JPH06118046A - Structure of atmosphere sensor - Google Patents
Structure of atmosphere sensorInfo
- Publication number
- JPH06118046A JPH06118046A JP35971091A JP35971091A JPH06118046A JP H06118046 A JPH06118046 A JP H06118046A JP 35971091 A JP35971091 A JP 35971091A JP 35971091 A JP35971091 A JP 35971091A JP H06118046 A JPH06118046 A JP H06118046A
- Authority
- JP
- Japan
- Prior art keywords
- bridge
- thin film
- atmosphere
- bridge portion
- heating resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
Abstract
Description
【０００１】[0001]
【技術分野】本発明は、雰囲気センサの構造、より詳細
には、温度センサ、湿度センサ、ガスセンサ、フローセ
ンサ等として使用可能な雰囲気センサの構造に関する。TECHNICAL FIELD The present invention relates to a structure of an atmosphere sensor, and more particularly to a structure of an atmosphere sensor that can be used as a temperature sensor, a humidity sensor, a gas sensor, a flow sensor and the like.
【０００２】[0002]
【従来技術】従来、ガスセンサとして、金属酸化物半導
体の内部に電極と、電極を兼ねたヒータを内蔵し、該金
属酸化物半導体をヒータにより加熱した時に該金属酸化
物半導体の抵抗値が該金属酸化物半導体の表面でのガス
吸着によって下がることを利用したものが提案されてい
るが、消費電力が大きく、乾電池駆動には適さないとい
う問題があった。この点を改良すべく、架橋構造や片持
梁構造等、空気中に張り出させた張り出し部を設け、こ
の張り出し部の上に金属酸化物半導体を形成するように
し、もって、熱容量を可及的に小さくして応答特性を上
げ、且つ消費電力を低下させる試みが成されている。2. Description of the Related Art Conventionally, as a gas sensor, a metal oxide semiconductor has a built-in electrode and a heater also serving as an electrode, and when the metal oxide semiconductor is heated by the heater, the resistance value of the metal oxide semiconductor is the metal. There is proposed an oxide semiconductor which utilizes the fact that gas is adsorbed on the surface of the oxide semiconductor to lower it, but there is a problem that it consumes a large amount of power and is not suitable for driving a dry battery. In order to improve this point, a bridging structure, a cantilever structure, etc., is provided with an overhanging part that is overhanging in the air, and a metal oxide semiconductor is formed on this overhanging part, so that the heat capacity is increased as much as possible. Attempts have been made to reduce the power consumption by reducing the power consumption by increasing the response characteristics.
【０００３】一方、ガスセンサにおいては、同様の構造
をもつ検出器を２個設け、一方の検出器を周囲雰囲気に
接触させてガス検出用として用い、他方の検出器を周囲
雰囲気に接触させない密封構造とし、この密封構造の検
出器にて周囲の温度を検出して温度補償をすることが行
なわれている。On the other hand, in the gas sensor, two detectors having the same structure are provided, and one of the detectors is brought into contact with the ambient atmosphere to be used for gas detection, and the other detector is not brought into contact with the ambient atmosphere. Then, the temperature of the surroundings is detected by this detector having a sealed structure to perform temperature compensation.
【０００４】図２（ａ）,（ｂ）は、特開平３−９２７
５４号公報に開示された絶対湿度センサの一例を示す平
面図及び断面図で、図示のように、第１のシリコンから
なる基板１に、薄膜抵抗発熱体３を設置する凹部６，７
を形成し、基板１の表面に絶縁保護膜を形成した上、薄
膜抵抗発熱体３を前記凹部に架橋支持するよう設置して
いる。2 (a) and 2 (b) show Japanese Patent Application Laid-Open No. 3-927.
54A and 54B are a plan view and a cross-sectional view showing an example of the absolute humidity sensor disclosed in Japanese Patent Publication No. 54-54, and as shown in the drawing, the recesses 6 and 7 for installing the thin film resistance heating element 3 on the substrate 1 made of the first silicon.
And an insulating protective film is formed on the surface of the substrate 1, and the thin-film resistance heating element 3 is installed so as to cross-link and be supported in the recess.
