JPH07147301A - Method of bonding semiconductor chip - Google Patents
Method of bonding semiconductor chipInfo
- Publication number
- JPH07147301A JPH07147301A JP29309393A JP29309393A JPH07147301A JP H07147301 A JPH07147301 A JP H07147301A JP 29309393 A JP29309393 A JP 29309393A JP 29309393 A JP29309393 A JP 29309393A JP H07147301 A JPH07147301 A JP H07147301A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- substrate
- liquid crystal
- crystal panel
- thermal expansion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13452—Conductors connecting driver circuitry and terminals of panels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
Landscapes
- Wire Bonding (AREA)
- Liquid Crystal (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体素子の基板上へ
の実装方法に関し、特に高精度が得られる接続方法に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for mounting a semiconductor element on a substrate, and more particularly to a connection method with which high accuracy can be obtained.
【０００２】[0002]
【従来の技術】異方導電性接着シートを用いて半導体素
子を基板に接続する技術は、熱および圧力を加えるのみ
で狭ピッチ電極の接続が容易に得られるため近年広く用
いられるようになった。特に液晶表示装置における液晶
パネルへの駆動ＬＳＩの接続は透明電極と金属という異
種材料間の接続のため、ＬＳＩがボンディングされたテ
ープキャリアを異方導電性接着シートを用いて熱圧着接
続する方法が一般的である。次に図を用いて、従来の液
晶パネルと駆動ＬＳＩの接続方法を説明する。2. Description of the Related Art The technique of connecting a semiconductor element to a substrate using an anisotropic conductive adhesive sheet has been widely used in recent years because the connection of narrow-pitch electrodes can be easily obtained only by applying heat and pressure. . In particular, the connection of the driving LSI to the liquid crystal panel in the liquid crystal display device is a connection between the transparent electrodes and the dissimilar materials such as metal. Therefore, there is a method of thermocompression bonding the tape carrier to which the LSI is bonded using an anisotropic conductive adhesive sheet. It is common. Next, a conventional method of connecting a liquid crystal panel and a drive LSI will be described with reference to the drawings.
【０００３】駆動ＬＳＩはポリイミドなどのフィルムテ
ープ上に形成した銅箔のリードに半導体チップをボンデ
ィングしたいわゆるテープキャリアパッケージ（以後Ｔ
ＣＰと略す）の形状をしたものを用いる。図９に示すよ
うに液晶パネル２０の端子２１上に異方導電性接着シー
ト２２を仮止めした後ＴＣＰ２３の端子と液晶パネル端
子との位置整合を行い、異方導電性接着シート２２の粘
着性を利用して仮固定する。通常液晶パネルの端子１辺
につき複数個のＴＣＰ２３が接続されるためこの工程を
ＴＣＰ２３の個数だけ繰り返す。これは異方導電性接着
シート２２の熱硬化には一定の時間がかかるため時間当
たりの生産量を増大するため個々のＴＣＰ２３について
熱圧着工程を行わずに、少なくとも１辺のＴＣＰ２３は
同時に熱圧着工程を行うためである。A drive LSI is a so-called tape carrier package (hereinafter referred to as "T-carrier package") in which a semiconductor chip is bonded to a copper foil lead formed on a film tape such as polyimide.
The shape of (abbreviated as CP) is used. As shown in FIG. 9, after the anisotropic conductive adhesive sheet 22 is temporarily fixed on the terminals 21 of the liquid crystal panel 20, the terminals of the TCP 23 and the liquid crystal panel terminals are aligned and the adhesive property of the anisotropic conductive adhesive sheet 22 is adjusted. Use to temporarily fix. Since a plurality of TCPs 23 are normally connected to one side of the liquid crystal panel, this process is repeated for each TCP 23. Since it takes a certain amount of time for the anisotropic conductive adhesive sheet 22 to be thermoset, the production amount per hour is increased. Therefore, at least one side of the TCP 23 is thermocompressed at the same time without performing the thermocompression bonding process for each TCP 23. This is because the process is performed.
【０００４】次に図１０に示すように液晶パネル２０を
ステージ上に配置し、高温の加圧装置２５にてＴＣＰ２
３の端子上を加圧し異方導電性接着シート２２に圧力お
よび熱を与えることにより、異方導電性接着シート２２
中の導電粒子が液晶パネル２０とＴＣＰ２３の両電極間
に挟持された状態で接着剤が硬化し機械的かつ電気的な
接続を得る。Next, as shown in FIG. 10, the liquid crystal panel 20 is placed on the stage, and the TCP2 is applied by the high temperature pressurizing device 25.
3 by applying pressure and heat to the anisotropic conductive adhesive sheet 22 by applying pressure on the terminals of the anisotropic conductive adhesive sheet 22.
With the conductive particles inside being sandwiched between both electrodes of the liquid crystal panel 20 and the TCP 23, the adhesive cures and a mechanical and electrical connection is obtained.
