JP3083901B2 - Atmosphere sensor - Google Patents
Atmosphere sensorInfo
- Publication number
- JP3083901B2 JP3083901B2 JP04020459A JP2045992A JP3083901B2 JP 3083901 B2 JP3083901 B2 JP 3083901B2 JP 04020459 A JP04020459 A JP 04020459A JP 2045992 A JP2045992 A JP 2045992A JP 3083901 B2 JP3083901 B2 JP 3083901B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- concave portion
- atmosphere
- detection chamber
- space
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Description
【０００１】[0001]
【技術分野】本発明は、雰囲気センサの構造に関し、よ
り詳細には、温度センサ，ガスセンサ等の雰囲気ガスを
検知する雰囲気センサの構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of an atmosphere sensor, and more particularly, to a structure of an atmosphere sensor for detecting an atmosphere gas such as a temperature sensor and a gas sensor.
【０００２】[0002]
【従来技術】従来、ガスセンサとして、金属酸化物半導
体の内部に電極と、電極を兼ねたヒータを内蔵し、該金
属酸化物半導体をヒータにより加熱した時に該金属酸化
物半導体の抵抗値が該金属酸化物半導体の表面でのガス
吸着によって下がることを利用したものが提案されてい
るが、消費電力が大きく、乾電池駆動には適さないとい
う問題があった。この点を改良すべく、架橋構造や片持
梁構造等、空気中に張り出させた橋架部を設け、この橋
架部の上に金属酸化物半導体を形成するようにし、もっ
て、熱容量を可及的に小さくして応答特性を上げ、且つ
消費電力を低下させる試みが成されている。2. Description of the Related Art Conventionally, as a gas sensor, an electrode and a heater serving also as an electrode are built in a metal oxide semiconductor, and when the metal oxide semiconductor is heated by the heater, the resistance value of the metal oxide semiconductor becomes higher than that of the metal oxide semiconductor. Although an oxide semiconductor utilizing the effect of gas adsorption on the surface of the oxide semiconductor has been proposed, there is a problem that power consumption is large and the oxide semiconductor is not suitable for driving a dry battery. In order to improve this point, a bridge section that protrudes into the air, such as a bridge structure or a cantilever structure, is provided, and a metal oxide semiconductor is formed on the bridge section, thereby increasing the heat capacity. Attempts have been made to improve the response characteristics by reducing the power consumption and to reduce the power consumption.
【０００３】一方、ガスセンサにおいては、同様の構造
をもつ検出器を２個設け、一方の検出器を周囲雰囲気に
接触させてガス検出用として用い、他方の検出器を周囲
雰囲気に接触させない密封構造とし、この密封構造の検
出器にて周囲の温度を検出して温度補償をすることが行
なわれている。On the other hand, in a gas sensor, two detectors having the same structure are provided, and one of the detectors is used for gas detection by being brought into contact with the surrounding atmosphere, and the other is not sealed with the surrounding atmosphere. The ambient temperature is detected by the detector having the sealed structure to compensate for the temperature.
【０００４】図３（ａ）,（ｂ）は、特開平３−９２７
５４号公報に開示された絶対湿度センサの一例を示す平
面図及び断面図で、図示のように、シリコンからなる第
１の基板１に、薄膜抵抗発熱体よりなる検出素子３を設
置する凹部６,７を形成し、基板１の表面に絶縁保護膜
を形成した上、薄膜抵抗発熱体よりなる検出素子３を前
記凹部に架橋支持するよう設置する。FIGS. 3 (a) and 3 (b) show Japanese Unexamined Patent Publication No. 3-927.
54 is a plan view and a cross-sectional view showing an example of an absolute humidity sensor disclosed in Japanese Patent Application Laid-Open No. 54-54, as shown, a concave portion 6 in which a detecting element 3 made of a thin-film resistance heating element is placed on a first substrate 1 made of silicon. , 7 are formed, an insulating protective film is formed on the surface of the substrate 1, and the detecting element 3 composed of a thin-film resistance heating element is installed so as to be bridge-supported in the recess.