【０００５】上記の構成により、熱容量を小さくした薄
膜発熱体３の熱が直接基板に熱伝導するのを抑えて、基
板で構成した空間の気体の熱伝導により熱平衝を保ち、
小電力化と応答の高速化を図ることができるようにして
いる。With the above structure, it is possible to prevent the heat of the thin film heating element 3 having a small heat capacity from being directly conducted to the substrate, and to maintain the thermal equilibrium by the heat conduction of the gas in the space constituted by the substrate,
It aims to reduce power consumption and speed up response.
【０００６】また、第２の基板２にも基板１に対応する
位置に前記素子用の空間を作るための凹部６，７と、薄
膜発熱体３のパッド部９を露出させるための切欠き部を
形成しておき、更に基板２に接合用の低融点ガラスペー
スト５を図に斜線で示すパターンにスクリーン印刷した
上、前記ペースト中の溶剤を仮焼成で蒸発させ、続いて
参照素子の空間に封入する乾燥空気又は一定の既知の湿
度の空気雰囲気中で、基板の１と２を対向させ、図示の
ようにそれぞれの凹部で薄膜発熱体を囲む空間を作る配
置にした上、加熱で低融点ガラスを融解して基板を接合
させている。Further, the second substrate 2 has recesses 6 and 7 for forming spaces for the elements at positions corresponding to the substrate 1, and notches for exposing the pad portion 9 of the thin film heating element 3. Is formed, and the low melting glass paste 5 for bonding is screen-printed on the substrate 2 in a pattern shown by hatching in the figure, and the solvent in the paste is evaporated by pre-baking, and then in the space of the reference element. In the dry air to be enclosed or in an air atmosphere having a constant known humidity, the substrates 1 and 2 are opposed to each other, and as shown in the drawing, a space surrounding the thin film heating element is formed by each recess, and a low melting point is obtained by heating. The glass is melted to bond the substrates.
【０００７】以上の接合により、参照側の空間６は外気
と遮断され常に一定の雰囲気に保たれる。この気密封止
される雰囲気は必ずしも大気圧でなくてもよい。このと
き同時に形成される検出側の空間７は対向する位置に接
合部の隙間で形成した通気孔８が構成される。By the above-mentioned joining, the space 6 on the reference side is shielded from the outside air and always kept in a constant atmosphere. The atmosphere to be hermetically sealed does not necessarily have to be atmospheric pressure. At this time, the space 7 on the detection side formed at the same time has a vent hole 8 formed at a position facing each other with a gap between the joints.
【０００８】以上のように構成にした湿度センサは、２
つの薄膜発熱体に電力によって一定のエネルギーを供給
して自己加熱させると、それぞれ参照用空間６と検出用
空間７の水蒸気量、即ち、絶対湿度に対応する空間の熱
伝導度によって放熱し、一定の温度になって、それぞれ
一定の抵抗値をもつので、その差をブリッジ回路の非平
衝電位の出力として検出して絶対湿度を計測することが
できる。The humidity sensor configured as described above has two
When the two thin film heating elements are supplied with constant energy by electric power to be self-heated, heat is radiated by the amount of water vapor in the reference space 6 and the detection space 7, that is, the thermal conductivity of the space corresponding to the absolute humidity, and is constant. Since the temperatures become constant and have a constant resistance value, the difference can be detected as the output of the non-equal potential of the bridge circuit to measure the absolute humidity.
【０００９】以上に、基板に形成した凹部の上に薄膜絶
縁体を架橋し、その上に発熱抵抗体を配設してガスを検
出したり、湿度を検出したりする例について説明した
が、同様にして架橋された薄膜絶縁体の上に配設された
発熱抵抗体の熱放射に伴う該発熱抵抗体の抵抗値の変化
から、気体の流速（流量）を計測するフローセンサ、周
囲温度を検出する温度センサ等についても種々提案され
ている。An example in which a thin film insulator is cross-linked on the concave portion formed on the substrate and a heating resistor is provided on the concave portion to detect gas or humidity is described above. Similarly, a flow sensor that measures the flow velocity (flow rate) of the gas from the change in the resistance value of the heating resistor arranged on the cross-linked thin film insulator due to the heat radiation of the heating resistor, and the ambient temperature Various types of temperature sensors for detection have been proposed.