【０００５】最近、液晶パネルは表示画素密度の上昇が
急速に進んでおり、それと共に駆動ＬＳＩとの接続端子
電極の狭ピッチ化が進んでいる。特に表示のカラー化に
より画素密度が３倍になった結果端子電極ピッチは３分
の１になり、液晶パネル端子とＴＣＰ端子の接続位置精
度に対する要求は格段に高まっている。In recent years, the liquid crystal panel has been rapidly increasing in display pixel density, and along with it, the pitch of the connection terminal electrodes with the drive LSI has been narrowed. In particular, as the pixel density has tripled due to the colorization of the display, the terminal electrode pitch has become 1/3, and the demand for the connection position accuracy between the liquid crystal panel terminal and the TCP terminal has been remarkably increased.
【０００６】[0006]
【発明が解決しようとする課題】ところで、液晶パネル
と駆動用ＴＣＰの相互接続位置精度について、前記従来
の方法では液晶パネルをステージ上に配置し高温の加圧
装置にてＴＣＰ端子上を加圧し異方導電性接着シート中
の接着剤を硬化させる工程において原理的な位置ズレが
発生することが判明した。このメカニズムを図を用いて
説明する。Regarding the accuracy of the interconnection position between the liquid crystal panel and the driving TCP, the above-mentioned conventional method places the liquid crystal panel on the stage and presses the TCP terminal with a high temperature pressurizing device. It was found that a theoretical positional shift occurs in the process of curing the adhesive in the anisotropic conductive adhesive sheet. This mechanism will be described with reference to the drawings.
【０００７】図１１（ａ）はＴＣＰ２３を液晶パネル端
子２１に電極の位置整合を行った後異方導電性接着シー
ト２２の粘着力を利用して仮固定した状態である。この
状態においては材料加工上の誤差を無視すればＴＣＰ電
極２６と液晶パネル電極２７の両者の位置は整合してい
る。図１１（ｂ）は液晶パネル２０をステージ上に固定
した後高温の加圧装置２５が上方より下降しＴＣＰ２３
に接した瞬間である。この後加圧装置の熱が液晶パネル
２０に伝導し液晶パネル２０は徐々に昇温する、また加
圧装置は熱伝導により短時間的には温度降下するがヒー
ターより熱が供給されるため降下量は少ない。図１１
（ｃ）は図１１（ｂ）より一定時間経過後の状態を示
し、昇温した液晶パネル２０には熱膨張による寸法変化
が生じている。一方、異方導電性接着シート２２は軟化
しＴＣＰ２３と液晶パネル２０間の摩擦係数が低下して
いるため両者間には滑りが発生し易く、ＴＣＰ２３は液
晶パネル２０の寸法変化に追随せずむしろ加圧装置２５
に密着し追随している。図１１（ｄ）に示すように一定
時間経過後異方導電性接着シート２２の熱硬化が終了
し、液晶パネル２０とＴＣＰ２３は図１１（ｃ）の位置
関係のまま固定され、加圧装置が上昇し液晶パネル２０
が室温にまで冷却されても両者の位置関係は変化しな
い。ＴＣＰ２３と液晶パネル２０の両端子の位置ズレ量
は１個のＴＣＰ２３内では寸法スケールが小さいため顕
著ではないが、ズレ量は熱圧着の寸法スケールに比例す
るため複数個のＴＣＰ２３が接続された液晶パネル２０
の端子１辺全体においては重大な位置ズレとなり接続不
良の原因となる。FIG. 11A shows a state in which the TCP 23 is aligned with the electrodes of the liquid crystal panel terminal 21 and then temporarily fixed by utilizing the adhesive force of the anisotropic conductive adhesive sheet 22. In this state, the positions of both the TCP electrode 26 and the liquid crystal panel electrode 27 are aligned, ignoring errors in material processing. In FIG. 11B, after the liquid crystal panel 20 is fixed on the stage, the high temperature pressurizing device 25 descends from above and TCP 23
It was the moment I came into contact with. After that, the heat of the pressurizing device is conducted to the liquid crystal panel 20 and the temperature of the liquid crystal panel 20 is gradually raised. Further, the pressure of the pressurizing device is lowered in a short time by heat conduction, but is lowered because heat is supplied from the heater. The quantity is small. Figure 11
FIG. 11C shows a state after a certain time has elapsed from FIG. 11B, and the temperature of the liquid crystal panel 20 has changed due to thermal expansion. On the other hand, since the anisotropic conductive adhesive sheet 22 is softened and the friction coefficient between the TCP 23 and the liquid crystal panel 20 is lowered, slippage is likely to occur between the two, and the TCP 23 does not follow the dimensional change of the liquid crystal panel 20, rather. Pressurizing device 25
It closely adheres to and follows. As shown in FIG. 11D, the thermosetting of the anisotropic conductive adhesive sheet 22 is completed after a certain period of time, the liquid crystal panel 20 and the TCP 23 are fixed in the positional relationship of FIG. LCD panel 20 rising
Even if is cooled to room temperature, the positional relationship between the two does not change. The positional deviation amount of both terminals of the TCP 23 and the liquid crystal panel 20 is not significant because the size scale is small within one TCP 23, but the deviation amount is proportional to the thermocompression bonding size scale. Panel 20
This will cause a serious positional deviation on the entire one side of the terminal and cause connection failure.