【０００５】上記のように構成することにより、熱容量
を小さくした検出素子３の熱が直接基板に熱伝導するの
を抑えて、基板で構成した空間の気体の熱伝導により熱
平衝を保ち、小電力化と応答の高速化を図ることができ
るようにしている。[0005] With the above configuration, the heat of the detecting element 3 having a reduced heat capacity is prevented from directly conducting to the substrate, and the thermal balance is maintained by the heat conduction of the gas in the space formed by the substrate. The power consumption and the response speed can be reduced.
【０００６】また、第２の基板２にも基板１に対応する
位置に前記検出素子３用の空間を作るための凹部６,７
と、検出素子３のパッド部９を露出させるための切欠き
部を形成しておき、更に、基板２に接合用の低融点ガラ
スペースト５を図に斜線で示すパターンにスクリーン印
刷した上、前記ペースト中の溶剤を仮焼成で蒸発させ、
続いて参照素子の空間に封入する乾燥空気か一定の既知
の湿度の空気雰囲気中で、基板の１と２を対向させ、図
示のようにそれぞれの凹部で薄膜発熱体の検出素子３を
囲む空間を作る配置にした上、加熱で低融点ガラスを融
解して基板を接合させる。Also, concave portions 6 and 7 for forming a space for the detecting element 3 at a position corresponding to the substrate 1 on the second substrate 2.
And a notch for exposing the pad 9 of the detection element 3, and a low-melting glass paste 5 for bonding is screen-printed on the substrate 2 in a pattern shown by oblique lines in FIG. The solvent in the paste is evaporated by calcination,
Subsequently, the substrates 1 and 2 are opposed to each other in a dry air filled in the space of the reference element or in an air atmosphere of a constant known humidity, and the space surrounding the detecting element 3 of the thin film heating element in each concave portion as shown in the figure. Then, the low-melting glass is melted by heating to bond the substrates.
【０００７】以上の接合により、参照側の空間６は外気
と遮断され常に一定の雰囲気に保たれる。この気密封止
される雰囲気は必ずしも大気圧でなくてもよい。このと
き同時に形成される検出側の空間７は対向する位置に接
合部の隙間で形成した通気孔８が構成される。[0007] By the above-mentioned joining, the reference space 6 is cut off from the outside air, and is always kept in a constant atmosphere. The atmosphere to be hermetically sealed does not necessarily have to be atmospheric pressure. At this time, the space 7 on the detection side, which is formed at the same time, has a ventilation hole 8 formed at a position opposed to the space 7 at the joint.
【０００８】以上のようにして構成にした湿度センサ
は、２つの検出素子３に電力によって一定のエネルギー
を供給して自己加熱させると、それぞれ参照用空間６と
検出用空間７の水蒸気量、即ち、絶対湿度に対応する空
間の熱伝導度によって放熱し、一定の温度になって、そ
れぞれ一定の抵抗値をもつので、その差をブリッジ回路
の非平衝電位の出力として検出して絶対湿度を計測する
ことができる。In the humidity sensor constructed as described above, when a constant energy is supplied to the two detecting elements 3 by electric power and self-heated, the amounts of water vapor in the reference space 6 and the detecting space 7, ie, the amounts of water vapor in the detecting space 7, respectively. , Heat is radiated by the thermal conductivity of the space corresponding to the absolute humidity, it becomes a constant temperature, and each has a certain resistance value, so the difference is detected as the output of the non-equilibrium potential of the bridge circuit and the absolute humidity is detected. Can be measured.