【００１０】斯様に、基板に形成された凹部上に薄膜絶
縁体を架橋し、その上に発熱抵抗体を配設し、該発熱体
の抵抗値の変化を利用して周囲雰囲気の状態を検出する
ようにしたセンサは既に種々提案されているが、検出感
度を上げるために、熱容量を小さくする必要があり、そ
のためには、橋架部の構造を極力小さくする必要があ
る。As described above, the thin film insulator is cross-linked on the concave portion formed on the substrate, and the heat generating resistor is disposed on the recess, and the change in the resistance value of the heat generating element is used to control the state of the ambient atmosphere. Although various sensors for detecting have already been proposed, it is necessary to reduce the heat capacity in order to increase the detection sensitivity, and for that purpose, it is necessary to make the structure of the bridge portion as small as possible.
【００１１】しかしながら、橋架部を小さくすると、架
橋部の機械的強度が弱くなり、機械的な振動等によって
架橋部が切断されてしまう等の問題があった。However, when the bridge portion is made smaller, the mechanical strength of the bridge portion becomes weaker, and there is a problem that the bridge portion is cut by mechanical vibration or the like.
【００１２】[0012]
【目的】本発明は、上述のごとき実情に鑑みてなされた
もので、特に、橋架薄膜絶縁体の支持架橋部における構
造強化、更には、前記橋架された薄膜絶縁体上に配設さ
れる発熱抵抗体の破損防止を目的としてなされたもので
ある。[PROBLEMS] The present invention has been made in view of the above circumstances, and in particular, structural strengthening in a support bridge portion of a bridge thin film insulator, and further, heat generation provided on the bridged thin film insulator. The purpose is to prevent damage to the resistor.
【００１３】[0013]
【構成】本発明は、上記目的を達成するために、（１）
凹部を有する基板と、該基板上に配設された固定部と該
固定部に続く支持架橋部と該支持架橋部を介して前記凹
部の上に橋架された橋架部とから成る薄膜絶縁体と、該
薄膜絶縁体の上に配設された発熱抵抗体とから成り、該
発熱抵抗体が発生する熱が測定される雰囲気によって奪
われることによって生じる該発熱抵抗体の抵抗値から該
雰囲気を測定する雰囲気センサにおいて、前記薄膜絶縁
体の固定部と支持架橋部との間の架橋端部における平面
形状が鈍角に形成されていることを特徴としたものであ
り、更には、（２）前記（１）において、前記薄膜抵抗
体は前記架橋端部に続く支持架橋部が狭幅に形成され、
該狭幅の支持架橋部に続く前記橋架部が広幅に形成され
ており、かつ、前記支持架橋部から前記橋架部に続く架
橋端部が鈍角に形成されていること、更には、（３）前
記（２）において、前記橋架部が略正方形に形成され、
該正方形の薄膜絶縁体上に形成される発熱抵抗体が該正
方形の２辺間に平行にジグザグ状に配設されているこ
と、更には、前記（３）において、（４）前記平行に配
設された発熱抵抗体の間隔が中央部において広くなって
いること、或いは、（５）前記橋架部の中央部又は中央
部付近に貫通孔を有することを特徴としたものである。
以下、本発明の実施例に基いて説明する。In order to achieve the above object, the present invention provides (1)
A thin film insulator comprising a substrate having a concave portion, a fixed portion disposed on the substrate, a support bridge portion following the fixed portion, and a bridge portion bridged above the concave portion via the support bridge portion. A heating resistor disposed on the thin-film insulator, and the atmosphere is measured from the resistance value of the heating resistor caused by the heat generated by the heating resistor being taken away by the atmosphere to be measured. In the atmosphere sensor described above, the planar shape at the bridge end portion between the fixed portion and the support bridge portion of the thin film insulator is formed to have an obtuse angle, and further, (2) above ( 1) In the thin film resistor, a support bridge portion following the bridge end portion is formed to have a narrow width,
The bridge portion following the narrow support bridge portion is formed wide, and the bridge end portion continuing from the support bridge portion to the bridge portion is formed into an obtuse angle, and further (3) In (2) above, the bridge portion is formed into a substantially square shape,
The heating resistors formed on the square thin-film insulator are arranged in a zigzag shape in parallel between two sides of the square, and further in (3), (4) the parallel arrangement. It is characterized in that the interval between the heating resistors provided is wide in the central portion, or (5) the through-hole is provided in the central portion of the bridge portion or in the vicinity of the central portion.
Hereinafter, it demonstrates based on the Example of this invention.
