JPH05259063A - Semiconductor substrate spin coating method - Google Patents
Semiconductor substrate spin coating methodInfo
- Publication number
- JPH05259063A JPH05259063A JP5184392A JP5184392A JPH05259063A JP H05259063 A JPH05259063 A JP H05259063A JP 5184392 A JP5184392 A JP 5184392A JP 5184392 A JP5184392 A JP 5184392A JP H05259063 A JPH05259063 A JP H05259063A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- solvent
- coating
- center
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体基板のスピンコ
ーティング方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for spin coating a semiconductor substrate.
【０００２】[0002]
【従来の技術】従来、シリコンウェーハやマスク基板な
どの半導体基板にフォトレジストあるいは接着用ワック
スなどの塗布溶液をコーティングする際の代表的な方法
としてスピンコート法がある。このスピンコート法は、
図４に示すように、回転台２に真空式などのウェーハチ
ャック３で吸着固定された半導体基板（以下、単に基板
という）１上に、軸線Ａが垂直とされる塗布ノズル４に
よって塗布溶液５をウェーハ１の中心部１ａに滴下し、
スピンドル軸６を介してモータ７で矢示Ｆ方向に高速回
転させることによりその作用する遠心力を利用して溶液
を広げて均一な厚みのコーティング層５ａを得るように
コーティングする方法である。このときのコーティング
層５ａの膜厚は溶液濃度や溶媒の揮発速度、スピン回転
数などによって決まり、溶媒の揮発速度は環境温度や湿
度、溶液温度あるいは基板１の温度などにより影響され
る。2. Description of the Related Art Conventionally, there has been a spin coating method as a typical method for coating a semiconductor substrate such as a silicon wafer or a mask substrate with a coating solution such as a photoresist or an adhesive wax. This spin coating method
As shown in FIG. 4, a coating solution 5 is applied by a coating nozzle 4 whose axis A is vertical on a semiconductor substrate (hereinafter, simply referred to as a substrate) 1 which is suction-fixed to a rotary table 2 by a wafer chuck 3 of a vacuum type or the like. Is dropped onto the central portion 1a of the wafer 1,
This is a method in which the motor 7 is rotated at a high speed in the direction of the arrow F through the spindle shaft 6 to spread the solution by utilizing the centrifugal force that acts so as to obtain a coating layer 5a having a uniform thickness. The film thickness of the coating layer 5a at this time is determined by the solution concentration, the solvent volatilization rate, the spin rotation speed, and the like, and the solvent volatilization rate is influenced by the environmental temperature, humidity, the solution temperature, the temperature of the substrate 1, and the like.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記し
たような従来のスピンコート法では、基板１の中心部１
ａでは回転によって生じる遠心力がほとんどゼロである
ため塗布溶液５の広がりが悪くなる。そして、コーティ
ング層５ａの膜厚が図５に示すように、基板１の中心部
１ａ付近において局所的に膜厚が厚くなりデッドスポッ
トとなるという欠点がある。However, in the conventional spin coating method as described above, the central portion 1 of the substrate 1 is
In the case of a, the centrifugal force generated by the rotation is almost zero, so that the spread of the coating solution 5 becomes worse. Then, as shown in FIG. 5, the coating layer 5a has a drawback that it locally becomes thick and becomes a dead spot near the central portion 1a of the substrate 1.
【０００４】ところで、このような基板の中心部におけ
る厚膜対策としては、たとえば特開昭64− 73618号公報
に開示されているように基板の中心部に不活性ガスなど
の気体を吹きつける配管部を設けた塗布装置が提案され
ている。しかし、この方法では基板の中心部の平均膜厚
は低下するが、吹き付ける気体の風圧の影響により溶剤
が飛散してその周辺に２次的なデッドスポットを生じる
ことになり、やはり膜厚にバラツキが生じる欠点があ
る。By the way, as a countermeasure against such a thick film in the central portion of the substrate, for example, a pipe for blowing a gas such as an inert gas to the central portion of the substrate as disclosed in JP-A-64-73618. A coating apparatus having a section has been proposed. However, with this method, the average film thickness at the central portion of the substrate is reduced, but the solvent is scattered due to the influence of the wind pressure of the gas to be sprayed, and a secondary dead spot is generated around the solvent. Has a drawback.
【０００５】本発明は、上記のような従来技術の課題を
解決した半導体基板のコーティング方法を提供すること
を目的とする。An object of the present invention is to provide a method for coating a semiconductor substrate that solves the above-mentioned problems of the prior art.
【０００６】[0006]
【課題を解決するための手段】本発明は、回転台に固定
された半導体基板の中心部にフォトレジストあるいは接
着用ワックスなどの塗布溶液を滴下したのち高速回転で
スピンコーティングする方法において、前記半導体基板
の回転開始と同時に該中心部に溶媒を滴下することを特
徴とする半導体基板のスピンコーティング方法である。The present invention provides a method of spin coating at high speed after dropping a coating solution such as photoresist or adhesive wax onto the central portion of a semiconductor substrate fixed to a turntable. A spin coating method for a semiconductor substrate is characterized in that a solvent is dropped onto the central portion at the same time when the rotation of the substrate is started.
【０００７】[0007]
【作 用】本発明によれば、スピンコーティング開始と
同時に回転する基板の中心部に溶媒を滴下するようにし
たので、基板の中心部の塗布溶液の濃度が下がって粘性
が低下し、中心部のコーティング層の膜厚は薄くするこ
とができ、これによってコーティング層全体の膜厚を均
一化することができる。[Operation] According to the present invention, the solvent is dropped onto the central portion of the substrate which rotates at the same time as the spin coating is started, so that the concentration of the coating solution in the central portion of the substrate is lowered and the viscosity is lowered. The thickness of the coating layer can be reduced, and thus the thickness of the entire coating layer can be made uniform.
【０００８】[0008]
【実施例】以下に、本発明の実施例について図面を参照
して説明するが、図中、従来例と同一部材は同一符号を
付して説明を省略する。図１は本発明の実施例の構成を
模式的に示す側面図であり、本発明に用いられる溶媒ノ
ズル７は回転台２の上方側部に配設される。この溶媒ノ
ズル７へは、図示しない溶媒タンクから溶媒が供給され
る。Embodiments of the present invention will be described below with reference to the drawings. In the drawings, the same members as those of the conventional example are designated by the same reference numerals and the description thereof will be omitted. FIG. 1 is a side view schematically showing a configuration of an embodiment of the present invention, and a solvent nozzle 7 used in the present invention is arranged on an upper side portion of a turntable 2. The solvent is supplied to the solvent nozzle 7 from a solvent tank (not shown).
【０００９】そして、以下の手順でスピンコーティング
を行う。 まず、塗布ノズル４によって塗布溶液５を所定量だ
け基板１の中心部１ａに滴下する。 ついで、図２に示すように塗布ノズル４を基板１の
中心部１ａから側部に移動した後、溶媒ノズル７を中心
部１ａに移動して位置決めする。 スピンドル軸６を介して回転台２を矢示Ｆ方向に高
速回転させると同時に、溶媒ノズル７から溶媒８を回転
する基板１の中心部１ａに所定量滴下する。この溶媒８
によって、基板１の中心部１ａの塗布溶液５の濃度が下
がり、溶液の粘性が低下することによりコーティング層
５ａの膜厚は薄くなる。 所定の時間の経過後、回転台２を停止してスピンコ
ーティングを終了するとともに、溶媒ノズル７を所定の
位置に退避させる。これによって、局所的な膜厚が厚く
なるデッドスポットを解消し、基板１の全面に均一な厚
みのコーティング層５ａを形成することができる。Then, spin coating is performed according to the following procedure. First, a predetermined amount of the coating solution 5 is dropped onto the central portion 1a of the substrate 1 by the coating nozzle 4. Then, as shown in FIG. 2, the coating nozzle 4 is moved from the central portion 1a of the substrate 1 to the side portion, and then the solvent nozzle 7 is moved to the central portion 1a and positioned. The rotary table 2 is rotated at a high speed in the arrow F direction via the spindle shaft 6, and at the same time, a predetermined amount of the solvent 8 is dropped from the solvent nozzle 7 onto the central portion 1a of the rotating substrate 1. This solvent 8
As a result, the concentration of the coating solution 5 in the central portion 1a of the substrate 1 decreases, and the viscosity of the solution decreases, so that the film thickness of the coating layer 5a decreases. After a lapse of a predetermined time, the rotary table 2 is stopped to end the spin coating, and the solvent nozzle 7 is retracted to a predetermined position. As a result, the dead spot where the film thickness locally becomes thick can be eliminated, and the coating layer 5a having a uniform thickness can be formed on the entire surface of the substrate 1.
【００１０】塗布溶液として接着用ワックスを用いてシ
リコンウェーハをスピンコーティングする際に本発明法
を用いた。まず、シリコンウェーハの中心部に液状のワ
ックスを約2.4cc 滴下した後、回転台を4000rpm で高速
で回転させながらその中心部に溶媒を 1.0cc滴下し、シ
リコンウェーハの面にワックス膜を形成した。そのとき
の膜厚の分布の結果を図３に示した。なお、比較のため
に、従来法での膜厚分布も同図に併せて示した。この図
から明らかなように、従来法での最大値と最小値との差
が419 Åであるのに対し、本発明法では195 Åと約53％
も小さくなっており、膜厚の均一性が向上していること
がわかる。The method of the present invention was used when spin-coating a silicon wafer using an adhesive wax as a coating solution. First, about 2.4 cc of liquid wax was dropped on the center of the silicon wafer, and then 1.0 cc of solvent was dropped on the center of the silicon wafer while rotating the turntable at a high speed of 4000 rpm to form a wax film on the surface of the silicon wafer. . The result of the distribution of the film thickness at that time is shown in FIG. For comparison, the film thickness distribution in the conventional method is also shown in the same figure. As is clear from this figure, the difference between the maximum value and the minimum value in the conventional method is 419 Å, whereas in the method of the present invention, it is 195 Å, about 53%.
It can be seen that the film thickness is smaller and the uniformity of the film thickness is improved.
【００１１】[0011]
【発明の効果】以上説明したように本発明によれば、ス
ピンコーティングする際にコーティング層の中心部に溶
媒を滴下するようにしたので、その中心部の膜厚の均一
性を高めることができ、これによって半導体基板全体の
膜厚の均一化を図ることができる。As described above, according to the present invention, since the solvent is dropped onto the central portion of the coating layer during spin coating, the uniformity of the film thickness at the central portion can be improved. As a result, the film thickness of the entire semiconductor substrate can be made uniform.
【図１】本発明のスピンコーティング装置の構成を模式
的に示す側面図である。FIG. 1 is a side view schematically showing a configuration of a spin coating apparatus of the present invention.
【図２】本発明の動作を説明する図である。FIG. 2 is a diagram for explaining the operation of the present invention.
【図３】本発明によって得られたコーティング層の膜厚
分布を示す特性図である。FIG. 3 is a characteristic diagram showing a film thickness distribution of a coating layer obtained by the present invention.
【図４】従来のスピンコーティング装置の構成を模式的
に示す側面図である。FIG. 4 is a side view schematically showing the configuration of a conventional spin coating apparatus.
【図５】従来のコーティング層の膜厚分布の説明図であ
る。FIG. 5 is an explanatory diagram of a film thickness distribution of a conventional coating layer.