【０００８】また、この現象は加圧装置が高温保持され
たブロックではなく直接電流を印可できる形状に加工し
た金属ブロックであり、ＴＣＰ２３端子上を加圧した後
パルス状電流を印加しブロックを発熱させる方式の場合
でも発生する。この場合、金属ブロックは熱ひずみを防
止するためにスーパーインバーなどの非常に熱膨張係数
が小さい金属が使用される。よって、金属ブロックが発
熱しある程度時間が経過した場合は図１１（ｃ）と同様
な状態となり位置ズレが発生する。Further, this phenomenon is not a block in which the pressurizing device is kept at a high temperature but a metal block processed into a shape capable of directly applying an electric current. After pressurizing the TCP23 terminal, a pulsed electric current is applied to heat the block. It occurs even in the case of the method. In this case, for the metal block, a metal having a very small coefficient of thermal expansion such as Super Invar is used to prevent thermal strain. Therefore, when the metal block generates heat and a certain amount of time elapses, the state becomes the same as that in FIG. 11C, and the positional deviation occurs.
【０００９】これを解決する方法として、ＴＣＰを１個
ずつ圧着しズレを低減する方法があるが、圧着時間はＴ
ＣＰ１個当たり１５〜２０秒必要であり多数のＴＣＰを
用いる大型の液晶パネルでは工程時間が増大し実用的で
はない。As a method of solving this, there is a method of reducing the deviation by pressure-bonding TCP one by one, but the pressure-bonding time is T
It takes 15 to 20 seconds per CP, which is not practical because a large liquid crystal panel using a large number of TCPs requires a long process time.
【００１０】本発明は、このような従来の半導体素子接
続方法の課題を考慮し、熱圧着時に原理的に生じる位置
ズレを根本的に無くす半導体素子接続方法を提供するこ
とを目的とするものである。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems of the conventional semiconductor element connecting method, and an object thereof is to provide a semiconductor element connecting method which fundamentally eliminates the positional deviation which occurs in principle during thermocompression bonding. is there.
【００１１】[0011]
【課題を解決するための手段】本発明の半導体素子接続
方法は、異方導電性接着シートを介して半導体素子を被
接続基板に仮固定する工程、前記被接続基板を平滑なス
テージ上に配置した後加圧装置により前記半導体素子を
加圧し同時に加熱する熱圧着工程より構成され、前記加
圧装置がパルス状電流により発熱する金属製ブロックか
らなり、かつ前記金属が、前記熱圧着工程における被接
続基板と加圧装置の到達温度差に対応し両者の熱膨張に
よる寸法変化値がほぼ一致するような熱膨張係数を持つ
ものである。 あるいは、上記加圧装置が高温に保持さ
れた加熱ブロックと前記半導体素子に直接接する圧接部
材からなり、前記圧接部材が、前記熱圧着工程における
被接続基板と圧接部材の到達温度差に対応し両者の熱膨
張による寸法変化値がほぼ一致するような熱膨張係数を
持つものである。A method of connecting a semiconductor device according to the present invention comprises a step of temporarily fixing a semiconductor device to a substrate to be connected through an anisotropic conductive adhesive sheet, and the substrate to be connected is arranged on a smooth stage. After that, the semiconductor element is pressed by a pressing device and heated at the same time, and the pressing device is composed of a metal block that generates heat by a pulsed current, and the metal is the target of the thermocompression bonding step. It has a coefficient of thermal expansion that corresponds to the difference in temperature reached by the connection board and the pressurizing device so that the dimensional change values due to thermal expansion of the two substantially match. Alternatively, the pressurizing device is composed of a heating block held at a high temperature and a press-contact member that is in direct contact with the semiconductor element, and the press-contact member corresponds to a difference in temperature reached between the substrate to be connected and the press-contact member in the thermocompression bonding step. It has a coefficient of thermal expansion such that the dimensional change values due to the thermal expansion of are almost the same.
【００１２】[0012]
【作用】本発明では、異方導電性接着シートを介して半
導体素子が仮固定された被接続基板をステージに配置し
た後加圧装置にて半導体素子を加圧する。次に加圧装置
を構成する金属ブロックにパルス状電流を印加し加圧装
置を一定時間加熱する。熱は半導体素子及び異方導電性
接着シートを介して被接続基板に伝導し基板は昇温し一
定温度に到達する。この時加圧装置及び被接続基板には
熱膨張による寸法変化が生じる、また被接続基板は熱が
ステージに伝導するため加圧装置とは温度差が生じ基板
の方が低温になる。加圧装置を構成する金属ブロックの
熱膨張係数をα1到達温度をｔ1、被接続基板の熱膨張係
数をα2到達温度をｔ2とし、圧着作業前の両者の温度を
ｔ0とする。単位長さ当たりの寸法変化は、加圧装置に
ついて、（数１）で、また、被接続基板について、（数
２）で表現される。In the present invention, the semiconductor device is temporarily pressed by the pressure device after the connected substrate on which the semiconductor device is temporarily fixed is placed on the stage via the anisotropic conductive adhesive sheet. Next, a pulsed current is applied to the metal block forming the pressurizing device to heat the pressurizing device for a certain period of time. Heat is conducted to the substrate to be connected through the semiconductor element and the anisotropic conductive adhesive sheet, and the temperature of the substrate rises to reach a certain temperature. At this time, the pressurizing device and the substrate to be connected undergo a dimensional change due to thermal expansion, and since heat is conducted to the substrate to be connected to the stage, a temperature difference occurs between the substrate and the pressurizing device and the substrate becomes lower in temperature. Let the thermal expansion coefficient of the metal block constituting the pressurizing device be α 1 reaching temperature t 1 , the thermal expansion coefficient of the substrate to be connected be α 2 reaching temperature t 2, and the temperature of both before the pressure bonding work be t 0 . . The dimensional change per unit length is expressed by (Equation 1) for the pressure device and (Equation 2) for the connected substrate.