【０００９】上述の従来の雰囲気センサは、参照側の空
間６と検出側の空間７とは、基板１と基板２との凹部６
および７とで形成され、その内容積は等しく、小さい。
参照側の空間６は密閉されていて、薄膜発熱体３の熱が
外部に発放されにくいのに加えて、内壁面は熱輻射によ
り加熱され、検出側の空間７へ熱伝達されるので検出側
の空間６へ温度影響を及ぼす。検出側の空間７と参照側
の空間６との距離が近い程影響が大きく、雰囲気が一定
であっても温度平衡状態とはなりにくく、時間経過とと
もにバランスがずれ易い。しかも、基板２の熱容量が大
きいので、徐々にバランスがくずれていく経時変化があ
る。In the above-mentioned conventional atmosphere sensor, the space 6 on the reference side and the space 7 on the detection side are formed by the concave portions 6 of the substrate 1 and the substrate 2.
And 7 having equal and small internal volumes.
The space 6 on the reference side is sealed, so that the heat of the thin-film heating element 3 is not easily radiated to the outside, and the inner wall surface is heated by heat radiation and transferred to the space 7 on the detection side. Temperature effect on the side space 6. The shorter the distance between the space 7 on the detection side and the space 6 on the reference side, the greater the effect. Even if the atmosphere is constant, it is difficult to achieve a temperature equilibrium state, and the balance tends to shift over time. In addition, since the heat capacity of the substrate 2 is large, there is a temporal change in which the balance is gradually lost.
【００１０】また、通気孔８は低融点ガラスを融解し、
接合した接合部でガラス厚さにより通気孔８の断面積，
検出側の空間６および参照用の空間７の容積が規定され
るので、ガラス厚さの変化により特性のバラツキも大き
くなる。通気孔８を検出側の空間７の基板２に設ける他
の方法もあるが、このときの通気孔８の孔径は板厚に比
し小さいので、簡易なエッチング加工による孔加工では
精度が上がらず、精度を上げようとするとコスト高にな
る。The vent 8 melts the low-melting glass,
The cross-sectional area of the air hole 8 is determined by the thickness of the glass
Since the volumes of the space 6 on the detection side and the space 7 for reference are defined, the variation in the characteristics increases due to the change in the glass thickness. There is another method of providing the ventilation hole 8 in the substrate 2 in the space 7 on the detection side. However, since the diameter of the ventilation hole 8 at this time is smaller than the plate thickness, the accuracy is not improved by the simple etching processing. However, trying to increase the accuracy increases the cost.
【００１１】図４は、従来の検出側の空間の他の通気孔
を示す図で、検出側の空間６の基板１と基板２との凹部
形状に寸法差を与えて、寸法差に応じた通気孔８の大き
さとするものである。しかし、基板２は検出側の空間６
における薄膜発熱体３のカバーとなるものであるから、
通気孔８の大きさは極小にとどめなければならず、この
ような通気孔８を精度良く製作するためには高いコスト
となる。FIG. 4 is a view showing another ventilation hole in the conventional detection-side space, and a dimensional difference is given to the concave shape between the substrate 1 and the substrate 2 in the detection-side space 6 in accordance with the dimensional difference. The size of the ventilation hole 8 is set. However, the substrate 2 has a space 6 on the detection side.
Is a cover for the thin film heating element 3 in
The size of the ventilation hole 8 must be kept to a minimum, and it is costly to manufacture such a ventilation hole 8 with high accuracy.
【００１２】[0012]
【目的】本発明は、上述のごとき実情に鑑みてなされた
もので、（１）検出用室から外気に連通する通気孔を高
精度で安価に加工し、製品の特性上のバラツキを小さく
すること、更には、（２）高感度で長期安定した特性の
雰囲気センサを提供することを目的とするものである。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and (1) reduces the variation in the characteristics of products by processing the ventilation holes communicating from the detection chamber to the outside air with high accuracy and low cost. Another object of the present invention is to provide (2) an atmosphere sensor having high sensitivity and long-term stable characteristics.
