JP3124609B2 - Atmosphere sensor structure - Google Patents
Atmosphere sensor structureInfo
- Publication number
- JP3124609B2 JP3124609B2 JP04020458A JP2045892A JP3124609B2 JP 3124609 B2 JP3124609 B2 JP 3124609B2 JP 04020458 A JP04020458 A JP 04020458A JP 2045892 A JP2045892 A JP 2045892A JP 3124609 B2 JP3124609 B2 JP 3124609B2
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- JP
- Japan
- Prior art keywords
- heating resistor
- film insulator
- thin film
- atmosphere
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
【０００１】[0001]
【技術分野】本発明は、雰囲気センサの構造、より詳細
には、温度センサ、湿度センサ、ガスセンサ、フローセ
ンサ等として使用可能な雰囲気センサの構造に関する。TECHNICAL FIELD The present invention relates to a structure of an atmosphere sensor, and more particularly, to a structure of an atmosphere sensor usable as a temperature sensor, a humidity sensor, a gas sensor, a flow sensor, and the like.
【０００２】[0002]
【従来技術】従来、ガスセンサとして、金属酸化物半導
体の内部に電極と、電極を兼ねたヒータを内蔵し、該金
属酸化物半導体をヒータにより加熱した時に該金属酸化
物半導体の抵抗値が該金属酸化物半導体の表面でのガス
吸着によって下がることを利用したものが提案されてい
るが、消費電力が大きく、乾電池駆動には適さないとい
う問題があった。この点を改良すべく、架橋構造や片持
梁構造等、空気中に張り出させた張り出し部を設け、こ
の張り出し部の上に金属酸化物半導体を形成するように
し、もって、熱容量を可及的に小さくして応答特性を上
げ、且つ消費電力を低下させる試みが成されている。2. Description of the Related Art Conventionally, as a gas sensor, an electrode and a heater serving also as an electrode are built in a metal oxide semiconductor, and when the metal oxide semiconductor is heated by the heater, the resistance value of the metal oxide semiconductor becomes higher than that of the metal oxide semiconductor. Although an oxide semiconductor utilizing the effect of gas adsorption on the surface of the oxide semiconductor has been proposed, there is a problem that power consumption is large and the oxide semiconductor is not suitable for driving a dry battery. In order to improve this point, an overhanging portion, such as a bridge structure or a cantilever structure, that overhangs in the air is provided, and a metal oxide semiconductor is formed on the overhanging portion, thereby increasing the heat capacity. Attempts have been made to improve the response characteristics by reducing the power consumption and to reduce the power consumption.
【０００３】一方、ガスセンサにおいては、同様の構造
をもつ検出器を２個設け、一方の検出器を周囲雰囲気に
接触させてガス検出用として用い、他方の検出器を周囲
雰囲気に接触させない密封構造とし、この密封構造の検
出器にて周囲の温度を検出して温度補償をすることが行
なわれている。On the other hand, in a gas sensor, two detectors having the same structure are provided, and one of the detectors is used for gas detection by being brought into contact with the surrounding atmosphere, and the other is not sealed with the surrounding atmosphere. The ambient temperature is detected by the detector having the sealed structure to compensate for the temperature.
【０００４】図５（ａ）,（ｂ）は、特開平３−９２７
５４号公報に開示された絶対湿度センサの一例を示す平
面図及び断面図で、図示のように、第１のシリコンから
なる基板１に、薄膜抵抗発熱体３を設置する凹部６，７
を形成し、基板１の表面に絶縁保護膜を形成した上、薄
膜抵抗発熱体３を前記凹部に架橋支持するよう設置して
いる。FIGS. 5A and 5B are Japanese Unexamined Patent Publication No. 3-927.
54 is a plan view and a cross-sectional view showing an example of an absolute humidity sensor disclosed in Japanese Patent Application Publication No. 54-54, as shown in the drawings.
Is formed, an insulating protective film is formed on the surface of the substrate 1, and the thin-film resistance heating element 3 is installed so as to be bridged and supported in the concave portion.
【０００５】上記の構成により、熱容量を小さくした薄
膜発熱体３の熱が直接基板に熱伝導するのを抑えて、基
板で構成した空間の気体の熱伝導により熱平衝を保ち、
小電力化と応答の高速化を図ることができるようにして
いる。[0005] With the above configuration, the heat of the thin film heating element 3 having a reduced heat capacity is suppressed from directly conducting heat to the substrate, and the thermal balance of the gas in the space formed by the substrate is maintained.
