JPH06283417A - Film-coating device - Google Patents
Film-coating deviceInfo
- Publication number
- JPH06283417A JPH06283417A JP6823893A JP6823893A JPH06283417A JP H06283417 A JPH06283417 A JP H06283417A JP 6823893 A JP6823893 A JP 6823893A JP 6823893 A JP6823893 A JP 6823893A JP H06283417 A JPH06283417 A JP H06283417A
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- JP
- Japan
- Prior art keywords
- substrate
- precursor solution
- precursor
- film
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、半導体基板上に強誘電
体薄膜などの機能性薄膜を成膜する塗膜装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a coating apparatus for forming a functional thin film such as a ferroelectric thin film on a semiconductor substrate.
【0002】[0002]
【従来の技術】機能性薄膜を成膜する方法としてスピン
コート法が知られている。この方法は、目的とする機能
性薄膜の前駆体である金属化合物等を溶媒に溶かした前
駆体溶液を、半導体基板(以下、単に「基板」と称す
る)の中心を通る軸を回転軸として回転されている基板
上に滴下することにより、基板上に均一な膜厚の前駆体
薄膜を得た後、この前駆体膜を加熱し、溶媒や前駆体で
ある金属化合物の有機官能基を揮発させ、更に、結晶化
して、目的とする機能性薄膜を形成する方法である。2. Description of the Related Art A spin coating method is known as a method for forming a functional thin film. In this method, a precursor solution obtained by dissolving a metal compound, which is a precursor of a target functional thin film, in a solvent is rotated with an axis passing through the center of a semiconductor substrate (hereinafter simply referred to as “substrate”) as a rotation axis. After obtaining a precursor thin film having a uniform film thickness on the substrate by dropping it onto the substrate, the precursor film is heated to volatilize the organic functional groups of the solvent or the metal compound that is the precursor. Further, it is a method of crystallizing to form a target functional thin film.
【0003】基板上に塗布された前駆体溶液は、基板の
回転による遠心力によって基板の外周部へと向かう。基
板上には薄い前駆体膜のみが残る。従って、目的とする
膜厚分だけの前駆体薄膜が基板上に形成され、余剰な前
駆体溶液は基板外へと振り払われる。The precursor solution applied on the substrate moves toward the outer peripheral portion of the substrate due to the centrifugal force generated by the rotation of the substrate. Only a thin precursor film remains on the substrate. Therefore, the precursor thin film having a desired film thickness is formed on the substrate, and the excess precursor solution is shaken off to the outside of the substrate.
【0004】一回のスピンコートによって得られる膜厚
は、基板の回転数や、前駆体溶液の粘膜等に依存してい
る。従って、均一でかつ目的とする膜厚を得るために
は、前駆体溶液の種類と、基板の回転数とを適切に選択
しなければならない。The film thickness obtained by a single spin coating depends on the number of rotations of the substrate, the mucous membrane of the precursor solution, and the like. Therefore, in order to obtain a uniform and desired film thickness, it is necessary to properly select the type of precursor solution and the rotation speed of the substrate.
【0005】スピンコート法に用いられる種類の前駆体
溶液は、回転により基板上に均一に広がって塗布される
ような粘性と、基板に対する濡れ性とを有していること
が必要である。The precursor solution of the type used in the spin coating method must have such a viscosity that it is uniformly spread on the substrate by rotation and is wettable to the substrate.
【0006】もし、粘性が高すぎたり、基板に対する濡
れ性が悪かったりすると、この前駆体溶液は基板上にき
れいに広がらず、ムラのある膜となる。反対に粘性が低
すぎると、一回の塗膜での膜厚が薄すぎて多数回の塗布
を行わなければならなくなる等の問題も生じてくる。If the viscosity is too high or the substrate has poor wettability, the precursor solution does not spread cleanly on the substrate, resulting in an uneven film. On the other hand, if the viscosity is too low, the film thickness of one coating film becomes too thin, and the coating must be applied many times.