【００１３】[0013]
【数１】 [Equation 1]
【００１４】[0014]
【数２】 [Equation 2]
【００１５】この時、金属ブロックの熱膨張係数をα1
を（数３）で表される値にすれば到達温度における加圧
装置と被接続基板の寸法変化量は一致する。At this time, the coefficient of thermal expansion of the metal block is set to α 1
If is set to a value represented by (Equation 3), the amount of dimensional change between the pressurizing device and the connected substrate at the ultimate temperature is the same.
【００１６】[0016]
【数３】 [Equation 3]
【００１７】よって両者に挟持された半導体素子の被接
続基板に対する相対的な位置変化は生じない。Therefore, the relative position of the semiconductor element sandwiched between the two with respect to the substrate to be connected does not occur.
【００１８】また、加圧装置が高温に保持された加熱ブ
ロックと前記半導体素子に直接接する圧接部材からなる
場合は次のような工程になる。If the pressurizing device comprises a heating block kept at a high temperature and a press-contacting member that is in direct contact with the semiconductor element, the following steps are performed.
【００１９】異方導電性接着シートを介して半導体素子
が仮固定された被接続基板をステージに配置した後加圧
装置の圧接部材が半導体素子を加圧する。次に高温に保
持された加熱ブロックを圧接部材に近接あるいは密接さ
せ圧接部材を一定時間加熱する。熱は半導体素子及び異
方導電性接着シートを介して被接続基板に伝導し基板は
昇温し一定温度に到達する。この時加圧装置の圧接部材
及び被接続基板には熱膨張による寸法変化が生じる。ま
た被接続基板は熱がステージに伝導するため圧接部材と
は温度差が生じ基板の方が低温になる。この時圧接部材
の熱膨張係数をα1到達温度をｔ1、被接続基板の熱膨張
係数をα2到達温度をｔ2とし、圧着作業前の両者の温度
をｔ0とすると前記説明と同様なメカニズムにより、圧
接部材の熱膨張係数α1を（数３）で表される値にする
ことで到達温度における圧接部材と被接続基板の寸法変
化は一致する。よって両者に挟持された半導体素子の被
接続基板に対する相対的な位置変化は生じない。After the connection substrate to which the semiconductor element is temporarily fixed via the anisotropic conductive adhesive sheet is arranged on the stage, the pressure contact member of the pressure device presses the semiconductor element. Next, the heating block kept at a high temperature is brought close to or in close contact with the pressure contact member to heat the pressure contact member for a certain period of time. Heat is conducted to the substrate to be connected through the semiconductor element and the anisotropic conductive adhesive sheet, and the temperature of the substrate rises to reach a certain temperature. At this time, a dimensional change occurs due to thermal expansion in the pressure contact member of the pressure device and the substrate to be connected. Further, since heat is conducted to the stage of the substrate to be connected to the stage, a temperature difference occurs between the substrate and the pressure contact member, and the temperature of the substrate becomes lower. At this time, assuming that the thermal expansion coefficient of the pressure contact member is α 1 attainment temperature t 1 , the thermal expansion coefficient of the substrate to be connected is α 2 attainment temperature t 2, and the temperature of both before the pressure bonding work is t 0 , the same as the above description. By setting the thermal expansion coefficient α 1 of the pressure contact member to a value represented by (Equation 3) by such a mechanism, the dimensional change between the pressure contact member and the substrate to be connected at the ultimate temperature is the same. Therefore, the relative position of the semiconductor element sandwiched between them with respect to the substrate to be connected does not change.
【００２０】[0020]
【実施例】以下、本発明の実施例について図面を参照し
て説明する。Embodiments of the present invention will be described below with reference to the drawings.
【００２１】図１は本発明の一実施例における半導体素
子接続方法に用いられる装置の側面図である。半導体素
子を被接続基板に圧着する加圧装置２は図２に示す形状
にモリブデン製のブロック５を加工したものであり矢印
の向きに電流を流すことにより圧接面７が発熱する。図
１に示すように加圧装置２全体はエアシリンダ４により
上下に移動し、ステージ１上に置かれた被接続基板の端
子部を加圧することができる。FIG. 1 is a side view of an apparatus used in a semiconductor element connecting method according to an embodiment of the present invention. The pressurizing device 2 for press-bonding the semiconductor element to the substrate to be connected is one in which a block 5 made of molybdenum is processed into the shape shown in FIG. 2, and the press-contact surface 7 generates heat by passing an electric current in the direction of the arrow. As shown in FIG. 1, the entire pressurizing device 2 can be moved up and down by the air cylinder 4 to pressurize the terminal portion of the substrate to be connected placed on the stage 1.
