JPH0586646B2 - - Google Patents

Info

Publication number: JPH0586646B2
Authority: JP; Japan
Prior art keywords: substrate; buffer layer; film; metal; inn
Prior art date: 1984-02-14
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP2444484A

Other languages

English (en)

Japanese (ja)

Other versions

JPS60173829A (ja

Inventor

Sakae Maebotoke

Morio Kobayashi

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Nippon Telegraph and Telephone Corp

Original Assignee

Nippon Telegraph and Telephone Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-02-14

Filing date

1984-02-14

Publication date

1993-12-13

1984-02-14 Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp

1984-02-14 Priority to JP59024444A priority Critical patent/JPS60173829A/ja

1985-09-07 Publication of JPS60173829A publication Critical patent/JPS60173829A/ja

1993-12-13 Publication of JPH0586646B2 publication Critical patent/JPH0586646B2/ja

Status Granted legal-status Critical Current

Links

239000000758 substrate Substances 0.000 claims description 48
239000010408 film Substances 0.000 claims description 41
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 23
229910052751 metal Inorganic materials 0.000 claims description 22
239000002184 metal Substances 0.000 claims description 22
238000000034 method Methods 0.000 claims description 17
229910052594 sapphire Inorganic materials 0.000 claims description 14
239000010980 sapphire Substances 0.000 claims description 14
238000004544 sputter deposition Methods 0.000 claims description 13
239000000203 mixture Substances 0.000 claims description 10
239000011521 glass Substances 0.000 claims description 9
239000010409 thin film Substances 0.000 claims description 9
239000007789 gas Substances 0.000 claims description 8
150000001875 compounds Chemical class 0.000 claims description 5
239000004065 semiconductor Substances 0.000 claims description 5
229910052782 aluminium Inorganic materials 0.000 claims description 4
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
229910052733 gallium Inorganic materials 0.000 claims description 3
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
229910052738 indium Inorganic materials 0.000 claims description 2
APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
150000004767 nitrides Chemical class 0.000 claims description 2
229910001873 dinitrogen Inorganic materials 0.000 claims 1
239000012808 vapor phase Substances 0.000 claims 1
229910052757 nitrogen Inorganic materials 0.000 description 11
238000000927 vapour-phase epitaxy Methods 0.000 description 10
239000012159 carrier gas Substances 0.000 description 7
XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 6
125000002524 organometallic group Chemical group 0.000 description 5
QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
238000005424 photoluminescence Methods 0.000 description 4
JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 3
MUJOIMFVNIBMKC-UHFFFAOYSA-N fludioxonil Chemical compound C=12OC(F)(F)OC2=CC=CC=1C1=CNC=C1C#N MUJOIMFVNIBMKC-UHFFFAOYSA-N 0.000 description 3
150000004820 halides Chemical class 0.000 description 3
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
238000001947 vapour-phase growth Methods 0.000 description 3
206010024769 Local reaction Diseases 0.000 description 2
230000005587 bubbling Effects 0.000 description 2
238000006243 chemical reaction Methods 0.000 description 2
239000011651 chromium Substances 0.000 description 2
239000010931 gold Substances 0.000 description 2
238000010438 heat treatment Methods 0.000 description 2
229910001220 stainless steel Inorganic materials 0.000 description 2
239000010935 stainless steel Substances 0.000 description 2
229920000049 Carbon (fiber) Polymers 0.000 description 1
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
229910021617 Indium monochloride Inorganic materials 0.000 description 1
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
229910021529 ammonia Inorganic materials 0.000 description 1
239000004917 carbon fiber Substances 0.000 description 1
229910052804 chromium Inorganic materials 0.000 description 1
230000000052 comparative effect Effects 0.000 description 1
238000010586 diagram Methods 0.000 description 1
239000002019 doping agent Substances 0.000 description 1
230000000694 effects Effects 0.000 description 1
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
229910052737 gold Inorganic materials 0.000 description 1
APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 1
230000006698 induction Effects 0.000 description 1
238000004020 luminiscence type Methods 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
150000002739 metals Chemical class 0.000 description 1
229910052750 molybdenum Inorganic materials 0.000 description 1
239000011733 molybdenum Substances 0.000 description 1
229910052759 nickel Inorganic materials 0.000 description 1
229910000069 nitrogen hydride Inorganic materials 0.000 description 1
239000012071 phase Substances 0.000 description 1
229910052697 platinum Inorganic materials 0.000 description 1
238000007740 vapor deposition Methods 0.000 description 1
229910052725 zinc Inorganic materials 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Physics & Mathematics (AREA)
Power Engineering (AREA)
Chemical & Material Sciences (AREA)
Materials Engineering (AREA)
Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Recrystallisation Techniques (AREA)
Led Devices (AREA)