【００１３】[0013]
【構成】本発明は、上記目的を達成するために、（１）
２つの凹部を有する基板と、該基板の各々の凹部上に架
橋支持される薄膜絶縁体と、各々の薄膜絶縁体上に形成
された抵抗の等しい発熱抵抗体と、前記凹部を覆被する
カバーとからなり、一方の凹部を密閉して参照用室と
し、他方の凹部を外気に導通する検出用室として、前記
参照用室と検出用室との前記発熱抵抗体の放熱量の差に
基づいて雰囲気を検知する雰囲気センサにおいて、前記
検出用室の凹部から外気への導通を基板凹部底面から表
面に到る通気孔溝を介して行い、該通気孔溝を基板凹部
壁面に形成し、カバー外部に開口したこと、更には、
（２）前記（１）において、前記発熱抵抗体を、参照用
室および検出用室上で架橋される架橋支持部の幅よりも
大きい辺を有する正方形状の発熱部薄膜絶縁体上に設け
たことを特徴とするものである。以下、本発明の実施例
に基づいて説明する。To achieve the above object, the present invention provides (1 )
A substrate having two concave portions, a thin-film insulator bridge-supported on each concave portion of the substrate, a heating resistor having the same resistance formed on each thin-film insulator, and a cover covering the concave portion One of the recesses is hermetically sealed to serve as a reference chamber, and the other of the recesses is used as a detection chamber that communicates with the outside air, based on the difference in the amount of heat release of the heating resistor between the reference chamber and the detection chamber. In the atmosphere sensor for detecting the atmosphere by detecting the atmosphere, the conduction from the concave portion of the detection chamber to the outside air is performed through the vent groove extending from the bottom surface of the substrate concave portion to the surface, and the vent groove is formed on the wall surface of the concave portion of the substrate. That it opened to the outside,
(2) In the above (1), the heating resistor, the reference chamber and that have a greater side than the width of the cross support portion which is crosslinked on the detection chamber positive square-shaped heating portion thin film insulating body on It is characterized by being provided in. Hereinafter, a description will be given based on examples of the present invention.
【００１４】図１（ａ）,（ｂ）は、本発明における雰
囲気センサを説明するための図で、（ａ）図は（ｂ）図
の矢視Ｂ−Ｂ線平面図、（ｂ）図は（ａ）図のＡ−Ａ線
断面図であり、図中、１０は基板、１１は薄膜絶縁体、
１２，１３は発熱抵抗体、１４は参照用室、１５は検出
用室、１６は通気孔溝、１６ａは開口、１７，１８はカ
バーである。FIGS. 1A and 1B are views for explaining an atmosphere sensor according to the present invention. FIG. 1A is a plan view taken along line BB of FIG. 1B, and FIG. Is a cross-sectional view taken along the line AA of (a) of FIG.
Reference numerals 12 and 13 denote heating resistors, 14 a reference chamber, 15 a detection chamber, 16 a vent groove, 16a an opening, and 17 and 18 covers.
【００１５】図示の基板１０は結晶面が（１００）のシ
リコン（Ｓi）の平板で、上面にＳiＯ2の薄膜絶縁体１
１を形成し、更に金属薄膜を蒸着，ＣＶＤ，スパッタリ
ング等の方法により成膜する。金属薄膜は発熱抵抗体１
２，１３を形成するためのもので、酸化に安定な白金等
の金属が使用される。その後、フォトリソグラフィ，異
方性エッチングなどにより、凹形状の参照用室１４と、
凹部上に架橋した薄膜絶縁体１１上に発熱抵抗体１２を
形成する。これと同時に、前記参照用室１４と同一凹形
状の検出用室１５と、凹部上に架橋した薄膜絶縁体１１
上に発熱抵抗体１２と同一抵抗の発熱抵抗体１３を形成
する。The substrate 10 shown is a flat plate of silicon (Si) having a (100) crystal plane, and a thin-film insulator 1 of SiO 2 is formed on the upper surface.
Then, a metal thin film is formed by a method such as evaporation, CVD, or sputtering. Metal thin film is heating resistor 1
Metals such as platinum, which are stable for oxidation, are used to form 2,13. Thereafter, a concave reference chamber 14 is formed by photolithography, anisotropic etching, or the like.
The heating resistor 12 is formed on the thin film insulator 11 cross-linked on the recess. At the same time, the detection chamber 15 having the same concave shape as the reference chamber 14 and the thin film insulator 11 bridged on the concave
A heating resistor 13 having the same resistance as the heating resistor 12 is formed thereon.