【００２２】本実施例では被接続基板は液晶パネルを構
成するガラス基板であり、接続される半導体素子はテー
プキャリアパッケージ（ＴＣＰ）実装されたＬＳＩであ
る。In the present embodiment, the substrate to be connected is a glass substrate forming a liquid crystal panel, and the semiconductor element to be connected is an LSI mounted with a tape carrier package (TCP).
【００２３】まず図３に示すように、ＴＣＰ１０と液晶
パネル８の端子９上の電極パターンを位置整合した状態
で異方導電性接着シート１１の粘着性を利用して仮接着
した。First, as shown in FIG. 3, the TCP 10 and the electrode pattern on the terminal 9 of the liquid crystal panel 8 were temporarily aligned with each other using the adhesive property of the anisotropic conductive adhesive sheet 11 in a state of being aligned.
【００２４】次に図４に示すように液晶パネル８の端子
９が接続装置の加圧装置２の直下に来るように配置し、
加圧装置２を降下させ液晶パネル端子９上のＴＣＰ１０
を約１．９６ＭＰａの圧力で加圧した。次に加圧装置２
に電流を２０秒間印加し昇温させ液晶パネル８の端子９
を加熱した。本実施例では加圧装置２は電流印加前は２
５℃であり電流印加３秒後に２５０℃に達し、２０秒後
までほぼその温度を維持した。この時液晶パネル端子１
１の温度は２５℃から１６０℃まで上昇した。次に、加
圧装置２への印加電流を停止しエアシリンダ４を動作さ
せ加圧装置２が上昇後液晶パネル８をステージ１より取
り出し圧着部を顕微鏡観察したところ液晶パネル端子部
９の電極パターンとＴＣＰ１０の電極パターンの位置ズ
レは見られなく、電気検査により接続が確認できた。Next, as shown in FIG. 4, the liquid crystal panel 8 is arranged so that the terminal 9 is directly below the pressure device 2 of the connecting device.
The TCP 10 on the liquid crystal panel terminal 9 is lowered by lowering the pressure device 2.
Was pressurized at a pressure of about 1.96 MPa. Next, pressurizing device 2
Is applied to the terminal 9 of the liquid crystal panel 8 for 20 seconds to raise the temperature.
Was heated. In this embodiment, the pressure device 2 is set to 2 before applying the current.
The temperature was 5 ° C., reached 250 ° C. 3 seconds after the current was applied, and was maintained at that temperature for almost 20 seconds. At this time, the liquid crystal panel terminal 1
The temperature of 1 rose from 25 ° C to 160 ° C. Next, when the current applied to the pressure device 2 is stopped and the air cylinder 4 is operated to raise the pressure device 2, the liquid crystal panel 8 is taken out of the stage 1 and the pressure-bonded portion is observed under a microscope. No positional deviation of the electrode pattern of TCP 10 was observed, and the connection was confirmed by electrical inspection.
【００２５】本実施例において、被接続基板はガラス基
板であり、熱膨張係数は、約８×１０-6／Ｋである。圧
着前の温度は加圧装置およびガラス基板共２５℃であ
り、圧着時の到達温度は加圧装置は２５０℃、ガラス基
板は１６０℃である。よって（数３）により加圧装置２
に求められる熱膨張係数は、４．８×１０-6／Ｋとな
る。In this embodiment, the substrate to be connected is a glass substrate and the coefficient of thermal expansion is about 8 × 10 -6 / K. The temperature before pressure bonding is 25 ° C. for both the pressure device and the glass substrate, and the temperature reached during pressure bonding is 250 ° C. for the pressure device and 160 ° C. for the glass substrate. Therefore, according to (Equation 3), the pressure device 2
The coefficient of thermal expansion required for is 4.8 × 10 −6 / K.
【００２６】本実施例で加圧装置に使用したモリブデン
は熱膨張係数が、約４．８×１０-6／Ｋであり、かつ耐
熱性や機械的強度も優れており本用途に適したものであ
る。ただし加圧装置に使用できる材料はモリブデンに限
るものではなく、他にニッケル−鉄合金やタングステン
など熱膨張係数が前記計算値にほぼ一致しかつ耐熱性お
よび機械的強度が本用途に耐えられるものならば使用可
能である。なお当然ながら前記計算に用いる各パラメー
タは基板、接続装置、接続温度条件が異なると値が変化
するためα1の計算値も異なった値となる。Molybdenum used in the pressurizing device in this example has a coefficient of thermal expansion of about 4.8 × 10 −6 / K, and is excellent in heat resistance and mechanical strength, and is suitable for this application. Is. However, the material that can be used for the pressurizer is not limited to molybdenum, but other materials such as nickel-iron alloy and tungsten whose coefficient of thermal expansion almost matches the above calculated value and whose heat resistance and mechanical strength can withstand this application. Then it can be used. Of course, each parameter used in the above calculation varies depending on the substrate, the connection device, and the connection temperature conditions, and therefore the calculated value of α 1 also has a different value.
【００２７】次に、本発明の他の実施例を説明する。Next, another embodiment of the present invention will be described.