JP59024444A 1984-02-14 1984-02-14 化合物半導体薄膜の成長方法 Granted JPS60173829A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP59024444A JPS60173829A (ja)	1984-02-14	1984-02-14	化合物半導体薄膜の成長方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP59024444A JPS60173829A (ja)	1984-02-14	1984-02-14	化合物半導体薄膜の成長方法

Publications (2)

Publication Number	Publication Date
JPS60173829A JPS60173829A (ja)	1985-09-07
JPH0586646B2 true JPH0586646B2 (de)	1993-12-13

Family

ID=12138309

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP59024444A Granted JPS60173829A (ja)	1984-02-14	1984-02-14	化合物半導体薄膜の成長方法

Country Status (1)

Country	Link
JP (1)	JPS60173829A (de)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH11163404A (ja) *	1997-11-25	1999-06-18	Toyoda Gosei Co Ltd	ＧａＮ系半導体
WO2007129773A1 (ja)	2006-05-10	2007-11-15	Showa Denko K.K.	Iii族窒化物化合物半導体積層構造体
WO2008020599A1 (en)	2006-08-18	2008-02-21	Showa Denko K.K.	Method for manufacturing group iii nitride compound semiconductor light-emitting device, group iii nitride compound semiconductor light-emitting device, and lamp
WO2008041499A1 (en)	2006-09-29	2008-04-10	Showa Denko K.K.	Filming method for iii-group nitride semiconductor laminated structure
WO2008075559A1 (ja)	2006-12-20	2008-06-26	Showa Denko K.K.	Ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
WO2009041256A1 (ja)	2007-09-27	2009-04-02	Showa Denko K.K.	Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
DE112007002182T5 (de)	2006-09-26	2009-07-09	Showa Denko K.K.	Gruppe-III-Nitridverbindungshalbleiter-Lichtemissionsvorrichtung, Verfahren zum Herstellen einer Gruppe-III-Nitridverbindungshalbleiter-Lichtemissionsvorrichtung, und Lampe
WO2009113458A1 (ja)	2008-03-13	2009-09-17	昭和電工株式会社	Ｉｉｉ族窒化物半導体素子及びその製造方法、ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
JP2009277882A (ja) *	2008-05-14	2009-11-26	Showa Denko Kk	Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子、並びにランプ
US8097482B2 (en)	2007-06-11	2012-01-17	Showa Denko K.K	Method for manufacturing group III nitride semiconductor, method for manufacturing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp
US8106419B2 (en)	2006-11-08	2012-01-31	Showa Denko K.K.	Group-III nitride compound semiconductor light-emitting device, method of manufacturing group-III nitride compound semiconductor light-emitting device, and lamp
US8198179B2 (en)	2007-02-21	2012-06-12	Showa Denko K.K.	Method for producing group III nitride semiconductor light-emitting device
US8557092B2 (en)	2006-10-20	2013-10-15	Toyoda Gosei Co., Ltd.	Sputtering deposition apparatus and backing plate for use in sputtering deposition apparatus
US8674398B2 (en)	2007-07-04	2014-03-18	Toyoda Gosei Co., Ltd.	Group III nitride semiconductor light emitting device and production method thereof, and lamp

