JPH0566742B2 - - Google Patents
Info
- Publication number
- JPH0566742B2 JPH0566742B2 JP59123751A JP12375184A JPH0566742B2 JP H0566742 B2 JPH0566742 B2 JP H0566742B2 JP 59123751 A JP59123751 A JP 59123751A JP 12375184 A JP12375184 A JP 12375184A JP H0566742 B2 JPH0566742 B2 JP H0566742B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- base
- collector
- layer
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000009792 diffusion process Methods 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 9
- 239000012212 insulator Substances 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 230000005669 field effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 17
- 229920005591 polysilicon Polymers 0.000 description 17
- 108091006146 Channels Proteins 0.000 description 6
- 230000003321 amplification Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 4
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59123751A JPS613446A (ja) | 1984-06-18 | 1984-06-18 | 集積回路装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59123751A JPS613446A (ja) | 1984-06-18 | 1984-06-18 | 集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS613446A JPS613446A (ja) | 1986-01-09 |
| JPH0566742B2 true JPH0566742B2 (de) | 1993-09-22 |
Family
ID=14868407
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59123751A Granted JPS613446A (ja) | 1984-06-18 | 1984-06-18 | 集積回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS613446A (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0256315B1 (de) * | 1986-08-13 | 1992-01-29 | Siemens Aktiengesellschaft | Integrierte Bipolar- und komplementäre MOS-Transistoren auf einem gemeinsamen Substrat enthaltende Schaltung und Verfahren zu ihrer Herstellung |
| JPS6360553A (ja) * | 1986-09-01 | 1988-03-16 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置とその製造方法 |
-
1984
- 1984-06-18 JP JP59123751A patent/JPS613446A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS613446A (ja) | 1986-01-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |