，Ｐｄ，Ｐｔ，Ｐｂの中の１種、又はその金
属元素を主体とする合金を用いる。The core wire is made of metal elements known as molding materials for conventional bonding wires, namely Au, Ag,
One of Cu, Al, Pd, Pt, and Pb, or an alloy mainly containing the metal element is used.

【０００７】絶縁体は誘電体として作用するもので、誘
電率が高く、誘電正接が低く、かつ芯線を被覆可能な合
成樹脂が好ましい。例えばポリウレタン、ホルマール樹
脂、ポリエステル、ポリエチレン、ポリイミド、エポキ
シ樹脂、ポリ四弗化エチレン等が挙げられる。The insulator acts as a dielectric, and is preferably a synthetic resin having a high dielectric constant, a low dielectric loss tangent, and capable of covering the core wire. Examples thereof include polyurethane, formal resin, polyester, polyethylene, polyimide, epoxy resin, and polytetrafluoroethylene.

【０００８】絶縁被膜の外側に設ける金属導体被膜は、
芯線と同じ材料、即ちＡｕ，Ａｇ，Ｃｕ，Ａｌ，Ｐｄ，
Ｐｔ，Ｐｂの中の１種、又はその金属元素を主体とする
合金が使用できる。金属導体被膜を設ける方法は、材質
に応じて無電解めっき，電解めっき，真空蒸着，スパッ
タリング等の手法を適宜選択して行うことができる。The metal conductor coating provided on the outside of the insulating coating is
The same material as the core wire, namely Au, Ag, Cu, Al, Pd,
One of Pt and Pb, or an alloy mainly containing the metal element can be used. The method of providing the metal conductor coating can be performed by appropriately selecting a method such as electroless plating, electrolytic plating, vacuum deposition, or sputtering depending on the material.

【０００９】[0009]

【実施例】以下、本発明の一実施例を図１乃至図３に基
づいて説明する。図１は本実施例にかかるボンディング
ワイヤａの断面構造を表す斜視図、図２は同ワイヤａを
ボールボンディングする際に、ワイヤ先端をボールアッ
プした状態を示す。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS. FIG. 1 is a perspective view showing a cross-sectional structure of a bonding wire a according to this embodiment, and FIG. 2 shows a state in which the tip of the wire is balled up when the wire a is ball-bonded.

【００１０】Ａｕ，Ａｇ，Ｃｕ，Ａｌ，Ｐｄ，Ｐｔ，Ｐ
ｂの中の１種、又はその金属元素を主体とする合金を用
いて、従来のワイヤと同様の方法により線径25μｍ程度
の芯線１を作製し、この芯線１の外周に絶縁被膜２を形
成すると共に、さらにその外側に金属導体被膜３を形成
して多層被覆構造のボンディングワイヤａを得た（図
１，２参照）。Au, Ag, Cu, Al, Pd, Pt, P
A core wire 1 having a wire diameter of about 25 μm is manufactured by using one of the materials b, or an alloy mainly containing the metal element, and an insulating coating 2 is formed on the outer circumference of the core wire 1. At the same time, the metal conductor coating 3 was further formed on the outer side thereof to obtain a bonding wire a having a multilayer coating structure (see FIGS. 1 and 2).

【００１１】絶縁被膜２は誘電率が高く、誘電正接が低
い絶縁体で且つ芯線１の外周を被覆可能な合成樹脂、例
えばポリウレタン，ホルマール樹脂，ポリエステル，ポ
リエチレン，ポリイミド，エポキシ樹脂，ポリ四弗化エ
チレン等からなり、上記芯線１の外周に厚さ２μｍ程度
に被覆する。The insulating coating 2 is an insulator having a high dielectric constant and a low dielectric loss tangent, and is a synthetic resin capable of coating the outer periphery of the core wire 1, for example, polyurethane, formal resin, polyester, polyethylene, polyimide, epoxy resin, polytetrafluoride. It is made of ethylene or the like, and the outer periphery of the core wire 1 is coated to a thickness of about 2 μm.

【００１２】金属導体被膜３は芯線１と同じ金属元素若
しくはその金属元素を主体とする合金からなり、無電解
めっき，電解めっき，真空蒸着，スパッタリング等の手
法を適宜選択して、上記絶縁被膜２の外周に厚さ0.5 μ
ｍ程度に被覆する。The metal conductor coating 3 is made of the same metal element as that of the core wire 1 or an alloy mainly composed of the metal element, and the insulating coating 2 is formed by appropriately selecting a method such as electroless plating, electrolytic plating, vacuum deposition, or sputtering. 0.5 μ around the periphery
Cover about m.

【００１３】このような構成からなる多層被覆ボンディ
ングワイヤａを用いて、芯線１の一端を電極５にボール
ボンディングで接続し他端は信号リード６にウエッジボ
ンディングで接続して、半導体チップ４上の多数の電極
５と各電極５に対応せしめて形成した信号リード６とを
ボンディングすると共に、金属導体３を接地リード７に
接続せしめて半導体装置を作製した（図３参照）。On the semiconductor chip 4, one end of the core wire 1 is connected to the electrode 5 by ball bonding and the other end is connected to the signal lead 6 by wedge bonding by using the multilayer coated bonding wire a having the above structure. A semiconductor device was manufactured by bonding a large number of electrodes 5 and signal leads 6 formed corresponding to each electrode 5 and connecting the metal conductor 3 to the ground lead 7 (see FIG. 3).

【００１４】この半導体装置を評価したところ、伝送特
性の劣化がほとんどなく、さらに隣合うボンディングワ
イヤａ，ａ相互間及びボンディングワイヤａと半導体チ
ップ４のエッジ4aとの間での接触によるショート、並び
に夫々のボンディングワイヤａにおけるループ異常等の
問題は一切なく、良好な動作を確認した。When this semiconductor device was evaluated, there was almost no deterioration in transmission characteristics, and there were short circuits due to contact between adjacent bonding wires a, a and between bonding wire a and edge 4a of semiconductor chip 4, and There was no problem such as loop abnormality in each bonding wire a, and good operation was confirmed.

【００１５】[0015]

【発明の効果】本発明のボンディングワイヤは以上説明
したように、金属導体からなる芯線の周囲を絶縁体で被
覆し、さらにその外側に金属導体被膜を形成した多層被
覆構造としたので、絶縁体が誘電体として作用し、外側
の金属導体被膜を接地することによって高周波信号の内
部反射を抑制する効果を発揮し、高周波特性を改善する
ことができる。従って、この多層被覆ボンディングワイ
ヤを用いることで、従来のワイヤの欠点を解消し、伝送
特性の劣化を招く恐れのない信頼性の高い半導体装置を
提供することができる。As described above, the bonding wire of the present invention has a multi-layer coating structure in which the core wire made of a metal conductor is covered with an insulator, and the metal conductor coating is formed on the outside of the core wire. Acts as a dielectric, and by grounding the outer metal conductor coating, the effect of suppressing the internal reflection of a high frequency signal is exhibited, and the high frequency characteristics can be improved. Therefore, by using this multilayer-coated bonding wire, it is possible to solve the drawbacks of the conventional wire and provide a highly reliable semiconductor device that does not cause the deterioration of the transmission characteristics.

【図面の簡単な説明】[Brief description of drawings]

【図１】 本発明多層被覆ボンディングワイヤの断面構
造を示す斜視図。FIG. 1 is a perspective view showing a cross-sectional structure of a multilayer coated bonding wire of the present invention.

【図２】 図１に示すボンディングワイヤを用いてボー
ルボンディングする際のボールアップした状態を示す断
面図。FIG. 2 is a cross-sectional view showing a ball-up state at the time of ball bonding using the bonding wire shown in FIG.

【図３】 図１に示すボンディングワイヤを用いてなる
半導体装置の要部拡大断面図。3 is an enlarged cross-sectional view of a main part of a semiconductor device using the bonding wire shown in FIG.

【符号の説明】[Explanation of symbols]

ａ：ボンディングワイヤ １：芯線
２：絶縁被膜 ３：金属導体被膜 ４：半導体チップ
５：電極 ６：信号リード ７：接地リード
８：基板a: Bonding wire 1: Core wire
2: Insulation film 3: Metal conductor film 4: Semiconductor chip
5: Electrode 6: Signal lead 7: Ground lead
8: Substrate

Claims (5)