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS63188938A (ja) *	1987-01-31	1988-08-04	Toyoda Gosei Co Ltd	窒化ガリウム系化合物半導体の気相成長方法
JP2631286B2 (ja) *	1987-01-31	1997-07-16	豊田合成株式会社	窒化ガリウム系化合物半導体の気相成長方法
JP2631285B2 (ja) *	1987-01-31	1997-07-16	豊田合成株式会社	窒化ガリウム系化合物半導体の気相成長方法
US6830992B1 (en)	1990-02-28	2004-12-14	Toyoda Gosei Co., Ltd.	Method for manufacturing a gallium nitride group compound semiconductor
JP2623466B2 (ja) *	1990-02-28	1997-06-25	豊田合成株式会社	窒化ガリウム系化合物半導体発光素子
DE69126152T2 (de)	1990-02-28	1997-11-13	Toyoda Gosei Kk	Lichtemittierende Halbleitervorrichtung mit Gallium-Nitrid-Verbindung
US6362017B1 (en)	1990-02-28	2002-03-26	Toyoda Gosei Co., Ltd.	Light-emitting semiconductor device using gallium nitride group compound
JPH088217B2 (ja) *	1991-01-31	1996-01-29	日亜化学工業株式会社	窒化ガリウム系化合物半導体の結晶成長方法
JP2791448B2 (ja) *	1991-04-19	1998-08-27	日亜化学工業株式会社	発光ダイオード
JPH0583184U (ja) *	1991-05-30	1993-11-09	株式会社工業技術研究所	移動式足場
JP3352712B2 (ja) *	1991-12-18	2002-12-03	浩天野	窒化ガリウム系半導体素子及びその製造方法
JP2657743B2 (ja) *	1992-10-29	1997-09-24	豊田合成株式会社	窒素−３族元素化合物半導体発光素子
DE19613265C1 (de) *	1996-04-02	1997-04-17	Siemens Ag	Bauelement in stickstoffhaltigem Halbleitermaterial
US6713789B1 (en) *	1999-03-31	2004-03-30	Toyoda Gosei Co., Ltd.	Group III nitride compound semiconductor device and method of producing the same
JP3994623B2 (ja) *	2000-04-21	2007-10-24	豊田合成株式会社	Ｉｉｉ族窒化物系化合物半導体素子の製造方法
GB2372635B (en) *	2000-08-18	2005-01-19	Showa Denko Kk	Method of fabricating group-III nitride semiconductor crystals.
JP3631724B2 (ja)	2001-03-27	2005-03-23	日本電気株式会社	Ｉｉｉ族窒化物半導体基板およびその製造方法
JP3521201B2 (ja) *	2001-08-06	2004-04-19	豊田合成株式会社	窒化ガリウム化合物半導体の製造方法
JP4289203B2 (ja) *	2004-04-15	2009-07-01	豊田合成株式会社	ＧａＮ系半導体
JP2007533164A (ja)	2004-04-15	2007-11-15	トラスティーズオブボストンユニバーシティ	テクスチャ出しされた半導体層を特徴とする光学装置
US8035113B2 (en)	2004-04-15	2011-10-11	The Trustees Of Boston University	Optical devices featuring textured semiconductor layers
WO2007052840A1 (en)	2005-11-07	2007-05-10	Showa Denko K.K.	Semiconductor light-emitting diode
JP4637781B2 (ja)	2006-03-31	2011-02-23	昭和電工株式会社	ＧａＮ系半導体発光素子の製造方法
JP2009054767A (ja) *	2006-10-10	2009-03-12	Showa Denko Kk	Ｉｉｉ族窒化物半導体の積層構造及びその製造方法と半導体発光素子とランプ
JP2008177523A (ja) *	2006-12-20	2008-07-31	Showa Denko Kk	Ｉｉｉ族窒化物化合物半導体発光素子の製造方法、及びｉｉｉ族窒化物化合物半導体発光素子、並びにランプ
JP2008153603A (ja)	2006-12-20	2008-07-03	Showa Denko Kk	Ｉｉｉ族窒化物化合物半導体発光素子の製造方法、及びｉｉｉ族窒化物化合物半導体発光素子、並びにランプ
JP4908381B2 (ja) *	2006-12-22	2012-04-04	昭和電工株式会社	Ｉｉｉ族窒化物半導体層の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
KR101071450B1 (ko) *	2006-12-22	2011-10-10	쇼와 덴코 가부시키가이샤	Ⅲ족 질화물 반도체층의 제조 방법 및 ⅲ족 질화물 반도체 발광 소자, 및 램프
US8592800B2 (en)	2008-03-07	2013-11-26	Trustees Of Boston University	Optical devices featuring nonpolar textured semiconductor layers
JP2009283785A (ja) *	2008-05-23	2009-12-03	Showa Denko Kk	Ｉｉｉ族窒化物半導体積層構造体およびその製造方法
JP2009283895A (ja) *	2008-12-15	2009-12-03	Showa Denko Kk	Ｉｉｉ族窒化物半導体積層構造体
JP2011082570A (ja) *	2011-01-11	2011-04-21	Showa Denko Kk	Ｉｉｉ族窒化物半導体発光素子の製造方法