【００１６】検出用室１５には、凹部の壁面に凹部底面
より基板１０の上部面に延びる通気孔溝１６が設けられ
ている。該通気孔溝１６は、前記凹形状を異方性エッチ
ングするとき、同時に形成される。通気孔溝１６の側壁
面を（１１１）面に選べば凹部形状の面に平行した同一
深さの同一矩形断面の通気孔溝１６が形成される。The detection chamber 15 is provided with a vent groove 16 extending from the bottom surface of the concave portion to the upper surface of the substrate 10 on the wall surface of the concave portion. The vent holes 16 are formed simultaneously when the concave shape is anisotropically etched. If the side wall surface of the ventilation hole groove 16 is selected as the (111) plane, the ventilation hole groove 16 having the same depth and the same rectangular cross section is formed in parallel with the concave surface.
【００１７】次に、参照用室１４上部には凹部をもった
カバー１７が基板１０上に薄膜絶縁体１１を介して覆被
固着され、同様に検出用室１５の上部にもカバー１７と
同一形状のカバー１８が基板１０上に覆被固着される。
このとき、検出用室１５のカバー１７は通気孔溝１６の
一部を開口１６ａして低融点ガラス等で固着される。固
着面のガラス層は通気孔溝１６の軸方向に厚さをもって
いるので、ガラス層の厚さに多小のバラツキがあっても
開口１６ａの面積は変らない。通気孔溝１６を検出用室
１５内周の対称位置に均等に設けておけば、溝の深さが
一定に加工されているので、カバー１７の固着位置が多
少ずれても開口１６ａの総和の面積は一定となる。Next, a cover 17 having a concave portion is fixed on the upper part of the reference chamber 14 on the substrate 10 with the thin film insulator 11 interposed therebetween. A cover 18 having a shape is covered and fixed on the substrate 10.
At this time, the cover 17 of the detection chamber 15 is fixed with low-melting glass or the like through an opening 16a of a part of the vent groove 16. Since the glass layer on the fixing surface has a thickness in the axial direction of the ventilation hole groove 16, the area of the opening 16a does not change even if the thickness of the glass layer varies slightly. If the ventilation holes 16 are provided evenly at symmetrical positions on the inner circumference of the detection chamber 15, the depth of the grooves is processed to be constant, so that even if the fixing position of the cover 17 is slightly shifted, the sum of the openings 16a is reduced. The area is constant.
【００１８】図２は、検出用室１５の詳細な平面図で、
図中、１９は発熱部薄膜絶縁体、２０，２１は架橋支持
部で、図中、図１と同じ作用をする部分には、図１と同
一の参照番号を付している。FIG. 2 is a detailed plan view of the detection chamber 15.
In the figure, reference numeral 19 denotes a heat generating portion thin film insulator, and reference numerals 20 and 21 denote bridge supporting portions. In the figure, portions having the same functions as those in FIG. 1 are denoted by the same reference numerals as those in FIG.
【００１９】基板１０には凹部の検出用室１５と通気孔
溝１６とが形成されるが、薄膜絶縁体１１は、検出用室
１５の上部に略々正方形の発熱部薄膜絶縁体１９と、該
発熱部薄膜絶縁体１９を検出用室１５の外周面に架橋支
持する架橋支持部２０，２１の部分が残される。この架
橋支持部２０，２１の幅は、発熱部薄膜絶縁体１９の一
辺よりも狭少である。一方、発熱部薄膜絶縁体１９上に
はこれより僅かに小さい面積に発熱抵抗体１３が形成さ
れ、対向した架橋支持部２１上のリード部１３ｂと基板
１０上のパッド部１３ａとに接続される。A detection chamber 15 having a concave portion and a vent groove 16 are formed in the substrate 10. A thin-film insulator 11 is provided above the detection chamber 15. The portions of the bridging support portions 20 and 21 for bridging and supporting the heat generating portion thin film insulator 19 on the outer peripheral surface of the detection chamber 15 are left. The width of the bridge supporting portions 20 and 21 is smaller than one side of the heat generating portion thin film insulator 19. On the other hand, the heating resistor 13 is formed in a slightly smaller area on the heating portion thin film insulator 19, and is connected to the lead portion 13 b on the bridge supporting portion 21 and the pad portion 13 a on the substrate 10 facing each other. .