The power consumption and the response speed can be reduced.
【０００６】また、第２の基板２にも基板１に対応する
位置に前記素子用の空間を作るための凹部６，７と、薄
膜発熱体３のパッド部９を露出させるための切欠き部を
形成しておき、更に基板２に接合用の低融点ガラスペー
スト５を図に斜線で示すパターンにスクリーン印刷した
上、前記ペースト中の溶剤を仮焼成で蒸発させ、続いて
参照素子の空間に封入する乾燥空気又は一定の既知の湿
度の空気雰囲気中で、基板の１と２を対向させ、図示の
ようにそれぞれの凹部で薄膜発熱体を囲む空間を作る配
置にした上、加熱で低融点ガラスを融解して基板を接合
させている。The second substrate 2 also has recesses 6 and 7 for creating spaces for the elements at positions corresponding to the substrate 1, and notches for exposing the pad portions 9 of the thin film heating element 3. Is formed, and a low-melting glass paste 5 for bonding is screen-printed on the substrate 2 in a pattern shown by diagonal lines in the figure, and the solvent in the paste is evaporated by pre-baking, and then the space is formed in the space of the reference element. In a dry air to be enclosed or in an air atmosphere of a certain known humidity, the substrates 1 and 2 are opposed to each other, and arranged so as to create a space surrounding the thin film heating element in each concave portion as shown in FIG. The substrate is bonded by melting the glass.
【０００７】以上の接合により、参照側の空間６は外気
と遮断され常に一定の雰囲気に保たれる。この気密封止
される雰囲気は必ずしも大気圧でなくてもよい。このと
き同時に形成される検出側の空間７は対向する位置に接
合部の隙間で形成した通気孔８が構成される。[0007] By the above-mentioned joining, the reference space 6 is cut off from the outside air, and is always kept in a constant atmosphere. The atmosphere to be hermetically sealed does not necessarily have to be atmospheric pressure. At this time, the space 7 on the detection side, which is formed at the same time, has a ventilation hole 8 formed at a position opposed to the space 7 at the joint.
【０００８】以上のように構成にした湿度センサは、２
つの薄膜発熱体に電力によって一定のエネルギーを供給
して自己加熱させると、それぞれ参照用空間６と検出用
空間７の水蒸気量、即ち、絶対湿度に対応する空間の熱
伝導度によって放熱し、一定の温度になって、それぞれ
一定の抵抗値をもつので、その差をブリッジ回路の非平
衝電位の出力として検出して絶対湿度を計測することが
できる。The humidity sensor constructed as described above has two
When constant energy is supplied to the two thin film heating elements by electric power and self-heated, heat is radiated by the heat conductivity of the space corresponding to the amount of water vapor in the reference space 6 and the detection space 7, that is, the space corresponding to the absolute humidity. , Each having a certain resistance value, the difference can be detected as the output of the non-equilibrium potential of the bridge circuit to measure the absolute humidity.
【０００９】以上に、基板に形成した凹部の上に薄膜絶
縁体を架橋し、その上に発熱抵抗体を配設してガスを検
出したり、湿度を検出したりする例について説明した
が、同様にして架橋された薄膜絶縁体の上に配設された
発熱抵抗体の熱放射に伴う該発熱抵抗体の抵抗値の変化
から、気体の流速（流量）を計測するフローセンサ、周
囲温度を検出する温度センサ等についても種々提案され
ている。In the above, an example has been described in which a thin film insulator is cross-linked on a concave portion formed in a substrate, and a heating resistor is disposed thereon to detect gas or humidity. Similarly, a flow sensor for measuring a gas flow rate (flow rate) from a change in resistance value of the heating resistor accompanying heat radiation of the heating resistor disposed on the crosslinked thin-film insulator, Various temperature sensors and the like for detection have been proposed.
【００１０】斯様に、基板に形成された凹部上に薄膜絶
縁体を架橋し、その上に発熱抵抗体を配設し、該発熱体
の抵抗値の変化を利用して周囲雰囲気の状態を検出する
ようにしたセンサは既に種々提案されているが、これら
の発熱抵抗体の形状は、短冊形状の長手方向に平行した
ジグザク状をしており、加熱時、架橋支持部から基板へ
の伝熱を防いでいるとはいえ完全なものではなく発熱抵
抗体の温度は架橋部で低く中央部で高くなるという不均
一な温度分布となった。しかも、放熱量を補うため加熱
電力は大きく局部的に発熱し易いという問題があった。
また、結果的に加熱有効面積が小さいので感度も低かっ
た。In this manner, a thin-film insulator is cross-linked on the concave portion formed on the substrate, and a heating resistor is disposed thereon, and the change in the resistance value of the heating element is used to change the state of the surrounding atmosphere. Various sensors have already been proposed to detect the heat.However, these heating resistors have a zigzag shape parallel to the longitudinal direction of the strip, and when heated, transfer from the bridge supporting portion to the substrate occurs. Although the heat was prevented, the temperature was not perfect, and the temperature of the heating resistor was low at the bridge portion and high at the center, resulting in an uneven temperature distribution. In addition, there is a problem that heating power is large to easily compensate for the amount of heat radiation, and heat is easily generated locally.
Further, as a result, the sensitivity was low because the effective heating area was small.
【００１１】[0011]
【目的】本発明は、上述のごとき実情に鑑みてなされた
もので、発熱抵抗体を小さい電力で加熱しても発熱抵抗
体の温度分布が均一となり、高感度で検出できる雰囲気
センサの構造を提供することを目的としてなされたもの
である。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has a structure of an atmosphere sensor capable of detecting a heating resistor with a high sensitivity even if the heating resistor is heated with a small electric power. It was made for the purpose of providing.
【００１２】[0012]
【構成】本発明は、上記目的を達成するために、四辺形
に形成された凹部を有する基板と、該凹部の対向する辺
間に架橋された架橋支持部を有する薄膜絶縁体と、前記
架橋支持部上に設けられたリード部と接続されて通電さ
れるように前記薄膜絶縁体上に形成された発熱抵抗体と
を有し、前記発熱抵抗体を加熱したときの放熱量の変化
から周囲雰囲気を検知する雰囲気センサにおいて、前記
薄膜絶縁体の形状を正方形又は円形とし、前記架橋支持
部が架橋された前記凹部の対向する辺に隣接する辺の一
方又は両方に架橋する安定用架橋支持部を有することを
特徴とするものである。以下、本発明の実施例に基づい
て説明する。[Configuration] The present invention, in order to achieve the above object, based on the plate that have a recess formed in a quadrilateral, the thin film that have a cross-linked support part bridge between opposite sides of the recess The insulator is connected to a lead portion provided on the bridge
A heating resistor formed on the thin film insulator so as to detect the surrounding atmosphere from a change in the amount of heat released when the heating resistor is heated. It is a square or a circle, and has a cross-linking support portion for stabilization that cross-links one or both sides adjacent to the opposite side of the cross-linked concave portion. Hereinafter, a description will be given based on examples of the present invention.
【００１３】図１（ａ）,（ｂ）は、本発明が適用され
る雰囲気センサの構造の一例を説明するための図で、
（ａ）図は平面図、（ｂ）図は（ａ）図のｂ−ｂ線断面
図で、図中、１０は基板、１１は凹部、１２は薄膜絶縁
体、１３は発熱抵抗体である。[0013] Figure 1 (a), (b), the present invention is applied
A diagram for explaining an example of the structure of that atmosphere sensor,
(A) is a plan view, (b) is a sectional view taken along the line bb of (a), in which 10 is a substrate, 11 is a recess, 12 is a thin film insulator, and 13 is a heating resistor. .
【００１４】図示の基板１０は、異方性エッチングによ
り凹部１１を形成させるため、本実施例ではＳi（シリ
コン）を用いている。基板１０は、Ｓi（１００）の角
形形状で、上面にＳiＯ2の薄膜絶縁体１２を形成後、薄
膜絶縁体１２上に蒸着、ＣＶＤ、スパッタリングなどの
方法により発熱抵抗体１３を形成するためのＰｔ（白
金）等の酸化に安定な金属の成膜を施す。次にフォトリ
ソグラフィ、異方性エッチングなどにより凹部１１の上
部に、薄膜絶縁体１２を架橋支持し、該薄膜絶縁体１２
上に前記金属成膜する発熱抵抗体１３を形成する。この
発熱抵抗体１３には、基板１０上に形成された通電のた
めのパッド部１３ａと、架橋部１２ａ上に設けられたリ
ード部１３ｂとが接続される。The substrate 10 shown in FIG. 1 uses Si (silicon) in this embodiment to form the recess 11 by anisotropic etching. The substrate 10 has a rectangular shape of Si (100). After forming the SiO 2 thin film insulator 12 on the upper surface, the heating resistor 13 is formed on the thin film insulator 12 by a method such as vapor deposition, CVD, or sputtering. A film of a metal stable to oxidation such as Pt (platinum) is formed. Next, the thin film insulator 12 is cross-linked and supported on the concave portion 11 by photolithography, anisotropic etching, or the like.