【特許請求の範囲】[Claims] 【請求項１】 半導体素子における第１の位置と第２の
位置とを電気的に接続するボンディングワイヤであっ
て、金属導体からなる芯線を絶縁体で被覆して絶縁する
と共に、該絶縁被膜の外側に金属導体被膜を形成してな
ることを特徴とする多層被覆ボンディングワイヤ。1. A bonding wire for electrically connecting a first position and a second position in a semiconductor element, wherein a core wire made of a metal conductor is covered with an insulator to insulate the core wire, and A multilayer coated bonding wire comprising a metal conductor coating formed on the outside. 【請求項２】 上記芯線がＡｕ，Ａｇ，Ｃｕ，Ａｌ，Ｐ
ｄ，Ｐｔ，Ｐｂの中の１種又はそれを主体とする合金で
あることを特徴とする請求項１記載の多層被覆ボンディ
ングワイヤ。2. The core wire is Au, Ag, Cu, Al, P
The multi-layer coated bonding wire according to claim 1, which is one of d, Pt, and Pb or an alloy containing them as a main component. 【請求項３】 上記絶縁体が合成樹脂であることを特徴
とする請求項１記載の多層被覆ボンディングワイヤ。3. The multi-layer coated bonding wire according to claim 1, wherein the insulator is a synthetic resin. 【請求項４】 上記金属導体被膜がＡｕ，Ａｇ，Ｃｕ，
Ａｌ，Ｐｄ，Ｐｔ，Ｐｂの中の１種又はそれを主体とす
る合金であることを特徴とする請求項１記載の多層被覆
ボンディングワイヤ。4. The metal conductor coating is Au, Ag, Cu,
The multi-layer coated bonding wire according to claim 1, which is one of Al, Pd, Pt, and Pb or an alloy mainly containing the same. 【請求項５】 第１の位置と第２の位置とをボンディン
グワイヤで電気的に接続した半導体素子を封止してなる
半導体装置であって、前記ボンディングワイヤが請求項
１又は２又は３又は４記載のものであることを特徴とす
る半導体装置。5. A semiconductor device comprising a semiconductor element having a first position and a second position electrically connected with a bonding wire to seal a semiconductor element, wherein the bonding wire is a semiconductor device. 4. A semiconductor device according to item 4.
JP5216153A 1993-08-31 1993-08-31 Multilayer-coated bonding wire for semiconductor element and semiconductor device Pending JPH0766236A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5216153A JPH0766236A (en) 1993-08-31 1993-08-31 Multilayer-coated bonding wire for semiconductor element and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5216153A JPH0766236A (en) 1993-08-31 1993-08-31 Multilayer-coated bonding wire for semiconductor element and semiconductor device

Publications (1)

Publication Number Publication Date
JPH0766236A true JPH0766236A (en) 1995-03-10

Family

ID=16684121

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5216153A Pending JPH0766236A (en) 1993-08-31 1993-08-31 Multilayer-coated bonding wire for semiconductor element and semiconductor device

Country Status (1)

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JP (1) JPH0766236A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100424169B1 (en) * 2001-06-28 2004-03-24 주식회사 하이닉스반도체 method for improving mechanical strength of gold wire
JP2008227126A (en) * 2007-03-13 2008-09-25 National Institute Of Advanced Industrial & Technology Fine coaxial wire, its manufacturing method, and semiconductor device
JP2009280917A (en) * 2004-02-06 2009-12-03 Kansai Engineering:Kk Wire
JP2010062395A (en) * 2008-09-04 2010-03-18 Sumitomo Metal Mining Co Ltd Copper bonding wire
JP2016524338A (en) * 2013-07-03 2016-08-12 ローゼンベルガー ホーフフレクベンツテクニーク ゲーエムベーハー ウント ツェーオー カーゲー Die package with low electromagnetic interference wiring

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100424169B1 (en) * 2001-06-28 2004-03-24 주식회사 하이닉스반도체 method for improving mechanical strength of gold wire
JP2009280917A (en) * 2004-02-06 2009-12-03 Kansai Engineering:Kk Wire
JP2008227126A (en) * 2007-03-13 2008-09-25 National Institute Of Advanced Industrial & Technology Fine coaxial wire, its manufacturing method, and semiconductor device
JP2010062395A (en) * 2008-09-04 2010-03-18 Sumitomo Metal Mining Co Ltd Copper bonding wire
JP2016524338A (en) * 2013-07-03 2016-08-12 ローゼンベルガー ホーフフレクベンツテクニーク ゲーエムベーハー ウント ツェーオー カーゲー Die package with low electromagnetic interference wiring

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