【００２８】図５は本実施例における半導体素子接続方
法に用いられる装置の側面図である。半導体素子を被接
続基板に圧着する加圧装置は図６に示すようにモリブデ
ン製のブロックを加工した圧接部材１５と上下可動式の
加熱ブロック１６より構成される。加熱ブロック１６は
真鍮製のブロックに円筒状ヒーター１７を埋め込んだ構
造であり、温度センサ１９にて温度を検出しヒーター電
流を制御することにより加熱ブロックを一定の温度に保
つことができ、エアシリンダ１８の動作により加熱ブロ
ック１６を圧接部材１５に近接または密着させることに
より圧接部材を加熱し昇温させることができる。このよ
うに加熱ブロックと圧接部材を分離した構造は、実施例
１における図２に示す加圧装置のような複雑かつ高精度
な加工を要する部材が不要、パルス状大電流を供給する
電源が不要、温度の均一性が高いといった利点がある。
図５に示すように加圧装置全体はエアシリンダ４により
上下に移動し、ステージ１上に置かれた被接続基板の端
子部を加圧することができる。FIG. 5 is a side view of an apparatus used in the semiconductor element connecting method in this embodiment. As shown in FIG. 6, the pressurizing device for press-bonding the semiconductor element to the substrate to be connected is composed of a press-contact member 15 obtained by processing a block made of molybdenum and a vertically movable heating block 16. The heating block 16 has a structure in which a cylindrical heater 17 is embedded in a brass block. By detecting the temperature with a temperature sensor 19 and controlling the heater current, the heating block can be kept at a constant temperature. By the operation of 18, the heating block 16 is brought close to or in close contact with the press contact member 15, so that the press contact member can be heated to raise the temperature. The structure in which the heating block and the pressure contact member are separated in this way does not require a member that requires complicated and highly accurate processing such as the pressurizing device shown in FIG. 2 in the first embodiment, and does not require a power source for supplying a pulsed large current. There is an advantage that the temperature uniformity is high.
As shown in FIG. 5, the entire pressurizing device can be moved up and down by the air cylinder 4 to pressurize the terminal portion of the substrate to be connected placed on the stage 1.
【００２９】本実施例では被接続基板は液晶パネルを構
成するガラス基板であり、接続される半導体素子はテー
プキャリアパッケージ（ＴＣＰ）実装されたＬＳＩであ
る。In this embodiment, the substrate to be connected is a glass substrate forming a liquid crystal panel, and the semiconductor element to be connected is an LSI mounted with a tape carrier package (TCP).
【００３０】まず図７に示すように、ＴＣＰ１０と液晶
パネル８の端子１１上の電極パターンを位置整合した状
態で異方導電性接着シート１２の粘着性を利用して仮接
着した。First, as shown in FIG. 7, the TCP 10 and the electrode pattern on the terminal 11 of the liquid crystal panel 8 were temporarily aligned with each other using the adhesive property of the anisotropic conductive adhesive sheet 12 in a state of being aligned.
【００３１】次に図８に示すように液晶パネル８の端子
９が加圧装置の圧接部材１５の直下に来るように配置
し、エアシリンダ１４の動作により圧接部材を降下させ
液晶パネル端子１１上のＴＣＰ１０を約１．９６ＭＰａ
の圧力で加圧した。次にエアシリンダ１８の動作により
２６５℃に保持した加熱ブロック１６を下降させ圧接部
材１５に密着し、圧接部材を介して液晶パネル８の端子
１１を加熱する。本実施例では圧接部材１５は加熱ブロ
ック密着前は２５℃であり密着５秒後に２５０℃に達
し、２０秒後までほぼその温度を維持した。この時液晶
パネル端子９の温度は２５℃から１６０℃まで上昇し
た。図８は加熱ブロック１６が圧接部材１５に密着して
いる状態を示す。次に加熱ブロック１６を圧接部材１５
より分離した後エアシリンダ１４の動作により加圧装置
を上昇させ、その後液晶パネル８をステージ１より取り
出し圧着部を顕微鏡観察したところ液晶パネル端子部の
電極パターンとＴＣＰの電極パターンの位置ズレは見ら
れなく、電気検査により接続が確認できた。Next, as shown in FIG. 8, the terminals 9 of the liquid crystal panel 8 are arranged so as to be located directly below the pressure contact member 15 of the pressure device, and the operation of the air cylinder 14 causes the pressure contact member to descend, so that the liquid crystal panel terminal 11 is placed above. TCP10 of about 1.96 MPa
It was pressurized with the pressure of. Next, the heating block 16 kept at 265 ° C. is lowered by the operation of the air cylinder 18 to be brought into close contact with the pressure contact member 15, and the terminal 11 of the liquid crystal panel 8 is heated via the pressure contact member. In this embodiment, the pressure contact member 15 was at 25 ° C. before contact with the heating block, reached 250 ° C. after 5 seconds of contact, and maintained that temperature for about 20 seconds. At this time, the temperature of the liquid crystal panel terminal 9 rose from 25 ° C to 160 ° C. FIG. 8 shows a state where the heating block 16 is in close contact with the press contact member 15. Next, the heating block 16 is attached to the pressing member 15 by pressing.