【００２０】発熱抵抗体１３は、例えばジグザグ状に連
続した細い抵抗線を形成するので、抵抗値を大きくする
ことができ、高感度にすることができる。また、発熱抵
抗体１３は架橋支持部２１の長さだけ基板１０より離間
しているので、発熱抵抗体１３を加熱しても基板１０へ
の熱伝達が小さく、発熱抵抗体１３の全面に亘って均一
に加熱され、一定の発熱分布となる。この結果、図３に
示した従来の検出用室１５の上部対称軸に直線状に配設
された発熱抵抗体３と比べると、高感度で安定した雰囲
気ガスを高精度で計測できる。Since the heating resistor 13 forms a thin continuous resistance wire, for example, in a zigzag shape, the resistance value can be increased and the sensitivity can be increased. Further, since the heating resistor 13 is separated from the substrate 10 by the length of the bridge supporting portion 21, even if the heating resistor 13 is heated, heat transfer to the substrate 10 is small, and the heating resistor 13 extends over the entire surface of the heating resistor 13. And uniform heating, resulting in a constant heat generation distribution. As a result, compared with the conventional heating resistor 3 linearly arranged on the upper symmetry axis of the detection chamber 15 shown in FIG. 3, a highly sensitive and stable atmosphere gas can be measured with high accuracy.
【００２１】[0021]
【効果】以上の説明から明らかなように、本発明によれ
ば、（１）検出用室の通気孔を、該検出用室の凹部を形
成するために、シリコン基板を異方エッチングすると同
時に加工することができるので加工工数も少なく、しか
も通気孔の開口面積の精度も高くできるので、品質の揃
った雰囲気センサを安価に製造することができる。
（２）発熱抵抗体を基板より離間して架橋される発熱部
薄膜絶縁体上に設けたので熱干渉が小さく、均一な温度
分布をもった高感度の雰囲気センサを提供することがで
きる。As is clear from the above description, according to the present invention, (1) the ventilation holes of the detection chamber are processed simultaneously with the anisotropic etching of the silicon substrate in order to form the recesses of the detection chamber. Therefore, the number of processing steps can be reduced, and the accuracy of the opening area of the ventilation hole can be increased, so that an atmosphere sensor with uniform quality can be manufactured at low cost.
(2) Since the heat-generating resistor is provided on the heat-generating portion thin film insulator which is bridged away from the substrate, it is possible to provide a highly sensitive atmosphere sensor having small heat interference and a uniform temperature distribution.
【図１】 本発明における雰囲気センサを説明するため
の図である。FIG. 1 is a diagram for explaining an atmosphere sensor according to the present invention.
【図２】 検出用室１５の詳細な平面図である。FIG. 2 is a detailed plan view of a detection chamber 15;
【図３】 従来の絶対湿度センサの一例を示す平面図及
び断面図である。FIG. 3 is a plan view and a sectional view showing an example of a conventional absolute humidity sensor.
【図４】 従来の検出側の空間の他の通気孔を示す図で
ある。FIG. 4 is a diagram showing another ventilation hole in a conventional detection-side space.
１０…基板、１１…薄膜絶縁体、１２，１３…発熱抵抗
体、１４…参照用室、１５…検出用室、１６…通気孔
溝、１６ａ…開口、１７，１８…カバー。DESCRIPTION OF SYMBOLS 10 ... board | substrate, 11 ... thin film insulator, 12 and 13 ... heating resistor, 14 ... reference chamber, 15 ... detection chamber, 16 ... vent groove | channel, 16a ... opening, 17, 18 ... cover.