The heating resistor 13 on which the metal film is formed is formed thereon. The heating resistor 13 is connected to a pad portion 13a for current supply formed on the substrate 10 and a lead portion 13b provided on the bridge portion 12a.
【００１５】薄膜絶縁体１２は、発熱抵抗体１３と同形
で発熱抵抗体１３よりも僅かに大きい略々正方形で、該
正方形の対角線上で基板１２と架橋部１２ａで支持され
ている。架橋部１２ａは、幅が薄膜絶縁体１２の辺の長
さよりも小さく、発熱抵抗体１３とのリード部１３ｂが
形成されている。発熱抵抗体１３はリード部１３ｂより
も狭少な幅の連続した線状、例えば、ジグザグ状に発熱
抵抗体１３で示した全面積に亘って形成しているため大
きい抵抗値が得られ、リード部１３ａにより基板１０と
は離間した位置となる。The thin-film insulator 12 has the same shape as the heat-generating resistor 13 and is substantially square, slightly larger than the heat-generating resistor 13. The thin-film insulator 12 is supported by the substrate 12 and the bridge 12a on a diagonal line of the square. The width of the bridge portion 12a is smaller than the length of the side of the thin-film insulator 12, and a lead portion 13b with the heating resistor 13 is formed. Since the heating resistor 13 is formed in a continuous linear shape having a width smaller than that of the lead portion 13b, for example, in a zigzag shape over the entire area indicated by the heating resistor 13, a large resistance value is obtained. The position 13a is separated from the substrate 10 by 13a.
【００１６】図示において、薄膜絶縁体１２及び発熱抵
抗体１３は、凹部１１上に正方形の対角線上で架橋支持
されているが、正方形の対角線上でなく、対向する辺で
架橋支持してもよい。図２は、本発明が適用される雰囲
気センサの構造の他の例を説明するための図で、図中、
１６は薄膜絶縁体、１７は発熱抵抗体で、図１と同じ作
用する部分には図１と同一の参照番号を付している。In the drawing, the thin film insulator 12 and the heat generating resistor 13 are bridged and supported on the concave portion 11 on a square diagonal line, but may be bridged and supported not on the square diagonal line but on opposite sides. . Figure 2 is a diagram for explaining another example of the structure of the Ambient atmosphere <br/> gas sensor to which the present invention is applied, in the figure,
Reference numeral 16 denotes a thin-film insulator, and reference numeral 17 denotes a heat-generating resistor. Portions that operate in the same manner as in FIG.
【００１７】図示において、薄膜絶縁体１６は、凹部１
１上部において凹部１１の辺に平行な辺を有する略々正
方形であり、基板１０とは正方形の辺中央で架橋部１６
ａにより支持架橋されている。該薄膜絶縁体１６上に
は、略同形の面上に発熱抵抗体１７が連続した線状に形
成されてパッド部１７ａとリード部１７ｂにより接続さ
れている。In the figure, the thin film insulator 16 is
The upper portion 1 is substantially a square having a side parallel to the side of the concave portion 11, and has a bridge portion 16 at the center of the side of the square with the substrate 10.
a is supported and crosslinked. On the thin film insulator 16, a heating resistor 17 is formed in a continuous linear shape on a substantially same surface, and is connected by a pad portion 17a and a lead portion 17b.
【００１８】図３は、本発明が適用される雰囲気センサ
の構造の更に他の例を説明するための図で、図中、１８
は薄膜絶縁体、１９は発熱抵抗体で、図１と同じ作用す
る部分には図１と同一の参照番号を付している。[0018] FIG. 3 is a diagram for explaining still another example of the structure of the atmosphere sensor to which the present invention is applied, in the figure, 18
Is a thin-film insulator, and 19 is a heating resistor, and the portions that operate in the same way as in FIG. 1 are given the same reference numerals as in FIG.
【００１９】図示において、薄膜絶縁体１８の形状は凹
部１１上において凹部１１の辺よりも僅かに小さい直径
の円形であり、基板１０とは直径上に設けられた基板１
０の半径よりも狭少な架橋支持部１８ａにより両持支持
されている。該薄膜絶縁体１８上には僅かに小さい径を
もつ円部内に発熱抵抗体１９が形成され、パッド部１９
ａとリード部１９ｂにより接続されている。発熱抵抗体
１９は両架橋支持部１８ａ上のリード部１９ｂの間にリ
ード部１９ｂよりも細い線状の連続した渦巻状又はジグ
ザグ状のパターンで抵抗を形成している。In the drawing, the shape of the thin film insulator 18 is a circle having a diameter slightly smaller than the side of the recess 11 on the recess 11, and the substrate 1 provided on the diameter is different from the substrate 10.