【００１４】図１は、本発明による雰囲気センサの一実
施例を説明するための要部構成図で、（ａ）図は平面
図、（ｂ）図は（ａ）図のＢ−Ｂ線断面図で、前述のよ
うに、基板１０は凹部１１を有し、該凹部１１の上には
薄膜絶縁体１２の橋架部１２ｃが設けられており、該橋
架部１２ｃの上には発熱抵抗体１３が配設されている。
すなわち、薄膜絶縁体１２は、基板１０上に配設された
固定部１２ａと、該固定部１２ａに続く狭幅の架橋支持
部１２ｂと、該架橋支持部１２ｂに続く幅広の橋架部１
２ｃとよりなり、該橋架部１２ｃの上に発熱抵抗体１３
の発熱部が配設されている。1A and 1B are configuration diagrams of a main part for explaining an embodiment of an atmosphere sensor according to the present invention. FIG. 1A is a plan view and FIG. 1B is a sectional view taken along line BB in FIG. 1A. In the figure, as described above, the substrate 10 has the concave portion 11, the bridge portion 12c of the thin film insulator 12 is provided on the concave portion 11, and the heating resistor 13 is provided on the bridge portion 12c. Is provided.
That is, the thin-film insulator 12 includes a fixed portion 12a arranged on the substrate 10, a narrow bridge support portion 12b following the fixed portion 12a, and a wide bridge portion 1 following the bridge support portion 12b.
2c, and the heating resistor 13 on the bridge 12c.
The heat generating part is disposed.
【００１５】而して、従来技術においては、薄膜絶縁体
１２は、支持架橋端部Ａが、図中に点線にて示すよう
に、直角に形成されているため、この部分からひび割れ
等が入り、機械的な強度が弱かった。Thus, in the prior art, the thin film insulator 12 has the support bridge end A formed at a right angle as shown by the dotted line in the figure, so that cracks or the like enter from this part. , Mechanical strength was weak.
【００１６】本発明の第１の目的は、この支持架橋端部
Ａにおける薄膜絶縁体１２の機械的強度の増大を図るこ
とであり、図示のように、この部分の形状を鈍角とし、
これによって、前述のごとき、ひび割れ等を防止してい
る。A first object of the present invention is to increase the mechanical strength of the thin film insulator 12 at the supporting bridge end portion A, and as shown in the figure, the shape of this portion is an obtuse angle,
This prevents cracks and the like as described above.
【００１７】前記支持架橋端部に続く橋架部１２ｂの形
状は、そのまま延長して細長の橋架部とし、その上に発
熱抵抗体１３を配設するようにしても良いが、そのよう
にする場合には、通常、発熱抵抗体の抵抗を大きくする
ために、橋架部の長さを長くする必要があり、熱分布が
悪く、従って、感度が悪く、しかも、消費電力が多く、
局部発熱によって劣化しやすい等の問題がある。The shape of the bridge portion 12b following the end of the support bridge may be extended as it is to form an elongated bridge portion, and the heating resistor 13 may be disposed on the elongated bridge portion. In general, in order to increase the resistance of the heating resistor, it is necessary to lengthen the length of the bridge portion, the heat distribution is poor, and therefore the sensitivity is poor and the power consumption is high.
There is a problem that it is easily deteriorated by local heat generation.
【００１８】そのため、前記支持架橋部１２ｂ部に続く
橋架部１２ｃを略正方形に広げた広幅部とし、この橋架
部１２ｃに発熱抵抗体１３を配設するようにし、もっ
て、熱分布の均一化を図り、局部発熱による劣化を防止
することが提案されている。Therefore, the bridge portion 12c following the support bridge portion 12b is widened into a substantially square shape, and the heating resistor 13 is arranged on the bridge portion 12c, so that the heat distribution can be made uniform. It has been proposed to prevent deterioration due to local heat generation.
【００１９】本発明の第２の目的は、前記狭幅の支持架
橋部１２ｂと広幅の橋架部１２ｃとの接続部すなわち支
持架橋部１２ｂの他方の端部Ｂ部における機械的強度を
図ることであり、そのため、このＢ部における薄膜絶縁
体１２の平面形状を、点線にて示すような直角構造とせ
ず、実線にて示すように、鈍角とし、これによって、こ
のＢ部におけるひび割れをも防止するようにしている。A second object of the present invention is to increase the mechanical strength of the connecting portion between the narrow support bridge portion 12b and the wide bridge portion 12c, that is, the other end B of the support bridge portion 12b. Therefore, the planar shape of the thin-film insulator 12 in the B portion is not an orthogonal structure as shown by the dotted line, but an obtuse angle as shown by the solid line, which also prevents cracks in the B portion. I am trying.