Claims (2)
々の凹部上に架橋支持される薄膜絶縁体と、各々の薄膜
絶縁体上に形成された抵抗の等しい発熱抵抗体と、前記
凹部を覆被するカバーとからなり、一方の凹部を密閉し
て参照用室とし、他方の凹部を外気に導通する検出用室
として、前記参照用室と検出用室との前記発熱抵抗体の
放熱量の差に基づいて雰囲気を検知する雰囲気センサに
おいて、前記検出用室の凹部から外気への導通を基板凹
部底面から表面に到る通気孔溝を介して行い、該通気孔
溝を基板凹部壁面に形成し、カバー外部に開口したこと
を特徴とする雰囲気センサ。1. A substrate having two concave portions, a thin-film insulator bridge-supported on each concave portion of the substrate, a heating resistor formed on each thin-film insulator and having the same resistance, and the concave portion One of the recesses is hermetically sealed as a reference chamber, and the other of the recesses is a detection chamber that communicates with the outside air. In an atmosphere sensor for detecting an atmosphere based on a difference in calorific value, conduction from the concave portion of the detection chamber to the outside air is performed through a vent groove extending from the bottom surface of the substrate concave portion to the surface, and the vent groove is formed on the wall surface of the substrate concave portion. An atmosphere sensor which is formed on the outside and is opened outside the cover.
用室上で架橋される架橋支持部の幅よりも大きい辺を有
する正方形状の発熱部薄膜絶縁体上に設けたことを特徴
とする請求項１記載の雰囲気センサ。Wherein said heat generating resistor and the reference chamber and you Yes <br/> larger side than the width of the cross support portion which is crosslinked on the detection chamber positive square-shaped heating portion thin film insulating body on 2. The atmosphere sensor according to claim 1, wherein the atmosphere sensor is provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04020459A JP3083901B2 (en) | 1992-01-08 | 1992-01-08 | Atmosphere sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04020459A JP3083901B2 (en) | 1992-01-08 | 1992-01-08 | Atmosphere sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0688802A JPH0688802A (en) | 1994-03-29 |
| JP3083901B2 true JP3083901B2 (en) | 2000-09-04 |
Family
ID=12027666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP04020459A Expired - Fee Related JP3083901B2 (en) | 1992-01-08 | 1992-01-08 | Atmosphere sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3083901B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014041164A (en) * | 2013-12-05 | 2014-03-06 | New Cosmos Electric Corp | Gas detection element |
| CN110494743A (en) * | 2017-04-11 | 2019-11-22 | 应美盛公司 | Gas sensing method and device |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009168649A (en) * | 2008-01-17 | 2009-07-30 | Ishizuka Electronics Corp | Indirect heat type heat-sensitive resistance element, and absolute humidity sensor using the indirect heat type heat-sensitivie resistance element |
| JP5100733B2 (en) * | 2009-10-05 | 2012-12-19 | 北陸電気工業株式会社 | Gas sensor element and manufacturing method thereof |
| JP5152271B2 (en) * | 2010-08-06 | 2013-02-27 | 株式会社豊田中央研究所 | Thin film membrane structure and semiconductor thin film gas sensor |
| JP5136868B2 (en) * | 2010-08-18 | 2013-02-06 | 横河電機株式会社 | Thermal conductivity detector and gas chromatograph using the same |
| JP6340967B2 (en) * | 2014-07-11 | 2018-06-13 | Tdk株式会社 | Gas sensor |
-
1992
- 1992-01-08 JP JP04020459A patent/JP3083901B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014041164A (en) * | 2013-12-05 | 2014-03-06 | New Cosmos Electric Corp | Gas detection element |
| CN110494743A (en) * | 2017-04-11 | 2019-11-22 | 应美盛公司 | Gas sensing method and device |
| US10598621B2 (en) * | 2017-04-11 | 2020-03-24 | Invensense, Inc. | Gas sensing device with chemical and thermal conductivity sensing |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0688802A (en) | 1994-03-29 |
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