It is supported at both ends by a bridge supporting portion 18a smaller than the radius of zero. On the thin film insulator 18, a heating resistor 19 is formed in a circle having a slightly smaller diameter, and a pad 19 is formed.
a and the lead 19b. The heating resistor 19 forms a resistor between the lead portions 19b on the two bridge supporting portions 18a in a continuous spiral or zigzag pattern having a thinner linear shape than the lead portion 19b.
【００２０】図４は、本発明における雰囲気センサの構
造の一実施例を説明するための図で、図中、１２ｂは薄
膜絶縁体の架橋支持部であり、図１乃至図３と同じ作用
する部分には図１と同一の参照番号を付している。[0020] FIG. 4 is a diagram for explaining the Kazumi施例structure of the atmosphere sensor of the present invention, in the figure, 12b is a bridging support portion of the thin film insulating body, the same effect as in FIG. 1 to FIG. 3 1 are given the same reference numerals as in FIG.
【００２１】図示の雰囲気センサの構造は、凹部１１上
の薄膜絶縁体の形状が、図１と同じ略正方形であり、基
板１０とは一対の対角線上の架橋支持部１２ａ、１２ａ
で支持されているが、更に他の対角線上の架橋支持部１
２ｂ、１２ｂでも支持され計４ケ所で支持されているの
で、一対の対角線上でのみ支持する場合と比べて軸廻り
の回転力を除去することができて、気体の流れが増加し
た場合でも安定な姿勢を保つことができる。図示におい
ては、４点支持としたが、３点でもよく、更に多点の支
持でも同様に安定度を保つことができる。この多点支持
方式は、薄膜絶縁体および発熱抵抗体の形状が、図２に
図示した正方形の辺で支持する場合や、図３に図示した
円形径上での支持の場合でも同様の効果を有するもので
ある。In the structure of the atmosphere sensor shown in the figure, the shape of the thin film insulator on the concave portion 11 is substantially the same as that of FIG. 1, and the substrate 10 is a pair of diagonally cross-linked supporting portions 12a, 12a.
, But still another diagonal bridge support 1
It is supported by 2b and 12b and is supported at a total of four places, so it is possible to remove the rotational force around the axis compared to the case where it is supported only on a pair of diagonal lines, and it is stable even when the gas flow increases. Posture can be maintained. In the drawing, four points are supported, but three points may be used, and the stability can be similarly maintained by supporting multiple points. This multi-point support method has the same effect even when the shape of the thin-film insulator and the heating resistor is supported by the square sides shown in FIG. Have
【００２２】[0022]
【効果】以上の説明から明らかなように、本発明による
と、以下のような効果がある。 （１）四辺形に形成された凹部を有する基板と、該凹部
の対向する辺間に架橋された架橋支持部を有する薄膜絶
縁体と、前記架橋支持部上に設けられたリード部と接続
されて通電されるように前記薄膜絶縁体上に形成された
発熱抵抗体とを有し、前記発熱抵抗体を加熱したときの
放熱量の変化から周囲雰囲気を検知する雰囲気センサに
おいて、前記薄膜絶縁体の形状を正方形又は円形とし、
前記架橋支持部が架橋された前記凹部の対向する辺に隣
接する辺の一方又は両方に架橋する安定用架橋支持部を
有することを特徴としたもので、特に架橋支持部を凹部
の３辺又は４辺に架橋するように設けたので、薄膜絶縁
体が軸廻りに回転するようなことがなくなり、気体の流
れが増加した場合でも、安定した姿勢を保つことができ
る。As apparent from the above description, the present invention has the following effects. (1) group and the plates that have a recess formed in the quadrilateral, and the thin-film insulator that having a cross-linked support part bridge between opposite sides of the recess, is provided on the bridge supporting portion Connected to lead
A heating resistor formed on the thin-film insulator so as to be energized, and detecting an ambient atmosphere from a change in a heat radiation amount when the heating resistor is heated. The shape of the body is square or circular,
The cross-linking support portion has a stabilizing cross-linking support portion that cross-links one or both sides adjacent to the opposite side of the cross-linked concave portion. Since it is provided so as to bridge the four sides, the thin film insulator does not rotate around the axis, and a stable posture can be maintained even when the gas flow increases.