【００２０】前記の広幅の橋架部１２ｃには、前述のよ
うに、発熱抵抗体１３の発熱部が配設されるが、この発
熱抵抗体１３も、前記狭幅の架橋支持部１２ｂから広幅
の橋架部１２ｃに移る時に直角に配設すると、この部分
での機械的強度が低下する。As described above, the heat generating portion of the heat generating resistor 13 is arranged in the wide bridge portion 12c, and the heat generating resistor 13 is also widened from the narrow bridge support portion 12b. If they are arranged at a right angle when moving to the bridge portion 12c, the mechanical strength at this portion will be reduced.
【００２１】本発明の第３の目的は、この部分における
発熱抵抗体１３の機械的強度の増大を図ることにあり、
そのため、本発明においては、薄膜絶縁体１２は、この
広幅の橋架部１２ｃにおいて略正方形に形成され、前記
発熱抵抗体１３は、前記狭幅の支持架橋部１２ｂからこ
の広幅の橋架部１２ｃに至る部分で鈍角で移行し、これ
によって、この部分での発熱抵抗体１３の機械的強度の
増大を図っている。A third object of the present invention is to increase the mechanical strength of the heating resistor 13 in this portion,
Therefore, in the present invention, the thin film insulator 12 is formed in a substantially square shape in the wide bridge portion 12c, and the heating resistor 13 extends from the narrow support bridge portion 12b to the wide bridge portion 12c. The transition is made at an obtuse angle in the portion, thereby increasing the mechanical strength of the heating resistor 13 in this portion.
【００２２】前述のように、橋架部１２ｃ上における前
記Ｂ部での発熱抵抗体１３の機械的強度を大きくするた
めには、薄膜絶縁体の橋架部１２ｃの形状は、好ましく
は、正方形であり、この正方形の対向する２辺Ｄ1，Ｄ2
間に平行に発熱抵抗体１３をジグザグ状に配設すればよ
い。As described above, in order to increase the mechanical strength of the heating resistor 13 at the portion B on the bridge portion 12c, the shape of the bridge portion 12c of the thin film insulator is preferably square. , The two opposite sides of this square D 1 , D 2
The heating resistors 13 may be arranged in a zigzag pattern in parallel with each other.
【００２３】而して、上述のごとく構成されたセンサを
実際に使用する場合、発熱抵抗体１３に電力を供給する
駆動電源が、例えば、ノイズや平滑回路の不良によって
生じるリップル等によって変動すると、発熱抵抗体部が
熱振動を起して共振し、共振することによって機械的な
破壊を生じることがある。When the sensor constructed as described above is actually used, if the driving power supply for supplying power to the heating resistor 13 fluctuates due to, for example, noise or ripple caused by a defective smoothing circuit, The heat generating resistor portion may cause thermal vibration and resonate, and the resonance may cause mechanical breakdown.
【００２４】本発明の第４の目的は、上述のごとき熱振
動を防止することにあるが、この熱振動を防止するため
には、均一な温度分布を得ることが必要である。而し
て、上述のごとき構造のセンサの場合、橋架部１２ｃの
中央部は周辺部より温度が高く、焼損しやすいので、こ
の部分における発熱抵抗体１３の間隔ｄ2を周辺部の間
隔ｄ1に比して大きくすればよく、このようにすると、
温度分布が均一化し、中央部が焼損する恐れもなく、ま
た、熱共振を起こす心配もない。The fourth object of the present invention is to prevent the thermal vibration as described above, but in order to prevent the thermal vibration, it is necessary to obtain a uniform temperature distribution. And Thus, in the case of the sensor described above, such as structure, the central portion of the bridge portion 12c is higher temperature than the peripheral portion, so easy to burn, distance d 1 of the peripheral portion of the distance d 2 of the heating elements 13 in this portion It is better to make it larger than
The temperature distribution becomes uniform, there is no risk of burning the central part, and there is no risk of causing thermal resonance.