After further separating, the pressure device is raised by the operation of the air cylinder 14, and then the liquid crystal panel 8 is taken out from the stage 1 and the pressure-bonded portion is observed with a microscope. As a result, the positional deviation between the electrode pattern of the liquid crystal panel terminal portion and the TCP electrode pattern is observed. The electrical inspection confirmed the connection.
【００３２】本実施例において、被接続基板はガラス基
板であり、熱膨張係数は、約８×１０-6／Ｋである。圧
着前の温度は圧接部材およびガラス基板共２５℃であ
り、圧着時の到達温度は加圧装置は２５０℃、ガラス基
板は１６０℃である。よって（数３）により加圧装置に
求められる熱膨張係数は、４．８×１０-6／Ｋとなる。In this embodiment, the substrate to be connected is a glass substrate and the coefficient of thermal expansion is about 8 × 10 -6 / K. The temperature before pressure bonding is 25 ° C. for both the pressure contact member and the glass substrate, and the temperature reached during pressure bonding is 250 ° C. for the pressure device and 160 ° C. for the glass substrate. Therefore, the thermal expansion coefficient required for the pressurizing device according to (Equation 3) is 4.8 × 10 −6 / K.
【００３３】本実施例で圧接部材に使用したモリブデン
は熱膨張係数が、約４．８×１０-6／Ｋであり、かつ耐
熱性や機械的強度も優れており本用途に適したものであ
る。ただし加圧装置に使用できる材料はモリブデンに限
るものではなく、他にニッケル−鉄合金やタングステン
など熱膨張係数が前記計算値にほぼ一致しかつ耐熱性お
よび機械的強度が本用途に耐えられるものならば使用可
能である。The molybdenum used for the pressure contact member in this example has a coefficient of thermal expansion of about 4.8 × 10 -6 / K, and also has excellent heat resistance and mechanical strength, and is suitable for this application. is there. However, the material that can be used for the pressurizer is not limited to molybdenum, but other materials such as nickel-iron alloy and tungsten whose coefficient of thermal expansion almost matches the above calculated value and whose heat resistance and mechanical strength can withstand this application. Then it can be used.
【００３４】[0034]
【発明の効果】以上述べたところから明らかなように、
本発明の半導体素子接続方法は、異方導電性接着シート
を用いた熱圧着工法でありながら、熱圧着時に原理的に
生じる位置ズレを根本的に無くしたものであり、高精度
の接続が要求される高表示画素密度のカラー液晶パネル
等の製造を可能にするものである。As is apparent from the above description,
The semiconductor element connection method of the present invention is a thermocompression bonding method using an anisotropic conductive adhesive sheet, but fundamentally eliminates the positional deviation that occurs in principle during thermocompression bonding, and requires highly accurate connection. It is possible to manufacture a color liquid crystal panel having a high display pixel density.
【００３５】また、本発明は液晶パネルだけでなく異方
導電性接着シートを用いた接続工法において広く適用で
き、非常に高い位置精度が容易に得られるという工業的
価値の大なるものである。Further, the present invention can be widely applied not only to liquid crystal panels but also to a connection construction method using an anisotropic conductive adhesive sheet, and it is of great industrial value that a very high positional accuracy can be easily obtained.
【図１】本発明の一実施例における半導体素子接続装置
の側面図FIG. 1 is a side view of a semiconductor element connecting device according to an embodiment of the present invention.
【図２】同上半導体素子接続装置の加圧装置斜視図FIG. 2 is a perspective view of a pressure device of the same semiconductor element connecting device as above.
【図３】同上半導体素子接続工程の一工程斜視図FIG. 3 is a perspective view of one step of the semiconductor element connecting step of the same.
【図４】同上半導体素子接続工程の一工程側面図FIG. 4 is a side view of one step of the semiconductor element connecting step of the same.
【図５】本発明の他の実施例における半導体素子接続装
置の側面図FIG. 5 is a side view of a semiconductor element connecting device according to another embodiment of the present invention.
【図６】同上半導体素子接続装置の加圧装置側面図FIG. 6 is a side view of a pressure device of the semiconductor element connecting device of the same as above.
【図７】同上半導体素子接続工程の一工程斜視図FIG. 7 is a perspective view showing a step of connecting the semiconductor elements in the same as above.
【図８】同上半導体素子接続工程の一工程側面図FIG. 8 is a side view of one step of the semiconductor element connecting step of the same.
【図９】従来例における液晶パネルの斜視図FIG. 9 is a perspective view of a liquid crystal panel in a conventional example.
【図１０】同上熱圧着工程の一工程側面図FIG. 10 is a side view of one process of the thermocompression bonding process.
【図１１】（ａ）は、同上液晶パネルの断面図、（ｂ）
は、同上液晶パネルの断面図、（ｃ）は、同上液晶パネ
ルの断面図、（ｄ）は、同上液晶パネルの断面図11 (a) is a sectional view of the liquid crystal panel of the same as above, FIG.
Is a sectional view of the same liquid crystal panel, (c) is a sectional view of the same liquid crystal panel, and (d) is a sectional view of the same liquid crystal panel.
