JPH05226269A - 半導体ウエーハにチタンケイ化物を蒸着させるための化学蒸着技術 - Google Patents
半導体ウエーハにチタンケイ化物を蒸着させるための化学蒸着技術Info
- Publication number
- JPH05226269A JPH05226269A JP4298848A JP29884892A JPH05226269A JP H05226269 A JPH05226269 A JP H05226269A JP 4298848 A JP4298848 A JP 4298848A JP 29884892 A JP29884892 A JP 29884892A JP H05226269 A JPH05226269 A JP H05226269A
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- chemical vapor
- deposition method
- silane
- amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 53
- 238000005229 chemical vapour deposition Methods 0.000 title claims description 52
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 229910021341 titanium silicide Inorganic materials 0.000 title description 2
- 238000007740 vapor deposition Methods 0.000 title description 2
- 239000010936 titanium Substances 0.000 claims abstract description 51
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 32
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910000077 silane Inorganic materials 0.000 claims abstract description 27
- 239000012159 carrier gas Substances 0.000 claims abstract description 23
- 229910052756 noble gas Inorganic materials 0.000 claims abstract description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 5
- 239000002243 precursor Substances 0.000 claims description 33
- 229910008484 TiSi Inorganic materials 0.000 claims description 30
- 239000007789 gas Substances 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 25
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 229910021332 silicide Inorganic materials 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- IRIIKYVSZMJVNX-UHFFFAOYSA-N 2,4,6-tris(2-methylaziridin-1-yl)-1,3,5-triazine Chemical compound CC1CN1C1=NC(N2C(C2)C)=NC(N2C(C2)C)=N1 IRIIKYVSZMJVNX-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000008240 homogeneous mixture Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/147—Silicides
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Abstract
に形成する。 【構成】 ウエーハ50を反応器の中に設け、選択した
量のガス状のTi(NR2)4前駆体、ガス状のシラン及
び少なくとも1種の貴ガスを含むキャリアガスをその中
に好ましくは約50〜2000sccmの割合で注入
し、Ti(NR2)4(ここで、RはHと炭素含有基とか
らなる群から選択する)のシランに対する体積比が1:
300から1:10となる量のTi(NR2)4前駆体及
びシランを供給し、TiSix及びTiNの混合物から
成る膜を上記ウエーハに蒸着させるに効果的な選択され
た圧力、好ましくは約150〜100トルと温度、好ま
しくは約100〜500℃に上記反応器を維持して、上
記前駆体とシランとを反応させる。
Description
処理における接触技術に関し、より詳細には、コンタク
トオープニング(contact opening)の中にケイ化物の
層を設けて接触抵抗を減少させる技術に関する。
基板の中に形成されかつ隔離されたアクティブ・デバイ
ス領域に電気的な接触を形成することが必要である。ア
クティブ・デバイス領域は、高い導電性を有するパスす
なわち線によって接続され、これらパスすなわち線は、
基板の表面を覆う絶縁材料の上に形成される。導電性の
パスとアクティブ・デバイス領域との間の電気的な接続
を行うために、絶縁体に開口を設け、導電性の膜が所望
の領域に接触できるようにする。そのような開口は一般
に、コンタクトオープニング又は単に「コンタクト」と
呼ばれている。
ミクロンに近づくに従って、通常のプロセスパラメータ
は、アクティブ領域すなわちエリアと導電層との間の大
きな抵抗に耐えられなくなっている。そのような接触抵
抗を減少させるための主要な方法は、導電性の膜を施し
て導電性のランナを形成する前に、アクティブ領域の上
に金属ケイ化物を形成することである。形成される一般
的な金属ケイ化物材料はTiSixであり、多くの場合
においてxは「2」である。TiSix材料は、コンタ
クトオープニングの中のアクティブ領域に接触するウエ
ーハの上にチタンの薄層を最初に施すことにより形成さ
れる。その後、ウエーハを高温で焼きなます。これによ
り、チタンがアクティブ領域のケイ素と反応し、TiS
ixを形成する。そのようなプロセスは、チタン金属が
ケイ素のアクティブ領域に接触する箇所でのみTiSi
xが形成されるので、自己整合すなわちセルフ・アライ
ニングと呼ばれる。施されたチタン膜は、絶縁性でかつ
実質的に無反応性の総てのSiO2層の上に延在する。
ウエーハ10が図示されており、この半導体ウエーハ1
0はバルク基板12を備え、該バルク基板はこのバルク
基板に形成されたアクティブ領域14を有している。多
くの場合においてはBPSGの形態のSiO2である絶
縁材料から成る上側層16が、基板12の上に設けら
れ、かつ適宜にエッチングアクティブ領域14に対する
コンタクトオープニング18を形成している。チタンの
薄層20が、絶縁層16の上に施されてアクティブ領域
14に接触している。高温のアニールの工程をアルゴン
等の不活性雰囲気中で行い、チタン金属に接触するアク
ティブ領域14を反応させてTiSixを形成し、これ
により、図示のTiSix領域22を形成する。領域1
4に接触していない層20の残りの部分は、下側のSi
O2絶縁層16とは実質的に反応せず、従ってチタン金
属元素の状態のままである。
ケイ化物領域22の上に施される。TiSixに対する
タングステンの接着力は小さい。この問題を解消するた
めに、一般にはTiNから形成される中間層が、ケイ化
物領域22とタングステンの上側層との間に介挿され
る。TiNは、金属タングステン層に対する「糊付け
(glue)層」と一般に呼ばれている。そのような層は、
窒素が支配的である雰囲気中でチタン層20と共にウエ
ーハをアニールすることにより形成される。そのような
条件の下では、アクティブ領域14の上にある層20の
下側の部分がケイ素と反応してTiSixを形成し、一
方接触領域14の上のチタン層の上側の部分並びに絶縁
材料16の上の層20の残りの部分は雰囲気中の窒素と
反応してTiNを形成する。この時点から、形成される
べきランナの支配的な導電材料が施される。形成される
ケイ化物領域22は高い導電性を有し、ケイ化物領域2
2が存在しない場合に比較して、ランナとアクティブ領
域14との間に低い電気抵抗を与える。上述の如きケイ
化物特にチタンケイ化物の形成は、「Silicon Processi
ng For TheVLSI Era, Vol.2-Process Integration」の
143−150ページにWolf外により述べられてい
る。
ンタクトオープニングがより深くかつ狭くなるに連れ
て、接触壁は垂直になり、大部分の金属堆積技術は、ア
クティブ領域14との適正な接触を形成する必要な工程
をカバーしきれなくなっている。そのような状態を図2
に示す。図2においては、基板12aのアクティブ領域
14aは、図1のアクティブ領域14よりもかなり小さ
く示されている。これに対応して、アクティブ領域14
aに対するかなり狭いコンタクトオープニング18aが
設けられ、これにより回路密度を極力大きくしている。
明らかなように、コンタクトオープニング18aのその
幅に対する深さの比は、図1のコンタクトオープニング
18の幅に対する深さの比よりも大きい。このような狭
くかつ高いアスペクト比(縦横比)のコンタクトオープ
ニング18aは、図示のように、層20aが領域14a
と十分に接触することができないようにする。従って、
望ましいTiSix及び電気的な接触が形成されない。
欠点を解消し、アクティブ領域14及び14aの上にT
iSixの領域を確実に形成することが望まれる。
器の中で半導体ウエーハの上に合致するTiSix相を
形成するための化学蒸着法において、ウエーハを反応器
の中に設ける段階と、選択した量のガス状のチタン有機
金属前駆体、ガス状のシラン及びキャリアガスを前記反
応器の中に注入する段階と、前記前駆体及びシランを反
応させ、TiSixから成る膜を前記ウエーハに蒸着さ
せるに効果的な選択された圧力及び選択された温度に前
記反応器を維持する段階とを備えることを特徴とする方
法を提供する。
ハの上に合致するTiSix相を形成するための化学蒸
着法において、ウエーハを反応器の中に設ける段階と、
選択した量のガス状のTi(NR2)4前駆体、ガス状の
シラン及びキャリアガスを前記反応器の中に注入し、前
記RをHと炭素含有基(radical)とから成る群から選
択し、Ti(NR2)4のシランに対する体積比が1:3
00から1:10となる量のTi(NR2)4前駆体及び
シランを供給し、前記キャリアガスの量を約50scc
mから約2000sccmとし、前記キャリアガスを少
なくとも1つの貴ガスから構成する段階と、前記前駆体
及びシランを反応させ、TiSix及びTiNの混合物
から成る膜を前記ウエーハに蒸着させるに効果的な選択
された圧力及び選択された温度に前記反応器を維持し、
前記記選択された温度を約100°Cから約500°C
とし、また前記選択された圧力を約150ミリトルから
約100トルとする段階とを備えることを特徴する化学
蒸着法も提供する。
実施例を説明する。
体ウエーハの上になじみやすいTiSix層を形成する
ための化学蒸着(CVD)方法が開示される。本方法
は、(a)ウエーハをCVD反応器の中に設ける段階
と、(b)選択した量のガス状チタン有機金属の前駆
体、ガス状シラン(SiH4)及びキャリアガスを反応
器に注入する段階と、(c)上記前駆体及びシランを反
応させウエーハ上にTiSixから成る蒸着膜を形成す
るために効果的な選択された圧力及び選択された温度に
上記反応器を維持する段階とを備える。
(NR2)4から本質的になり、ここにおいて、Rは、水
素(H)と、炭素を含む基とから成る群から選択され
る。その例としては、Ti(N(CH3)2)4及びTi
(N(C2H5)2)4がある。テトラジメチルアミド・チ
タンの略称であるTMATと一般に呼称されるTi(N
(CH3)2)4は、最も好ましいチタン有機金属前駆体
であると理解されている。
結合している有機金属前駆体の例である。そのような状
況において、前駆体の一部を転化してチタン窒化物を形
成し、これにより、蒸着された膜をチタン窒化物相及び
TiSi2相のほぼ均質な混合物とする。そのような状
況においては、蒸着された膜が、約80%のTiSix
及び20%のチタン窒化物を含むことが予期される。チ
タン窒化物は公知の拡散バリア材料であるので、そのよ
うな膜は、接触抵抗を減少させまた良好な拡散バリア特
性を維持するという両方の意味でより明確な利点をもた
らす。従って、別個のバリア層を必要とせず、従って時
間及び材料を節約できることが予想される。
+ TiSiyN1-y + 有機副生物 上式中、xは多くの場合において2であり、yは0から
1である。有機副生物は、キャリアガス及び未反応ガス
と共にほとんど排出され、蒸着された膜の問題となる程
の割合を構成しないものと予想される。
チタン有機金属前駆体のシランに対する体積比が1:3
00から1:10となるように選択されるのが好まし
く、約1:80であるのが最も好ましい。
の上の気体の分布を制御し、ウエーハ上に蒸着される膜
の良好な均一性を維持する。好ましいキャリアガスは、
ヘリウムあるいはアルゴン等の貴ガスであり、そのよう
なガスの好ましい流量は、約50sccm(1分間当た
りの標準状態における立方センチメートル)から約2,
000sccmである。
100トルであるのが好ましく、400ミリトルが最も
好ましい。そのような条件は一般に、低圧化学蒸着(L
PCVD)と呼ばれている。選択される温度は、約10
0°Cから約500°Cであるのが好ましく、400°
Cであるのが最も好ましい。
には、チタン有機金属前駆体の好ましい流量は約2sc
cmから約50sccmであり、SiH4の好ましい流
量は約100sccmから約2000sccmである。
約5sccmのチタン有機金属前駆体の流量、及び約4
00sccmのSiH4の流量が最も好ましい。上述の
如き条件におけるヘリウムあるいはアルゴンの流量は1
50sccmであるのが好ましく、温度及び圧力は40
0°C及び400ミリトルにそれぞれ維持される。その
ような条件においては、所望の膜は概算で、1分間当た
り約50オングストロームから約100オングストロー
ムの割合で蒸着される。蒸着された膜の好ましい厚み
は、約200オングストロームから約1000オングス
トロームである。
ハ50を示している。ウエーハ50はバルク基板52を
備えており、該バルク基板にはアクティブ領域54が形
成されている。BPSGが支配的である絶縁層56が設
けられ、かつエッチングされてコンタクトオープニング
58を形成している。上述の技術によって、TiSix
の層60が輪郭に合致して設けられ、領域54と極めて
良好に接触している。チタン有機金属前駆体がNに結合
している場合には、領域60もTiN型の相を備える。
膜をアニールし、アクティブ領域54からケイ素を膜に
導入し、これにより、より良好な相互接続を行わせて接
触抵抗を低下させるのが望ましい。そのようなアニール
を行うための好ましい雰囲気は、N2又はNH3等の窒素
を含む雰囲気である。その後導電層を施してエッチング
を行うことができる。
ウエーハの概略的な断面図である。
別のウエーハの概略的な断面図である。
略的な断面図である。
Claims (28)
- 【請求項1】 化学蒸着反応器の中で半導体ウエーハの
上に合致するTiSix相を形成するための化学蒸着法
において、 ウエーハを反応器の中に設ける段階と、 選択した量のガス状のチタン有機金属前駆体、ガス状の
シラン及びキャリアガスを前記反応器の中に注入する段
階と、 前記前駆体及びシランを反応させ、TiSixから成る
膜を前記ウエーハに蒸着させるに効果的な選択された圧
力及び選択された温度に前記反応器を維持する段階とを
備える化学蒸着法。 - 【請求項2】 請求項1の化学蒸着法において、チタン
有機金属前駆体のシランに対する容積比が1:300か
ら1:10になるように、前記気体の量を選択すること
を特徴とする化学蒸着法。 - 【請求項3】 請求項2の化学蒸着法において、チタン
有機金属前駆体のシランに対する容積比が1:80にな
るように、前記気体の量を選択することを特徴とする化
学蒸着法。 - 【請求項4】 請求項1の化学蒸着法において、前記選
択された温度が約100°Cから約500°Cであり、
また前記選択された圧力が約150ミリトルから約10
0トルであることを特徴とする化学蒸着法。 - 【請求項5】 請求項4の化学蒸着法において、前記選
択された温度が約400°Cであり、また前記選択され
た圧力が約400ミリトルであることを特徴とする化学
蒸着法。 - 【請求項6】 請求項1の化学蒸着法において、前記キ
ャリアガスが、少なくとも1つの貴ガスを含み、前記キ
ャリアガスの量が約50sccmから約2000scc
mであることを特徴とする化学蒸着法。 - 【請求項7】 請求項1の化学蒸着法において、前記気
体の量は、チタン有機金属前駆体のシランに対する体積
比が1:300から1:10になるように選択され、前
記キャリアガスは、約50sccmから約2000sc
cmの流量で供給され、 前記選択された温度が約100°Cから約500°Cで
あり、前記選択された圧力が約150ミリトルから約1
00トルであることを特徴とする化学蒸着法。 - 【請求項8】 請求項1の化学蒸着法において、前記反
応器の中の気体が反応し、前記ウエーハにTiSix及
びTiNの混合物から成る膜を蒸着させることを特徴と
する化学蒸着法。 - 【請求項9】 請求項1の化学蒸着法において、前記蒸
着されたTiSixの膜をアニールして前記ウエーハか
らケイ素を取り込み、これにより接触抵抗を低下させる
段階を更に備えることを特徴とする化学蒸着法。 - 【請求項10】 請求項9の化学蒸着法において、前記
アニールを、N2又はNH3を支配的に含む雰囲気中で実
行することを特徴とする化学蒸着法。 - 【請求項11】 請求項1の化学蒸着法において、前記
チタン有機金属前駆体がTi(NR2)4から本質的にな
り、Rが、Hと炭素含有基とから成る群から選択される
ことを特徴とする化学蒸着法。 - 【請求項12】 請求項11の化学蒸着法において、チ
タン有機金属前駆体のシランに対する体積比が1:30
0から1:10になるように、前記気体の量を選択する
ことを特徴とする化学蒸着法。 - 【請求項13】 請求項11の化学蒸着法において、前
記選択された温度が約400°Cであり、また前記選択
された圧力が約400ミリトルであることを特徴とする
化学蒸着法。 - 【請求項14】 請求項11の化学蒸着法において、チ
タン有機金属前駆体のシランに対する体積比が1:30
0から1:10になるように、前記気体の量が選択さ
れ、前記選択された温度が約400°Cであり、また前
記選択された圧力が約400ミリトルであることを特徴
とする化学蒸着法。 - 【請求項15】 請求項11の化学蒸着法において、前
記キャリアガスが、少なくとも1つの貴ガスを含み、前
記キャリアガスの量が約50sccmから約2000s
ccmであることを特徴とする化学蒸着法。 - 【請求項16】 請求項11の化学蒸着法において、前
記チタン有機金属前駆体がTi(N(C2H5)2)4から
成ることを特徴とする化学蒸着法。 - 【請求項17】 請求項11の化学蒸着法において、前
記蒸着されたTiSixの膜をアニールして前記ウエー
ハからケイ素を取り込み、これにより接触抵抗を低下さ
せる段階を更に備えることを特徴とする化学蒸着法。 - 【請求項18】 請求項1の化学蒸着法において、前記
チタン有機金属前駆体がTi(N(CH3)2)4から成
ることを特徴とする化学蒸着法。 - 【請求項19】 請求項18の化学蒸着法において、チ
タン有機金属前駆体のシランに対する容積比が1:30
0から1:10になるように、前記気体の量を選択する
ことを特徴とする化学蒸着法。 - 【請求項20】 請求項18の化学蒸着法において、前
記選択された温度が約400°Cであり、また前記選択
された圧力が約400ミリトルであることを特徴とする
化学蒸着法。 - 【請求項21】 請求項18の化学蒸着法において、チ
タン有機金属前駆体のシランに対する体積比が1:30
0から1:10になるように、前記気体の量が選択さ
れ、前記選択された温度が約400°Cであり、また前
記選択された圧力が約400ミリトルであることを特徴
とする化学蒸着法。 - 【請求項22】 請求項18の化学蒸着法において、前
記キャリアガスが、少なくとも1つの貴ガスを含み、前
記キャリアガスの量が約50sccmから約2000s
ccmであることを特徴とする化学蒸着法。 - 【請求項23】 請求項18の化学蒸着法において、前
記蒸着されたTiSixの膜をアニールして前記ウエー
ハからケイ素を取り込み、これにより接触抵抗を低下さ
せる段階を更に備えることを特徴とする化学蒸着法。 - 【請求項24】 化学蒸着反応器の中で半導体ウエーハ
の上に合致するTiSix相を形成するための化学蒸着
法において、 ウエーハを反応器の中に設ける段階と、 選択した量のガス状のTi(NR2)4前駆体、ガス状の
シラン及びキャリアガスを前記反応器の中に注入し、前
記RをHと炭素含有基とから成る群から選択し、Ti
(NR2)4のシランに対する体積比が1:300から
1:10となる量のTi(NR2)4前駆体及びシランを
供給し、前記キャリアガスの量を約50sccmから約
2000sccmとし、前記キャリアガスを少なくとも
1つの貴ガスを含む段階と、 前記前駆体及びシランを反応させ、TiSix及びTi
Nの混合物から成る膜を前記ウエーハに蒸着させるに効
果的な選択された圧力及び選択された温度に前記反応器
を維持し、前記記選択された温度を約100°Cから約
500°Cとし、また前記選択された圧力を約150ミ
リトルから約100トルとする段階とを備える化学蒸着
法。 - 【請求項25】 請求項24の化学蒸着法において、T
i(NR2)4前駆体のシランに対する体積比が1:80
になるように前記気体の量を選択し、前記キャリアガス
の量が約50sccmから約2000sccmとするこ
とを特徴とする化学蒸着法。 - 【請求項26】 請求項24の化学蒸着法において、前
記蒸着されたTiSixの膜をアニールして前記ウエー
ハからケイ素を取り込み、これにより接触抵抗を低下さ
せる段階を更に備えることを特徴とする化学蒸着法。 - 【請求項27】 請求項24の化学蒸着法において、前
記Ti(NR2)4前駆体がTi(N(CH3)2)4から
本質的に成ることを特徴とする化学蒸着法。 - 【請求項28】 請求項27の化学蒸着法において、T
i(NR2)4前駆体のシランに対する体積比が1:80
になるように前記気体の量を選択し、前記キャリアガス
の量が約50sccmから約2000sccmとするこ
とを特徴とする化学蒸着法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/789,585 US5278100A (en) | 1991-11-08 | 1991-11-08 | Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers |
US789585 | 1991-11-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH05226269A true JPH05226269A (ja) | 1993-09-03 |
JPH0773102B2 JPH0773102B2 (ja) | 1995-08-02 |
Family
ID=25148080
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4298848A Expired - Fee Related JPH0773102B2 (ja) | 1991-11-08 | 1992-11-09 | 半導体ウエーハにチタンケイ化物を蒸着させるための化学蒸着技術 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5278100A (ja) |
JP (1) | JPH0773102B2 (ja) |
DE (1) | DE4237587C2 (ja) |
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JPH0364473A (ja) * | 1989-04-25 | 1991-03-19 | Varian Assoc Inc | コールドウォールcvd反応器における窒化チタンの蒸着 |
EP0450106A1 (de) * | 1990-03-30 | 1991-10-09 | Siemens Aktiengesellschaft | Verfahren und Vorrichtung zur Herstellung einer Titannitrid-Schicht für höchstintegrierte Schaltungen mittels chemischer Dampfphasenabscheidung |
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JPH0773102B2 (ja) | 1995-08-02 |
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DE4237587A1 (ja) | 1993-05-13 |
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