【0007】[0007]
【発明が解決しようとする課題】しかしながら、このス
ピンコート法では、回転による遠心力だけでは、余剰の
前駆体溶液を完全に振り切ることは出来ず、基板の外周
部にたまってしまう。この余剰の前駆体液によって、図
1の(A)に示すように、前駆体薄膜2が基板4の外周
部で厚くなったり、または、図1(B)に示すように基
板4の裏面に回り込むなどの問題が生じる。However, in this spin coating method, the excess precursor solution cannot be completely shaken off by the centrifugal force due to the rotation, and it accumulates on the outer peripheral portion of the substrate. Due to this excess precursor liquid, the precursor thin film 2 becomes thicker on the outer peripheral portion of the substrate 4 as shown in FIG. 1 (A), or wraps around to the back surface of the substrate 4 as shown in FIG. 1 (B). Such problems occur.
【0008】この結果として、スピンコート法により成
膜された機能性薄膜を用いた半導体素子は、基板の外周
部近傍では、始めから使いものにならず、または膜厚の
違いから、目的とする特性が得られないなどの問題を有
している。As a result, the semiconductor element using the functional thin film formed by the spin coating method cannot be used from the beginning in the vicinity of the outer peripheral portion of the substrate, or the desired characteristics due to the difference in film thickness. There is a problem such as not being able to obtain.
【0009】さらに、それ以外の問題も生じる。例え
ば、通常のフォトエッチングプロセスを用いる場合、マ
スクと前駆体薄膜との距離が不均一になり、配線などの
パターンを露光するときに、その解像度に悪影響を及ぼ
すなどの問題である。Further, other problems also occur. For example, when a normal photo-etching process is used, the distance between the mask and the precursor thin film becomes non-uniform, and the resolution of the pattern such as wiring is adversely affected when exposed.
【0010】また、基板の裏面に付着した場合は、裏面
の平滑性も失われ、通常の半導体プロセスでよく用いら
れるいわゆる真空圧着による基板の固定の不良の原因と
なったり、基板のステージに対する水平が取れない等の
問題も生じてくる。本発明は、このような問題点を解決
し、半導体基板上に形成する薄膜を、一様に均一な膜厚
に成膜することのできる塗膜装置を提供することを目的
とする。Further, when it adheres to the back surface of the substrate, the smoothness of the back surface is also lost, which may cause defective fixing of the substrate due to so-called vacuum pressure bonding which is often used in a normal semiconductor process, and the substrate may be horizontally attached to the stage. Problems such as not being able to take off will also occur. It is an object of the present invention to solve the above problems and provide a coating film apparatus capable of forming a thin film formed on a semiconductor substrate with a uniform film thickness.
【0011】[0011]
【課題を解決する手段および作用】上記の問題点を解決
し、目的を達成するために本発明は、半導体基板を回転
させる回転手段と、この回転手段により前記半導体基板
を回転させている間に、この半導体基板上に機能性薄膜
の前駆体溶液を滴下して前駆体薄膜を成膜する成膜手段
とを備えた塗膜装置において、前記半導体基板上に存在
する余剰の前駆体溶液を除去する除去手段を設けたもの
である。これにより、半導体基板上に存在する余剰な前
駆体溶液が除去され、半導体基板上に、一様に均一な膜
厚の薄膜が成膜される。In order to solve the above problems and to achieve the object, the present invention provides a rotating means for rotating a semiconductor substrate and a rotating means for rotating the semiconductor substrate by the rotating means. In a coating film apparatus having a film forming means for forming a precursor thin film by dropping a precursor solution of a functional thin film on the semiconductor substrate, the excess precursor solution existing on the semiconductor substrate is removed. The removal means is provided. As a result, the excess precursor solution existing on the semiconductor substrate is removed, and a thin film having a uniform film thickness is formed on the semiconductor substrate.
【0012】[0012]
【実施例】以下に、図2を参照して本発明による塗膜装
置の第1実施例を説明する。EXAMPLE A first example of the coating apparatus according to the present invention will be described below with reference to FIG.
【0013】図2に示すように、塗膜装置(以下、「ス
ピンコート装置」と称する)の回転部6に固定された基
板4の外周部近傍に窒素ガスを噴出するノズル8を設け
る。このノズル8は、通常時に薄膜形成する対象となる
基板4と異なったサイズの基板も取り扱えるように、基
板4の径方向に沿って移動可能となっている。As shown in FIG. 2, a nozzle 8 for ejecting nitrogen gas is provided in the vicinity of the outer peripheral portion of the substrate 4 fixed to a rotating portion 6 of a coating device (hereinafter referred to as "spin coater"). The nozzle 8 is movable along the radial direction of the substrate 4 so that a substrate having a size different from the substrate 4 on which a thin film is normally formed can be handled.
【0014】このノズル8より窒素ガスを、基板4の回
転中心10から遠ざかる方向に噴出させる共に、基板4
の回転面と平行な面よりもやや下方に向けて噴出させ
る。このノズル8より噴出したガスは、回転する基板4
の外周部に当たり余剰な前駆体溶液を基板4外に吹き飛
ばす。これによって、余剰な前駆体液が基板4の外周部
に溜る事を防ぎ、結果として、膜厚が基板4の外周部で
厚くなることを防ぐ。Nitrogen gas is ejected from the nozzle 8 in a direction away from the rotation center 10 of the substrate 4, and the substrate 4
It is jetted slightly downward from the plane parallel to the plane of rotation of. The gas ejected from the nozzle 8 is used for the rotating substrate 4
Excessive precursor solution is blown out of the substrate 4 by hitting the outer peripheral portion of the substrate. This prevents excess precursor liquid from accumulating on the outer peripheral portion of the substrate 4, and consequently prevents the film thickness from increasing on the outer peripheral portion of the substrate 4.
【0015】この時、基板4の回転面に対するガスの噴
出角度が深すぎると、基板の回転を乱す事になり、ま
た、角度が浅すぎると、効率的に余剰な前駆体溶液を吹
き飛ばすことが困難になる。従って、適当な角度でガス
を噴出させ、余剰の前駆体溶液を吹き飛ばすように、ガ
スの入射角度と、ガスの噴出量とを調整しなければなら
ない。ガスの入射角度及び噴出量は、前駆体溶液の粘性
や基板4の回転数等に依存するので、これら粘性や回転
数等に従って決定する。また、裏面に回り込む余剰の前
駆体溶液を防ぐために、基板4の裏面側に、さらに別の
ノズルを設けてもよい。次に第2実施例を図3を用いて
説明する。At this time, if the gas ejection angle with respect to the rotating surface of the substrate 4 is too deep, the rotation of the substrate is disturbed, and if the angle is too shallow, excess precursor solution can be efficiently blown off. It will be difficult. Therefore, the incident angle of the gas and the amount of ejected gas must be adjusted so that the gas is ejected at an appropriate angle and the surplus precursor solution is blown off. The gas incident angle and the gas ejection amount depend on the viscosity of the precursor solution, the rotation speed of the substrate 4, and the like, and thus are determined according to the viscosity and the rotation speed. Further, another nozzle may be provided on the back surface side of the substrate 4 in order to prevent an excessive precursor solution from flowing around to the back surface. Next, a second embodiment will be described with reference to FIG.
【0016】図3に示すようにスピンコート装置の基板
回転部6に載置された基板4の外周部近傍に、前駆体溶
液の溶媒を滴下するノズル12を設ける。このノズル1
2は、異なったサイズの基板4を取り扱えるように、基
板4の径方向に移動可能に設置されている。As shown in FIG. 3, a nozzle 12 for dropping the solvent of the precursor solution is provided near the outer periphery of the substrate 4 placed on the substrate rotating unit 6 of the spin coater. This nozzle 1
2 is installed movably in the radial direction of the substrate 4 so that substrates 4 of different sizes can be handled.
【0017】このノズル12より、前駆体溶液の溶媒を
基板4に滴下する。例えば、金属メトキシエトキシドの
様な前駆体をメトキシエタノール等の溶媒に溶かした系
では、このメトキシエタノールをノズル12より滴下す
る。これによって、基板4上に塗布された前駆体薄膜
は、基板4の外周部近傍で局所的にその濃度が低下され
る。これにより、溶媒乾燥後は外周部に余剰な前駆体が
溜る事がなく、結果として、最終的な機能性薄膜の外周
部が厚くなるのを防ぐ事ができる。この実施例での溶媒
の滴下量は、前駆体溶液の種類や濃度、また、基板4の
回転数などによって調節される。次に第3実施例を図4
を用いて説明する。From the nozzle 12, the solvent of the precursor solution is dropped on the substrate 4. For example, in a system in which a precursor such as metal methoxyethoxide is dissolved in a solvent such as methoxyethanol, this methoxyethanol is dropped from the nozzle 12. As a result, the concentration of the precursor thin film applied on the substrate 4 is locally reduced near the outer peripheral portion of the substrate 4. As a result, after the solvent is dried, excess precursor does not accumulate on the outer peripheral portion, and as a result, it is possible to prevent the outer peripheral portion of the final functional thin film from becoming thick. The amount of the solvent dropped in this example is adjusted depending on the type and concentration of the precursor solution, the rotation speed of the substrate 4, and the like. Next, a third embodiment is shown in FIG.
Will be explained.
【0018】図4に示すように回転中の基板4の外周部
に接するようにへら14を設ける。このへら14は異な
ったサイズの基板4も取り扱えるように、基板4の径方
向に移動可能に設置されている。このへら14により、
回転中に基板4の外周部に集まる余剰の前駆体溶液を取
り除く。かくして、余剰な前駆体溶液が基板4の外周部
に溜ることがなく、結果として膜厚が基板4の外周部で
厚くなることを防ぐ。As shown in FIG. 4, a spatula 14 is provided so as to contact the outer peripheral portion of the rotating substrate 4. The spatula 14 is installed movably in the radial direction of the substrate 4 so that substrates 4 of different sizes can be handled. With this spatula 14,
Excessive precursor solution collected on the outer peripheral portion of the substrate 4 during the rotation is removed. Thus, the excess precursor solution does not accumulate on the outer peripheral portion of the substrate 4, and as a result, the film thickness is prevented from becoming thicker on the outer peripheral portion of the substrate 4.
【0019】このへら14は基板4を傷つけることのな
いよう、また、へら14の材質が溶け出すなどして機能
性薄膜の特性に悪影響を与えることがないよう、シリコ
ンゴムなどの柔らかく、耐薬品性の良い部材で構成され
る。へら14は基板4を損傷することがないよう、ま
た、必要以上に前駆体溶液を取り除くことがないよう、
基板4への接触圧力や、接触面積等が調節される。な
お、このへら14を、前駆体溶液を吸収するスポンジ状
の部材に置き換えても、同様の効果が得られる。次に第
4実施例を図5を用いて説明する。The spatula 14 is made of a soft material such as silicone rubber and resistant to chemicals so that it does not damage the substrate 4 and does not adversely affect the characteristics of the functional thin film by melting the material of the spatula 14. It is composed of good materials. The spatula 14 does not damage the substrate 4 and does not remove the precursor solution more than necessary.
The contact pressure on the substrate 4, the contact area, etc. are adjusted. The same effect can be obtained by replacing the spatula 14 with a sponge-like member that absorbs the precursor solution. Next, a fourth embodiment will be described with reference to FIG.
【0020】図5に示すようにスピンコート装置の回転
部6に載置された基板4の全面を均一に加熱できる加熱
装置16を設ける。この加熱装置16は、そのスピンコ
ート装置で使用できる最も大きな基板に対しても、均一
に加熱できる様に設けてある。この加熱装置16は、前
駆体溶液の溶媒と、前駆体の金属化合物の有機官能基と
が揮発するような温度、おおよそ、300℃程度まで加
熱することが出来るものである。As shown in FIG. 5, a heating device 16 capable of uniformly heating the entire surface of the substrate 4 placed on the rotating portion 6 of the spin coater is provided. The heating device 16 is provided so as to uniformly heat even the largest substrate that can be used in the spin coater. The heating device 16 can heat to a temperature at which the solvent of the precursor solution and the organic functional group of the metal compound of the precursor are volatilized, about 300 ° C.