1984
- 1984-02-14 JP JP59024444A patent/JPS60173829A/ja active Granted

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH11163404A (ja) *	1997-11-25	1999-06-18	Toyoda Gosei Co Ltd	ＧａＮ系半導体
WO2007129773A1 (ja)	2006-05-10	2007-11-15	Showa Denko K.K.	Iii族窒化物化合物半導体積層構造体
WO2008020599A1 (en)	2006-08-18	2008-02-21	Showa Denko K.K.	Method for manufacturing group iii nitride compound semiconductor light-emitting device, group iii nitride compound semiconductor light-emitting device, and lamp
US8227284B2 (en)	2006-08-18	2012-07-24	Showa Denko K.K.	Group-III nitride compound semiconductor light-emitting device, method of manufacturing group-III nitride compound semiconductor light-emitting device, and lamp
DE112007002182B4 (de)	2006-09-26	2023-02-16	Toyoda Gosei Co., Ltd.	Verfahren zum Herstellen einer Gruppe-III-Nitridverbindungshalbleiter-Lichtemissionsvorrichtung
DE112007002182T5 (de)	2006-09-26	2009-07-09	Showa Denko K.K.	Gruppe-III-Nitridverbindungshalbleiter-Lichtemissionsvorrichtung, Verfahren zum Herstellen einer Gruppe-III-Nitridverbindungshalbleiter-Lichtemissionsvorrichtung, und Lampe
WO2008041499A1 (en)	2006-09-29	2008-04-10	Showa Denko K.K.	Filming method for iii-group nitride semiconductor laminated structure
US8389313B2 (en)	2006-09-29	2013-03-05	Toyoda Gosei Co., Ltd.	Deposition method of III group nitride compound semiconductor laminated structure
US8557092B2 (en)	2006-10-20	2013-10-15	Toyoda Gosei Co., Ltd.	Sputtering deposition apparatus and backing plate for use in sputtering deposition apparatus
US8106419B2 (en)	2006-11-08	2012-01-31	Showa Denko K.K.	Group-III nitride compound semiconductor light-emitting device, method of manufacturing group-III nitride compound semiconductor light-emitting device, and lamp
WO2008075559A1 (ja)	2006-12-20	2008-06-26	Showa Denko K.K.	Ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
US8198179B2 (en)	2007-02-21	2012-06-12	Showa Denko K.K.	Method for producing group III nitride semiconductor light-emitting device
US8097482B2 (en)	2007-06-11	2012-01-17	Showa Denko K.K	Method for manufacturing group III nitride semiconductor, method for manufacturing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp
US8674398B2 (en)	2007-07-04	2014-03-18	Toyoda Gosei Co., Ltd.	Group III nitride semiconductor light emitting device and production method thereof, and lamp
WO2009041256A1 (ja)	2007-09-27	2009-04-02	Showa Denko K.K.	Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
WO2009113458A1 (ja)	2008-03-13	2009-09-17	昭和電工株式会社	Ｉｉｉ族窒化物半導体素子及びその製造方法、ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
JP2009277882A (ja) *	2008-05-14	2009-11-26	Showa Denko Kk	Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子、並びにランプ

Also Published As

Publication number	Publication date
JPS60173829A (ja)	1985-09-07

Publication	Publication Date	Title
JPH0586646B2 (de)	1993-12-13
US4855249A (en)	1989-08-08	Process for growing III-V compound semiconductors on sapphire using a buffer layer
Davis	1991	III-V nitrides for electronic and optoelectronic applications
JP2704181B2 (ja)	1998-01-26	化合物半導体単結晶薄膜の成長方法
Amano et al.	1986	Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
CN105861987B (zh)	2019-02-19	基于六方氮化硼和磁控溅射氮化铝的氮化镓生长方法
JP3440873B2 (ja)	2003-08-25	Ｉｉｉ族窒化物系化合物半導体素子の製造方法
JPH10326911A (ja)	1998-12-08	ｐ型ＩＩＩ族ナイトライド化合物半導体およびその製造方法
JPH08325094A (ja)	1996-12-10	３−５族化合物半導体の製造方法
JP3140751B2 (ja)	2001-03-05	窒化ガリウム系化合物半導体発光素子
JP3716440B2 (ja)	2005-11-16	ホウ素含有窒化アルミニウム薄膜および製造方法
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