【００２５】なお、熱分布を均一にするためには、前述
のように、発熱抵抗体１３の間隔を変えるだけでなく、
薄膜絶縁体１２の橋架部１２ｃの中央部又は中央部付近
に孔１４を設けて中央部の熱を発散させるようにしても
よい。In order to make the heat distribution uniform, as described above, not only the interval of the heating resistors 13 is changed,
A hole 14 may be provided at or near the central portion of the bridge portion 12c of the thin film insulator 12 to dissipate heat in the central portion.
【００２６】上述のようにして温度分布を均一化する
と、発熱抵抗体や薄膜絶縁体の焼損を防止することがで
きるだけでなく、振動を分散させて共振を発生させない
ので、共振による機械的破壊を防止することができ、し
かも、発熱抵抗体を交流駆動（整流回路不要）したり、
パハス（サンプリング）駆動することが可能となる。If the temperature distribution is made uniform as described above, not only can the heating resistor and the thin-film insulator be prevented from being burnt out, but also the vibrations cannot be dispersed to cause resonance, so that mechanical destruction due to resonance can occur. It is possible to prevent it, and to drive the heating resistor with alternating current (no rectifier circuit required),
It is possible to drive the Pajas (sampling).
【００２７】[0027]
【効果】以上の説明から明らかなように、本発明による
と、基板の凹部の上に橋架された薄膜絶縁体及び該薄膜
絶縁体上に配設された発熱抵抗体の機械的強度が強くな
り、機械的なひび割れ等による破損がなくなり、更に
は、局部的な発熱のない、均一分布の発熱が得られるた
め、熱振動に起因する共振等が発生する心配がなく、パ
ハス駆動や交流駆動が可能なセンサを得ることができ
る。As is apparent from the above description, according to the present invention, the mechanical strength of the thin film insulator bridged over the concave portion of the substrate and the heating resistor arranged on the thin film insulator is increased. Also, damage due to mechanical cracks, etc. is eliminated, and since there is no local heat generation and even heat distribution is obtained, there is no concern that resonance etc. due to thermal vibration will occur, and Pahas drive or AC drive can be performed. Possible sensors can be obtained.
【図１】 本発明によるセンサの一実施例を説明するた
めの要部構成図で、（ａ）図は平面図、（ｂ）図は
（ａ）図のＢ−Ｂ線断面図である。1A and 1B are configuration diagrams of a main part for explaining an embodiment of a sensor according to the present invention, in which FIG. 1A is a plan view and FIG. 1B is a sectional view taken along line BB in FIG. 1A.
【図２】 従来のセンサの一例を説明するための構成図
で、（ａ）図は平面図、（ｂ）図は（ａ）図のＢ−Ｂ線
断面拡大図である。2A and 2B are configuration diagrams for explaining an example of a conventional sensor, FIG. 2A is a plan view, and FIG. 2B is an enlarged cross-sectional view taken along line BB of FIG. 2A.
１０…センサ基板、１１…凹部、１２…薄膜絶縁体、１
２ａ…固定部、１２ｂ…支持架橋部、１２ｃ…橋架部、
１３…発熱抵抗体、１４…穴。10 ... Sensor substrate, 11 ... Recessed portion, 12 ... Thin film insulator, 1
2a ... fixed part, 12b ... support bridge part, 12c ... bridge part,
13 ... Heating resistor, 14 ... Hole.
Claims (5)
れた固定部と該固定部に続く支持架橋部と該支持架橋部
を介して前記凹部の上に橋架された橋架部とから成る薄
膜絶縁体と、該薄膜絶縁体の上に配設された発熱抵抗体
とから成り、該発熱抵抗体が発生する熱が測定される雰
囲気によって奪われることによって生じる該発熱抵抗体
の抵抗値から該雰囲気を測定する雰囲気センサにおい
て、前記薄膜絶縁体の固定部と支持架橋部との間の架橋
端部における平面形状が鈍角に形成されていることを特
徴とする雰囲気センサの構造。1. A substrate having a concave portion, a fixing portion disposed on the substrate, a supporting bridge portion following the fixing portion, and a bridge portion bridged over the concave portion through the supporting bridge portion. And a heating resistor disposed on the thin film insulator, the resistance value of the heating resistor being generated when the heat generated by the heating resistor is taken away by the atmosphere to be measured. In the atmosphere sensor for measuring the atmosphere described above, the structure of the atmosphere sensor is characterized in that the planar shape at the bridge end portion between the fixed portion and the support bridge portion of the thin film insulator is formed as an obtuse angle.