【図１】 本発明が適用される雰囲気センサの構造の一
例を説明するための図である。 One structure of the atmosphere sensor [1] The present invention is applied
It is a figure for explaining an example .
【図２】 本発明が適用される雰囲気センサの構造の他
の例を説明するための図である。Other structure of the atmosphere sensor [2] The present invention is applied
It is a figure for explaining the example of.
【図３】 本発明が適用される雰囲気センサの構造の更
に他の例を説明するための図である。It is a diagram for describing yet another example of the structure of the atmosphere sensor [3] The present invention is applied.
【図４】 本発明における雰囲気センサの構造の実施例
を説明するための図である。It is a diagram for explaining the actual施例structure of the atmosphere sensor in the present invention; FIG.
【図５】 従来の絶対湿度センサの一例を示す平面図及
び断面図である。FIG. 5 is a plan view and a sectional view showing an example of a conventional absolute humidity sensor.
１０…基板、１１…凹部、１２…薄膜絶縁体、１３…発
熱抵抗体。10: substrate, 11: recess, 12: thin-film insulator, 13: heating resistor.
フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) G01N 27/00 - 27/24 G01F 1/68 - 1/699 Continuation of the front page (58) Field surveyed (Int.Cl. 7 , DB name) G01N 27/00-27/24 G01F 1/68-1/699
Claims (1)
と、該凹部の対向する辺間に架橋された架橋支持部を有
する薄膜絶縁体と、前記架橋支持部上に設けられたリー
ド部と接続されて通電されるように前記薄膜絶縁体上に
形成された発熱抵抗体とを有し、前記発熱抵抗体を加熱
したときの放熱量の変化から周囲雰囲気を検知する雰囲
気センサにおいて、前記薄膜絶縁体の形状を正方形又は
円形とし、前記架橋支持部が架橋された前記凹部の対向
する辺に隣接する辺の一方又は両方に架橋する安定用架
橋支持部を有することを特徴とする雰囲気センサの構
造。And 1. A group that having a recess formed in quadrilateral plate, a thin film insulator you Yes <br/> the crosslinked supporting portion bridge between opposite sides of the recess, the cross-linking Lee provided on the support
And a heating resistor formed on the thin-film insulator so as to be electrically connected to the heating section, and detecting an ambient atmosphere from a change in a heat radiation amount when the heating resistor is heated. The thin film insulator has a square or circular shape, and the bridging support has a stabilizing bridge support that bridges to one or both sides adjacent to the opposite side of the bridged recess. Atmosphere sensor structure characterized by the above-mentioned.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04020458A JP3124609B2 (en) | 1992-01-08 | 1992-01-08 | Atmosphere sensor structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04020458A JP3124609B2 (en) | 1992-01-08 | 1992-01-08 | Atmosphere sensor structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06102227A JPH06102227A (en) | 1994-04-15 |
| JP3124609B2 true JP3124609B2 (en) | 2001-01-15 |
Family
ID=12027638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP04020458A Expired - Fee Related JP3124609B2 (en) | 1992-01-08 | 1992-01-08 | Atmosphere sensor structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3124609B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103675038A (en) * | 2013-12-13 | 2014-03-26 | 苏州纳格光电科技有限公司 | Nanocrystalline metal oxide functionalized carbon nanotube material and formaldehyde gas sensor |
| US9746436B2 (en) | 2014-03-07 | 2017-08-29 | Ricoh Company, Ltd. | Detecting device, detecting circuit, sensor module and image forming device |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5144090B2 (en) * | 2007-02-26 | 2013-02-13 | シチズンホールディングス株式会社 | Catalytic combustion type gas sensor and manufacturing method of catalytic combustion type gas sensor |
| KR20090122083A (en) * | 2008-05-23 | 2009-11-26 | 삼성전자주식회사 | Microheater, microheater array, method for manufacturing the same and electronic device using the same |
-
1992
- 1992-01-08 JP JP04020458A patent/JP3124609B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103675038A (en) * | 2013-12-13 | 2014-03-26 | 苏州纳格光电科技有限公司 | Nanocrystalline metal oxide functionalized carbon nanotube material and formaldehyde gas sensor |
| US9746436B2 (en) | 2014-03-07 | 2017-08-29 | Ricoh Company, Ltd. | Detecting device, detecting circuit, sensor module and image forming device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06102227A (en) | 1994-04-15 |
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