【符号の説明】 １ステージ ２加圧装置 ３基礎
フレーム ４エアシリンダー ５金属ブロック ６温度
センサー ７圧接面 ８液晶パネル ９液晶
パネル端子 １０テープキャリアパッケージ（ＴＣＰ） １１異
方導電性接着シート １２半導体チップ １３ステージ １４エ
アシリンダ １５圧接部材 １６加熱ブロック １７円
筒状ヒーター １８エアシリンダ １９温度センサー ２０液
晶パネル ２１端子 ２２異方導電性接着シート ２３テープキャリアパッケージ（ＴＣＰ） ２４半
導体チップ ２５加圧装置 ２６ＴＣＰ電極 ２７液
晶パネル電極[Explanation of symbols] 1 stage 2 pressurizing device 3 basic frame 4 air cylinder 5 metal block 6 temperature sensor 7 pressure contact surface 8 liquid crystal panel 9 liquid crystal panel terminal 10 tape carrier package (TCP) 11 anisotropic conductive adhesive sheet 12 semiconductor chip 13 Stage 14 Air Cylinder 15 Pressing Member 16 Heating Block 17 Cylindrical Heater 18 Air Cylinder 19 Temperature Sensor 20 Liquid Crystal Panel 21 Terminal 22 Anisotropic Conductive Adhesive Sheet 23 Tape Carrier Package (TCP) 24 Semiconductor Chip 25 Pressurizing Device 26 TCP Electrode 27 Liquid crystal panel electrode
Claims (2)
を被接続基板に仮固定する工程と、前記被接続基板をス
テージ上に配置した後加圧装置により前記半導体素子を
加圧し同時に加熱する熱圧着工程とを備え、前記加圧装
置がパルス状電流により発熱する金属製ブロックであ
り、前記金属が、前記熱圧着工程における前記被接続基
板と加圧装置の到達温度差に対応し両者の熱膨張による
寸法変化値が実質上一致するような熱膨張係数を持つこ
とを特徴とする半導体素子接続方法。1. A step of temporarily fixing a semiconductor element to a substrate to be connected through an anisotropic conductive adhesive sheet, and placing the substrate to be connected on a stage and then pressurizing the semiconductor element by a pressurizing device to simultaneously heat the semiconductor element. And a thermocompression bonding step, wherein the pressurizing device is a metal block that generates heat with a pulsed current, and the metal corresponds to a difference in temperature reached between the connected substrate and the pressurizing device in the thermocompression bonding process. A semiconductor element connecting method, which has a coefficient of thermal expansion such that the dimensional change values due to the thermal expansion of are substantially the same.
を被接続基板に仮固定する工程と、前記被接続基板をス
テージ上に配置した後加圧装置により前記半導体素子を
加圧し同時に加熱する熱圧着工程とを備え、前記加圧装
置が高温に保持された加熱ブロックと前記半導体素子に
直接接する圧接部材を有し、前記圧接部材が、前記熱圧
着工程における前記被接続基板と圧接部材の到達温度差
に対応し両者の熱膨張による寸法変化値が実質上一致す
るような熱膨張係数を持つことを特徴とする半導体素子
接続方法。2. A step of temporarily fixing a semiconductor element to a connection substrate through an anisotropic conductive adhesive sheet, and a step of placing the connection substrate on a stage and then pressing the semiconductor element by a pressure device to simultaneously heat the semiconductor element. A thermocompression bonding step, wherein the pressing device has a heating block held at a high temperature and a pressure contact member that is in direct contact with the semiconductor element, and the pressure contact member has the connection substrate and the pressure contact member in the thermocompression bonding step. A semiconductor element connecting method characterized by having a coefficient of thermal expansion such that the dimensional change values due to the thermal expansion of both of them substantially correspond to each other in the reached temperature difference.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29309393A JP3361583B2 (en) | 1993-11-24 | 1993-11-24 | Semiconductor element connection method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29309393A JP3361583B2 (en) | 1993-11-24 | 1993-11-24 | Semiconductor element connection method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07147301A true JPH07147301A (en) | 1995-06-06 |
| JP3361583B2 JP3361583B2 (en) | 2003-01-07 |
Family
ID=17790343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29309393A Expired - Fee Related JP3361583B2 (en) | 1993-11-24 | 1993-11-24 | Semiconductor element connection method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3361583B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006120815A (en) * | 2004-10-21 | 2006-05-11 | Hitachi Chem Co Ltd | Packaging method |
| CN100407881C (en) * | 2004-10-13 | 2008-07-30 | 友达光电股份有限公司 | Pressed-on appts |
| JP2016058581A (en) * | 2014-09-10 | 2016-04-21 | 日立化成株式会社 | Semiconductor device manufacturing method |
-
1993
- 1993-11-24 JP JP29309393A patent/JP3361583B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100407881C (en) * | 2004-10-13 | 2008-07-30 | 友达光电股份有限公司 | Pressed-on appts |
| JP2006120815A (en) * | 2004-10-21 | 2006-05-11 | Hitachi Chem Co Ltd | Packaging method |
| JP2016058581A (en) * | 2014-09-10 | 2016-04-21 | 日立化成株式会社 | Semiconductor device manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3361583B2 (en) | 2003-01-07 |
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