１ 基板（半導体基板） ２ 回転台 ３ ウェーハチャック ４ 塗布ノズル ５ 塗布溶液 ５ａ コーティング層 ６ スピンドル軸 ７ 溶媒ノズル ８ 溶媒 1 substrate (semiconductor substrate) 2 turntable 3 wafer chuck 4 coating nozzle 5 coating solution 5a coating layer 6 spindle shaft 7 solvent nozzle 8 solvent
Claims (1)
部にフォトレジストあるいは接着用ワックスなどの塗布
溶液を滴下したのち高速回転でスピンコーティングする
方法において、前記半導体基板の回転開始と同時に前記
半導体基板の中心部に溶媒を滴下することを特徴とする
半導体基板のスピンコーティング方法。1. A method of dropping a coating solution such as a photoresist or an adhesive wax onto a central portion of a semiconductor substrate fixed to a turntable and then spin-coating at a high speed, wherein the semiconductor substrate is rotated at the same time as the rotation of the semiconductor substrate. A spin coating method for a semiconductor substrate, characterized in that a solvent is dropped onto the center of the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5184392A JPH05259063A (en) | 1992-03-10 | 1992-03-10 | Semiconductor substrate spin coating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5184392A JPH05259063A (en) | 1992-03-10 | 1992-03-10 | Semiconductor substrate spin coating method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05259063A true JPH05259063A (en) | 1993-10-08 |
Family
ID=12898138
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5184392A Pending JPH05259063A (en) | 1992-03-10 | 1992-03-10 | Semiconductor substrate spin coating method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05259063A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004153262A (en) * | 2003-10-14 | 2004-05-27 | Oki Electric Ind Co Ltd | Method of spin coating |
| WO2021002269A1 (en) * | 2019-07-04 | 2021-01-07 | 東京エレクトロン株式会社 | Coating method and coating device |
| JPWO2021060348A1 (en) * | 2019-09-26 | 2021-04-01 | ||
| CN114310653A (en) * | 2021-11-29 | 2022-04-12 | 山东有研半导体材料有限公司 | Wax-containing surface mounting process for high-quality geometric parameter polishing sheet |
-
1992
- 1992-03-10 JP JP5184392A patent/JPH05259063A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004153262A (en) * | 2003-10-14 | 2004-05-27 | Oki Electric Ind Co Ltd | Method of spin coating |
| WO2021002269A1 (en) * | 2019-07-04 | 2021-01-07 | 東京エレクトロン株式会社 | Coating method and coating device |
| JPWO2021002269A1 (en) * | 2019-07-04 | 2021-01-07 | ||
| JPWO2021060348A1 (en) * | 2019-09-26 | 2021-04-01 | ||
| WO2021060348A1 (en) * | 2019-09-26 | 2021-04-01 | 富士フイルム株式会社 | Heat-conducting layer production method, laminate production method, and semiconductor device production method |
| CN114450098A (en) * | 2019-09-26 | 2022-05-06 | 富士胶片株式会社 | Method for manufacturing heat conductive layer, method for manufacturing laminate, and method for manufacturing semiconductor device |
| US11848249B2 (en) | 2019-09-26 | 2023-12-19 | Fujifilm Corporation | Manufacturing method for thermal conductive layer, manufacturing method for laminate, and manufacturing method for semiconductor device |
| CN114310653A (en) * | 2021-11-29 | 2022-04-12 | 山东有研半导体材料有限公司 | Wax-containing surface mounting process for high-quality geometric parameter polishing sheet |
| CN114310653B (en) * | 2021-11-29 | 2024-04-16 | 山东有研半导体材料有限公司 | Waxed patch technology of high-quality geometric parameter polished wafer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH09246173A (en) | Method for coating | |
| US6001417A (en) | Resist coating method and resist coating apparatus | |
| JPH05259063A (en) | Semiconductor substrate spin coating method | |
| JPH05259050A (en) | Spin coating on semiconductor substrate and device | |
| JPH1092734A (en) | Method for applying resist material | |
| JPH05259049A (en) | Spin coating on semiconductor substrate | |
| JPH05259061A (en) | Semiconductor substrate spin coating method and device | |
| JPS62185322A (en) | Applicator for photo-resist | |
| JP2793554B2 (en) | Method for manufacturing semiconductor device | |
| JPH05259062A (en) | Semiconductor substrate spin coating method | |
| JPH05259052A (en) | Spin coating on semiconductor substrate and device | |
| JP3512511B2 (en) | Spin coating apparatus and spin coating method | |
| KR100272521B1 (en) | Photoresist coating method of semiconductor device | |
| JPH0897118A (en) | Method for applying resist | |
| JPS61238050A (en) | Coating method | |
| JPS6115773A (en) | Coating apparatus | |
| JPH08330206A (en) | Photoresist application method, method for manufacturing semiconductor integrated circuit device using it, and photoresist application device | |
| JPH02156626A (en) | Resist coating | |
| JPH10261578A (en) | Resist-applying device | |
| Haas et al. | Real-time monitoring of striation development during spin-on-glass deposition | |
| JPH0463532B2 (en) | ||
| JPH10172894A (en) | Apparatus and method for applying resist | |
| JPH0845923A (en) | Semiconductor coating film forming method | |
| JPH05123632A (en) | Method for applying liquid coating material | |
| JPH05259057A (en) | Semiconductor substrate spin coating method and device |