持架橋部が狭幅に形成され、該狭幅の支持架橋部に続く
前記橋架部が広幅に形成されており、かつ、前記支持架
橋部から前記橋架部に続く架橋端部が鈍角に形成されて
いることを特徴とする請求項１に記載の雰囲気センサの
構造。2. The thin-film resistor has a support bridge portion that follows the bridge end portion is narrowly formed, the bridge portion that follows the narrow support bridge portion is formed wide, and the support bridge is formed. The structure of the atmosphere sensor according to claim 1, wherein an end of the bridge extending from the bridge to the bridge is formed at an obtuse angle.
方形の薄膜絶縁体上に形成される発熱抵抗体が該正方形
の２辺間に平行にジグザグ状に配設されていることを特
徴とする請求項２に記載の雰囲気センサの構造。3. The bridge portion is formed in a substantially square shape, and heating resistors formed on the square thin-film insulator are arranged in a zigzag shape in parallel between two sides of the square shape. The structure of the atmosphere sensor according to claim 2.
が中央部において広くなっていることを特徴とする請求
項３に記載の雰囲気センサの構造。4. The structure of the atmosphere sensor according to claim 3, wherein a space between the heating resistors arranged in parallel is wide in a central portion.
通孔を有することを特徴とする請求項３に記載の雰囲気
センサの構造。5. The structure of the atmosphere sensor according to claim 3, wherein a through hole is provided at or near a central portion of the bridge portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03359710A JP3086314B2 (en) | 1991-12-27 | 1991-12-27 | Atmosphere sensor structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03359710A JP3086314B2 (en) | 1991-12-27 | 1991-12-27 | Atmosphere sensor structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06118046A true JPH06118046A (en) | 1994-04-28 |
| JP3086314B2 JP3086314B2 (en) | 2000-09-11 |
Family
ID=18465907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03359710A Expired - Fee Related JP3086314B2 (en) | 1991-12-27 | 1991-12-27 | Atmosphere sensor structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3086314B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005308676A (en) * | 2004-04-26 | 2005-11-04 | Kuramoto Seisakusho Co Ltd | Heater device, and gas sensor unit using the same |
| JP2007064908A (en) * | 2005-09-02 | 2007-03-15 | Ritsumeikan | Semiconductor type thin film gas sensor |
| JP2011153996A (en) * | 2010-01-28 | 2011-08-11 | Figaro Engineerign Inc | Gas sensor |
| JP2012098232A (en) * | 2010-11-05 | 2012-05-24 | Figaro Eng Inc | Gas sensor |
| EP2559996A1 (en) | 2011-08-16 | 2013-02-20 | Nxp B.V. | Gas sensor |
| JP2014190878A (en) * | 2013-03-27 | 2014-10-06 | Ngk Spark Plug Co Ltd | Gas sensor |
| US9453807B2 (en) | 2014-04-08 | 2016-09-27 | Ams International Ag | Thermal conductivity gas sensor with amplification material |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014041164A (en) * | 2013-12-05 | 2014-03-06 | New Cosmos Electric Corp | Gas detection element |
-
1991
- 1991-12-27 JP JP03359710A patent/JP3086314B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005308676A (en) * | 2004-04-26 | 2005-11-04 | Kuramoto Seisakusho Co Ltd | Heater device, and gas sensor unit using the same |
| JP2007064908A (en) * | 2005-09-02 | 2007-03-15 | Ritsumeikan | Semiconductor type thin film gas sensor |
| JP2011153996A (en) * | 2010-01-28 | 2011-08-11 | Figaro Engineerign Inc | Gas sensor |
| JP2012098232A (en) * | 2010-11-05 | 2012-05-24 | Figaro Eng Inc | Gas sensor |
| EP2559996A1 (en) | 2011-08-16 | 2013-02-20 | Nxp B.V. | Gas sensor |
| US9244031B2 (en) | 2011-08-16 | 2016-01-26 | Nxp, B.V. | Gas sensor |
| JP2014190878A (en) * | 2013-03-27 | 2014-10-06 | Ngk Spark Plug Co Ltd | Gas sensor |
| US9453807B2 (en) | 2014-04-08 | 2016-09-27 | Ams International Ag | Thermal conductivity gas sensor with amplification material |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3086314B2 (en) | 2000-09-11 |
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