【0021】スピンコート装置の回転部6に基板4を置
き、前駆体溶液を滴下し、基板4を回転させる。この
後、膜厚が、目的とする厚さとなるまで回転を行い、次
に回転をさせたまま、加熱装置16により基板4を加熱
し、溶媒等を揮発して除去する。加熱温度は溶媒の種類
や数に応じて決定される。一般に溶媒の沸点よりもやや
高い温度が設定される。また、溶媒が2種類以上ある場
合には、低温側から複数回の加熱を行う。次に第5実施
例を図6を用いて説明する。The substrate 4 is placed on the rotating portion 6 of the spin coater, the precursor solution is dropped, and the substrate 4 is rotated. After that, the substrate 4 is rotated until the film thickness reaches a target thickness, and then the substrate 4 is heated by the heating device 16 while being rotated to volatilize and remove the solvent and the like. The heating temperature is determined according to the type and number of solvents. Generally, a temperature slightly higher than the boiling point of the solvent is set. When there are two or more kinds of solvents, heating is performed a plurality of times from the low temperature side. Next, a fifth embodiment will be described with reference to FIG.
【0022】図6に示すようにスピンコート装置の回転
部6に載置された基板4の全面に均一に加湿できる加湿
装置18を設ける。この加湿装置18はそのスピンコー
ト装置で使用できる最も大きな基板に対しても、均一に
加湿出来る性能を有している。この加湿装置18は前駆
体膜が局所的に加水分解しないように均一に水蒸気を発
生することが出来るものである。As shown in FIG. 6, a humidifying device 18 capable of uniformly humidifying is provided on the entire surface of the substrate 4 placed on the rotating portion 6 of the spin coater. The humidifying device 18 has the ability to evenly humidify the largest substrate that can be used in the spin coater. The humidifier 18 can uniformly generate water vapor so that the precursor film is not locally hydrolyzed.
【0023】スピンコート装置の回転部6に基板4を置
き、前駆体溶液を滴下し、基板4を回転させる。本実施
例で用いられる前駆体溶液の媒質である前駆体は、少な
くとも一成分として金属アルコキシドを含んでいる。基
板4を回転させた後、膜厚が所望のものになるまで回転
を行い、次に回転をさせたまま、加湿装置により水蒸気
を発生させ、前駆体薄膜を加水分解し、ゲル化させる。
その後、この前駆体膜を加熱することにより、溶媒等を
取り除き、乾燥し、焼結する。The substrate 4 is placed on the rotating part 6 of the spin coater, the precursor solution is dropped and the substrate 4 is rotated. The precursor, which is the medium of the precursor solution used in this example, contains a metal alkoxide as at least one component. After the substrate 4 is rotated, the substrate 4 is rotated until a desired film thickness is obtained. Then, while rotating, water vapor is generated by a humidifier to hydrolyze the precursor thin film and gel it.
Then, the precursor film is heated to remove the solvent and the like, dried, and sintered.
【0024】[0024]
【発明の効果】本発明の装置を用いれば、スピンコート
の後、膜厚が基板4上で、その周辺部においても均一な
膜厚の機能性薄膜を得ることが出来る。By using the apparatus of the present invention, it is possible to obtain a functional thin film having a uniform film thickness on the substrate 4 and its peripheral portion after spin coating.
【図1】従来の塗膜装置における薄膜形成の状態を示す
半導体基板の縦断面図であり、(A)は余剰の前駆体溶
液が半導体基板の外周部上にたまっている状態を示す
図、(B)は余剰の前駆体溶液が半導体基板の外周部の
裏面に回り込んでいる状態を示す図、(C)は余剰の前
駆体溶液が半導体基板の外周縁の外側に存在している状
態を示す図。FIG. 1 is a vertical cross-sectional view of a semiconductor substrate showing a state of thin film formation in a conventional coating apparatus, FIG. 1A is a diagram showing a state in which a surplus precursor solution is accumulated on an outer peripheral portion of the semiconductor substrate; (B) is a diagram showing a state in which the excess precursor solution is flowing around the back surface of the outer peripheral portion of the semiconductor substrate, and (C) is a state in which the excess precursor solution is present outside the outer peripheral edge of the semiconductor substrate. FIG.
【図2】本発明による塗布装置の第1実施例を示す斜視
図。FIG. 2 is a perspective view showing a first embodiment of a coating apparatus according to the present invention.
【図3】第2実施例を示す斜視図。FIG. 3 is a perspective view showing a second embodiment.
【図4】第3実施例を示す斜視図。FIG. 4 is a perspective view showing a third embodiment.
【図5】第4実施例を示す斜視図。FIG. 5 is a perspective view showing a fourth embodiment.
【図6】第5実施例を示す斜視図。FIG. 6 is a perspective view showing a fifth embodiment.
2…前駆体薄膜、4…基板、6…回転部、8…(窒素ガ
ス用)ノズル、10…回転中心、12…(溶媒滴下用)
ノズル、14…へら、16…加熱装置、18…加湿装
置。2 ... Precursor thin film, 4 ... Substrate, 6 ... Rotating part, 8 ... (For nitrogen gas) nozzle, 10 ... Rotation center, 12 ... (For solvent dropping)
Nozzle, 14 ... Spatula, 16 ... Heating device, 18 ... Humidifying device.
Claims (1)
の回転手段により前記半導体基板を回転させている間
に、この半導体基板上に機能性薄膜の前駆体溶液を滴下
して前駆体薄膜を成膜する成膜手段とを備えた塗膜装置
において、 前記半導体基板上に存在する余剰の前駆体溶液を除去す
る除去手段を設けたことを特徴とする塗膜装置。1. A rotating means for rotating a semiconductor substrate, and a precursor solution of a functional thin film is dropped on the semiconductor substrate while the semiconductor substrate is being rotated by the rotating means to form a precursor thin film. A coating film apparatus provided with a film forming means for forming a film, characterized in that a removing means for removing an excessive precursor solution existing on the semiconductor substrate is provided.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6823893A JPH06283417A (en) | 1993-03-26 | 1993-03-26 | Film-coating device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6823893A JPH06283417A (en) | 1993-03-26 | 1993-03-26 | Film-coating device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH06283417A true JPH06283417A (en) | 1994-10-07 |
Family
ID=13368011
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6823893A Withdrawn JPH06283417A (en) | 1993-03-26 | 1993-03-26 | Film-coating device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH06283417A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5824361A (en) * | 1994-08-05 | 1998-10-20 | Tdk Corporation | Method forming a uniform photoresist film using gas flow |
WO2006030775A1 (en) * | 2004-09-14 | 2006-03-23 | Tokyo Electron Limited | Coating method and coating device |
WO2016152308A1 (en) * | 2015-03-25 | 2016-09-29 | 株式会社Screenホールディングス | Coating method |
CN115148411A (en) * | 2022-07-18 | 2022-10-04 | 富通集团(天津)超导技术应用有限公司 | YBCO superconducting ring manufacturing device and process method |
-
1993
- 1993-03-26 JP JP6823893A patent/JPH06283417A/en not_active Withdrawn
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5824361A (en) * | 1994-08-05 | 1998-10-20 | Tdk Corporation | Method forming a uniform photoresist film using gas flow |
US6037007A (en) * | 1994-08-05 | 2000-03-14 | Tdk Corporation | Method of forming a uniform photoresist film using gas flow |
WO2006030775A1 (en) * | 2004-09-14 | 2006-03-23 | Tokyo Electron Limited | Coating method and coating device |
JP2006086189A (en) * | 2004-09-14 | 2006-03-30 | Tokyo Electron Ltd | Method and apparatus for coating process |
JP4531502B2 (en) * | 2004-09-14 | 2010-08-25 | 東京エレクトロン株式会社 | Coating processing equipment |
US7832352B2 (en) | 2004-09-14 | 2010-11-16 | Tokyo Electron Limited | Coating treatment method and coating treatment apparatus |
US8697187B2 (en) | 2004-09-14 | 2014-04-15 | Tokyo Electron Limited | Coating treatment method and coating treatment apparatus |
WO2016152308A1 (en) * | 2015-03-25 | 2016-09-29 | 株式会社Screenホールディングス | Coating method |
JP2016182531A (en) * | 2015-03-25 | 2016-10-20 | 株式会社Screenホールディングス | Coating method |
KR20170109024A (en) * | 2015-03-25 | 2017-09-27 | 가부시키가이샤 스크린 홀딩스 | Application method |
US10569297B2 (en) | 2015-03-25 | 2020-02-25 | SCREEN Holdings Co., Ltd. | Coating method |
CN115148411A (en) * | 2022-07-18 | 2022-10-04 | 富通集团(天津)超导技术应用有限公司 | YBCO superconducting ring manufacturing device and process method |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20000530 |